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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
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BC860 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - bc857b infineon

Abstract: marking 3Fs
Text: = 0.2 mA, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, BC860 Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 . 50 Hz , BC860 Vn 0.11 µV F 1 4 dB Ceb 9 Ccb 2 pF fT 250 MHz Symbol min


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PDF BC857. BC860. B500x BC847, BC850 BC857B BC857C BC860C bc857b infineon marking 3Fs
2001 - BC859 smd

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Text: -23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G , > 100 100 MHz F typ. < < 1,2 4 4 1 3 4 dB dB dB F Data Sheet BC860 max. max. max. max. max. > < Page 1 of 3 BC859 BC860 RATINGS (at TA = 25°C unless , . max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250


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PDF OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC859 smd BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
1995 - bc860

Abstract: bc858 BC857 BC858A BC858B BC857B BC859B BC860A BC860B 374C
Text: BC857/BC858 BC859/ BC860 SMALL SIGNAL PNP TRANSISTORS Type Marking BC857A 3E BC857B , MAXIMUM RATINGS Symbol Parameter Value Uni t BC857/ BC860 V CES Collector-Emitter Voltage , /BC859/ BC860 THERMAL DATA R t hj-amb · R th j-SR · Thermal Resistance Junction-Ambient Thermal , Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA for BC857/ BC860 for BC858/BC859 -50 -30 V V V ( BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA for BC857/ BC860 for


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PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC860B BC860A BC859B BC859A BC858B bc860 bc858 BC857 BC858A BC858B BC857B BC859B BC860A BC860B 374C
BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Text: SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G , > 100 100 MHz F typ. < < 1,2 4 4 1 3 4 dB dB dB F Data Sheet BC860 max. max. max. max. max. > < Page 1 of 3 BC859 BC860 RATINGS (at TA = 25°C unless , . max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250


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PDF ISO/TS16949 OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C
2006 - BC857CMTF

Abstract: PNP Epitaxial Silicon Transistor sot-23 BC857BMTF BC857AMTF BC859BMTF bc856bmtf BC860 marking 25 SOT-23 ref IC BC856 BC850
Text: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features · Switching and Amplifier , , BC860 · Complement to BC846 . BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute , = -200µA RG=2K, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor , "-TF" means the tape & reel type packing. 2 BC856- BC860 Rev. B www.fairchildsemi.com BC856


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PDF BC856- BC860 BC859, BC846 BC850 OT-23 BC856 BC857/860 BC858/859 BC857CMTF PNP Epitaxial Silicon Transistor sot-23 BC857BMTF BC857AMTF BC859BMTF bc856bmtf BC860 marking 25 SOT-23 ref IC BC856 BC850
2009 - BC860C

Abstract: BC849 BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
Text: DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product , PNP general purpose transistors BC859; BC860 FEATURES PINNING · Low current (max. 100 mA , Product data sheet PNP general purpose transistors BC859; BC860 LIMITING VALUES In accordance , BC860 - -45 V BC859 BC860 VCEO collector-emitter voltage open base VEBO , BC859; BC860 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL collector cut-off


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PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
2007 - top marking 1B sot23

Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING 3Fs marking transistor 3Fs sot23 MARKING 3gs marking 3Ls SOT23 3ks
Text: , BC859, BC850 Equivalent noise voltage IC = 200 mA, V CE = 5 V, R S = 2 k, f = 10.50 Hz, BC860 Vn 0.11 , . Maximum Ratings Parameter Collector-emitter voltage BC856. BC857., BC860 . BC858., BC859. Collector-base voltage BC856. BC857., BC860 . BC858., BC859. Emitter-base voltage Collector current Peak , , BC857., BC860 . IC = 10 mA, IB = 0 , BC858., BC859. 65 45 30 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC856. IC = 10 µA, IE = 0 , BC857., BC860 . IC = 10


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PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A top marking 1B sot23 marking 3bs 3bs marking code BC856-BC860 3BS MARKING 3Fs marking transistor 3Fs sot23 MARKING 3gs marking 3Ls SOT23 3ks
1997 - BC860

