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BC857AW-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
BC857A-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN,PLASTIC PACKAGE-3
BC857A-TP Micro Commercial Components Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
BC857AW-G Comchip Technology Corporation Ltd Transistor,
BC857AT-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
BC857A-HF Comchip Technology Corporation Ltd TRANS PNP 45V 100MA SOT23
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  You can filter table by choosing multiple options from dropdownShowing 61 results of 78
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC 857A E6327 Infineon Technologies AG Avnet 3,000 $0.10 $0.02
BC857A Philips Semiconductors ComS.I.T. 21,310 - -
BC857A Diodes Incorporated Farnell element14 2,829 £0.18 £0.05
BC857A GSI Technology Bristol Electronics 2,375 $0.15 $0.04
BC857A Diodes Incorporated Newark element14 2,829 $0.15 $0.02
BC857A Nexperia Farnell element14 - £0.09 £0.03
BC857A Nexperia element14 Asia-Pacific - $0.07 $0.01
BC857A SPC Multicomp Farnell element14 - £0.12 £0.02
BC857A NXP Semiconductors Bristol Electronics 30 - -
BC857A Nexperia element14 Asia-Pacific - $0.07 $0.01
BC857A SPC Multicomp element14 Asia-Pacific 130 $0.05 $0.02
BC857A Philips Semiconductors Chip One Exchange 2,250 - -
BC857A-7-F Diodes Incorporated Chip1Stop 3,000 $0.04 $0.02
BC857A-7-F Diodes Incorporated Allied Electronics & Automation - $0.05 $0.03
BC857A-7-F Diodes Incorporated Avnet - $0.01 $0.01
BC857A-TP Micro Commercial Components Chip1Stop 748 $0.05 $0.02
BC857A-TP Micro Commercial Components Future Electronics - $0.03 $0.02
BC857A,215 Nexperia Newark element14 81 $0.01 $0.01
BC857A,215 Nexperia element14 Asia-Pacific - $0.02 $0.02
BC857A,215 Nexperia Future Electronics - $0.02 $0.02
BC857A,215 NXP Semiconductors Bristol Electronics 311 - -
BC857A,215 Nexperia Future Electronics - $0.03 $0.02
BC857A,215 Nexperia Avnet - - -
BC857A,215 Nexperia Chip1Stop 11 $0.06 $0.06
BC857A,215 Nexperia New Advantage Corporation 159,000 $0.02 $0.02
BC857A,215 Nexperia Avnet 48,000 $0.06 $0.05
BC857A215 NXP Semiconductors Rochester Electronics 207,000 $0.02 $0.02
BC857AE6327 Infineon Technologies AG Rochester Electronics 36,000 $0.02 $0.02
BC857AE6327HTSA1 Infineon Technologies AG Rochester Electronics 117,000 $0.04 $0.03
BC857AE6327HTSA1 Infineon Technologies AG Future Electronics - $0.03 $0.02
BC857ALT1 Motorola Semiconductor Products Bristol Electronics 6,000 - -
BC857ALT1 Motorola Semiconductor Products Bristol Electronics 2,640 $0.07 $0.01
BC857ALT1 ON Semiconductor Bristol Electronics 1,655 - -
BC857ALT1G ON Semiconductor Wuhan P&S 2,350 $0.03 $0.02
BC857ALT1G ON SEMICONDUCTOR New Advantage Corporation 12,000 $0.03 $0.02
BC857ALT1G ON Semiconductor Avnet 225,000 $0.09 $0.01
BC857ALT1G ON Semiconductor Farnell element14 - £0.08 £0.02
BC857ALT1G ON Semiconductor Newark element14 164 $0.11 $0.02
BC857ALT1G ON Semiconductor Allied Electronics & Automation - $0.04 $0.03
BC857ALT1G ON Semiconductor element14 Asia-Pacific - $0.03 $0.01
BC857ALT1G ON Semiconductor Chip1Stop 5,400 $0.04 $0.01
BC857AM,315 Nexperia Chip1Stop 850 $0.06 $0.04
BC857AM,315 Nexperia New Advantage Corporation 20,000 - -
BC857AMB Nexperia element14 Asia-Pacific 108 $0.24 $0.03
BC857AMB Nexperia Farnell element14 347 £0.02 £0.02
BC857AMB Nexperia element14 Asia-Pacific 108 $0.24 $0.03
BC857AMTF Fairchild Semiconductor Corporation Bristol Electronics 4,960 - -
BC857AMTF Fairchild Semiconductor Corporation Rochester Electronics 195,781 $0.04 $0.03
BC857AMTF ON Semiconductor Chip1Stop 15,000 $0.04 $0.03
BC857AQA Nexperia Farnell element14 5,149 £0.09 £0.03
BC857AQA147 NXP Semiconductors Rochester Electronics 165,000 $0.04 $0.03
BC857AQAZ Nexperia Avnet - - -
BC857ARF ts ComS.I.T. 12,000 - -
BC857ARTKP KEC ComS.I.T. 24,000 - -
BC857AT-7-F Diodes Incorporated Future Electronics 3,000 $0.02 $0.02
BC857AT115 NXP Semiconductors Rochester Electronics 1,475 $0.04 $0.03
BC857AW-7-F Diodes Incorporated Chip1Stop 5,998 $0.14 $0.04
BC857AW115 NXP Semiconductors Rochester Electronics 471,000 $0.02 $0.02
BC857AWT1 Motorola Semiconductor Products ComS.I.T. 33,000 - -
SBC857ALT1G ON Semiconductor Avnet 60,000 $0.05 $0.04
SBC857ALT1G ON Semiconductor Allied Electronics & Automation - $0.04 $0.04

