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BCW-30 Philips Semiconductors Chip One Exchange 883 - -
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BCW30 Nexperia element14 Asia-Pacific 256 $0.20 $0.05
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BCW30 ON Semiconductor Chip1Stop 2,515 $0.09 $0.08
BCW30 NXP Semiconductors Bristol Electronics 6,000 - -
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BCW30 Philips Semiconductors Chip One Exchange 400 - -
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BCW30 Fairchild Semiconductor Corporation Bristol Electronics 3,026 - -
BCW30 Fairchild Semiconductor Corporation Rochester Electronics 8,950 $0.04 $0.03
BCW30 Philips Semiconductors America II Electronics 55,900 - -
BCW30 NXP Semiconductors ComS.I.T. 93,000 - -
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BCW30,215 Nexperia Avnet 57,000 €0.03 €0.02
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BCW30LT1 Motorola Semiconductor Products Bristol Electronics 3,000 $0.11 $0.02
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BCW30LT1G ON Semiconductor Future Electronics - $0.03 $0.02
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BCW30LT1G ON Semiconductor America II Electronics 4,206 - -
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BCW30LT1G ON Semiconductor Chip1Stop 24,000 $0.05 $0.03
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BCW30LT1G ON Semiconductor Newark element14 1,137 $0.18 $0.04
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BCW30LT1G ON Semiconductor Schukat electronic 4,500 €0.02 €0.02
BCW30NMT Philips Semiconductors Bristol Electronics 930 $0.10 $0.05
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BCW30 datasheet (92)

Part Manufacturer Description Type PDF
BCW30 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BCW30 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
BCW30 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
BCW30 Galaxy Semi-Conductor Holdings PNP General Purpose Amplifier Original PDF
BCW30 Kexin PNP General Purpose Transistors Original PDF
BCW30 Korea Electronics General Purpose Transistor Original PDF
BCW30 Philips Semiconductors PNP general purpose transistors Original PDF
BCW30 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW30 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW30 ROHM TRANS GP BJT PNP 32V 0.1A 3SMT Original PDF
BCW30 STMicroelectronics SMALL SIGNAL PNP TRANSISTORS Original PDF
BCW30 STMicroelectronics SMALL SIGNAL PNP TRANSISTOR Original PDF
BCW30 TY Semiconductor PNP General Purpose Transistors - SOT-23 Original PDF
BCW30 Allegro MicroSystems TRANS GP BJT PNP 20V 3TO-236AA Scan PDF
BCW30 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW30 Continental Device India Silicon Planar Epitaxial Transistor Scan PDF
BCW30 Fairchild Semiconductor PNP General Purpose Amplifier Scan PDF
BCW30 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW30 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BCW30 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF

BCW30 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: -23. 120 260 215 500 10 dB Marking code BCW29 = C1 BCW30 = C2 3 1 BCW29R = C4 BCW30R , N AMER P H I L I P S / D I S CR E T E bb53T31 D01SbS3 DbE D BCW29 BCW30 SILICON PLANAR , D.C. current gain at Tj = 25 °C - l c = 2 mA; - V c e = 5 V BCW30 hF E Collector-base , 1987 269 N AMER P H I L I P S / D I S CR E T E DbE D bbSBTBl 001SL24 3 BCW29 BCW30 V , ObE D ■bbSBTBl D0]iSb2S 5 ■BCW29 BCW30 Silicon planar epitaxial transistors


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PDF bb53T31 D01SbS3 BCW29 BCW30 001SLE7
2006 - bcw30

Abstract: BCW29
Text: BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors , 200 mA 200 mA -55.+150°C -55.+150°C BCW30 Characteristics (Tj = 25°C) Min. DC current gain ­ Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA BCW29 BCW30 BCW29 BCW30 hFE hFE hFE hFE - , / © Diotec Semiconductor AG 1 BCW29, BCW30 Characteristics (Tj = 25°C) Min. Base-Emitter saturation , komplementäre NPN-Transistoren Marking - Stempelung F RthA ­ ­ < 420 K/W 1) BCW31 . BCW33 BCW29 = C1 BCW30 =


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PDF BCW29, BCW30 BCW30 OT-23 O-236) UL94V-0 BCW31 BCW33 BCW29 BCW29
BCW29

Abstract: BCW30 BCW31 BCW33
Text: BCW29, BCW30 BCW29, BCW30 Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW29 BCW30 Collector-Emitter-volt. ­ , BCW29 BCW30 hFE hFE ­ ­ 90 150 ­ ­ - VCE = 5 V, - IC = 2 mA BCW29 BCW30 hFE , http://www.diotec.com/ 1 BCW29, BCW30 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min , NPN-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) BCW31 . BCW33 BCW29 = C1 BCW30 =


