The Datasheet Archive

Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
BCR112E6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
BCR112WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BCR 112 E6327 Infineon Technologies AG Chip One Exchange 395 - -
BCR 112 E6327 Infineon Technologies AG Chip One Exchange 2,500 - -
BCR 112W H6327 Infineon Technologies AG Avnet 12,000 €0.03 €0.02
BCR112-E6327 Infineon Technologies AG Chip One Exchange 1,822 - -
BCR112E6327 Infineon Technologies AG Avnet 21,000 $0.11 $0.03
BCR112E6327 Infineon Technologies AG Avnet - €1.09 €1.09
BCR112E6327 Infineon Technologies AG Avnet - €0.03 €0.02
BCR112E6327 Infineon Technologies AG America II Electronics 1,898 - -
BCR112E6327 Infineon Technologies AG ComS.I.T. 2,555 - -
BCR112E6327HTSA1 Infineon Technologies AG Chip1Stop 582 $0.07 $0.06
BCR112E6327HTSA1 Infineon Technologies AG Avnet - $0.02 $0.02
BCR112E6327HTSA1 Infineon Technologies AG Farnell element14 24,620 £0.11 £0.03
BCR112E6327HTSA1 Infineon Technologies AG Schukat electronic 32,500 €0.03 €0.02
BCR112E6327HTSA1 Infineon Technologies AG RS Components 28,595 £0.04 £0.02
BCR112E6327HTSA1 Infineon Technologies AG Newark element14 21,505 $0.21 $0.05
BCR112E6327HTSA1 Infineon Technologies AG Future Electronics - $0.03 $0.03
BCR112E6327HTSA1 Infineon Technologies AG RS Components 3,250 £0.10 £0.02
BCR112FE6327 Infineon Technologies AG America II Electronics 36,000 - -
BCR112WE6327 Infineon Technologies AG ComS.I.T. 5,970 - -
BCR112WE6327 Infineon Technologies AG Chip One Exchange 72,000 - -
BCR112WH6327 Infineon Technologies AG Rochester Electronics 15,000 $0.04 $0.03
BCR112WH6327XTSA1 Infineon Technologies AG Avnet - €0.03 €0.02
BCR112WH6327XTSA1 Infineon Technologies AG RS Components 36,500 £0.01 £0.01
BCR112WH6327XTSA1 Infineon Technologies AG Avnet 30,000 $0.03 $0.03
UBC-R112-56C-7ATS-TB(HF) JST Manufacturing element14 Asia-Pacific - $3.16 $3.16
UBC-R112-56C-7ATS-TB(HF) JST Manufacturing element14 Asia-Pacific 803 $3.05 $1.93
UBC-R112-56C-7ATS-TB(HF) JST Manufacturing Farnell element14 774 £1.10 £0.83
UBC-R112-56C-7ATS(HF) JST Manufacturing RS Components 9 £1.29 £1.10

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BCR112 datasheet (28)

Part Manufacturer Description Type PDF
BCR112 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 Original PDF
BCR112 Infineon Technologies R1=4.7 k ? R2=4.7 k ? Original PDF
BCR112 Infineon Technologies Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 4.7 kOhm; R<sub>2</sub>: 4.7 k?; h<sub>FE</sub> (min): 20.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V; Original PDF
BCR112 Infineon Technologies NPN Silicon Digital Transistor Original PDF
BCR112 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BCR112 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BCR112 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BCR112E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original PDF
BCR112E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN DGTL AF SOT-23 Original PDF
BCR112F Infineon Technologies NPN Silicon Digital Transistor Original PDF
BCR112FE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original PDF
BCR112FE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original PDF
BCR112L3 Infineon Technologies NPN Silicon Digital Transistor Original PDF
BCR112L3E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSLP-3-4 T/R Original PDF
BCR112L3E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 Original PDF
BCR112T Infineon Technologies NPN Silicon Digital Transistor Original PDF
BCR112TE6327 Infineon Technologies Digital Transistors - R1=4.7 kOhm, R2=4.7 kOhm Original PDF
BCR112TE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SC75 Original PDF
BCR112-T&R Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original PDF
BCR112U Infineon Technologies NPN Silicon Digital Transistor Original PDF

