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  You can filter table by choosing multiple options from dropdownShowing 13 results of 13
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BCW31 Diodes Incorporated Bristol Electronics 3,000 - -
BCW31 Fairchild Semiconductor Corporation Rochester Electronics 15,686 $0.04 $0.03
BCW31 Philips Semiconductors America II Electronics 5,730 - -
BCW31 NEC Electronics Group Bristol Electronics 29,964 $0.10 $0.02
BCW31 Nexperia RS Components 150 £0.03 £0.01
BCW31 NXP Semiconductors ComS.I.T. 27,000 - -
BCW31,215 Nexperia Future Electronics - $0.07 $0.05
BCW31,215 Nexperia element14 Asia-Pacific - $0.20 $0.04
BCW31,215 NXP Semiconductors Bristol Electronics 8,900 - -
BCW31,215 Nexperia Future Electronics - $0.04 $0.04
BCW31,215 Nexperia Avnet - $0.03 $0.03
BCW31,215 Nexperia Farnell element14 - £0.15 £0.06
BCW31TA Zetex / Diodes Inc Bristol Electronics 33,000 - -

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BCW31 datasheet (74)

Part Manufacturer Description Type PDF
BCW31 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BCW31 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
BCW31 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
BCW31 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
BCW31 Kexin NPN General Purpose Transistors Original PDF
BCW31 Korea Electronics General Purpose Transistor Original PDF
BCW31 Philips Semiconductors NPN General Purpose Transistor Original PDF
BCW31 Philips Semiconductors NPN general purpose transistors Original PDF
BCW31 Philips Semiconductors Small-signal Transistors Original PDF
BCW31 Philips Semiconductors NPN general purpose transistors Original PDF
BCW31 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW31 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW31 ROHM TRANS GP BJT NPN 32V 0.1A 3SMT Original PDF
BCW31 TY Semiconductor NPN General Purpose Transistors - SOT-23 Original PDF
BCW31 Allegro MicroSystems TRANS GP BJT NPN 20V 3TO-236AA Scan PDF
BCW31 Continental Device India Silicon Planar Epitaxial Transistor Scan PDF
BCW31 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW31 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
BCW31 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW31 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF

BCW31 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BCW32R

Abstract: BCW33 BCW31R-D4 IEC134 BCW32 BCW31R BCW31 BCW33R BCW32R-D5 N4100
Text: ° max BCW31 = D1 BCW32 = D2 BCW33 = D3 BCW31R = D4 BCW32R = D5 BCW33R = D6 R-types are available on , Hz BCW31 BCW32 BCW33 hFE " > < 110 220 200 450 420 800 VCBO VCEO 'CM max. max. max. 32 32 200 , Its Respective Manufacturer -LJ_ BCW31 N AHER PHILIPS/DISCRETE Db ED_m b b S 3 «=] 31 0 01S , = 200 Hz □ bE D BCW31 ;R BCW32;R BCW33;R h BCW31 BCW32 BCW33 hFE typ. 90 150 270 hFE , Manufacturer I This Material Copyrighted By Its Respective Manufacturer . BCW31 _,. BCW32 N AMER


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PDF BCW31 BCW32 BCW33 G015b37 BCW31 BCW32 BCW32R BCW33 BCW31R-D4 IEC134 BCW31R BCW33R BCW32R-D5 N4100
2009 - BCW32

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BCW31 ; BCW32; BCW33 NPN general purpose transistors Product , BCW31 ; BCW32; BCW33 NPN general purpose transistors PINNING FEATURES • Low current (100 mA , NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top view , .1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCW31 PACKAGE NAME â , transistors BCW31 ; BCW32; BCW33 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS


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PDF BCW31; BCW32; BCW33 BCW29 BCW30. BCW31 BCW32 BCW32
d2p marking code philips

Abstract: marking d3p D3P SOT23 D2p marking 4-20 mA 1997 marking D2p
Text: current (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 PINNING PIN 1 2 base em itter collector , TYPE NUMBER BCW31 BCW 32 BCW 33 MARKING CODE D ip D2p D3p H 1 Ei Top View MAM255 Fig. 1 , DC current gain BCW31 BCW 32 BCW 33 T"amb - 2 5 CONDITIONS open em itter open base °C - MIN , accordance with the Absolute M aximum Rating System (IEC 134). BCW31 ; BCW32; BCW33 SYMBOL V CBO , 25 °C unless otherwise specified. BCW31 ; BCW32; BCW33 SYMBOL ICBO PARAMETER collector


