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BC860BE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC860CWH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
BC860BWH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
BC860CE6359HTMA1 Infineon Technologies AG TRANS PREBIAS PNP SOT23

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC 860B E6327 Infineon Technologies AG Rochester Electronics 30,000 $0.02 $0.02
BC 860CW H6327 Infineon Technologies AG Avnet 0 $0.02 $0.02
BC860A Philips Semiconductors Bristol Electronics 6,000 $0.11 $0.01
BC860B Diotec Semiconductor AG TME Electronic Components 5,000 $0.04 $0.01
BC860B,215 NXP Semiconductors Schukat electronic 10,500 €0.02 €0.01
BC860B,215 NEXPERIA RS Components 97,500 £0.02 £0.02
BC860B,215 Nexperia Avnet 0 $0.02 $0.01
BC860B,215 Nexperia Future Electronics 0 $0.03 $0.03
BC860B,215 Nexperia element14 Asia-Pacific 0 $0.02 $0.02
BC860B,215 Nexperia New Advantage Corporation 261,000 $0.05 $0.04
BC860B,235 Nexperia Avnet 0 $0.03 $0.03
BC860B215 NXP Semiconductors Rochester Electronics 147,210 $0.04 $0.03
BC860B235 NXP Semiconductors Rochester Electronics 100,000 $0.04 $0.03
BC860BE6327 Infineon Technologies AG TME Electronic Components 294 $0.03 $0.02
BC860BE6327 Infineon Technologies AG Rochester Electronics 86,985 $0.02 $0.02
BC860BE6327HTSA1 Infineon Technologies AG Avnet 0 $0.02 $0.01
BC860BE6327HTSA1 Infineon Technologies AG Rochester Electronics 210,000 $0.04 $0.03
BC860BMTF ON Semiconductor RS Components 8,800 £0.03 £0.02
BC860BMTF ON Semiconductor Avnet - -
BC860BMTF ON Semiconductor Farnell element14 2,704 £0.11 £0.03
BC860BMTF ON Semiconductor element14 Asia-Pacific 2,704 $0.16 $0.02
BC860BW Philips Semiconductors America II Electronics - -
BC860BW Siemens Chip One Exchange - -
BC860BW,115 Nexperia Farnell element14 235 £0.15 £0.04
BC860BW,115 Nexperia Future Electronics 0 $0.02 $0.02
BC860BW,115 Nexperia element14 Asia-Pacific 130 $0.13 $0.02
BC860BW,115 Nexperia Avnet 0 $0.03 $0.03
BC860BW,115 Nexperia Avnet 0 $0.02 $0.02
BC860BW,115 Nexperia Newark element14 130 $0.19 $0.04
BC860BW,135 Nexperia Avnet 0 $0.01 $0.01
BC860BW115 NXP Semiconductors Rochester Electronics 104,190 $0.04 $0.03
BC860BWE6327 Infineon Technologies AG Rochester Electronics 129,000 $0.02 $0.02
BC860BWH6327 Infineon Technologies AG Rochester Electronics 6,000 $0.02 $0.02
BC860BWH6327 Infineon Technologies AG TME Electronic Components 1,138 $0.03 $0.02
BC860BWH6327XTSA1 Infineon Technologies AG Avnet 0 $0.02 $0.02
BC860BWH6327XTSA1 Infineon Technologies AG Rochester Electronics 63,000 $0.02 $0.02
