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BCV49TA Diodes Incorporated Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
BCV49H6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
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BCV49,115 Nexperia New Advantage Corporation 8,000 $0.60 $0.46
BCV49,115 Nexperia Farnell element14 - £0.33 £0.12
BCV49,115 Nexperia element14 Asia-Pacific - $0.54 $0.14
BCV49,115 Nexperia Avnet - $0.21 $0.18
BCV49,115 Nexperia element14 Asia-Pacific - $0.54 $0.14
BCV49,115 Nexperia Avnet - - -
BCV49,115 Nexperia RS Components 80 £0.19 £0.13
BCV49,115 Nexperia element14 Asia-Pacific - $0.20 $0.15
BCV49,135 Nexperia Avnet - $0.10 $0.09
BCV49H6327XTSA1 Infineon Technologies AG Avnet - $0.10 $0.09
BCV49H6327XTSA1 Infineon Technologies AG RS Components 2,600 £0.12 £0.09
BCV49TA Diodes Incorporated Chip1Stop 2,000 $0.29 $0.16
BCV49TA Diodes Incorporated Future Electronics 8,000 $0.16 $0.14
BCV49TA Diodes Incorporated element14 Asia-Pacific - $0.41 $0.19
BCV49TA Diodes Incorporated element14 Asia-Pacific - $0.41 $0.19
BCV49TA Diodes Incorporated Avnet - $0.12 $0.10
BCV49TA Diodes Incorporated Allied Electronics & Automation 23 $0.29 $0.21
BCV49TA Diodes Incorporated Farnell element14 - £0.29 £0.11
BCV49TA Diodes Incorporated Avnet - $0.34 $0.29
BCV49TA Zetex / Diodes Inc RS Components 10,800 £0.11 £0.10

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BCV49 datasheet (25)

Part Manufacturer Description Type PDF
BCV49 Diodes SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR Original PDF
BCV49 Infineon Technologies Darlington Transistors; Package: PG-SOT89-4; Polarity: NPN; V<sub>CEO</sub> (max): 60.0 V; P<sub>tot</sub> (max): 1,000.0 mW; h<sub>FE</sub> (min): 10,000.0; I<sub>C</sub>: 100.0 mA; Original PDF
BCV49 Infineon Technologies NPN Silicon Darlington Transistor Original PDF
BCV49 Philips Semiconductors NPN Darlington transistors Original PDF
BCV49 Philips Semiconductors Small Signal Darlington Transistor Original PDF
BCV49 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BCV49 Siemens Cross Reference Guide 1998 Original PDF
BCV49 Siemens NPN Silicon Darlington Transistors (For general AF applications High collector current) Original PDF
BCV49 Zetex Semiconductors SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR Original PDF
BCV49 Others Semiconductor Master Cross Reference Guide Scan PDF
BCV49 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BCV49 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BCV49 Others Transistor Shortform Datasheet & Cross References Scan PDF
BCV49 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan PDF
BCV49,115 NXP Semiconductors NPN Darlington transistors - Complement: BCV48 ; fT min: 220 typ. MHz; hFE max:&gt;10000 ; hFE min: 10000 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 1300 mW; V<sub>CES</sub> max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd Original PDF
BCV49,135 NXP Semiconductors NPN Darlington transistors - Complement: BCV48 ; fT min: 220 typ. MHz; hFE max:&gt;10000 ; hFE min: 10000 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 1300 mW; V<sub>CES</sub> max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd Original PDF
BCV49E6327 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR DARL NPN AF SOT-89 Original PDF
BCV49E6327 Infineon Technologies TRANS DARLINGTON NPN 60V 0.5A 3SOT-89 T/R Original PDF
BCV49EG Zetex Semiconductors TRANS DARLINGTON NPN 60V 0.5A 3SOT-89 Original PDF
BCV49/T3 Philips Semiconductors TRANS DARLINGTON NPN 60V 0.5A 3SOT89 T/R Original PDF

BCV49 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - BCV49

Abstract: BCV28 BCV29 BCV48
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington , Product specification NPN Darlington transistors BCV29; BCV49 FEATURES PINNING · High , sym087 MARKING CODE BCV29 EF BCV49 EG Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BCV29 BCV49 2004 Dec 06 DESCRIPTION VERSION , 2 Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49


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PDF M3D109 BCV29; BCV49 BCV28 BCV48. sym087 SCA76 R75/06/pp8 BCV49 BCV29 BCV48
2006 - Not Available

Abstract: No abstract text available
Text: BCV29, BCV49 NPN Silicon Darlington Transistors · For general AF applications · High collector current · High current gain · Complementary types: BCV28, BCV48 (PNP) 2 3 2 1 Type BCV29 BCV49 Maximum Ratings Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 , refer to Application Note Thermal Resistance 1 2006-05-03 BCV29, BCV49 Electrical , Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 V


