BCR108W |
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Infineon Technologies
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NPN Silicon Digital Transistor |
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BCR108W |
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Infineon Technologies
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Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V |
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BCR108W |
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Infineon Technologies
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R1=2.2 k ? R2=47 k ? |
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BCR108W |
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Infineon Technologies
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TRANS DIGITAL BJT NPN 50V 100MA 3SOT-323 |
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BCR108W |
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Infineon Technologies
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Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 2.2 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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BCR108W |
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Siemens
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
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Original |
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BCR108W |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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BCR108WE6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
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BCR108WE6327 |
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Infineon Technologies
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TRANS DIGITAL BJT NPN 50V 100MA 3SOT-323 T/R |
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Original |
PDF
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BCR108WE6327 |
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Infineon Technologies
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Digital Transistors - R1=2.2 kOhm, R2=47 kOhm |
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Original |
PDF
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BCR108WE6327BTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
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BCR108WH6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
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Original |
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BCR108WH6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
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Original |
PDF
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BCR108WH6433 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
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Original |
PDF
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BCR108WH6433XTMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
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Original |
PDF
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