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BC859CE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC859-C Infineon Technologies AG Rochester Electronics 26,800 $0.02 $0.02
BC859C NXP Semiconductors Chip One Exchange 970 - -
BC859C Nexperia element14 Asia-Pacific 24,615 $0.12 $0.02
BC859C NXP Semiconductors Bristol Electronics 2,864 - -
BC859C Nexperia Newark element14 23,915 $0.18 $0.03
BC859C Nexperia Farnell element14 27,037 £0.21 £0.06
BC859C Nexperia element14 Asia-Pacific 24,615 $0.12 $0.02
BC859C,215 Nexperia Chip1Stop 31,695 $0.06 $0.02
BC859C,215 Nexperia Avnet - $0.02 $0.02
BC859C,215 Nexperia Avnet - $0.03 $0.03
BC859C,215 Nexperia element14 Asia-Pacific - $0.02 $0.02
BC859C,215 Nexperia Future Electronics - $0.04 $0.04
BC859C,235 Nexperia Avnet - $0.02 $0.01
BC859C215 NXP Semiconductors Rochester Electronics 207,000 $0.05 $0.04
BC859C215 Nexperia Rochester Electronics 399,000 $0.05 $0.04
BC859CE6327HTSA1 Infineon Technologies AG Avnet - $0.02 $0.01
BC859CE6327HTSA1 Infineon Technologies AG Rochester Electronics 219,000 $0.02 $0.02
BC859CLT1 ON Semiconductor Rochester Electronics 165,000 $0.22 $0.18
BC859CLT1 ON Semiconductor ComS.I.T. 1,775 - -
BC859CLT1G ON Semiconductor Wuhan P&S 2,950 $0.01 $0.01
BC859CW,115 Nexperia Chip1Stop 2,898 $0.06 $0.03
BC859CW,115 Nexperia element14 Asia-Pacific - $0.02 $0.02
BC859CW,115 Nexperia Avnet - $0.02 $0.02
BC859CW,115 Nexperia Avnet - $0.03 $0.02
BC859CW,115 Nexperia New Advantage Corporation 18,000 $0.03 $0.03
BC859CW,135 Nexperia Avnet - - -
BC859CW/ZL115 NXP Semiconductors Rochester Electronics 280,999 $0.02 $0.02
BC859CW115 NXP Semiconductors Rochester Electronics 3,190 $0.04 $0.03
BC859CW135 NXP Semiconductors Rochester Electronics 10,000 $0.04 $0.03

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BC859C datasheet (46)

Part Manufacturer Description Type PDF
BC859C Continental Device India Silicon Planar Epitaxial Transistors, SOT-23 Original PDF
BC859C Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC859C Fairchild Semiconductor Switching and Amplifier Applications Original PDF
BC859C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BC859C General Semiconductor Small Signal Transistors (PNP) Original PDF
BC859C Infineon Technologies PNP Silicon AF Transistor Original PDF
BC859C Infineon Technologies SOT23 package Original PDF
BC859C Philips Semiconductors PNP general purpose transistors Original PDF
BC859C Siemens NPN Silicon AF Transistor Original PDF
BC859C Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF
BC859C ITT Semiconductors PNP Silicon Epitaxial Planar Transistor Scan PDF
BC859C Motorola European Master Selection Guide 1986 Scan PDF
BC859C Others Transistor Shortform Datasheet & Cross References Scan PDF
BC859C Others Catalog Scans - Shortform Datasheet Scan PDF
BC859C National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan PDF
BC859-C National Semiconductor Bipolar Pro Electron Series Scan PDF
BC859C STMicroelectronics Shortform Data Book 1988 Scan PDF
BC859C Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
BC859C,215 NXP Semiconductors PNP general purpose transistors - Complement: BC849C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BC859C,235 NXP Semiconductors PNP general purpose transistors - Complement: BC849C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF

BC859C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - BC860C

Abstract: BC849 BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
Text: * BC860C 4G* 2 4F* BC859C 2 1 Top view MAM256 Note 1. * = p : Made in Hong Kong , package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , V; see Figs 2 and 3 220 - 475 420 - 800 BC859B; BC860B BC859C ; BC860C , - 4 dB BC859B; BC860B; BC859C ; BC860C noise figure BC859B; BC860B; BC859C ; BC860C , 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C ; BC860C


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C BC850 BC859 BC859B BC859C BC860 BC860B bc860 nxp
2004 - BC860C