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PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV49
Not Available

Abstract: No abstract text available
Text: NPN Silicon Darlington Transistors BCV29 BCV49 · · · · For general AF applications High , 249 BCV29 BCV49 Electrical characteristics at 7" a = 25 °C, unless otherwise specified DC characteristics Collector-emitter breakdown voltage / c = 10 mA BCV29 BCV49 Collector-base breakdown voltage Ic = 100 nA BCV29 BCV49 Emitter-base breakdown voltage I e = 10 jiA Collector cutoff current V c b = 30 V V , BCV29 BCV49 BCV29 BCV49 / EB0 - - - - 100 100 10 10 100 nA nA ma ^iA nA = 5V =


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PDF BCV29 BCV49 Q62702-C1684 Q62702-C1686 Q62702-C1853 Q62702-C1832
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 , MARKING CODE BCV29 EF BCV49 EG Fig. 1 Simplified outline (SOT89) and symbol. LIMITING , 30 V BCV49 - 60 V - 10 V LU C Û collector-emitter voltage o II 40 BCV49 VcES - > BCV29 V ebo emitter-base voltage open collector lc , ; BCV49 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS R th j-a thermal resistance


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PDF BCV29; BCV49 BCV28 BCV48. BCV29
2009 - BCV48

Abstract: BCV29
Text: BCV29, BCV49 NPN Silicon Darlington Transistors · For general AF applications · High collector , Qualified according AEC Q101 3 1 2 2 Type BCV29 BCV49 Maximum Ratings Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 Emitter-base voltage Collector current Marking , Storage temperature W °C -65 . 150 1 2011-10-05 BCV29, BCV49 Thermal Resistance , Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 Unit V


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PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV49 BCV48
2004 - BCV29

Abstract: No abstract text available
Text: BCV29, BCV49 NPN Silicon Darlington Transistors For general AF applications High collector , BCV49 Maximum Ratings Parameter Marking EF EG 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT89 SOT89 Symbol VCEO VCBO VEBO BCV29 30 40 10 BCV49 60 80 10 Unit V , to Application Note Thermal Resistance 1 Jul-12-2001 BCV29, BCV49 Electrical , BCV49 1) Pulse test: t 300µs, D = 2% Unit max. V typ. V(BR)CEO BCV29 BCV49 V(BR)CBO BCV29


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PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49
2007 - BCV48

Abstract: bcv49 npn darlington BCV28 BCV29 BCV49
Text: BCV29, BCV49 NPN Silicon Darlington Transistors · For general AF applications 1 2 · High , Package BCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG 1=B 2=C 3=E SOT89 , 30 BCV49 60 Collector-base voltage VCBO BCV29 40 BCV49 80 Emitter-base , -containing -65 . 150 package may be available upon special request 1 2007-03-29 BCV29, BCV49 , BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit


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PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV48 bcv49 npn darlington BCV28 BCV29 BCV49
2001 - BCV49

Abstract: BCV28 BCV29 BCV48
Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1 For general AF applications , =E 4=C SOT89 BCV49 EG 1=B 2=C 3=E 4=C SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV29 BCV49 VCEO 30 60 Collector-base , Thermal Resistance 1 Jul-12-2001 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless , Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V V(BR)CEO BCV29 30 - - BCV49 60 -


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PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 EHP00322 BCV49 BCV28 BCV29 BCV48
sot89 marking 93

Abstract: MARKING 93 SOT89 sot89 93 marking code EF
Text: current (max. 500 mA) · Low voltage (max. 60 V) · High DC current gain (min. 20000). BCV29; BCV49 , . PNP complements: BCV28 and BCV48. MARKING TYPE NUMBER BCV29 BCV49 MARKING CODE EF EG Fig , voltage BCV29 BCV49 collector-emitter voltage BCV29 BCV49 collector current (DC) total power dissipation , 4000 2000 4000 10000 2000 = - - 100 mA 500 mA 5V 1 mA h FE DC current gain BCV49 Vce , specification NPN Darlington transistors BCV29; BCV49 LIMITING VALUES In accordance with the Absolute


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PDF BCV29; BCV49 BCV28 BCV48. BCV29 BCV49 sot89 marking 93 MARKING 93 SOT89 sot89 93 marking code EF
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 BCV29; BCV49 NPN Darlington , Product data sheet NPN Darlington transistors BCV29; BCV49 FEATURES PINNING • High , sym087 MARKING CODE BCV29 EF BCV49 EG Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BCV29 BCV49 2004 Dec 06 DESCRIPTION VERSION , 2 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49


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PDF M3D109 BCV29; BCV49 BCV28 BCV48. sym087 BCV29 R75/06/pp8
2005 - Not Available

