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Part Manufacturer Description Datasheet Download Buy Part
BC860CWH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
BC860CE6359HTMA1 Infineon Technologies AG TRANS PREBIAS PNP SOT23
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC 860CW H6327 Infineon Technologies AG Avnet 87,000 €0.03 €0.02
BC 860CW H6327 Infineon Technologies AG Avnet 15,000 €0.03 €0.02
BC860C Fairchild Semiconductor Corporation America II Electronics 2,644 - -
BC860C Fairchild Semiconductor Corporation Rochester Electronics 15,000 $0.11 $0.09
BC860C Philips Semiconductors New Advantage Corporation 5 - -
BC860C Nexperia Farnell element14 - £0.15 £0.04
BC860C Philips Semiconductors Chip One Exchange 3,591 - -
BC860C Philips Semiconductors Bristol Electronics 2,800 - -
BC860C Fairchild Semiconductor Corporation Bristol Electronics 1,500 - -
BC860C Nexperia element14 Asia-Pacific - $0.15 $0.03
BC860C Diotec Semiconductor AG TME Electronic Components 4,780 $0.04 $0.02
BC860C Nexperia element14 Asia-Pacific - $0.15 $0.03
BC860C Philips Semiconductors ComS.I.T. 2,300 - -
BC860C,215 Nexperia Future Electronics - $0.03 $0.02
BC860C,215 Nexperia Future Electronics - $0.02 $0.02
BC860C,215 Nexperia New Advantage Corporation 27,000 $0.04 $0.04
BC860C,215 Nexperia Avnet - - -
BC860C,215 Nexperia Avnet - - -
BC860C,215 Nexperia Chip1Stop 211 $0.03 $0.03
BC860C,215 Nexperia element14 Asia-Pacific - $0.03 $0.03
BC860C,215 Nexperia Chip1Stop 211 $0.02 $0.02
BC860C,235 Nexperia Future Electronics - $0.03 $0.03
BC860C,235 Nexperia Avnet - $0.02 $0.01
BC860CW NXP Semiconductors ComS.I.T. 22,315 - -
BC860CW NXP Semiconductors America II Electronics 7,035 - -
BC860CW Nexperia RS Components 600 £0.02 £0.01
BC860CW Nexperia RS Components 800 £0.03 £0.01
BC860CW,115 Nexperia Avnet 18,000 $0.03 $0.02
BC860CW,115 Nexperia element14 Asia-Pacific - $0.02 $0.02
BC860CW,115 Nexperia element14 Asia-Pacific - $0.16 $0.03
BC860CW,115 Nexperia element14 Asia-Pacific - $0.16 $0.03
BC860CW,115 Nexperia New Advantage Corporation 474,000 $0.02 $0.02
BC860CW,115 Nexperia Avnet 30,000 $0.08 $0.02
BC860CWE6327 Infineon Technologies AG Rochester Electronics 122,900 $0.02 $0.02
BC860CWH6327 Infineon Technologies AG TME Electronic Components 5,695 $0.03 $0.02
BC860CWH6327 Infineon Technologies AG Rochester Electronics 51,000 $0.02 $0.02
BC860CWH6327XTSA1 Infineon Technologies AG Rochester Electronics 282,000 $0.04 $0.03

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BC860C datasheet (41)

Part Manufacturer Description Type PDF
BC860C Continental Device India Silicon Planar Epitaxial Transistors, SOT-23 Original PDF
BC860C Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC860C Fairchild Semiconductor Switching and Amplifier Applications Original PDF
BC860C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BC860C Infineon Technologies PNP Silicon AF Transistor Original PDF
BC860C Infineon Technologies SOT23 package Original PDF
BC860C Philips Semiconductors PNP general purpose transistors Original PDF
BC860C Siemens NPN Silicon AF Transistor Original PDF
BC860C Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF
BC860C ITT Semiconductors PNP Silicon Epitaxial Planar Transistor Scan PDF
BC860C Motorola European Master Selection Guide 1986 Scan PDF
BC860C Others Transistor Shortform Datasheet & Cross References Scan PDF
BC860C Others Catalog Scans - Shortform Datasheet Scan PDF
BC860C National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan PDF
BC860C Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
BC860C,215 NXP Semiconductors PNP general purpose transistors - Complement: BC850C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BC860C,235 NXP Semiconductors PNP general purpose transistors - Complement: BC850C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BC860C-4GZ Zetex Semiconductors PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR Original PDF
BC860CB5003 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 100MA 45V SOT-23 Original PDF
BC860CL Motorola Low Noise PNP Silicon Transistors, SOT-23 Scan PDF

BC860C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - BC860C

Abstract: BC849 BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
Text: 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C; BC860C. , * BC860C 4G* 2 4F* BC859C 2 1 Top view MAM256 Note 1. * = p : Made in Hong Kong , package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , V; see Figs 2 and 3 220 - 475 420 - 800 BC859B; BC860B BC859C; BC860C , - 4 dB BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B; BC859C; BC860C