BCR112 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - WFs transistor

Abstract: WFs SOT23
Text: Marking Pin Configuration Package BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W WFs WFs WF , °C BCR112T , TS 109°C BCR112U , TS 118°C BCR112W , TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For , transistors with good matching in one package BCR112 /F/L3 BCR112T /W C 3 BCR112U C1 6 B2 5 E2 4 , 0 tp tp 6 Aug-29-2003 BCR112. Permissible Puls Load RthJS = (tp) BCR112F 10 2


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PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23
2007 - BCR108W

Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
Text: -65 . 150 Value BCR112 240 BCR112F 90 BCR112W Unit K/W 105 - 1For , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit , information below · Pb-free (RoHS compliant) package1) · Qualified according AEC Q101 BCR112 /F BCR112W , =C - - - SOT23 BCR112F WFs 1=B 2=E 3=C - - - TSFP-3 BCR112W , package may be available upon special request 1 2007-09-17 BCR112. Maximum Ratings Parameter


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PDF BCR112. BCR112U: BCR112/F BCR112W EHA07184 BCR112 BCR112F OT323 BCR108W BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
2009 - WFs transistor

Abstract: No abstract text available
Text: 2011-09-15 BCR112. Permissible Puls Load RthJS = (t p) BCR112W 10 3 K/W Permissible Pulse Load , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 B 2 E EHA07184 Type BCR112 BCR112W Marking , mA mW Unit V 1 2011-09-15 BCR112. Thermal Resistance Parameter Junction - soldering point1) BCR112 BCR112W Symbol RthJS Value 240 105 Unit K/W 1For calculation of R thJA please


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PDF BCR112. BCR112 BCR112W EHA07184 OT323 dissipationBCR112, BCR112W, 2011-0components WFs transistor
2005 - WFs transistor

Abstract: SOT323 WF E6327 BCR112U BCR112T BCR112L3 BCR112W BCR112F BCR112 infineon marking code B2 SOT23
Text: °C 200 BCR112F , TS 128°C 250 BCR112L3 , TS 135°C 250 BCR112T , TS 109°C 250 BCR112U , -65 . 150 Value BCR112 240 BCR112F 90 BCR112L3 60 BCR112T 165 , ) internal isolated transistors with good matching in one package BCR112 /F/L3 BCR112T /W BCR112U C , -29-2003 BCR112. Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR112T Ptotmax/P totDC = , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit


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PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF E6327 BCR112U BCR112T BCR112L3 BCR112W BCR112F BCR112 infineon marking code B2 SOT23
2001 - BCR112

Abstract: No abstract text available
Text: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2 , -29-2001 BCR112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Nov-29-2001 BCR112 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage , (off) 3 Nov-29-2001 BCR112 Total power dissipation Ptot = f (TS ) 300 Ptot mW


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PDF BCR112 VPS05161 EHA07184 Nov-29-2001 BCR112
2003 - WFs transistor

Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
Text: °C 200 BCR112F , TS 128°C 250 BCR112L3 , TS 135°C 250 BCR112T , TS 109°C 250 BCR112U , -65 . 150 Value BCR112 240 BCR112F 90 BCR112L3 60 BCR112T 165 , ) internal isolated transistors with good matching in one package BCR112 /F/L3 BCR112T /W BCR112U C , -29-2003 BCR112. Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR112T Ptotmax/P totDC = , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit


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PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
2006 - Not Available

Abstract: No abstract text available
Text: BCR112 /F/L3 BCR112T /W C 3 BCR112U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR112 BCR112F BCR112L3 BCR112T BCR112U , 102°C BCR112F , TS 128°C BCR112L3 , TS 135°C BCR112T , TS 109°C BCR112U , TS 118°C BCR112W , TS 124 , BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For calculation of R thJA please refer to Application Note , 150 TS TS 5 2006-05-04 BCR112. Total power dissipation Ptot = (TS) BCR112U 300 mW