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PDF BCW29, BCW30 OT-23 O-236) UL94V-0 BCW29 BCW31 BCW29 BCW30 BCW31 BCW33
BCW30

Abstract: pnp general purpose amplifier pnp bcw30 Amplifier "marking code" D
Text: BCW30 Pb Ideally suited for automatic insertion. Lead-free Epitaxial planar die construction , -23 ORDERING INFORMATION Type No. BCW30 Marking Package Code C2X SOT-23 MAXIMUM RATING @ Ta , specification PNP General Purpose Amplifier BCW30 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise , Galaxy Electrical Production specification PNP General Purpose Amplifier BCW30 PACKAGE , Shipping BCW30 SOT-23 3000/Tape&Reel Document number: BL/SSSTC103 Rev.A www.galaxycn.com 3


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PDF BCW30 OT-23 BL/SSSTC103 BCW30 pnp general purpose amplifier pnp bcw30 Amplifier "marking code" D
BCW29

Abstract: SOT23 MARKING CODE 720 BCW30 BCW31 BCW32 sot23 marking JR
Text: Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 , Kong. * = t : Made in Malaysia. TYPE NUMBER MARKING CODE*1) BCW29 C1* BCW30 C2* Top view Fig. 1 , Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 THERMAL , lc = 0; VEB = -5 V - - -100 nA hfe DC current gain BCW29 BCW30 lc = -10 |LIA; Vce = -5V - 90 150 - DC current gain BCW29 BCW30 lc = -2 mA; VCE = -5 V 120 215 - 260 500 VcEsat collector-emitter


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 SOT23 MARKING CODE 720 BCW32 sot23 marking JR
transistor 720 smd

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCW29, BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 1.3-0.1 , Product specification BCW29, BCW30 Electrical Characteristics Ta = 25 Parameter Symbol , BCW30 260 500 VCE(sat) Base to emitter saturation voltage VBE(sat) IC = -10 mA; IB = , 100 MHz 10 dB hFE Classification TYPE BCW29 BCW30 Marking C1 C2 http


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PDF BCW29 BCW30 OT-23 BCW29 transistor 720 smd
BCW29

Abstract: BCW30 IEC134 "transistors "
Text: N AMER PHILIPS/DISCRETE DbE D ^53^31 0Q15bE3 1 BCW29 BCW30 T-M-il SILICON PLANAR EPITAXIAL , applications in thick and thin-film circuits. QUICK REFERENCE DATA BCW29 BCW30 D.C. current gain at Tj = , BCW29 BCW30 ratings Limiting values in accordance with the Absolute Maximum System (IEC134 , 200 Hz BCW29 hFE hFE fT typ. 90 150 > 120 215 < 260 500 BCW30 typ. typ. 4,5 150 40 -V (V , Its Respective Manufacturer BCW29 BCW30 I This Material Copyrighted By Its Respective


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PDF 0Q15bE3 BCW29 BCW30 BCW30 IEC134 "transistors "
BCW30

Abstract: BCW29 ic marking ETH ScansUX40 IEC134
Text: 711002b OObûSE? ETH HPHIN BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a , circuits. QUICK REFERENCE DATA D.C. current gain at Tj = 25 °C -lc = 2mA;-VCE = 5 V *FE BCW29 BCW30 > 120 , Version 1.2P This Material Copyrighted By Philips Semiconductors. 711002b 00bÖ52fl 130 BCW29 BCW30 IPHIN , Hz hFE hFE J V typ. typ. < BCW29 BCW30 BCW29 typ. 90 150 > 120 215 < 260 500 BCW30 4.5 150 10 pF MHz , Semiconductors. ■711Gß2b 00bflS30 fl=H BIPHIN BCW29 BCW30 300 FE 200 100 10" 2 400 "VcEsot (mV) 300 200 100


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PDF 711002b BCW29 BCW30 BCW30 200MA 00bfl53S ic marking ETH ScansUX40 IEC134
2009 - BCW29

Abstract: BCW30 BCW31 BCW32
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product , PNP general purpose transistors BCW29; BCW30 FEATURES PINNING · Low current (max. 100 mA , (1) TYPE NUMBER BCW29 BCW30 2 1 C1* C2* 2 Top view MAM256 Note 1. * = p , plastic surface mounted package; 3 leads SOT23 BCW30 LIMITING VALUES In accordance with the , NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 THERMAL