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
4gp transistor

Abstract: BC859 BC860 PHILIPS marking Code 5C marking 4Gp BC860C
Text: ; BC860 BC85SC; BC860C. Fig.4 DC current gain; typical values. 1997 May 26 353 , BC860C MARKING CODE 4Hp 4Ep 4Fp 4Gp Fig.1 Simplified outline (SOT23) and symbol. Top view QUICK , current gain DC current gain BC859A; BC860A BC859B: BC860B BC859C; BC860C CONDITIONS |E = 0; VCB = -3 , ; BC860B BC859C; BC860C lc = -10 mA; Ib = -0.5 mA; note 1 lc = -100 mA; Ib = - 5 mA; note 1 lc = - 2 , Hz - - 4 F noise figure BC859A; BC860A BC859B; BC860B BC859C; BC860C 10 4 . . dB


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PDF BC859; BC860 BC849 BC850. BC859 BC859A BC859B BC859C BC860 BC860A 4gp transistor PHILIPS marking Code 5C marking 4Gp BC860C
2009 - BC860C

Abstract: No abstract text available
Text: 300 200 100 0 −10−2 −10−1 −1 −10 BC859C; BC860C. Fig.3 DC current , * BC860C 4G* 2 4F* BC859C 2 1 Top view MAM256 Note 1. * = p : Made in Hong Kong , package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , ˆ’ 475 420 − 800 BC859B; BC860B BC859C; BC860C collector-emitter saturation voltage , ; BC860C noise figure BC859B; BC860B; BC859C; BC860C Notes 1. VBEsat decreases by about −1.7 mV/K


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C
2004 - BC860C

Abstract: BC860 BC849 BC850 BC859 BC859B BC859C BC860B
Text: BC859C; BC860C. Fig.3 DC current gain; typical values. 2004 Jan 16 5 -102 IC (mA) -103 , * BC860C 4G* 2 4F* BC859C 2 1 Top view MAM256 Note 1. * = p : Made in Hong Kong , package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 Philips , ; BC860B BC859C; BC860C collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - -75 , ; B = 200 Hz - - 4 dB BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C SCA76 BC860C BC860 BC850 BC859 BC859B BC859C BC860B
BC860C

Abstract: No abstract text available
Text: ) BC859B 4B* BC860B 4F* BC859C 4C* BC860C 2 - 2 1 4G* Top V ie w , BC859C; BC860C 420 800 VBEsat lc = -1 0 mA; lB = -0 .5 mA - -7 5 -3 0 0 mV lc , ; lB = - 5 mA; note 1 VcEsat BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B; BC859C; BC860C Notes 1■VBEsat decreases by about -1 .7 mV/K with increasing temperature. 2


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PDF BC859; BC860 BC849 BC850. BC859B BC860B BC859C BC860C MAM256 BC860C
1999 - BC859B 215

Abstract: BC860C
Text: hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C; BC860C. , 4B BC860B 4F BC859C 4C BC860C 2 1 2 4G Top view MAM256 Note 1. = , BC859C; BC860C VCEsat collector-emitter saturation voltage base-emitter saturation voltage IC = , Hz - - 4 dB BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B; BC859C; BC860C Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by


Original
PDF M3D088 BC859; BC860 BC849 BC850. BC859B BC860B 115002/04/pp8 BC859B 215 BC860C
1997 - BC860

Abstract: BC859B 215 BC860C BC859A BC860B BC860A BC859C BC859B BC859 BC850
Text: hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C; BC860C. , BC859C 4Cp BC860C MAM256 4Ep BC859B 2 Top view 4Hp BC859A 1 4Gp Fig , -5 V; see Figs 2, 3 and 4 125 - 250 BC859B; BC860B 220 - 475 BC859C; BC860C , - - 4 dB BC859A; BC860A BC859B; BC860B BC859C; BC860C F noise figure BC859A; BC860A IC = -200 µA; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz BC859B; BC860B BC859C; BC860C


Original
PDF M3D088 BC859; BC860 BC849 BC850. SCA54 117047/00/02/pp12 BC860 BC859B 215 BC860C BC859A BC860B BC860A BC859C BC859B BC859 BC850
SMD TRANSISTOR MARKING 4c

Abstract: 4F smd transistor NF marking TRANSISTOR SMD 4f BC859 smd smd transistor 4b smd marking rs MARKING SMD 4G BC859C BC860B BC859
Text: , BC860C 220 800 VCE(sat) VBE(sat) Base-emitter saturation voltage *1 IC = -10 mA; IB = , Marking 4B 4C TYPE BC860B BC860C Marking 2 mV 4F 4G www.kexin.com.cn