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PDF BCR112. BCR112U: BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F
2001 - BCR112

Abstract: No abstract text available
Text: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2 , -16-2001 BCR112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , ; D < 2% 2 Jul-16-2001 BCR112 DC Current Gain hFE = f (IC ) Collector-Emitter , V 2.0 Vi(off) 3 Jul-16-2001 BCR112 Total power dissipation Ptot = f (TS ) 300


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PDF BCR112 VPS05161 EHA07184 Jul-16-2001 BCR112
1997 - 74XX32

Abstract: transistor B c167 SAC-C167 p61 smd transistor C1167 transistor c167 smd transistor P63 C16X SABC16X siemens software c167
Text: . The BCR112 is a integrated digital switch comprising of two resistors and a NPN transistor connected , resistor are a integral part of the BCR112 this eliminates the need for additional external devices. The BCR112 digital switch performs two functions. First it converts the CPU VCC to a negative true logic , gates in a 74XX32 type device and that the BCR112 logic need not be repeated for each chip select , . 5VDC 100K P6.1 CS 1 P6.2 CS 2 P6.3 CS 3 P6.4 CS 4 CPU VCC BCR112 FIGURE 2: The


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PDF C16x-Family 74XX32 transistor B c167 SAC-C167 p61 smd transistor C1167 transistor c167 smd transistor P63 C16X SABC16X siemens software c167
2007 - 74LX1G125

Abstract: BCR112 F525L SD10 STW8009 SD524
Text: SD6 1V8 1 BCR112 DC2 1K8 R12 2.8V SD8 1V8 22R 1 5 4 1 2 3 n1G 1A GND MASTER C12 10nF BCR112 DC1 74LX1G125 VCC 1Y U4 SD9 1 2 3 , 1 C12 10nF 4 2 DC1;DC2 BCR112 5 2 L1;L2 2.2uH 6 1 L3


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smd marking gc

Abstract: CGY 8 pin Q62702-G98 rxic smd marking code vd T1006
Text: 22 pF 10 nF R1 10 k C 12 0.5 pF X3 SMA BCR112 V2 RF X6 A Figure 2 C5 1.8 pF GND Backside MW16 CGY 360 17 R2 10 k X5 X2 SMA IC1 10 pF BCR112


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PDF MW-16 Q62702-G98 EHT08785 GPW05969 smd marking gc CGY 8 pin Q62702-G98 rxic smd marking code vd T1006
Not Available

Abstract: No abstract text available
Text: . LO RES VDLO VDRF2 GND1 A /A RF □ IC1 O CGY360 X3 □ 17 BCR112 , > o o Q. CM CM ° BCR112 SMA CM CM X4 VD O - V1 IF > ) Q. Q. O o


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PDF CGY360 MW-16 S9000 IS09001
2007 - 74LX1G125

Abstract: BCR112 F525L SD10 STW8009 imagik tdi ccd 4P SOT323
Text: SD6 1V8 1 BCR112 DC2 1K8 R12 2.8V SD8 1V8 22R 1 5 4 1 2 3 n1G 1A GND MASTER C12 10nF BCR112 DC1 74LX1G125 VCC 1Y U4 SD9 1 2 3 , 1 C12 10nF 4 2 DC1;DC2 BCR112 5 2 L1;L2 2.2uH 6 1 L3


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PDF
1999 - Not Available

Abstract: No abstract text available
Text: BCR112 X5 X3 SMA BCR112 RF X6 A Notes: C10 10nF X8 C11 10nF IF VDIF