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PDF BCW31 BCW32; BCW33 BCW31 MAM255 d2p marking code philips marking d3p D3P SOT23 D2p marking 4-20 mA 1997 marking D2p
BCW32

Abstract: BCW33 33T4 BCW31
Text:  BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 , Noise figure at Rs = 2 kQ IC = 200 |iA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 , Respective Manufacturer BCW31 BCW32 BCW33 RATINGS (at Ta = 25°C unless otherwise specified) Limiting , VBEsat typ. 850 mV D.C. current gain BCW31 BCW32 BCW33 lC = 10 |xA, Vce = 5 V hFE typ. 90 150 270


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 33T4
1997 - BCW33

Abstract: BCW32 BCW32R BCW33R BCW31R BCW31 BCW30 BCW32R-D5 PARTMARKING MV DSA003672
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 D1 BCW32 D2 BCW33 D3 BCW31 BCW32 BCW33 BCW31R D4 BCW32R D5 BCW33R D6 E C BCW31 - BCW29 BCW32 - BCW30 BCW33 - N/A B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter , Saturation Voltage VBE(SAT) 750 850 Collector- Base Cut-Off Current ICBO BCW31 BCW32 hFE


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PDF BCW31 BCW32 BCW33 BCW31R BCW32R BCW33R BCW31 BCW33 BCW32 BCW32R BCW33R BCW31R BCW30 BCW32R-D5 PARTMARKING MV DSA003672
Not Available

Abstract: No abstract text available
Text: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin , |lA; VCE = 5 V; f = 1 kHz; B = 200 Hz hpE VCBO VCEO ICM BCW31 BCW32 BCW33 110 200 420 , °C fl typ. 300 M Hz F < 10 dB Ptot 39 L BCW31 BCW32 BCW33 , 210 mV 850 mV BCW31 BCW32 BCW33 hFE hpE typ. > < Collector capacitance at f = 1 MHz


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PDF BCW31 BCW32 BCW33 BCW31 BCW32
2001 - BCW32

Abstract: BCW31 BCW33
Text: -23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 , Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting , V IC = 2 mA; VCE = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance


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PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33
bcw33

Abstract: No abstract text available
Text: n i BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 , . max. max. max. typ. BCW31 BCW32 BCW33 200 420 110 800 450 220 V 32 32 V mA 200 250 150 300 mW °c MHz hFE VCBO VcEO ·c m P lot T) fT F < 10 dB 39 BCW31 BCW32 BCW33 RA TIN G S (at , BCW31 BCW 32 BCW33 i c = io nA, Vc e = 5 v I c = 2 mA; Vce = 5 V Collector capacitance at f = 1 MHz


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 200jiA; bcw33
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32 , and BCW30. 3 1 MARKING TYPE NUMBER MARKING CODE<1> BCW31 BCW32 D2* BCW33 2 , Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 , = 0; V qb = 32 V BCW31 BCW32 150 BCW33 270 DC current gain lc = 2 mA; VCE = 5 V BCW31 110 BCW32 200 450 BCW33 420 800 - 220 collector-emitter saturation


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PDF BCW31 BCW32; BCW33 BCW29 BCW30. BCW32 MAM255
2006 - Not Available

Abstract: No abstract text available
Text: BCW31 . BCW33 BCW31 . BCW33 NPN Surface Mount General Purpose Si-Epi-Planar Transistors , VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25°C) BCW31 BCW32 32 V 32 V 5V 250 mW 1) 100 mA 200 mA , Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 hFE hFE hFE hFE hFE hFE VCEsat VCEsat ­ , % http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW31 . BCW33 Characteristics (Tj = 25 , Empfohlene komplementäre PNP-Transistoren Marking - Stempelung F RthA ­ ­ < 420 K/W 1) BCW29, BCW30 BCW31 =


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PDF BCW31 BCW33 BCW33 OT-23 O-236) UL94V-0 BCW29, BCW30
BCW33

Abstract: BCW29 BCW30 BCW31 BCW32
Text: BCW31 . BCW33 BCW31 . BCW33 Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW31 BCW32 Collector-Emitter-volt. ­ , µA BCW31 BCW32 BCW33 hFE hFE hFE ­ ­ ­ 90 150 270 ­ ­ ­ VCE = 5 V, IC = 2 mA BCW31 BCW32 BCW33 hFE hFE hFE 110 200 420 ­ ­ ­ 220 450 800 ­ ­ , , Schaltverhältnis 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BCW31 . BCW33