Original
PDF BC859 BC860 OT-23 BC859 BC859B BC859C BC860B BC860C SMD TRANSISTOR MARKING 4c 4F smd transistor NF marking TRANSISTOR SMD 4f BC859 smd smd transistor 4b smd marking rs MARKING SMD 4G BC859C BC860B
Not Available

Abstract: No abstract text available
Text: , BC860C 220 800 VCE(sat) VBE(sat) Base-emitter saturation voltage *1 IC = -10 mA; IB = , Classification TYPE BC859B BC859C Marking 4B 4C TYPE BC860B BC860C Marking 4F


Original
PDF BC859 BC860 OT-23 BC859 E-850 BC859B BC859C BC860B BC860C
2F PNP SOT23

Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS marking codes SOT iSS marking c7 sot-23 SMD MARKING CODE 4E MARKING H7 SOT-23
Text: PMBT6429 PMBT6428 PNP BC859A BC859B BC859C BCF29 BCF30 BC860A BC860B BC860C BCF70 PMBT5086 PMBT5087 PACKAGE , BC860A BC860B BC860C BCF29 BCF30 Code 4C 4E 4F 4G C7 C8 TVpe No. BCF32 BCF33 BCF70 BCF81 PMBT5086


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PDF PMBT5089 BC849B BC849C PMBT5088 BCF32 BCF33 BC850B BC850C BCF81 PMBT6429 2F PNP SOT23 MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS marking codes SOT iSS marking c7 sot-23 SMD MARKING CODE 4E MARKING H7 SOT-23
smd code marking TV sot23

Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 BCF70 smd transistors sot-23 MARKING CODE N C marking p1r
Text: F F F F F F F F PNP BC859A BC859B BC859C BCF29 BCF30 BC860A BC860B BC860C BCF70 PMBT5086 , 2Gp 4Ap 4Bp Type No. BC859C BC860A BC860B BC860C BCF29 BCF30 Coda 4Cp 4Ep 4Fp 4Gp C7p C8p


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PDF OT-23 BC849B BC849C BC850B BC850C BC859A BC859B BC859C BC860A smd code marking TV sot23 SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 BCF70 smd transistors sot-23 MARKING CODE N C marking p1r
BCB60

Abstract: BC860 BC859A BC859B BC859C philips hq BC860A BC860B BC860C BCB59
Text: BC860B = 4Fp BC860C = 4Gp 1.U 2.5 1.2 max Pinning: 1 = base 2 = emitter 3 = collector —ffrl0.1(g , /DISCRETE b?E D' 500 hFE 400 BC859 BC860 BCB59C BC860C


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PDF bhS3n31 GE447là BC859 BC860 OT-23 BC859 bbS3T31 G024M63 BCB60 BC860 BC859A BC859B BC859C philips hq BC860A BC860B BC860C BCB59
FMMT415

Abstract: VHF Transistors BC856B BC857A BC857B BC856A BCW70 BCW89 FMMT3905 FMMT3906
Text: /5 0.25 10/0.5 300 BC860B 50 45 100 350 200/450 2/5 0.25 10/0.5 300 BC860C 50 45 100 350 420/800 2 , 350 125/250 2/5 3 0.2/5 300 BC860B 50 45 100 350 220/475 2/5 3 0.2/5 300 BC860C 50 45 100 350 420


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PDF OT-23 BC856A BC856B BCW89 FMMT3905 FMMT3906 FMMTA70 FMMT5087 BCW69 BCW70 FMMT415 VHF Transistors BC857A BC857B
transistor BC 339

Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Text: current gain DC current gain BC859; BC860 BC859A; B C 860A BC859B; BC860B BC859C ; BC860C VcEsat collecto , , BC860B B C 859C ; BC860C lE = ie = 0 , V CB = - 1 0 V , f = 1 MHz lc = ic = 0 ; V EB = -5 0 0 mV; f = , ; BC860B B C 859C ; BC860C lc = -2 0 0 \iA; V c e = - 5 V; Rs = 2 k ft; f = 1 kHz; B = 200 Hz - -


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PDF BC859; BC860 BC860 BC849 BC850. BC859 B0859A BC859B transistor BC 339 marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
BC859B 215

Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H BC856A BSX39 sot23 zc 4f MARKING 5H
Text: 420 800 2 250 BC860C 4G 45V 420 800 2 250 BCX71J BJ 45V 250 460 2 — BC808-40 5H 45V 250 630 100


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PDF OT-23 BC818-25 BC818-16 BCX20 MMBT4124 BCW32 BC856B BC856A MMBT2907A BC857C BC859B 215 motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H BSX39 sot23 zc 4f MARKING 5H
1994 - PC 8591 T SMD

Abstract: VOGT u3 503 10 SMD B4H VOGT 503 05 010 30 AD17 BC850C/A2 AD11 AD10 vogt transformer s3 vogt 543
Text: No file text available