BC860BWH6327XTSA1 Infineon Technologies AG Chip1Stop 9,000 $0.07 $0.04
BC860BWH6327XTSA1 Infineon Technologies AG Chip1Stop 39,000 $0.12 $0.11
BC860C Nexperia element14 Asia-Pacific 10 $0.12 $0.02
BC860C Nexperia Farnell element14 0 £0.15 £0.04
BC860C Fairchild Semiconductor Corporation Bristol Electronics - -
BC860C Fairchild Semiconductor Corporation Rochester Electronics 15,000 $0.11 $0.09
BC860C Philips Semiconductors New Advantage Corporation - -
BC860C Philips Semiconductors ComS.I.T. - -
BC860C Diotec Semiconductor AG TME Electronic Components 110 $0.04 $0.02
BC860C Nexperia element14 Asia-Pacific 10 $0.12 $0.02
BC860C Philips Semiconductors Bristol Electronics - -
BC860C Fairchild Semiconductor Corporation America II Electronics - -
BC860C Philips Semiconductors Chip One Exchange - -
BC860C,215 Nexperia element14 Asia-Pacific 0 $0.02 $0.02
BC860C,215 Nexperia Avnet 0 $0.02 $0.01
BC860C,215 Nexperia Avnet - -
BC860C,215 NEXPERIA RS Components 3,000 £0.03 £0.02
BC860C,215 Nexperia Future Electronics 0 $0.02 $0.02
BC860C,215 Nexperia Future Electronics 0 $0.03 $0.02
BC860C,215 Nexperia Chip1Stop 501 $0.06 $0.03
BC860C,235 Nexperia Avnet 0 $0.02 $0.01
BC860C,235 Nexperia Future Electronics 10,000 $0.03 $0.03
BC860C,235 Nexperia New Advantage Corporation 20,000 $0.06 $0.05
BC860C215 NXP Semiconductors Rochester Electronics 24,000 $0.04 $0.03
BC860CW NXP Semiconductors America II Electronics - -
BC860CW NEXPERIA RS Components 240,000 £0.03 £0.01
BC860CW NXP Semiconductors ComS.I.T. - -
BC860CW NEXPERIA RS Components 600 £0.02 £0.01
BC860CW,115 Nexperia element14 Asia-Pacific 0 $0.13 $0.02
BC860CW,115 Nexperia element14 Asia-Pacific 0 $0.13 $0.02
BC860CW,115 Nexperia New Advantage Corporation 474,000 $0.03 $0.03
BC860CW,115 Nexperia Avnet 0 $0.08 $0.02
BC860CW,115 Nexperia Avnet 39,000 $0.02 $0.02
BC860CW,115 Nexperia element14 Asia-Pacific 0 $0.02 $0.02
BC860CW,135 Nexperia Avnet 0 $0.01 $0.01
BC860CWE6327 Infineon Technologies AG Rochester Electronics 122,900 $0.02 $0.02
BC860CWH6327 Infineon Technologies AG Rochester Electronics 51,000 $0.02 $0.02
BC860CWH6327 Infineon Technologies AG TME Electronic Components 5,770 $0.03 $0.02
BC860CWH6327XTSA1 Infineon Technologies AG Rochester Electronics 282,000 $0.04 $0.03
SBC8600B WITH 4.3"LCD Embest Info&Tech Co Ltd Farnell element14 1 £146.00 £146.00
SBC8600B WITH 4.3"LCD Embest Info&Tech Co Ltd element14 Asia-Pacific 2 $314.84 $314.84
SBC8600B WITH 7"LCD Embest Info&Tech Co Ltd Farnell element14 24 £136.00 £136.00