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PDF BCW31 BCW33 OT-23 O-236) UL94V-0 BCW32 BCW29, BCW33 BCW29 BCW30 BCW31 BCW32
BCW32R

Abstract: BCW31 BCW31R ferranti BFQ31A BFQ31 BCW33 BCW33R BCW32 BCV72
Text: BCW32 . BCW33 . BCW31R . BCW32R . BCW33R . D1 D2 D3 D4 D5 D6 BCW31 /32/33, Page 3 SOT-23 TRANSISTORS & ,  BCW31 BCW32 BCW33 NPN Silicon Planar Small Signal Transistors DESCRIPTION These devices are , environments. ABSOLUTE MAXIMUM RATINGS Parameter Symbol BCW31 , 32 & 33 Unit Collector-Base Voltage VCBO 30 , semiconductors J® SOT-23 Actual size in inset BCW31 /32/33 CHARACTERISTICS (at T; = 25°C unless otherwise stated). Parameter Symbol BCW31 , 32 & 33 Unit Test Conditions Min. Typ. Max. Collector-base


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PDF BCW31 BCW32 BCW33 OT-23 BCW31, FMMT5087 BCW69 BCW70 BCX71G BCW32R BCW31R ferranti BFQ31A BFQ31 BCW33 BCW33R BCV72
Not Available

Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR , BCW31 D.C. current gain at T: = 25 °C lc = 2 mA; V C E = 5 V hF E > < Collector-base , OA - D.C. current gain BCW31 Iq = 10 pA, V c e = 5 V h FE lc = 2 m A ; V CE = 5 V h , BCW31 ;R BCW32;R BCW33;R < m 10 — dB N il i i i i r i i i i i j 2 0 0 T a m b (°C , 00 Fig. 3 Power derating curve. June 1987 279 i i_ _ _ _ BCW31


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PDF D015b31 BCW31 BCW33 BCW32 bhS3T31 0015b34
Not Available

Abstract: No abstract text available
Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 , Q0QQ752 39 10 J JT Ld JJ Ptot LkJ U! 8> ru BCW31 BCW32 BCW33 200 110 420 , ; f = 1 kHz; B = 200 Hz 1 > < max. max. max. ■dB CDIL BCW31 BCW32 BCW33 , mV BCW31 BCW32 BCW33 D.C. current gain i c = io nA, v Ce = 5 v IC = 2 mA; V CE = 5 V hpE


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PDF BCW31 BCW32 BCW33 BCW31 Q0QQ752 BCW32
2004 - marking code 10 sot23

Abstract: BCW29 BCW30 BCW31 BCW32 BCW33 bcw31 bcw32 bcw33
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW31 ; BCW32; BCW33 NPN general purpose transistors , specification NPN general purpose transistors BCW31 ; BCW32; BCW33 FEATURES PINNING · Low current , TYPE NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top , . Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCW31 PACKAGE , Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33


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PDF BCW31; BCW32; BCW33 BCW29 BCW30. BCW31 BCW32 marking code 10 sot23 BCW30 BCW31 BCW32 BCW33 bcw31 bcw32 bcw33
2002 - BCW31

Abstract: BCW32
Text: SEMICONDUCTOR BCW31 /32 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L 3 H G A 2 D Complementary to BCW29/30. 1 MAXIMUM RATING (Ta=25) UNIT VCBO 30 V Collector-Emitter Voltage , BCW31 BCW32 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN , pF - - 10 dB BCW31 DC Current Gain BCW32 Collector-Emitter Saturation Voltage


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PDF BCW31/32 BCW29/30. BCW31 BCW32 BCW31 BCW32
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCW31 ,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 , IC SMD Type Product specification BCW31 ,BCW32,BCW33 Electrical Characteristics Ta = 25 , cutoff current IC = 0; VEB = 5 V 100 nA hFE IC = 2 mA; VCE = 5 V BCW31 DC current gain , mV mV pF 100 MHz 10 dB hFE Classification TYPE BCW31 BCW32 BCW33


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PDF BCW31 BCW32 BCW33 OT-23 BCW31 BCW32
Not Available

Abstract: No abstract text available
Text: purpose transistors FEATURES · Low curren t (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 , ents: B C W 29 and BCW 30. 3 _ 3 MARKING TYPE NUMBER BCW31 BCW 32 BCW 33 MARKING CODE , j-a Note 1. T ra nsisto r m ounted on an FR4 printed-circuit. BCW31 ; BCW32; BCW33 PARAMETER , . 100 10 100 UNIT nA I^A nA Iebo hFE em itte r cut-off current DC cu rre n t gain BCW31 BCW 32 BCW 33 DC cu rre n t gain BCW31 BCW 32 BCW 33 lc = 0; V eb = 5 V lc = 10 jliA; V CE = 5 V -