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 MAM256 R75/05/pp6 BCW29 BCW30 BCW32
sot23 1fe

Abstract: BCW29
Text: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icrominiature , . max. > 120 260 32 32 200 250 150 100 BCW30 215 500 V V mA mW °C MHz 1FE ~ v CBO - v CEO - ' cm Ptot T) fT F < 10 dB Marking code BCW29 = C1p BCW30 = C2p Dimensions in mm 3.0 2.8 PE , available on request. TOP VIEW September 1994 263 BCW29 BCW30 RATINGS Lim iting values in , x 10 mm x 0.7 mm. 264 September 1994 Silico n planar epitaxial transistors BCW29 BCW30


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PDF BCW29 BCW30 OT-23. BCW30 sot23 1fe
d0245

Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
Text: ■I bb53S31 DQ545bl 4Tb HAPX N AUER PHILIPS/DISCRETE b?E ]> BCW29 BCW30 SILICON PLANAR , Ni 30° max nFE -VcBO max -VcEO max -'cm ptot BCW29 BCW30 > 120 215 < 260 500 'J fT max , BCW29 BCW30 , N AMER PHILIPS/DISCRETE b7E D- RATINGS Limiting values in accordance with the Absolute , planar epitaxial transistors N AP1ER PHILIPS/DISCRETE b7E T> D.C. current gain BCW29 BCW30 BCW29 BCW30 -ic= 10M;-VCE = 5V hFE typ. 90 150 -lC= 2mA;-VCE = 5V > 120 215 < 260 500


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PDF bb53S31 DQ545bl BCW29 BCW30 200juA OT-23. bbS3131 BCW30 7Z68043 d0245 BCW29 IEC134 332 z marking, sot-23
Not Available

Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm BCW30 SOT-23 Mark: C2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents , Characteristics S ym bol TA = 25° C unless otherwise noted C h aracteristic M ax Units * BCW30 Pd , Semiconductor Corporation W30, Rev B BCW30 Discrete POWER & Signal Technologies FAIRCHI I D â , BCW30 PNP General Purpose Amplifier


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PDF BCW30 OT-23 BC857A
1999 - BCW29

Abstract: BCW30 BCW31 BCW32 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general , Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 FEATURES PINNING , MARKING 2 MARKING CODE(1) TYPE NUMBER BCW29 C1 BCW30 1 2 C2 Top view MAM256 , general purpose transistors BCW29; BCW30 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER , current gain IC = -10 µA; VCE = -5 V BCW29 - 90 - BCW30 - 150 - 120 -


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PDF M3D088 BCW29; BCW30 BCW31 BCW32. BCW29 MAM256 BCW29 BCW30 BCW32 BP317
1997 - BCW29R

Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV 720 sot23 BCW32 BCW31 DSA003672
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base , BCW29 hFE BCW30 hFE Transition Frequency fT Collector Capacitance CTC Noise


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PDF BCW29 BCW30 BCW29 BCW30 BCW29R BCW30R BCW31 BCW32 MV SOT23 PARTMARKING MV 720 sot23 BCW32 BCW31 DSA003672
Not Available

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER , –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz Continental Device India Limited BCW30 hFE , 500 Page 1 of 3 BCW29 BCW30 RATINGS (at T A = 25°C unless otherwise specified) Limiting


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PDF BCW29 BCW30 C-120
BCW29R

Abstract: BCW30
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 - JULY 1995_ PARTMARKING DETAILS BCW29 BCW30 BCW29R BCW30R C1 C2 C4 C5 BCW29 BCW30 COMPLEMENTARY TYPES - BCW29 BCW30 - BCW31 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage Peak Pulse Current Continuous C ollector Current Power D issipation at Tamb , -720 -810 250 VßEISAT) 'CBO -100 -10 90 120 150 215 150 7 10 500 260 nA (lA BCW29 BCW30


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PDF BCW29 BCW30 BCW29R BCW30R BCW30 BCW31 BCW32
BCW29

Abstract: BCW30
Text: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW29 = Cl BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _3.0_ 2.8 0.48 ! 3 0.38 _1.02_ 0.89 _2.00_ 1.80 0.14 0.09 ABSOLUTE MAXIMUM RATINGS BCW29 BCW30 D.C. current gain at Tj = 25 °C -ic = 2 mA; -Vce = 5 V Collector-base , V mA mW °C MHz dB 37 BCW29 BCW30 RATINGS (at Ta = 25°C unless otherwise specified) Limiting


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PDF BCW29 BCW30 BCW29 BCW30
1997 - BC857A

