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BC859

Abstract:
Text: SEMICONDUCTOR BC859/ 860 TECHNICAL DATA epitaxial planar pnp transistor GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. • For Complementary with NPN Type BC849/850 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC859 VcBO -30 V BC860 -50 Collector-Emitter Voltage BC859 VcEO -30 V BC860 -45 Emitter-Base Voltage Vebo -5 V Collector Current Ic -100 mA , MARK 4A 4B 4E 4G Marking Type Name R B H Lot No. 1998. 6. 15 Revision No : 2 1/2 BC859/ 860


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PDF BC859/860 BC849/850 BC859 BC860 10x8x0 BC859A BC859B BC860A BC860 BC860B
MARKING 9AB

Abstract:
Text: BC856/857/858/859/ 860 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â , Collector-Base Voltage VcbO BC856 -80 V BC857/ 860 -50 V BC858/859 -30 V Collector-Emitter Voltage VcEO BC856 -65 V BC857/ 860 -45 V BC858/859 -30 V Emitter-Base Voltage Vebo -5 V Collector , PF Noise Figure : BC856/857/858 NF VCE= -5V, lc= -200nA 2 10 dB : BC859/ 860 f=1 KHz, Rg=2K£1 1 , /859/ 860 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER VOLTAGE -2 -4 -6 -8


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859 MARKING 9AB 9aa marking ROA sot 23 BC860 BC859 BC856 BC850 BC846 9AB TRANSISTOR 859-C
1998 - MARKING 9AB

Abstract:
Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/ 860 SWITCHING AND AMPLIFIER APPLICATIONS , mA mW VCBO Collector-Base Voltage :BC856 :BC857/ 860 :BC858/859 Collector-Emitter Voltage :BC856 :BC857/ 860 :BC858/859 Emitter-Base Voltage Collector Current (DC) Collector Dissipation , Product fT Collector-Base Capacitance Noise Figure :BC856/857/858 :BC859/ 860 :BC859 :BC860 , 9CB 9CC 9DA 9DB 9DC 9EA 9EB 9EC BC856/857/858/859/ 860 PNP EPITAXIAL


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PDF BC856/857/858/859/860 OT-23 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859 MARKING 9AB BC856 9aa marking 9AB TRANSISTOR sot 23 mark 9CB 9EA marking MARKING 9CA marking 9aa 9EC TRANSISTOR TRANSISTOR 9BB
2008 - BC859

Abstract:
Text: SEMICONDUCTOR BC859/ 860 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. For Complementary with NPN Type BC849/850 Voltage BC860 Collector-Emitter BC859 Voltage BC860 -30 VCBO P -30 VCEO V -45 VEBO -5 V IC -100 mA PC * 350 mW Tj 150 Tstg Emitter-Base Voltage D V -50 , MARK 4A 4B 4E 4G 1998. 6. 15 Revision No : 2 Type Name 1/2 BC859/ 860 I C


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PDF BC859/860 BC849/850 BC860 BC859 BC859 BC859A BC859B BC860 BC860A BC860B
kl 00

Abstract:
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC859/ 860 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. • For Complementary with NPN Type BC849/850 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC859 VcBO -30 V BC860 -50 Collector-Emitter Voltage BC859 VcEO -30 V BC860 -45 Emitter-Base Voltage , Revision No : 2 1/2 BC859/ 860 Ic " VcE u - w « o Pi o H O O O 0 -4 -8 -12 -16 -20


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PDF BC859/860 BC849/850 BC859 BC860 10x8x0 kl 00 BC859A BC859B BC860 BC860A BC860B
MARKING 9AB

Abstract:
Text: BC856/857/858/859/ 860 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER APPLICATIONS , Collector Base Voltage VcBO BC856 -80 V :BC857/ 860 -50 V BC858/859 -30 V Collector Emitter Voltage VcEO BC856 -65 V :BC857/ 860 -45 V :BC858/859 -30 V Emitter-Base Voltage Vebo -5 V Collector , Bandwidth Product Collector Base Capacitance Noise Figure .BC856/85 7/858 BC859/ 860 BC859 BC860 IcBO hFE , Manufacturer BC856/857/858/859/ 860 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC856 BC857/860 BC858/859 MARKING 9AB 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
SOT-23 MARK 9B

