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2006 - bcw30

Abstract: BCW29
Text: Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 100°C, (E open) Emitter-Base cutoff current - VEB = 5 V


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PDF BCW29, BCW30 BCW30 OT-23 O-236) UL94V-0 BCW31 BCW33 BCW29 BCW29
BCW29

Abstract: BCW30 BCW31 BCW33
Text: 30 V, (E open) - VCE = 30 V, Tj = 100°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open


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PDF BCW29, BCW30 OT-23 O-236) UL94V-0 BCW29 BCW31 BCW29 BCW30 BCW31 BCW33
BCW30

Abstract: BCW29 ic marking ETH ScansUX40 IEC134
Text: typical values w _ cw 3CW 30 li Ct p , 10 20 -VCB Fig. 9 (V) 30 50 100 Tj (°C) 150 Fig. 10 448 April 1991 Printed From CAPS XPert Version


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PDF 711002b BCW29 BCW30 BCW30 200MA 00bfl53S ic marking ETH ScansUX40 IEC134
BCW29

Abstract: BCW30 IEC134 "transistors "
Text: 10 20 -Vcb(V) 30 Fig. 11. BCW29 BCW30 50 100 Tj ( °C) 150 Fig. 12. August 1980 275 j This


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PDF 0Q15bE3 BCW29 BCW30 BCW30 IEC134 "transistors "
sot23 1fe

Abstract: BCW29
Text: Ptot T) fT F < 10 dB Marking code BCW29 = C1p BCW30 = C2p Dimensions in mm 3.0 2.8 PE


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PDF BCW29 BCW30 OT-23. BCW30 sot23 1fe
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF bb53T31 D01SbS3 BCW29 BCW30 001SLE7
BCW29

Abstract: BCW30
Text: SEMICONDUCTOR BCW29/ 30 TECHNICAL DATA epitaxial planar pnp transistor GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW31/32 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO - 30 V Collector-Emitter Voltage VcEO -20 V , B E BCW29 Type Name R Lot No. C2 r "H E BCW30 1999. 12. 29 Revision No : 1 1/2 BCW29/ 30 , Collector-Base Breakdown Voltage V(BR)CBO Ic=-10j/A - 30 - - V Collector-Emitter Breakdown Voltage V(BR)CEO Ic


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PDF BCW29/30 BCW31/32 OT-23 -10j/A BCW29 BCW30 -10mA, BCW30
1997 - BCW29R

Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV 720 sot23 BCW32 BCW31 DSA003672
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO - 30 V Collector-Emitter Voltage VCEO - 30 V Emitter-Base Voltage VEBO -20 V Peak Pulse Current ICM -5 A Continuous Collector Current IC


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PDF BCW29 BCW30 BCW29 BCW30 BCW29R BCW30R BCW31 BCW32 MV SOT23 PARTMARKING MV 720 sot23 BCW32 BCW31 DSA003672
BCW29

Abstract: SOT23 MARKING CODE 720 BCW30 BCW31 BCW32 sot23 marking JR
Text: w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 SOT23 MARKING CODE 720 BCW32 sot23 marking JR
2009 - BCW29

Abstract: BCW30 BCW31 BCW32
Text: Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 MAM256 R75/05/pp6 BCW29 BCW30 BCW32
BCW29R

Abstract: BCW30
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 - JULY 1995_ PARTMARKING DETAILS BCW29 BCW30 BCW29R BCW30R C1 C2 C4 C5 BCW29 BCW30 COMPLEMENTARY TYPES - BCW29 BCW30 - BCW31 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage Peak Pulse Current Continuous C ollector Current Power D issipation at Tamb=25°C O perating and Storage Tem perature Range SYMBOL V CBO V CEO V EBO 'cm VALUE - 30 - 30 -20 -5 -100


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PDF BCW29 BCW30 BCW29R BCW30R BCW30 BCW31 BCW32
BCW29

Abstract: BCW30
Text: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW29 = Cl BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _ 3.0 _ 2.8 0.48 ! 3 0.38 _1.02_ 0.89 _2.00_ 1.80 0.14 0.09 ABSOLUTE MAXIMUM RATINGS BCW29 BCW30 D.C. current gain at Tj = 25 °C -ic = 2 mA; -Vce = 5 V Collector-base , . 120 260 30 150 215 500 4,5 150 10 ]?F 1MHz dB 38


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PDF BCW29 BCW30 BCW29 BCW30
1999 - BCW29

Abstract: BCW30 BCW31 BCW32 BP317
Text: 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45


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PDF M3D088 BCW29; BCW30 BCW31 BCW32. BCW29 MAM256 BCW29 BCW30 BCW32 BP317
2002 - BCW29