Abstract: BC860 BC849 BC850 BC859 BC859B BC859C BC860B
Text: * BC860C 4G* 2 4F* BC859C 2 1 Top view MAM256 Note 1. * = p : Made in Hong Kong , package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 Philips , ; BC860B BC859C ; BC860C collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - -75 , ; B = 200 Hz - - 4 dB BC859B; BC860B; BC859C ; BC860C noise figure BC859B; BC860B; BC859C ; BC860C Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C SCA76 BC860C BC860 BC850 BC859 BC859B BC859C BC860B
2009 - BC860C

Abstract: No abstract text available
Text: * BC860C 4G* 2 4F* BC859C 2 1 Top view MAM256 Note 1. * = p : Made in Hong Kong , package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , ˆ’ 475 420 − 800 BC859B; BC860B BC859C ; BC860C collector-emitter saturation voltage , −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB BC859B; BC860B; BC859C ; BC860C noise figure BC859B; BC860B; BC859C ; BC860C Notes 1. VBEsat decreases by about −1.7 mV/K


Original
PDF BC859; BC860 BC849 BC850. BC859B BC860B BC860C R75/05/pp8 BC860C
BC860C

Abstract: No abstract text available
Text: ) BC859B 4B* BC860B 4F* BC859C 4C* BC860C 2 - 2 1 4G* Top V ie w , BC859C ; BC860C 420 800 VBEsat lc = -1 0 mA; lB = -0 .5 mA - -7 5 -3 0 0 mV lc , ; lB = - 5 mA; note 1 VcEsat BC859B; BC860B; BC859C ; BC860C noise figure BC859B; BC860B; BC859C ; BC860C Notes 1■VBEsat decreases by about -1 .7 mV/K with increasing temperature. 2


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PDF BC859; BC860 BC849 BC850. BC859B BC860B BC859C BC860C MAM256 BC860C
4gp transistor

Abstract: BC859 BC860 PHILIPS marking Code 5C marking 4Gp BC860C
Text: NUMBER BC859 BC859A BC859B BC859C MARKING CODE 4Dp 4Ap 4Bp 4Cp TYPE NUMBER BC860 BC860A BC860B , current gain DC current gain BC859A; BC860A BC859B: BC860B BC859C ; BC860C CONDITIONS |E = 0; VCB = -3 , ; BC860B BC859C ; BC860C lc = -10 mA; Ib = -0.5 mA; note 1 lc = -100 mA; Ib = - 5 mA; note 1 lc = - 2 , Hz - - 4 F noise figure BC859A; BC860A BC859B; BC860B BC859C ; BC860C 10 4 . . dB


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PDF BC859; BC860 BC849 BC850. BC859 BC859A BC859B BC859C BC860 BC860A 4gp transistor PHILIPS marking Code 5C marking 4Gp BC860C
BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 2N4858 smd BFG65 BC547 smd BF980
Text: BC107A BC847A BC200/03 BC859C BCW32 BCW71 BCF30 BC548C BC848C BC107B BC847B BC327 BC807 BCW33 , BC850B BD 140 BCX53 BC559C BC859C BCX70H BD140-6 BCX53-G BC560 BC860 BCY59-IX BC850B BD140-10 BCX53 , BRY62 MPS6520 BC859B BF926 BF660 BRY56 BRY61 MPS6521 BC859C BF936 BF536 BSRSO BST50 . MPS6522 BC859B BF939 BSR51 BST51 HPS6523 BC859C BF960 BF989 BSR52 BST52 MPSAÛ5 PMBTA05 BF964 BF994 BSR60 BST60


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PDF 0D12DEÃ BA243 BC146/02 BC849B/C BC338 BC818 BA314 BAS17 BCF32/33 BCX20 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 2N4858 smd BFG65 BC547 smd BF980
1997 - BC860

Abstract: BC859B 215 BC860C BC859A BC860B BC860A BC859C BC859B BC859 BC850
Text: BC859C 4Cp BC860C MAM256 4Ep BC859B 2 Top view 4Hp BC859A 1 4Gp Fig , -5 V; see Figs 2, 3 and 4 125 - 250 BC859B; BC860B 220 - 475 BC859C ; BC860C , - - 4 dB BC859A; BC860A BC859B; BC860B BC859C ; BC860C F noise figure BC859A; BC860A IC = -200 µA; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz BC859B; BC860B BC859C ; BC860C , hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C ; BC860C


Original
PDF M3D088 BC859; BC860 BC849 BC850. SCA54 117047/00/02/pp12 BC860 BC859B 215 BC860C BC859A BC860B BC860A BC859C BC859B BC859 BC850
SMD TRANSISTOR MARKING 4c