Abstract: No abstract text available
Text: BCV29, BCV49 NPN Silicon Darlington Transistors For general AF applications High collector , BCV49 Maximum Ratings Parameter Marking EF EG 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT89 SOT89 Symbol VCEO VCBO VEBO BCV29 30 40 10 BCV49 60 80 10 Unit V , to Application Note Thermal Resistance 1 Jul-12-2001 BCV29, BCV49 Electrical , BCV49 1) Pulse test: t 300µs, D = 2% Unit max. V typ. V(BR)CEO BCV29 BCV49 V(BR)CBO BCV29


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PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49
marking code EF

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BCV29; BCV49 NPN Darlington transistors Product , Low voltage (max. 60 V) · High DC current gain (min. 20000). BCV29; BCV49 PINNING PIN 1 2 3 , : BCV28 and BCV48. TR 2 MARKING TYPE NUMBER BCV29 BCV49 MARKING CODE EF EG Fig. 1 Simplified , 134). SYMBOL VcBO PARAMETER collector-base voltage BCV29 BCV49 > CONDITIONS open emitter - MIN. MAX. UNIT 40 80 V V o VcES collector-emitter voltage BCV29 BCV49


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PDF BCV29; BCV49 BCV49 BCV28 BCV48. BCV29 115002/00/05/pp8 marking code EF
1997 - BCV28

Abstract: BCV29 BCV48 BCV49 ic str 6707
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington , ; BCV49 FEATURES PINNING · High current (max. 500 mA) PIN DESCRIPTION · Low voltage (max , BCV29 EF BCV49 EG Fig.1 Simplified outline (SOT89) and symbol. QUICK REFERENCE DATA , emitter BCV29 - 40 V BCV49 - - 80 V BCV29 - - 30 V BCV49 , BCV29 hFE DC current gain BCV49 fT 1997 Apr 21 transition frequency VCE = 5 V IC =


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PDF M3D109 BCV29; BCV49 BCV28 BCV48. SCA54 117047/00/04/pp8 BCV29 BCV48 BCV49 ic str 6707
2009 - BCV28

Abstract: BCV29 BCV48 BCV49
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BCV29; BCV49 NPN Darlington , Product data sheet NPN Darlington transistors BCV29; BCV49 FEATURES PINNING · High current , sym087 MARKING CODE BCV29 EF BCV49 EG Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BCV29 BCV49 2004 Dec 06 DESCRIPTION VERSION , 2 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49


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PDF M3D109 BCV29; BCV49 BCV28 BCV48. sym087 BCV29 R75/06/pp8 BCV29 BCV48 BCV49
1999 - StR 40000

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington , Product specification NPN Darlington transistors BCV29; BCV49 FEATURES PINNING · High , MARKING MAM300 Bottom view TYPE NUMBER MARKING CODE BCV29 EF BCV49 EG Fig , . UNIT open emitter BCV29 40 V BCV49 - 80 V BCV29 - 30 V BCV49 , NPN Darlington transistors BCV29; BCV49 THERMAL CHARACTERISTICS SYMBOL PARAMETER


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PDF M3D109 BCV29; BCV49 BCV28 BCV48. MAM300 SCA63 115002/00/05/pp8 StR 40000
Not Available

Abstract: No abstract text available
Text: BCV29 BCV49 SMALL-SIGNAL DARLINGTON TRANSISTOR N P N sm all-signal d a rlin g to n tra n s is , gain Iq = 1 m A ; lc = BCV49 80 60 10 500 v CBO v CEO v E BO 'c m a x. m a x. m a x. m a x , ; area = 2 .5 c m 2 ; th ic k n e s s = 0 .7 m m . September 1994 241 BCV29 BCV49 RATINGS L , m a x. m a x. m a x, m a x. 40 30 BCV49 80 60 10 500 10 500 'c 10 - 6 5 to + 150 , 1.0 m in . m in . m in . m in . 4000 10000 20000 4000 2000 4000 10000 2000 LU LL BCV49 60 V (B


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PDF BCV29 BCV49 BCV49
Not Available

Abstract: No abstract text available
Text: ■bbSBisi ooaMsm boa bapx N AMER PHILIPS/DISCRETE BCV29 BCV49 b7E D J V , voltage Collector-emitter voltage Emitter-base voltage BCV49 v CB0 max. 40 80 v CEO , BCV49 }, N AMER PHILIPS/DISCRETE b?E » RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BCV49 BCV29 Collector-base voltage v CBO max. 40 80 V 30 , Collector-emitter breakdown voltage lc = 10 mA BCV49 V (BR)CES min. 30 60 V v (BR)CBO min


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PDF BCV29 BCV49 BCV28/48.
S089