Abstract: BC859B 215 BC860C BC859A BC860B BC860A BC859C BC859B BC859 BC850
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC859; BC860 PNP general , transistors BC859; BC860 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , TYPE NUMBER 2 MARKING CODE BC859 4Dp BC860 4Ap BC860A 4Bp BC860B 4Fp , BC859 - -30 V BC860 VCEO - BC860 - -45 V - -200 mA - 250 , Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860


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PDF M3D088 BC859; BC860 BC849 BC850. SCA54 117047/00/02/pp12 BC860 BC859B 215 BC860C BC859A BC860B BC860A BC859C BC859B BC859 BC850
transistor BC 339

Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Text: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification , FEATURES · Low current (m ax. 100 mA) * Low v oltage (m ax. 45 V). BC859; BC860 PINNING PIN 1 2 base , NUMBER BC860 B C 860A BC860B B08600 MARKING CODE 4H p 4E p 4Fp 4G p QUICK REFERENCE DATA SYMBOL VcBO PARAMETER co Ilector-base voltage BC859 BC860 open em itter CONDITIONS MIN. MAX. UNIT - -3 0 -5 0 V V V cEO co lle cto r-e m itte r vo lta g e BC859 BC860 open base


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PDF BC859; BC860 BC860 BC849 BC850. BC859 B0859A BC859B transistor BC 339 marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
2007 - MARKING 3FS

Abstract: marking 3bs BC857B BC857A BC857 3fs BC856BW BC856B BC856A BC856 BC850
Text: ., BC860 . 45 BC858., BC859. 30 Collector-base voltage VCBO BC856. 80 BC857., BC860 . 50 BC858., BC859. 30 5 Emitter-base voltage VEBO Collector current IC , . 30 - - IC = 10 µA, IE = 0 , BC856. 80 - - IC = 10 µA, IE = 0 , BC857., BC860 , 10 mA, IB = 0 , BC857., BC860 . Unit - Collector-base breakdown voltage V(BR)CBO , , VCE = 5 V, f = 1 kHz, D f = 200 Hz, RS = 2 k, BC859, BC850 Equivalent noise voltage IC = 200 mA


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PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 MARKING 3FS marking 3bs BC857B BC857A BC857 3fs BC856BW BC856B BC856A BC856 BC850
2006 - MV TRANSISTOR SOT23

Abstract: No abstract text available
Text: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features • Switching and Amplifier , : BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3 , = -200µA RG=2KΩ, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , Corporation BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon , matte type package. Affix “-TF” means the tape & reel type packing. 2 BC856- BC860 Rev. B


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PDF BC856- BC860 BC859, BC846 BC850 OT-23 BC856 BC857/860 BC858/859 MV TRANSISTOR SOT23
2004 - BC860C

Abstract: BC860 BC849 BC850 BC859 BC859B BC859C BC860B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product , PNP general purpose transistors BC859; BC860 FEATURES PINNING · Low current (max. 100 mA , Semiconductors Product specification PNP general purpose transistors BC859; BC860 LIMITING VALUES In , - -30 V BC860 - -45 V BC859 BC860 VCEO collector-emitter voltage open , general purpose transistors BC859; BC860 CHARACTERISTICS Tj = 25 °C unless otherwise specified


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PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C SCA76 BC860C BC860 BC850 BC859 BC859B BC859C BC860B
2009 - BC860C

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BC859; BC860 PNP general purpose transistors Product data sheet , purpose transistors BC859; BC860 FEATURES PINNING • Low current (max. 100 mA) PIN â , Product data sheet PNP general purpose transistors BC859; BC860 LIMITING VALUES In accordance , ˆ’ −30 V BC860 − −45 V BC859 BC860 VCEO collector-emitter voltage open , sheet PNP general purpose transistors BC859; BC860 CHARACTERISTICS Tj = 25 °C unless


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PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C
2009 - top marking 1B sot23

Abstract: BC857 3fs TSLP3 1B marking transistor
Text: BC857.-BC860. Maximum Ratings Parameter Collector-emitter voltage BC857., BC860 . BC858., BC859. Collector-base voltage BC857., BC860 . BC858., BC859. Emitter-base voltage Collector current Peak , 10 mA, IB = 0 , BC857., BC860 . IC = 10 mA, IB = 0 , BC858., BC859. Unit V 45 30 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC857., BC860 . IC = , 0.2 mA, VCE = 5 V, f = 1 kHz, F - f = 200 Hz, RS = 2 k, BC859, BC850 Equivalent noise