Abstract: 4F smd transistor NF marking TRANSISTOR SMD 4f BC859 smd smd transistor 4b smd marking rs MARKING SMD 4G BC859C BC860B BC859
Text: Typ -1 VCB = -30 V, IE = 0 ICBO Collector cutoff current Min 475 420 BC859C , decreases by about -2 mV/K with increasing temperature. hFE Classification TYPE BC859B BC859C


Original
PDF BC859 BC860 OT-23 BC859 BC859B BC859C BC860B BC860C SMD TRANSISTOR MARKING 4c 4F smd transistor NF marking TRANSISTOR SMD 4f BC859 smd smd transistor 4b smd marking rs MARKING SMD 4G BC859C BC860B
bc327 smd

Abstract: bd139 smd 2n2907 smd bc109 smd BC640 smd bc107 smd BC547 smd 2n4401 smd bc558 SMD BC639 smd
Text: BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C BCX54 BCP54 BCX58 BCX59 BCX78 BCX79 , BC858A BC858A BC858B BC859B BC859C BC859B BC859C PMBTA05 PMBTA06 PMBTA13 PMBTA14 PMBTA42 PMBTA43 PMBTA55


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PDF BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd BC640 smd bc107 smd BC547 smd 2n4401 smd bc558 SMD BC639 smd
1999 - BC859B 215

Abstract: BC860C
Text: 4B BC860B 4F BC859C 4C BC860C 2 1 2 4G Top view MAM256 Note 1. = , BC859C ; BC860C VCEsat collector-emitter saturation voltage base-emitter saturation voltage IC = , Hz - - 4 dB BC859B; BC860B; BC859C ; BC860C noise figure BC859B; BC860B; BC859C , hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C ; BC860C


Original
PDF M3D088 BC859; BC860 BC849 BC850. BC859B BC860B 115002/04/pp8 BC859B 215 BC860C
smd code marking TV sot23

Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 BCF70 smd transistors sot-23 MARKING CODE N C marking p1r
Text: F F F F F F F F PNP BC859A BC859B BC859C BCF29 BCF30 BC860A BC860B BC860C BCF70 PMBT5086 , 2Gp 4Ap 4Bp Type No. BC859C BC860A BC860B BC860C BCF29 BCF30 Coda 4Cp 4Ep 4Fp 4Gp C7p C8p


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PDF OT-23 BC849B BC849C BC850B BC850C BC859A BC859B BC859C BC860A smd code marking TV sot23 SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 BCF70 smd transistors sot-23 MARKING CODE N C marking p1r
Not Available

Abstract: No abstract text available
Text: Typ -1 VCB = -30 V, IE = 0 ICBO Collector cutoff current Min 475 420 BC859C , Classification TYPE BC859B BC859C Marking 4B 4C TYPE BC860B BC860C Marking 4F


Original
PDF BC859 BC860 OT-23 BC859 E-850 BC859B BC859C BC860B BC860C
2F PNP SOT23

Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS marking codes SOT iSS marking c7 sot-23 SMD MARKING CODE 4E MARKING H7 SOT-23
Text: PMBT6429 PMBT6428 PNP BC859A BC859B BC859C BCF29 BCF30 BC860A BC860B BC860C BCF70 PMBT5086 PMBT5087 PACKAGE , MARKING CODES ïÿpe No. BC849B BC849C BC850B BC850C BC859A BC859B Code 2B 2C 2F 2G 4A 4B T^pe No. BC859C


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PDF PMBT5089 BC849B BC849C PMBT5088 BCF32 BCF33 BC850B BC850C BCF81 PMBT6429 2F PNP SOT23 MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS marking codes SOT iSS marking c7 sot-23 SMD MARKING CODE 4E MARKING H7 SOT-23
2001 - Not Available

Abstract: No abstract text available
Text: =3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C WEITRON http://www.weitron.com.tw 2/4 Rev , , BC858B, BC859B BC857C, BC858C, BC859C Collector-Emitter Saturation Voltage (IC= -10mA, IB


Original
PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859
2001 - Not Available

Abstract: No abstract text available
Text: =3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C WEITRON http://www.weitron.com.tw 2/4 Rev , , BC859B BC857C, BC858C, BC859C Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC


Original
PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859
2009 - transistor 56B marking

Abstract: Transistor 59B 856B 858C BC856 MARKING bc847 SOT-23 B 856B
Text: BC857C, BC858C, BC859C - 270 - Collector - Emitter Breakdown Voltage BC856A,B (I C , 220 BC856B, BC857B, BC858B, BC859B 200 290 450 BC857C, BC858C, BC859C (I C =-2.0mA