Abstract:
Text: BC856/857/858/859/ 860 SWITCHING AND AMPLIFIER APPLICATIONS · Sutable for automatic insertion in thick and thin-film circuits . L O W NOISE: BC859, BC860 · Complement to BC846 . BC850 PNP , Collector-Base Voltage BC856 :BC857/ 860 :BC858/859 Collector-Emitter Voltage :BC856 BC857/ 860 :BC858/859 , Figure :BC856/857/858 :BC859/ 860 :BC859 BC860 Sym b o l Iceo hFE V c e (sat) T est C o n d itio n s V , C 532 ELECTRONICS BC856/857/858/859/ 860 STATIC CH AR ACTERISTIC PNP EPITAXIAL SILICON


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 BC856 SOT-23 MARK 9B
2001 - pnp transistor A1 sot-23

Abstract:
Text: BC856/857/858/859/ 860 BC856/857/858/859/ 860 Switching and Amplifier Applications · Suitable , Voltage : BC856 : BC857/ 860 : BC858/859 VCEO Collector-Emitter Voltage : BC856 : BC857/ 860 : BC858/859 , Output Capacitance Noise Figure : BC856/857/858 : BC859/ 860 : BC859 : BC860 Test Condition VCB= -30V, IE , /859/ 860 hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 Marking Code , Rev. A1, June 2001 BC856/857/858/859/ 860 Typical Characteristics -50 -45 1000 IC[mA


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 pnp transistor A1 sot-23 FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 16 TRANSISTOR sot-23 Cross Reference sot23 FAIRCHILD SOT-23 MARK PC SOT-23 Product Code Top Mark PC mark code 14 SOT-23 3B SOT23-3 9aa marking
Not Available

Abstract:
Text: 4 f 5 i BC 859 B C 860 ± O 500 _ v BE (m V ) 1000 Fig. 3 Typical values. —V qe = 5 , PHILIPS/DISCRETE LLSBTBl 0 0 1 SS 50 0 OLE D '29' t5 BC 859 B C 860 7 2 6 0 1 3 8 .1 , 5BC859 BC 860 Fig. 11 Typical values. 10-1 Fig. 13 Typical values. 1 - I c


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PDF OT-23 BC859 BC860 bbS3T31 BC859; BC860;
Not Available

Abstract:
Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/ 860 SWITCHING AND AMPLIFIER APPLICATIONS , Symbol Unit -80 -50 -30 Collector-Base Voltage : BC856 : BC857/ 860 : BC858/859 Collector-Emitter Voltage : BC856 : BC857/ 860 : BC858/859 Emitter-Base Voltage Collector Current (DC , : BC859/ 860 : BC859 : BC860 NF Test Conditions Min -30V, lE =0 Vce= -5V, Iq= -2mA lc , Corporation PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/ 860 BASE-EMITTER VOLTAGE STATIC


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PDF BC856/857/858/859/860 OT-23 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859
BC859

Abstract:
Text: SEMICONDUCTOR BC859/ 860 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. A 2 Voltage BC860 Collector-Emitter BC859 Voltage BC860 -30 VCBO P -30 V -45 VEBO -5 V IC -100 mA PC * 350 mW Tj 150 Tstg Emitter-Base Voltage H V -50 VCEO 1 P J BC859 UNIT , 4G 1998. 6. 15 Revision No : 2 Type Name 1/2 BC859/ 860 I C - V BE -50 -100


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PDF BC859/860 BC860 BC859 Ta-10 BC859 BC859A BC859B BC860 BC860A BC860B
Not Available