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PDF BC857. -BC860. BC847. -BC850. Q1011) 1BC857BL3 BC857A BC857B BC857BL3* BC857BW top marking 1B sot23 BC857 3fs TSLP3 1B marking transistor
2007 - marking code MS SOT323

Abstract: BC857B BC857A BC856BW BC856B BC856A BC856 BC850 BC846 BC860
Text: Collector-emitter voltage Value VCEO Unit V BC856. 65 BC857., BC860 . 45 BC858., BC859. 30 Collector-base voltage VCBO BC856. 80 BC857., BC860 . 50 BC858 , , IB = 0 , BC856. 65 - - IC = 10 mA, IB = 0 , BC857., BC860 . 45 - - IC = , IC = 10 µA, IE = 0 , BC857., BC860 . 50 - - IC = 10 µA, IE = 0 , BC858., BC859 , Noise figure IC = 0.2 mA, VCE = 5 V, f = 1 kHz, D f = 200 Hz, RS = 2 k, BC859, BC850 Equivalent


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PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC857B BC857A BC856BW BC856B BC856A BC856 BC850 BC846 BC860
transistors

Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor bc337 hie BC547 equivalent bc327 equivalent bc338 equivalent BC547 sot23
Text: / C BC860 A / B / C BC327 -16 / -25 / -40 BC328 -16 / -25 / -40 BC337 -16 / -25 / -40 BC338 -16 , A / B BC857 A / B / C BC858 A / B / C BC859 A / B / C BC860 A / B / C BC846 A / B BC847 A / B , niedrig hoch niedrig LF Four Pole Equivalent Circuit NF Vierpol-Ersatzschaltbild Low frequency , offenem Eingang (i1=0) www.diotec.com 2/4 03/2002 Application Applikation Equivalent , Signalgenerators Equivalent Noise voltage uF Äquivalente Rauschspannung www.diotec.com 4/4 03


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PDF BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC856 transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor bc337 hie BC547 equivalent bc327 equivalent bc338 equivalent BC547 sot23
2011 - marking 3G pnp

Abstract: No abstract text available
Text: BC856 . BC860 BC856 . BC860 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2011-07-11 Power , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 , , Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC856 . BC860 , - VCE = 5 V, - IC = 200 µA RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz BC856 . BC858 BC859 . BC860


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PDF BC856 BC860 OT-23 O-236) UL94V-0 BC857 marking 3G pnp
1999 - BC859B 215

Abstract: BC860C
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC859; BC860 PNP general , Semiconductors Product specification PNP general purpose transistors BC859; BC860 FEATURES PINNING , BC860 - -50 V BC859 - -30 V BC860 VCEO - - -45 V - -5 V , transistors BC859; BC860 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal , specification PNP general purpose transistors BC859; BC860 MBH727 400 handbook, full pagewidth


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PDF M3D088 BC859; BC860 BC849 BC850. BC859B BC860B 115002/04/pp8 BC859B 215 BC860C
2007 - marking 3ks

Abstract: transistor packing code 3f marking 3GS BC856A BC856 BC850 BC846 BC857AW BC857A BC856BW
Text: Symbol Collector-emitter voltage VCEO Value Unit V BC856. 65 BC857., BC860 . 45 BC858., BC859. 30 Collector-base voltage VCBO BC856. 80 BC857., BC860 , , BC856. 65 - - IC = 10 mA, IB = 0 , BC857., BC860 . 45 - - IC = 10 mA, IB = , µA, IE = 0 , BC857., BC860 . 50 - - IC = 10 µA, IE = 0 , BC858., BC859. 30 - , Noise figure IC = 0.2 mA, VCE = 5 V, f = 1 kHz, D f = 200 Hz, RS = 2 k, BC859, BC850 Equivalent