Abstract: BCW30
Text: SEMICONDUCTOR BCW29/ 30 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L DIM A B C D E G H J K L M N P H MAXIMUM RATING (Ta=25 3 G A 2 D Complementary to BCW31/32 1 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO - 30 V Collector-Emitter , . TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A - 30 - - V


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PDF BCW29/30 BCW31/32 BCW29 BCW30 -10mA, BCW29 BCW30
Not Available

Abstract: No abstract text available
Text: 5 V f = 1 KH z; B = 200 H z ■S3fl33*m 00 00 7 5 1 38 BCW typ. > < 29 90 30


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PDF BCW29 BCW30 S3fl33
BCW29R

Abstract: BCW30R SOT213 BCV72 ferranti BFQ31A BFQ31 BCW30 BCW29 SOT MARKING 213
Text: environments. ABSOLUTE MAXIMUM RATINGS Parameter Symbol BCW29 & BCW30 Unit Collector-Base Voltage VCBO - 30 Volts Collector-Emitter Voltage Vces - 30 Volts Collector-Emitter Voltage (-lc = 2 mA) Vceo -20 Volts , measuring 10 x 8 x 0.6 mm. 4 FERRANTI semiconductors BCW29/ 30 CHARACTERISTICS (at Tj = 25°C unless , -50 -25 0 25 50 75 100 '25 ISO 175 AMBIENT TEMPERATURE CO BCW29/ 30 , Page 2 BCW29/ 30 PACKAGE DETAILS , 04 . C5 BCW29/ 30 , Page 3 SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION


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PDF BCW29 BCW30 OT-23 BCW29 BCW30 FMMT5087 BCW69 BCW70 BCX71G BCW29R BCW30R SOT213 BCV72 ferranti BFQ31A BFQ31 SOT MARKING 213
Not Available

Abstract: No abstract text available
Text: 810 mV BCW typ . 29 90 30 150 > < hFE –IC = 2 mA; –VCE = 5 V Collector


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PDF BCW29 BCW30 C-120
transistor 720 smd

Abstract: No abstract text available
Text: No file text available


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PDF BCW29 BCW30 OT-23 BCW29 transistor 720 smd
BCW29

Abstract: BCW30
Text: _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA BCW29/ 30 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO - 30 V Collector-Emitter Voltage VcEO -20 V Emitter-Base , : 0 KEC 1/2 BCW29/ 30 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage VcBO Ic=-10j/A - 30 - - V Collector-Emitter


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PDF BCW29/30 OT-23 -10j/A BCW29 BCW30 -10mA, BCW30
2012 - 23 marking

Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Complementary to BCW31/32 2 L BCW29/ 30 EPITAXIAL PLANAR PNP TRANSISTOR E B L 3 1 MAXIMUM RATING (Ta=25) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage , VCEO VEBO IC PC * Tj Tstg RATING - 30 -20 -5 -100 350 150 -65150 UNIT P P V C N V K M DIM A , IEBO TEST CONDITION IC=-10 A IC=-2mA IE=-10 A VCB=-30V VEB=-5V MIN. - 30 -20 -5 110 TYP. MAX. -100 -100


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PDF BCW31/32 BCW29/30 BCW30 BCW29 BCW30 -10mA, 23 marking
Not Available

Abstract: No abstract text available
Text: (Ie = 0) Test C o n d itio n s V cb = - 30 V VCB = - 30 V Min. Typ. Max. -100 -10 U nit


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PDF BCW29 BCW30 BCW30 OT-23 BCW29/BCW30 OT-23
2008 - BCW29

Abstract: BCW30
Text: SEMICONDUCTOR BCW29/ 30 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L DIM A B C D E G H J K L M N P D Complementary to BCW31/32 H MAXIMUM RATING (Ta=25 3 G A 2 1 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO - 30 V Collector-Emitter , . TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A - 30 - - V


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PDF BCW29/30 BCW31/32 BCW29 BCW30 -10mA, BCW29 BCW30
Not Available

Abstract: No abstract text available
Text: – bbS3T31 QQEMSbS 333 HIAPX BCW29 BCW 30 N AUER PHILIPS/DISCRETE b7E D RATINGS Limiting values , BCW29 Silicon planar epitaxial transistors B C W 30 N AMER P H IL IP S /D IS C R E T E


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PDF QQ245bl BCW29 BCW30 bb53131 00545b4
2004 - BCW29

Abstract: BCW30 BCW31 BCW32
Text: 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 MAM256 SCA76 BCW29 BCW30 BCW32
Not Available

Abstract: No abstract text available
Text: 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e e1 0.95 He 2.5 2.1 LP Q 0.55 0.45 V w 1.9 0.45 0.15 , JE C T IO N IS S U E D ATE £ 30 4 97-02-28 1999 A pr 13 Philips S em iconductors


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PDF BCW29; BCW30 BCW31 BCW32. BCW29 BCW30 115002/00/04/pp8
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