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PDF QS9000 ISO9001
BCR553

Abstract: BCR108W sot323 BCR133 SOT-23 cimax
Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics (TA=25°C) j. /x FE(mln) / Case V., , , Vi(off)mai; Style 100(1. A /5 V VCEO V V ^ (o n ) ^Cimax) mA mW R2 k il k ii MHz 10mA/5V =5mA VCE =5V Lead Code 2mA/0.3V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W BCR146 BCR 148 BCR148W BCR158 BCR162 BCR166 BCR169 BCR183 BCR185


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PDF 10mA/5V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR553 BCR108W sot323 SOT-23 cimax
w 3425 nf

Abstract: smd code book BCR112 3425 nf smd marking code vd smd marking code book smd marking AB 6 PIN SMD MARKING CODE L6 Q62702-G82 MW-16
Text: X8 VD 10 k 22 nH C3 10 nF C6 22 pF L6 2.7 nH X3 SMA BCR112 V1 RF X5


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PDF MW-16 Q62702-G82 BCR112 EHT08776 GPW05969 w 3425 nf smd code book BCR112 3425 nf smd marking code vd smd marking code book smd marking AB 6 PIN SMD MARKING CODE L6 Q62702-G82 MW-16
BC517 "cross reference"

Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
Text: BC849BLT1 BC849B BCR112 PDTC143ET BC849CLT1 BC849C BCR112W PDTC143EU BC850BLT1


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PDF 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774 2PA1774Q BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
smd code book L2

Abstract: 340 mmic
Text: C6 10 nF 22 pF L6 2.7 nH X3 SMA BCR112 V1 RF X5 A Figure 2 Notes


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PDF MW-16 GPW05969 smd code book L2 340 mmic
1999 - CGY340

Abstract: No abstract text available
Text: C16 10nF V1 BCR112 C12 22pF GND backside MW16 C15 10nF &*< 3LQ 'HILQLWLRQV DQG


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PDF 270mA QS9000 ISO9001 CGY340
wireless vga circuit

Abstract: No abstract text available
Text: L5 22nH X3 SMA V1 BCR112 X5 /A Notes: Package of all resistors and capacitors


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PDF 270mA QS9000 ISO9001 wireless vga circuit
2009 - 2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: BCR108 BCR108W BCR112 BCR112W BCR116 BCR116W BCR119 BCR119W BCR129 BCR129W BCR133 BCR133W


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PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
2010 - Micron MT47H64M16HR

Abstract: CON30A MT47H64M16HR-3E MT47H64M16HR-3 yk Rubycon XCF32PVOG48C Omron Programming Console c20 Nand512W3A2CZA spear-09-p022 DB9 omron
Text: TYCO Electronics AMP 5747840-2 46 2 Q1, Q2 BCR112 INFINEON BCR112E6327 47 1


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PDF UM0805 EVALSPEAr600 SPEAr600 SPEAr600 SPEAr600. Micron MT47H64M16HR CON30A MT47H64M16HR-3E MT47H64M16HR-3 yk Rubycon XCF32PVOG48C Omron Programming Console c20 Nand512W3A2CZA spear-09-p022 DB9 omron
2010 - Micron MT47H64M16HR

Abstract: transistor c102 MT47H64M16HR-3 IT MT47H64M16HR-3 XCF32PVOG48C CON30A Omron Programming Console c20 MT47H64M16HR-3E omron c200 JK065401NL
Text: 45 1 P1 CON. DB9 Male TYCO Electronics AMP 5747840-2 46 2 Q1, Q2 BCR112 INFINEON BCR112E6327 47 1 Q3 BC848 INFINEON BC848CE6327 Table 13. Resistors


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PDF UM0805 EVALSPEAr600 SPEAr600 SPEAr600 SPEAr600. Micron MT47H64M16HR transistor c102 MT47H64M16HR-3 IT MT47H64M16HR-3 XCF32PVOG48C CON30A Omron Programming Console c20 MT47H64M16HR-3E omron c200 JK065401NL
2007 - cdma Booster schematic

Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Text: No file text available


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PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
Text: No file text available


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
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