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BC860 datasheet (152)

Part Manufacturer Description Type PDF
BC860 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC860 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC860 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC860 Infineon Technologies NPN Silicon AF Transistors Original PDF
BC860 Kexin PNP General Purpose Transistor Original PDF
BC860 Korea Electronics General Purpose Transistor Original PDF
BC860 Philips Semiconductors PNP general purpose transistors Original PDF
BC860 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BC860 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BC860 Rectron Semiconductor PNP Transistor Original PDF
BC860 Siemens Cross Reference Guide 1998 Original PDF
BC860 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BC860 Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF
BC860 TY Semiconductor PNP General Purpose Transistor - SOT-23 Original PDF
BC860 Zetex Semiconductors SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS Original PDF
BC860 Zetex Semiconductors SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS Original PDF
BC860 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BC860 Continental Device India Silicon Planar Epitaxial Transistor Scan PDF
BC860 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
BC860 Korea Electronics General Purpose Transistor Scan PDF
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BC860 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - BC857CMTF

Abstract:
Text: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features · Switching and Amplifier , , BC860 · Complement to BC846 . BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute , = -200µA RG=2K, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor , -23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT-23 Tape & Reel


Original
PDF BC856- BC860 BC859, BC846 BC850 OT-23 BC856 BC857/860 BC858/859 BC857CMTF PNP Epitaxial Silicon Transistor sot-23 BC857BMTF BC857AMTF bc856bmtf BC859BMTF marking 25 SOT-23 ref IC BC860 BC850 9aa marking
BC860

Abstract:
Text: ITT SEMICON»/ INTERHETALL 5ÜE J> m Mbö5711 0D02.5T4 b^O «ISI T-2PI-I5 BC856 . . . BC860 , , the types BC857, BC858, BC859 and BC860 can be supplied in all three groups. The BC859 is a low noise type and the BC860 a extremely low noise type. As complementary types the NPN transistors BC846 . . . , 3K C 3L Type Marking BC859A 4 A B 4B C 4C BC860A 4E B 4 F C 4G Absolute Maximum Ratings Symbol Value Unit Collector Base Voltage BC856 —VcBO 80 V BC857, BC860 —VcBO 50 V BC858, BC859


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PDF BC856 BC860 BC856 BC857, BC858, BC859 BC860 BC846 Q002 BC860 equivalent BC858 BC857 BC856AR BC856A BC850
2009 - BC860C

Abstract:
Text: package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , V; see Figs 2 and 3 220 - 475 420 - 800 BC859B; BC860B BC859C; BC860C , - 4 dB BC859B; BC860B ; BC859C; BC860C noise figure BC859B; BC860B ; BC859C; BC860C , ; BC860B. Fig.2 DC current gain; typical values. MBH728 600 handbook, full pagewidth hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C; BC860C.


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
1997 - BC860

Abstract:
Text: TYPE NUMBER 2 MARKING CODE BC859 4Dp BC860 4Ap BC860A 4Bp BC860B 4Fp , - - 4 dB BC859A; BC860A BC859B; BC860B BC859C; BC860C F noise figure BC859A; BC860A IC = -200 µA; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz BC859B; BC860B BC859C; BC860C , -5 V; see Figs 2, 3 and 4 125 - 250 BC859B; BC860B 220 - 475 BC859C; BC860C , hFE 200 VCE = -5 V 100 0 -10-1 -1 -102 -10 IC (mA) -103 BC859A; BC860A.


Original
PDF M3D088 BC859; BC860 BC849 BC850. SCA54 117047/00/02/pp12 BC860 BC860C BC859B 215 BC859A BC859 BC850 BC859B BC859C 4cp 44
Not Available

Abstract:
Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE , BC860 50 45 200 250 150 125 900 100 100 1,2 4 4 1 3 4 V V mA mW °C MHz dB dB dB BC859 BC860 RATINGS (at T a = 25°C unless otherwise specified) Limiting values , max. max. max. max. max. max. max. max. max. max. BC859 30 30 30 5 BC860 50 V 50


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PDF BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C
2001 - BC859 smd

Abstract:
Text: -23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G , > 100 100 MHz F typ. < < 1,2 4 4 1 3 4 dB dB dB F Data Sheet BC860 max. max. max. max. max. > < Page 1 of 3 BC859 BC860 RATINGS (at TA = 25°C unless , . max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250


Original
PDF OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC859 smd BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C
BCB60

Abstract:
Text: |B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 = 4Hp BC860A = 4Ep BC860B = 4Fp BC860C = 4Gp 1.U 2.5 1.2 max Pinning: 1 = base 2 = emitter 3 = collector —ffrl0.1(g , /DISCRETE b?E D' 500 hFE 400 BC859 BC860 BCB59C BC860C , ■bhS3n31 □ GE447lì 755 BIAPX N AUER PHILIPS/DISCRETE b?E J> BC859 BC860 SILICON PLANAR , hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ Vgg = 1 V) ~VCEX


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PDF bhS3n31 GE447là BC859 BC860 OT-23 BC859 bbS3T31 G024M63 BCB60 BC860 BCB59C BCB59 BC860C BC860B BC860A BC859C BC859B BC859A
4gp transistor