Abstract:
Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/ 860 SWITCHING AND AF AMPLIFIER , °C ) Characteristic Symbol Collector Base Voltage :BC856 :BC857/ 860 :BC858/859 Collector Emitter Voltage :BC856 :BC857/ 860 :BC858/859 Emitter-Base Voltage Collector Current (DC) Collector Dissipation , / 860 :BC859 :BC860 Cebo NF Test Condition Min V ob= - 3 0 V . IE= 0 Vce= - 5V, lc= - 2 , TRANSISTOR BC856/857/858/859/ 860 BASE-EMITTER VOLTAGE lc(mA>, COLLECTOR CURRENT STATIC


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PDF BC856/857/858/859/860 BC859, BC860 BC846 OT-23 BC856 BC857/860 BC858/859
1999 - 856B

Abstract:
Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/ 860 SWITCHING AND AMPLIFIER APPLICATIONS , V V V mA mW °C °C VCBO Collector-Base Voltage : BC856 : BC857/ 860 : BC858/859 Collector-Emitter Voltage : BC856 : BC857/ 860 : BC858/859 Emitter-Base Voltage Collector Current (DC , /857/858 : BC859/ 860 : BC859 : BC860 CCBO NF VCB= -30V, IE=0 VCE= -5V, IC= -2mA IC= -10mA , Rev. B ©1999 Fairchild Semiconductor Corporation BC856/857/858/859/ 860 PNP EPITAXIAL


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PDF BC856/857/858/859/860 OT-23 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859 856B 9aa marking BC846 BC850 BC856 BC859 BC860 TRANSISTOR 9BB
2001 - B 856B

Abstract:
Text: BC856/857/858/859/ 860 BC856/857/858/859/ 860 Switching and Amplifier Applications · Suitable , : BC856 : BC857/ 860 : BC858/859 -80 -50 -30 V V V : BC856 : BC857/ 860 : BC858/859 VCEO , ©2001 Fairchild Semiconductor Corporation : BC856/857/858 : BC859/ 860 : BC859 : BC860 VCE= -5V , Semiconductor Corporation Rev. A1, June 2001 BC856/857/858/859/ 860 hFE Classification BC856/857/858/859/ 860 Typical Characteristics -50 1000 IB = - 400µ A IB = - 350µA -40 VCE = - 5V


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 B 856B BC846 BC850 BC856 BC859 BC860
fe marking code

Abstract:
Text: BC856/857/858/859/ 860 SWITCHING AND AMPLIFIER APPLICATIONS · S uitable fo r auto m atic insertion in th ick and thin-film circuits · LOW NOISE: BC859, BC860 · C om plem ent to BC846 . BC850 PNP , lector-Base Voltage : BC856 : BC857/ 860 : BC858/859 C ollector-E m ltter Voltage : BC856 : BC857/ 860 : BC858 , / 860 : BC859 : BC860 NF Sym bol IcBO h FE Test C onditions V cb= -30 V, Ie=0 Vce= -5V, lc = -2m A , Corporation BC856/857/858/859/ 860 STATIC CHARACTERISTIC PNP EPITAXIAL SILICON TRANSISTOR - 0 .2 Vce


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 BC856 BC857/860 BC858/859 fe marking code
2002 - BC846

Abstract:
Text: BC856/857/858/859/ 860 BC856/857/858/859/ 860 Switching and Amplifier Applications · Suitable , : BC856 : BC857/ 860 : BC858/859 -80 -50 -30 V V V : BC856 : BC857/ 860 : BC858/859 VCEO , ©2002 Fairchild Semiconductor Corporation : BC856/857/858 : BC859/ 860 : BC859 : BC860 VCE= -5V , Semiconductor Corporation Rev. A2, August 2002 BC856/857/858/859/ 860 hFE Classification BC856/857/858/859/ 860 Typical Characteristics -50 1000 IB = - 400µ A IB = - 350µA -40 VCE = -


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PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 BC846 BC850 BC856 BC859 BC860
Not Available

Abstract:
Text: mA f = 10 to 50Hz Re = 2 Ki2 forBC 860 o nly 2 1.2 10 4 dB dB 1.4 1.4 4 2 -0.11 dB


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PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC858B BC859A BC859B BC860A BC860B
2006 - BC857CMTF