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PDF BCW31 BCW32; BCW33 BCW31 MAM255 115002/00/03/pp8
smd transistor marking D3

Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
Text: Transistors IC SMD Type NPN General Purpose Transistors BCW31 ,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). , printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW31 ,BCW32,BCW33 Electrical , BCW31 DC current gain BCW32 110 200 450 420 BCW33 120 800 Base to emitter , Classification TYPE BCW32 BCW33 Marking 2 BCW31 D1 D2 D3 www.kexin.com.cn 550 250


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PDF BCW31 BCW32 BCW33 OT-23 BCW32 BCW31 smd transistor marking D3 BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 smd TRANSISTOR marking ku
2002 - Not Available

Abstract: No abstract text available
Text: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E Mark: D1 / D2 / D3 SOT-23 B NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. See BCW71 for characteristics. Absolute Maximum Ratings , Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max * BCW31 / 32 , . ã1997 Fairchild Semiconductor Corporation 3-236 BCW31 / BCW32 / BCW33 NPN General Purpose


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PDF BCW31 BCW32 BCW33 OT-23 BCW71
BCW31

Abstract: BCW32 BCW33 IEC134 7Z6a ScansUX40 J 449
Text: 711002b 0DbflS33 STÛ IPHIN J V BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N , = 5 V BCW31 BCW32 BCW33 hFE > < 110 220 200 450 420 800 Collector-base voltage (open emitter , 1.2P This Material Copyrighted By Philips Semiconductors. BCW31 ■711GÖEL» OQbfl53i4 M3M «PHIN , at Rg = 2 ki2 lc = 200 (iA; VQE = 5V f = 1 kHz; B = 200 Hz hFE fT A BCW31 BCW32 BCW33 BCW31 BCW32 , Philips Semiconductors. BCW31 — 711002b DQtô53b 20? "PHIN BCW32 BCW33 600 400 200 10"2 IO"1 1 10 Ic(mA


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PDF 711002b 0DbflS33 BCW31 BCW32 BCW33 BCW33 IEC134 7Z6a ScansUX40 J 449
BCW32

Abstract: bcw31 bcw32 bcw33 marking code 533-1 BCW31 BCW33 IEC134 lg tv system ic 5452N
Text: m bbSBTBl DOSHSb? =114 «APX N AUER PHILIPS/DISCRETE b?E ]> y V. BCW31 BCW32 BCW33 SILICON , juA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 200 420 hFE < 220 450 800 vCBO , Copyrighted By Its Respective Manufacturer BCW31 BCW32 BCW33 ■005L»5bfl flSO ■APX N AMER PHILIPS , PHILIPS/DISCRETE b7E D J V BCW31 BCW32 BCW33 D.C. current gain BCW31 BCW32 BCW33 lc=10M, Vce = 5V hFE , 1991 451 This Material Copyrighted By Its Respective Manufacturer BCW31 m ^53^31 00E4570 MOT «APX


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 7Z68043 bcw31 bcw32 bcw33 marking code 533-1 IEC134 lg tv system ic 5452N
Not Available

Abstract: No abstract text available
Text: ■BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D , N C E D A T A BCW31 D.C. current gain at Tj = 25 °C I q = 2 mA; V q e = 5 V h FE , . TOP VIEW April 1991 449 BCW31 BCW32 BCW33 btiS3T31 00545ba flSQ « A P X N AMER PHILIPS , planar epitaxial transistors N AMER PHILIPS/DISCRETE JV b7E D D.C. current gain BCW31 I , BCW31 BCW32 BCW33 BCW 33 90 150 270 110 220 200 450 4 20 800 Collector


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PDF BCW31 BCW32 BCW33 bhS3T31 0Q245b7
2001 - BCW31

Abstract: BCW32 BCW33
Text: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 , EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain , BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector­base , = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance at f = 1 MHz IE =


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PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33
1995 - Not Available

Abstract: No abstract text available
Text: BCW31 /32 SMALL SIGNAL NPN TRANSISTORS Type BCW 31 BCW 32 s Marking D1 D2 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW , Temperature o Value 32 32 5 0.1 0.2 300 -65 to 150 150 Unit V V V A A mW o o C C 1/4 BCW31 , cycle 2 % 2/4 BCW31 /BCW32 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 , 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCW31 /BCW32 Information


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PDF BCW31/32 OT-23 BCW31/BCW32
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