Abstract:
Text: < Dimensions in mm MHz Marking code: Fig. 1 SOT-23. BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C 0.150 = 4Dp = 4Ap = 4Bp = 4Cp = 4Hp = 4Ep = 4Fp = 4Gp Pinning: 1 = base , ■bbsanai o q e h m ?^ ? s s « a p x N ANER PHILIPS/DISCRETE BC859 BC860 b?E V y , equipment in thick and thin-film hybrid circuits. QUICK REFERENCE DATA BC859 BC860 30 50 V V , BC860 N AMER PHILIPS/DISCRETE - A b7E


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PDF BC859 BC860 OT-23 QQ24463 4gp transistor
33E marking

Abstract:
Text: 1.9 0.95 max 0AB -0.1 0.2©1A|B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 = 4Hp BC860A = 4Ep BC860B = 4Fp BC860C = 4Gp 1.4 2.5 1.2 max Pinning: 1 = base 2 = emitter 3 = , 711GÖ2b 00bfi445 33e! HPHIN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in , BC859 BC860 Collector-emitter voltage (+ Vre = 1 v) ~VCEX max. 30 50 V Collector-emitter voltage (open , Copyrighted By Philips Semiconductors. ■7110fl2b BC859 BC860 OObflMMt. 275 ■PHIN JL RATINGS Limiting


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PDF 00bfi445 BC859 BC860 OT-23 BC860 33E marking BC860C BC860B BC860A BC859C BC859B BC859A marking TN4
1997 - BC857

Abstract:
Text: BC859CZ4C BC859 BC849 BC857C3G BC860AZ4E BC860 BC850 BC858A3J BC860B4F BC858B3K E C BC860C4GZ B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC856 BC857 , SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL , and Storage Temperature Range BC858 BC859 BC860 -30 -30 -30 -30 -30 -30 -5 -100 , . VBE(sat) Typ BC856 BC857 BC858 BC859 BC860 -15 -4 -75 -75 -300 -300 VBE Min Typ Max


Original
PDF BC856 BC858 BC860 BC856A3A BC857 BC859 BC858C3L BC846 BC856BZ3B BC857 spice bc847 BC858A bc858 BC857C BC857B3 BC857B BC857A BC856B BC856A
transistor BC 339

Abstract:
Text: current gain DC current gain BC859; BC860 BC859A; B C 860A BC859B; BC860B BC859C ; BC860C VcEsat collecto , NUMBER BC860 B C 860A BC860B B08600 MARKING CODE 4H p 4E p 4Fp 4G p QUICK REFERENCE DATA SYMBOL , , BC860B B C 859C ; BC860C lE = ie = 0 , V CB = - 1 0 V , f = 1 MHz lc = ic = 0 ; V EB = -5 0 0 mV; f = , ; BC860B B C 859C ; BC860C lc = -2 0 0 \iA; V c e = - 5 V; Rs = 2 k ft; f = 1 kHz; B = 200 Hz - - , DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification


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PDF BC859; BC860 BC860 BC849 BC850. BC859 B0859A BC859B transistor BC 339 marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 l43 transistor marking 4d npn SOT23 NPN marking 4d
BC860C

Abstract:
Text: ) BC859B 4B* BC860B 4F* BC859C 4C* BC860C 2 - 2 1 4G* Top V ie w , ; lB = - 5 mA; note 1 VcEsat BC859B; BC860B ; BC859C; BC860C noise figure BC859B; BC860B , Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860 , BC859 -3 0 V BC860 - -5 0 V BC859 - -3 0 V BC860 VcEO - - , Philips S em iconductors P roduct specification PNP general purpose transistors BC859; BC860


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PDF BC859; BC860 BC849 BC850. BC859B BC860B BC859C BC860C MAM256 BC860C
2006 - MV TRANSISTOR SOT23

Abstract:
Text: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features • Switching and Amplifier , : BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3 , = -200µA RG=2KΩ, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , Corporation BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon , .Collector BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT


Original
PDF BC856- BC860 BC859, BC846 BC850 OT-23 BC856 BC857/860 BC858/859 MV TRANSISTOR SOT23
BC857A

Abstract:
Text: BC859B-4B BC859C-Z4C BC860A-Z4E BC860B-4F BC860C-4GZ C O M PLEM EN TAR Y TYPES BC856 BC857 BC858 BC859 BC860 BC846 BC847 BC848 BC849 BC850 BC856 BC858 BC860 BC857 BC859 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L V CBO V CES V CEO V EBO 'c 'e m 'b m 'em BC856 BC857 BC858 BC859 BC860 Collector-Base , BC856 BC857 BC858 -15 BC859 BC860 Max Max UNIT CONDITIONS. nA V c b =-30V (iA -4 , through the operating point lc = 11mA, VCE= 1V at constant base current. BC856 BC858 BC860 PARAMETER


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PDF BC856A-3A BC856B-Z3B BC857A-Z3E BC857B-3F BC857C-3G BC858A-3J BC858B-3K BC858C-3L BC859A-Z4A BC859B-4B BC857A
Not Available

Abstract:
Text: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 , r V o lta g e BC856 BC857 BC858 B C 8 5 9 BC860 UNIT v CBO -8 0 -5 0 -3 0 -3 0 , urrent 'cBO BC856 BC857 BC858 BC859 BC860 UNIT V BE -1 5 -4 -1 5 -4 -1 5 -4 mA , 0 0 0 6 1 ^ 7 732 ■DS23 CHARACTERISTICS (cont.) N BC856 BC857 BC858 BC859 BC860 , hoe D G D a n fl BC856 BC858 BC860 BC857 BC859 CHARACTERISTICS (at Tamb = 2 5 ° C


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PDF BC856 BC858 BC860 BC857 BC859 BC856 BC857 BC858
1995 - bc860

Abstract:
Text: BC857/BC858 BC859/ BC860 SMALL SIGNAL PNP TRANSISTORS Type Marking BC857A 3E BC857B 3F BC858A 4E BC860B s 4B BC860A s 4A BC859B s 3K BC859A s , MAXIMUM RATINGS Symbol Parameter Value Uni t BC857/ BC860 V CES Collector-Emitter Voltage , /BC859/ BC860 THERMAL DATA R t hj-amb · R th j-SR · Thermal Resistance Junction-Ambient Thermal , Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA for BC857/ BC860 for BC858/BC859 -50 -30 V


Original
PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC860B BC860A BC859B BC859A BC858B bc860 bc858 BC857 tbc857 BC859B BC859A BC858B BC858A BC857B BC857A
bc860

Abstract:
Text: . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications , however, the types BC857, BC858, BC859 and BC860 can be supplied in all three groups. The BC859 is a low noise type and the BC860 a extremely low noise type. As complementary types the NPN transistors BC846 . , 3A 3B 3E 3F 3G 3J 3K 3L Marking code Type BC859A B C BC860A B C Marking 4A 4B 4C 4E 4F 4G Absolute Maximum Ratings Symbol Collector Base Voltage BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860


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PDF BC856 BC860 BC856 BC857, BC858, BC859 BC860 BC846 marking 4A MARKING CODE 3J
Not Available

Abstract:
Text: r r z SGS-THOM SON Ä T f M lioe m s e îli» !» BC857/BC858 BC859/ BC860 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B BC859A BC859B BC860A BC860B M arking 3E 3F 3J 3K 4A 4B 4E 4F , ebo Parameter BC857/ BC860 Collector-Emitter Voltage ( V b e = 0) Collector-Base Voltage (Ie = 0 , 7 ^2^ 237 D77c H l4 ETD BC857/BC858/BC859/ BC860 THERMAL DATA Rthj-amb · Rthj-SR · Thermal , = -30 V VCE = -30 V Tamb = 150 °C V(BR)CES* lc = -10 H-A fo r BC857/ BC860 fo r BC858


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PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC858B BC859A BC859B BC860A BC860B
2004 - BC860C

Abstract:
Text: package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 Philips , ; BC860B BC859C; BC860C collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - -75 , ; B = 200 Hz - - 4 dB BC859B; BC860B ; BC859C; BC860C noise figure BC859B; BC860B , (mA) -103 BC859B; BC860B. Fig.2 DC current gain; typical values. MBH728 600 handbook , BC859C; BC860C. Fig.3 DC current gain; typical values. 2004 Jan 16 5 -102 IC (mA) -103


