BCR119W |
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Infineon Technologies
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NPN Silicon Digital Transistor |
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BCR119W |
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Infineon Technologies
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R1=4.7 k ? |
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BCR119W |
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Infineon Technologies
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Single AF Transistors for General Purpose Applications |
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BCR119W |
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Infineon Technologies
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Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 4.7 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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BCR119W |
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Siemens
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
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BCR119WE6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
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BCR119WE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
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BCR119WH6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
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BCR119WH6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
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