Original
PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 transistor 56B marking Transistor 59B 856B 858C MARKING bc847 SOT-23 B 856B
BCs56

Abstract: BC857Ser BC85 BC856 BC857 BC858 BC859
Text: =3j bc858b=3k; bc858c=3l. bc859b=4b; bc859c=4c BC856A/B-BC857A/B BC858A/B/C-BC859B/C 20 1.5 1.0 07 OS , 0mA,VCE=-5 0V> BC856A BC857A BC858A BC856B, BC857B BC858B BC859B BC858C, BC859C hFE 125 220 420 90 150


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PDF /B-BC857A/B BC858A/B/C- BC859B/C BC856 BC857 BC858 BC859 BCs56 BC857Ser BC85
BC pnp 200mA

Abstract: PNP -50V -200mA sot23 BC859 BC858A BC858 BC857A BC857 BC856A BC856 transistor BC SERIES
Text: =3L; BC859B=4B; BC859C=4C WEITRON http://www.weitron.com.tw 2/4 Rev A 12-Apr-05 BC856A/B-BC857A , , BC858C, BC859C Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB


Original
PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859 BC pnp 200mA PNP -50V -200mA sot23 BC859 BC858A BC857A BC857 BC856A BC856 transistor BC SERIES
2011 - transistor 56B marking

Abstract: No abstract text available
Text: , BC858B, BC859B BC857C, BC858C, BC859C h FE (I C =-2.0mA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector ­ Emitter Saturation Voltage (IC =-10mA, I B =-0.5mA) VCE


Original
PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 A063-REV transistor 56B marking
2001 - Not Available

Abstract: No abstract text available
Text: =3K; BC858C=3L; BC859B=4B; BC859C=4C WEITRON http://www.weitron.com.tw 2/4 Rev A 12-Apr-05 BC856A , , BC858C, BC859C Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB


Original
PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859
2001 - BC857

Abstract: No abstract text available
Text: =3L; BC859B=4B; BC859C=4C http://www.weitron.com.tw pF dB NF Device Marking WEITRON 4.5 , = -2.0mA,VCE=-5.0V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC858C, BC859C hFE


Original
PDF BC856A/B-BC857A/B BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859 BC857
FMMT415

Abstract: VHF Transistors BC856B BC857A BC857B BC856A BCW70 BCW89 FMMT3905 FMMT3906
Text: 0.25 10/0.5 300 BC859C 30 30 100 350 420/800 2/5 0.25 10/0.5 300 FMMT4126 25 25 200 350 120/360 2/1 , 0.2/5 300 BC859C 30 30 100 350 420/800 2/5 4 0.2/5 300 AVALANCHE TRANSISTOR (NPN) hFE at Peakt


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PDF OT-23 BC856A BC856B BCW89 FMMT3905 FMMT3906 FMMTA70 FMMT5087 BCW69 BCW70 FMMT415 VHF Transistors BC857A BC857B
2003 - transistor 56B marking

Abstract: 856B 858C BC856 BC857
Text: 90 - BC856B, BC857B, BC858B, BC859B - 150 - BC857C, BC858C, BC859C - 270 - , 200 290 450 BC857C, BC858C, BC859C (I C =-2.0mA, VCE=-5V) 420 520 800 - -


Original
PDF BC856 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-750 transistor 56B marking 856B 858C BC857
2003 - transistor 56B marking

Abstract: TRANSISTOR BC 119
Text: , BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C h FE (I C =-2.0mA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector ­ Emitter Saturation Voltage (IC


Original
PDF BC856/BC857/BC858/BC859 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-202 transistor 56B marking TRANSISTOR BC 119
BTA18

Abstract: MMBT pnp BT5771 SOT23 M
Text: Fairchild Semiconductor Qjscrete pQwer an(j SjQna| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued) Low Noise Amplifiers Part Number BV Min NF (dB) M ax Mm 400 500 250 410 430 T *» *6 V20S nA ÛI Package NMi M M B T 5089 MM BTA18 M M B T 2484 25 45 60 2 1.5 SOT-23 SOT-23 SOT-23 m 10 3 10 10 1 w PK* BC857C BC858C BC859C 45 30 2 2 ' SOT-23 SOT-23 SOT-23 M0 30 BV Min 4 `on (ns) M ax .2 High Speed Saturated


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PDF BTA18 OT-23 OT-23 BC857C BC858C BC859C MMBT pnp BT5771 SOT23 M
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