Abstract:
Text: : BC856 : BC857/ 860 : BC858/859 VCEO Value : BC856 : BC857/ 860 : BC858/859 VCBO , Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure : BC856/857/858 : BC859/ 860 VCE= -5V, IC


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PDF BC856- BC860 BC859, BC846 BC850 OT-23 BC856 BC857/860 BC858/859 BC857CMTF PNP Epitaxial Silicon Transistor sot-23 BC857BMTF BC857AMTF bc856bmtf BC859BMTF marking 25 SOT-23 ref IC BC860 BC850 9aa marking
2006 - MV TRANSISTOR SOT23

Abstract:
Text: -30 V V V : BC856 : BC857/ 860 : BC858/859 VCEO Value : BC856 : BC857/ 860 : BC858 , Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure : BC856/857/858 : BC859/ 860 VCE= -5V, IC


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PDF BC856- BC860 BC859, BC846 BC850 OT-23 BC856 BC857/860 BC858/859 MV TRANSISTOR SOT23
Not Available

Abstract:
Text: Iq - 10 m A ; -V q e B C 860 50 45 200 250 150 125 800 V V mA mW °C " V CEX ~ v CEO - 'C M ^ , 4Ap = 4Bp = 4C p = 4H p = 4Ep - 4Fp = 4G p 0.150 B C 859C BC 860 BC 860A B C 860B B C 860C , axm a x. 30 30 30 5 100 200 200 200 250 -6 5 t o + 15 0 150 B C 860 50 50 45 5 mA mA mA mA mW °C °C , q = 2 0 0 p A ; -V q | : = 5 V f = 3 0 H z t o 15 k H z F ty p . < B C 859 1,2 4 1 4 B C 860


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PDF BC859 BC860
bc856

Abstract:
Text: SIEM ENS PNP Silicon AF Transistors BC 856 . BC 860 Features · · · · · For AF input stages , BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering , . Semiconductor Group 503 04.96 SIEMENS BC 856 . BC 860 Maximum Ratings Parameter Symbol BC 856 , A Ä thJS <310 <240 K/W 7s V ceo V cbo VcES Values BC 857 BC 860 45 50 50 5 100 200 200 200 330 , mm/6 cm2 Cu. Semiconductor Group 504 SIEMENS BC 856 . BC 860 Electrical


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PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc856 bc 856
Not Available

Abstract:
Text: SEMICONDUCTOR BC859/ 860 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 1998. 6. 15 Revision No : 2 1/2 -


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PDF BC859/860
bc109

Abstract:
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS LOW-NOISE TRANSISTORS OVERVIEW leaded TO -18 BC109 BCY57 TO-92 BC549/550 2N5088 SOT23 BC849/850 BCF32/33 BCF81 PMBT5088/89 surface-mount SOT323 Small-signal transistors NPN PMST5088/89 BC849W/850W PNP 2N5087 BC559 BC859/ 860 BCF29/30 BC859W/860W 4-17


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PDF BC109 BCY57 BC549/550 2N5088 BC849/850 BCF32/33 BCF81 PMBT5088/89 OT323 PMST5088/89 bc549 BC549 sot23 2N5087 BC109 sot23 BCF32 BC109 TO-92 BC559 BC849
2002 - BC849

Abstract:
Text: PNP Type BC859/ 860 . -55 150 Collector Current Collector Power Dissipation Junction Temperature


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PDF BC849/850 BC849 BC850 BC849B BC849C BC850B BC849 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
2008 - BC849

Abstract:
Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/ 860 . BC850 BC849 Collector-Emitter Voltage BC850 30 VCBO P V 50 30 VCEO UNIT V 45 P J BC849 Collector-Base Voltage RATING M K SYMBOL 3 1 N CHARACTERISTIC H ) C MAXIMUM RATING (Ta=25 G A 2 VEBO 5 V


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PDF BC849/850 BC859/860. BC850 BC849 00MHz BC849B BC849 2f bc850 BC849B BC849C BC850 BC850B BC850C
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