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PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OD323 marking 3ks transistor packing code 3f marking 3GS BC856A BC856 BC850 BC846 BC857AW BC857A BC856BW
2006 - MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Text: BC856.-BC860. Maximum Ratings Parameter Collector-emitter voltage BC856. BC857., BC860 . BC858., BC859. Collector-base voltage BC856. BC857., BC860 . BC858., BC859. Emitter-base voltage , Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC856. IC = 10 mA, IB = 0 , BC857., BC860 , breakdown voltage IC = 10 µA, IE = 0 , BC856. IC = 10 µA, IE = 0 , BC857., BC860 . IC = 10 µA, IE = 0 , Hz, RS = 2 k, BC859, BC850 - Equivalent noise voltage IC = 200 mA, V CE = 5 V, R S = 2 k, f =


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PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks
2008 - Marking Stempelung Diode

Abstract: BC846 BC850 BC856 BC856A BC857 BC858 BC859 BC860
Text: BC856 . BC860 BC856 . BC860 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2008-04-15 Power , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 , % © Diotec Semiconductor AG http://www.diotec.com/ 1 BC856 . BC860 Characteristics (Tj = 25 , . BC858 BC859 . BC860 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht


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PDF BC856 BC860 OT-23 O-236) UL94V-0 BC857 Marking Stempelung Diode BC846 BC850 BC856 BC856A BC857 BC858 BC859 BC860
2001 - pnp transistor A1 sot-23

Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC 16 TRANSISTOR sot-23 mark code 14 SOT-23 FAIRCHILD SOT-23 MARK PC 3B SOT23-3 transistor top mark 3f
Text: for automatic insertion in thick and thin-film circuits · Low Noise: BC859, BC860 · Complement to , Output Capacitance Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 Test Condition VCB= -30V, IE , Low Noise: BC859, BC860 Print version Dotted line Product selection and q Complement to BC846.BC850 , This page Quality and reliability New products q Low Noise: BC859, BC860 Print version Dotted line , Low Noise: BC859, BC860 Print version Dotted line Product selection and q Complement to BC846.BC850


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 pnp transistor A1 sot-23 FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC 16 TRANSISTOR sot-23 mark code 14 SOT-23 FAIRCHILD SOT-23 MARK PC 3B SOT23-3 transistor top mark 3f
2011 - Not Available

Abstract: No abstract text available
Text: BC856 . BC860 BC856 . BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation ­ Verlustleistung 2.9 ±0.1 0.4 , BC857 BC860 45 V 50 V 5V 250 mW 1) 100 mA 200 mA -55.+150°C -55.+150°C BC858 BC859 30 V 30 V , 1 BC856 . BC860 Characteristics (Tj = 25°C) Min. Base-Emitter-voltage ­ Basis-Emitter-Spannung , 5 V, - IC = 200 µA RG = 2 k, f = 1 kHz, f = 200 Hz BC856 . BC858 BC859 . BC860 F F RthA ­ ­ 2 dB


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PDF BC856 BC860 BC860 OT-23 O-236) UL94V-0 BC856 BC857
1999 - 856B

Abstract: BC846 BC850 BC856 BC859 BC860 9aa marking TRANSISTOR 9BB
Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 · Suitable for automatic insertion in thick and thin-film circuits · LOW NOISE: BC859, BC860 · Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Rating Unit -80 -50 -30 V V V -65 -45 -30 -5 -100 310 150 -65 ~ 150 V , /857/858 : BC859/860 : BC859 : BC860 CCBO NF VCB= -30V, IE=0 VCE= -5V, IC= -2mA IC= -10mA


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PDF BC856/857/858/859/860 OT-23 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859 856B BC846 BC850 BC856 BC859 BC860 9aa marking TRANSISTOR 9BB
fe marking code

Abstract: No abstract text available
Text: BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS · S uitable fo r auto m atic insertion in th ick and thin-film circuits · LOW NOISE: BC859, BC860 · C om plem ent to BC846 . BC850 PNP EPITAXIAL SILICON TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage : BC856 : BC857/860 : BC858/859 C ollector-E m ltter Voltage : BC856 : BC857/860 : BC858 , /860 : BC859 : BC860 NF Sym bol IcBO h FE Test C onditions V cb= -30 V, Ie=0 Vce= -5V, lc = -2m A


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859 fe marking code
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