Original
PDF BC850C BC860C PC 8591 T SMD VOGT u3 503 10 SMD B4H VOGT 503 05 010 30 AD17 BC850C/A2 AD11 AD10 vogt transformer s3 vogt 543
Not Available

Abstract: No abstract text available
Text: I t,S0113D 0040554 S^S Pro Electron Surface Mount Bipolar Devices Device No. (SOT-23 Mark) BC859C (4C) BC860C (4G) (c o n tin u e d ) Case Style VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 30 50 30 45 5 5 I * ' ces 'C B O V CB h fe v @ 'c (m A ) & V CE CE(SAT) & h fa BE(SAT) w . V BE(ON) @ (V ) V I C


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PDF S0113D OT-23 BC859C BC860C O-236 BCP52 BCP53 O-261
BCW60D

Abstract: BC860A
Text: SOT23 OTHER SM ALL SIG N A L DEVICES OFFERED (LISTING ONLY) GENERAL PURPOSE TRAN SISTO RS TYPE NPN BC846A BC846B BCV71 BCV72 FMMT2484 BC850B BC850C BC847A BC847B BC847C BCW71 BCW72 BCX70G BCX70H BCX70J BCX70K FMMTA20 BCW60A BCW60B BCW60C BCW60D BC848A BC848B BC848C BC849B BC849C BCW31 BCW32 BCW33 PNP BC856A BC856B BCW89 FMMTA70 BCW69 BCW70 BC857A BC857B BC857C BC860A BC860B BC860C BCX71G BCX71H BCX71J BCX71K BCW61A BCW61B BCW61C BCW61D BC858A BC858B BC858C BC859A BC859B BC859C BCW29 BCW30 VCBO V 80


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PDF BC846A BC846B BCV71 BCV72 FMMT2484 BC850B BC850C BC847A BC847B BC847C BCW60D BC860A
FMMT3905

Abstract: FMMT5087 FMMT3906 BCW89 BCW70 BCW69 BC857B BC857A BC856B BC856A
Text: /5 0.25 10/0.5 300 BC860B 50 45 100 350 200/450 2/5 0.25 10/0.5 300 BC860C 50 45 100 350 420/800 2


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PDF OT-23 BC856A BC856B BCW89 FMMT3905 FMMT3906 FMMTA70 FMMT5087 BCW69 BCW70 BC857B BC857A
1994 - Not Available

Abstract: No abstract text available
Text: No file text available


Original
PDF BC850C BC860C
SOT23

Abstract: BCX70G SOT23 SOT323 BCF33 BCF32 SOT-23 BC850CW BC850C transistor 1061 bcf81
Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100 BC860CW 328 BC850W SOT323 45 100 200 200 800 100 BC860W 328 BCF32 SOT23 32 100 250 200 450


Original
PDF BC850C BC860C BC850CW OT323 BC860CW BC850W BC860W BCF32 BCF29 SOT23 BCX70G SOT23 SOT323 BCF33 BCF32 SOT-23 BC850CW BC850C transistor 1061 bcf81
Not Available

Abstract: No abstract text available
Text: 25500mA 25- Part VCE P N P L.ow N o is e BC859C BC860A BC860B BC860C 2mA 2mA 2mA 2mA


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PDF 350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA
bcp55 to

Abstract: BCV27 BCV26 BCP56 BCP54 BCP53 BCP52 BC860C BC859C BCV72-K8
Text: 5 0.65 100 4 (Note 1) 68 BC860C (4G) TO-236 (49) 50 45 5 15 30 420 800 2 5 0.3 10 0.65 100 3


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PDF OT-23 BC859C O-236 BC860C BCP52 O-261 BCV26 BCV27 bcp55 to BCV27 BCV26 BCP56 BCP54 BCP53 BC860C BC859C BCV72-K8
AVALANCHE TRANSISTOR

Abstract: VHF Transistors bss65 FMMT415 FMMT5088 BC860C BC860B BC860A BC850C BC850B
Text: 350 125/250 2/5 3 0.2/5 300 BC860B 50 45 100 350 220/475 2/5 3 0.2/5 300 BC860C 50 45 100 350 420


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PDF OT-23 FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 BC860A AVALANCHE TRANSISTOR VHF Transistors bss65 FMMT415 BC860C BC860B
1994 - u3 503 10 010 00 vogt

Abstract: VOGT P7 vogt b9 PC 8591 T SMD vogt 503 02 010 00 L5026 L4096 trm a55 cia siemens AD14
Text: No file text available


Original
PDF BC850C BC860C u3 503 10 010 00 vogt VOGT P7 vogt b9 PC 8591 T SMD vogt 503 02 010 00 L5026 L4096 trm a55 cia siemens AD14
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