Abstract: Transistor s44 BCV29 BCV49
Text: ■bb5313]> DD24Sm bOÔ BAPX N AMER PHILIPS/DISCRETE b7E D J BCV29 BCV49 SMALL-SIGNAL , base 3 = collector 1,6 1 A' BCV29 BCV49 vCB0 max. 40 80 V vCEO max. 30 60 V vEBO max. 10 10 , Copyrighted By Its Respective Manufacturer I hbSaiai QQ2454E S44 ■APX BCV29 BCV49 AMER PHILIPS/DISCRETE , hFE hFE hFE hFE VcEsat VBEsat fT cob max. max, max. max. max. BCV29 BCV49 40 80 V 30 60 V 10 10 V 500 500 mA 1.0 W -65 to + 150 oC 150 °C 125 K/W BCV29 BCV49 30 60 V 40 80 V 10


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PDF bb5313] DD24Sm BCV29 BCV49 BCV28/48. S089 Transistor s44 BCV49
Not Available

Abstract: No abstract text available
Text: / BM P to t r¡ Siemens K/W 249 32E D ■Ô23b32ü OQlbbTS 1 WMSIP BCV29 BCV49 , C V 29 BCV49 Ic Collector cutoff current V'c b = 30 V ^ cB ^ eov 1/cb = 3 0 V , rA= 150 , / G01bb7b SPCLi 3 WÊSIP BCV29 BCV49 SEMICONDS T-29-29 C ollector cutoff current I c bo = f , 251 32E D ■Ô53b350 SIEMENS/ SPCLn G01bb77 5 « S IP BCV29 BCV49


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PDF 23b320 Q62702-C1684 Q62702-C1686 Q62702-C1853 Q62702-C1832 53b350 G01bb77 BCV29 BCV49 T-29-29
Not Available

Abstract: No abstract text available
Text: ENS BCV 29 BCV49 Electrical Characteristics at 7a = 25 'C, unless otherwise specified , Semiconductor Group 1090 '■öH35bQ5 DIHDTHS bbb ■1998-11-01 SIEMENS BCV29 BCV49


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PDF Q62702-C1853 Q62702-C1832 OT-89 235bD5 D12M3fa 0120R37
2N2907 SOT-23

Abstract: 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot BC548 cross reference 2N2907 CROSS
Text: BCX41 BCV27 SMBT6427 SMBT6428 SMBT6429 BFN24 BFN26 BFN25 BFN17 BCV29 BCV49 BFN37 BCP29 BCP49 , BC859 BC860 BCV47 SMBTA13 BCV47 SOT143 SOT-323 BC850W BC856W BC857W BC858W BC859W BC860W BCV29 BCV49


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PDF 1N4001 1N4002 1N4003 1N4004 1N40Q1 1N4002 1N4003 1N4004 1N4148 OD-123 2N2907 SOT-23 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot BC548 cross reference 2N2907 CROSS
sot-89 marking BES

Abstract: CE030
Text: . Semiconductor Group 837 5.91 SIEMENS BCV 29 BCV49 Electrical Characteristics at 7a = 25 'C , " Semiconductor Group 839 SIEMENS b c v 29 BCV49 Collector-emitter saturation voltage / c =


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PDF Q62702-C1853 Q62702-C1832 OT-89 CHP00319 BCV49 sot-89 marking BES CE030
BC517 "cross reference"

Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
Text: BCV48 BCX18LT1 BCX18 BCV49 BCV49 BCX19 BCX19 BCV61/A/B/C BCV61 BCX19LT1 , PXT3906 MUN5211T1 PDTC114EU RXTA14 PXTA14 MUN5212DW1T1 PUMH1 RXTA28 BCV49


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PDF 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774 2PA1774Q BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
2N2907 SOT-23

Abstract: BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 2n2222 sot-23 BB409 BC517 "cross reference" 2N3563
Text: BFN25 2N5551 BCX41 2N6426 BCV27 BCV29 BCP29 BCV49 BCP49 BFN16 2N6427 , BC860 BC860W BC617 BCV47 SMBTA13 BCV29 BCP49 PZTA13 BC618 BCV47 BCV49


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PDF OT-89 OT-223 1N4001 OD-323 SCD-80 OT-23 OT-143 OT-323 OT-343 OT-363 2N2907 SOT-23 BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 2n2222 sot-23 BB409 BC517 "cross reference" 2N3563
1998 - BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 1N4148 SOD-123 2N2907 SOT-23 2n2222 smd
Text: -363 SCT-595 SOT-89 SOT-223 BFN17 BFN37 BCV29 BCV49 BCP29 BCP49 BFN16 BFN18 BFN17 , BCX42 BCW60 BCX70 BCW65 BCW66 BCW67 BCW68 BCW61 BCX71 BC850 BC849 BCV49 BCX54 BCX51


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PDF OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 1N4148 SOD-123 2N2907 SOT-23 2n2222 smd
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