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C SCA76 BC860C BC860 BC850 BC859 BC859B BC859C BC860B
4gp transistor

Abstract:
Text: NUMBER BC859 BC859A BC859B BC859C MARKING CODE 4Dp 4Ap 4Bp 4Cp TYPE NUMBER BC860 BC860A BC860B , current gain DC current gain BC859A; BC860A BC859B: BC860B BC859C; BC860C CONDITIONS |E = 0; VCB = -3 , Hz - - 4 F noise figure BC859A; BC860A BC859B; BC860B BC859C; BC860C 10 4 . . dB , specification PNP general purpose transistors BC859; BC860 BC859A; BC860A. Fig.2 DC current gain , ; BC860 BC85SC; BC860C. Fig.4 DC current gain; typical values. 1997 May 26 353


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PDF BC859; BC860 BC849 BC850. BC859 BC859A BC859B BC859C BC860 BC860A 4gp transistor BC860C marking 4Gp PHILIPS marking Code 5C
Not Available

Abstract:
Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = , RATINGS BC859 BC860 Collector-emitter voltage (+V be = 1 V) Collector-emitter voltage (open base , BC860 RA TIN G S (at T a = 25°C unless otherwise specified) Limiting values Collector-base voltage , . max. max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250 mW -55 to


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PDF BC859 BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C
2009 - BC860C

Abstract:
Text: package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , ˆ’ 475 420 − 800 BC859B; BC860B BC859C; BC860C collector-emitter saturation voltage , ; BC860C noise figure BC859B; BC860B ; BC859C; BC860C Notes 1. VBEsat decreases by about −1.7 mV/K , ˆ’10−2 −10−1 −1 −10 −102 IC (mA) −103 BC859B; BC860B. Fig.2 DC current , 300 200 100 0 −10−2 −10−1 −1 −10 BC859C; BC860C. Fig.3 DC current


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C
BC859R

Abstract:
Text: N AMER PHILIPS/DISCRETE Db EJ> ^53^31 D01SSMS 7 BC859 BC860 T"-a S1LICON PLANAR EPITAXIAL , hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ Vßg = 1 V) -vcex , ,7 mm. a -Vbe decreases by about 2 mV/K with increasing temperature. BC859 BC860 30 50 V 30 50 V , selections *T Ne hFE hFE hFE hFE L BC859 BC860 -/ 5 -VCEsat typ. < 75 300 mV mV -VßEsat typ. 700 mV , to 250 220 to 475 420 to 800 MHz BC859 BC860 typ. 1,2 1 dB F < 4 3 dB typ. 1 1 dB F < 4 4


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PDF D01SSMS BC859 BC860 OT-23 BC859; BC860; 7z66676 ttS3T31 BC859R 7Z66 BC860 BCB60 BC860AR silicon planar epitaxial transistors
BC859

Abstract:
Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 , –¡745 BC859 BC860 -VCEX max. 30 50 V -VCEO max. 30 45 V -ICM max. 200 200 mA Ptot max. 250 250 mW Ti max , This Material Copyrighted By Its Respective Manufacturer BC859 BC860 RATINGS (at Ta = 25°C unless , dissipation up to Tamb = 60 °C* P(0t max. Storage temperature Tstg Junction temperature Tj max. BC860 30


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PDF BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
BC859

Abstract:
Text: 4.0 dB Note : hFE Classification A: 125-250, B:220~475 MARK SPEC TYPE BC859A BC859B BC860A BC860B , =25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC859 VcBO -30 V BC860 -50 Collector-Emitter Voltage BC859 VcEO -30 V BC860 -45 Emitter-Base Voltage Vebo -5 V Collector Current Ic -100 mA , . UNIT Collector-Emitter Breakdown Voltage BC859 V(BR)CEO Ic—10mA, Ib-0 -30 - - V BC860 -45 - - Collector-Base Breakdown Voltage BC859 V(BR)CBO Ic= IOjuA, IE=0 -30 - - V BC860 -50 - - Emitter-Base


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PDF BC859/860 BC849/850 BC859 BC860 10x8x0 BC859A BC859B BC860A BC860 BC860B
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