Abstract: BCW30
Text: BCW30 C E B SOT-23 Mark: C2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced , , Junction to Ambient Max Units * BCW30 350 2.8 357 mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. © 1997 Fairchild Semiconductor Corporation W30, Rev B BCW30 , , BW = 200 Hz BCW30 PNP General Purpose Amplifier Fairchild Semiconductor


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PDF BCW30 OT-23 BC857A BCW30
Not Available

Abstract: No abstract text available
Text: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arkin g BCW29 = C l BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 2.8 0.14 0.48 0.38 1 3 1 I Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1 2.4 1 1 _1 . 02 _ , Ti > < BCW30 120 260 215 500 32 32 V V mA max. max. max. max, max , BCW29 BCW30 R A T IN G S (at T a = 25°C unless otherwise specified) Limiting values


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PDF BCW29 BCW30 S3fl33
Not Available

Abstract: No abstract text available
Text: r z 7 SGS-THOM SON Ä T # MOeMUmOTBSfflOffiS BCW29 BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW29 BCW30 M arking C1 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR , tì 2 3 7 nnTfiaGH Û3Ô BCW29/ BCW30 THERMAL DATA Rthj-amb · Thermal Resistance , -0.18 -0.72 -0.81 -0.6 -0.75 V V V V V lc = -2 mA for BCW29 lc = -10 nA l c = -2 mA for BCW30 lc = , - ^ SCS-THOilSOM I 7 * ^ 2 3 7 007Ö005 77H BCW29/ BCW30 SOT-23 MECHANICAL DATA mm


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PDF BCW29 BCW30 BCW30 OT-23 BCW29/BCW30 OT-23
2004 - BCW29

Abstract: BCW30 BCW31 BCW32
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product , PNP general purpose transistors BCW29; BCW30 FEATURES PINNING · Low current (max. 100 mA , (1) TYPE NUMBER BCW29 BCW30 2 1 C1* C2* 2 Top view MAM256 Note 1. * = p , plastic surface mounted package; 3 leads SOT23 BCW30 LIMITING VALUES In accordance with the , Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 MAM256 SCA76 BCW29 BCW30 BCW32
Not Available

Abstract: No abstract text available
Text: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW29 = Cl BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 3 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 _ 0.89 0.60 0.40 2.00 1.80 , cbo -VcEO -ICM Ptot Tj fT > < maxmaxmax. max, max. typ. 120 260 BCW30 215 500 V 32 V 32 mA 200 mW 250 150 °C 150 MHz F 10 dB 37 BCW29 BCW30 RATINGS (at Ta = 25°C unless


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PDF BCW29 BCW30 BCW29
Not Available

Abstract: No abstract text available
Text: nit Vdc Vdc Vdc mAdc 96D 6 1 9 4 5 0 T 'Zl'P *? BCW29 BCW30 CASE 318-02/03, STYLE 6 SOT , % alumina. GENERAL PURPOSE TRANSISTOR PNP SILICON DEVICE MARKING BCW29 = C l; BCW30 = C2 Refer to , CHARACTERISTICS Output Capacitance (Ie = o, Vc e " io vdc, f = hpE BCW29 BCW30 VcE(sat) VBE(on) 120 215 - 0.6 260


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PDF BCW29 BCW30 OT-23 O-236AA/AB) BCW30
1997 - transistors marking HJ

Abstract: marking c2 BCW30
Text: BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW 30 s s s Marking C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW , October 1997 -65 to 150 o C 150 o C 1/4 BCW30 THERMAL DATA R t hj- amb · , Transition F requency VCB = -10 V -0.75 f = 1KHz 500 150 MHz 7 dB 10 dB BCW30 , 0044616/B 3/4 BCW30 Information furnished is believed to be accurate and reliable. However


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PDF BCW30 OT-23 transistors marking HJ marking c2 BCW30
smd TRANSISTOR BCW29

Abstract: MARKING SMD PNP TRANSISTOR BCW29 BCW30 smd transistor marking C2 720 TRANSISTOR smd sot
Text: Transistors IC SMD Type PNP General Purpose Transistors BCW29, BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 , printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW29, BCW30 Electrical , IC = -2 mA; VCE = -5 V 260 215 BCW30 120 500 VCE(sat) Base to emitter saturation , Classification TYPE BCW29 BCW30 Marking 2 -810 C1 C2 www.kexin.com.cn -600 mV


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PDF BCW29 BCW30 OT-23 BCW29 smd TRANSISTOR BCW29 MARKING SMD PNP TRANSISTOR BCW30 smd transistor marking C2 720 TRANSISTOR smd sot
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