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BC857A datasheet (105)

Part Manufacturer Description Type PDF
BC857A Central Semiconductor SMD Small Signal Transistor PNP Low Noise Original PDF
BC857A Diodes PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Original PDF
BC857A Diodes PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Original PDF
BC857A Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC857A Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC857A Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
BC857A Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
BC857A Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BC857A Galaxy Semi-Conductor Holdings NPN general purpose Transistor Original PDF
BC857A General Semiconductor Small Signal Transistors (PNP) Original PDF
BC857A Infineon Technologies SOT23 package Original PDF
BC857A Infineon Technologies Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; V<sub>CEO</sub> (max): 45.0 V; V<sub>CBO</sub> (max): 50.0 V; I<sub>C</sub>(max): 100.0 mA; I<sub>CM</sub> (max): 200.0 mA; Original PDF
BC857A Kexin PNP Transistor Original PDF
BC857A Micro Commercial Components PNP Small Signal Transistor 310mW Original PDF
BC857A National Semiconductor PNP General Purpose Amplifier Original PDF
BC857A NXP Semiconductors BC857A - PNP general purpose transistors - Complement: BC847A ; fT min: 100 MHz; hFE max: 250 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V Original PDF
BC857A PanJit Semiconductors PNP GENERAL PURPOSE TRANSISTORS Original PDF
BC857A Philips Semiconductors PNP general purpose transistors Original PDF
BC857A Philips Semiconductors PNP general purpose transistors Original PDF
BC857A Siemens NPN Silicon AF Transistor Original PDF

BC857A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
bc857

Abstract: BC857A 3F TRANSISTOR transistor pnp bc858 BC858A marking pc sot-23 transistor BC856B transistor 3f sot-23 SOT-23 marking 3f
Text: Temperature DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E ;BC857B=3F;BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L BC856A,B BC857A ,B,C BC858A,B,C SOT-23 Transistor(PNP) ELECTRICAL CHARACTERISTICS (Tamb , BC856A,B BC857A ,B,C BC858A,B,C 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Transistor(PNP) SOT , f=100MHz VCB=-10V, f=1MHz BC856A,B BC857A ,B,C BC858A,B,C SOT-23 Transistor(PNP) Typical Characteristics BC856A,B BC857A ,B,C BC858A,B,C SOT-23 Transistor(PNP) BC856A,B BC857A ,B,C BC858A,B,C SOT


Original
PDF BC856A BC857A BC858A OT-23 OT-23 BC856 BC857 BC858 3F TRANSISTOR transistor pnp bc858 marking pc sot-23 transistor BC856B transistor 3f sot-23 SOT-23 marking 3f
1996 - BC857C

Abstract: BC857A BC857B 3GPNP BC857B sot23
Text: BC857A BC857B BC857C C E SOT-23 B Mark: 3E / 3F / 3G PNP General Purpose , mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Max Units * BC857A / B / C 350 2.8 357 mW mW/°C °C/W BC857A / BC857B / BC857C N Discrete POWER & Signal Technologies (continued , ) Collector-Emitter Saturation Voltage VBE( on) Base-Emitter On Voltage I C = 2.0 mA, VCE = 5.0 V BC857A , BC857A / BC857B / BC857C PNP General Purpose Amplifier (continued) (continued) V - BASE


Original
PDF BC857A BC857B BC857C OT-23 BC857A BC857B BC857C 3GPNP BC857B sot23
TRANSISTOR 3F t

Abstract: BC857A SOT-23 transistor code 3e
Text: BC856A/B, BC857A /B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT , -23 BC856A RF 3K / 7" Reel 3A SOT-23 BC856B RF 3K / 7" Reel 3B SOT-23 BC857A RF 3K / 7 , " Reel 3B SOT-23 BC857A RFG 3K / 7" Reel 3E SOT-23 BC857B RFG 3K / 7" Reel 3F SOT , , BC857A /B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Electrical , BC856A, BC857A , BC858A BC856B, BC857B, BC858B BC857C, BC858C DC current gain Collector-Emitter


Original
PDF BC856A/B, BC857A/B/C, BC858A/B/C 250mW, OT-23 MIL-STD-202, TRANSISTOR 3F t BC857A SOT-23 transistor code 3e
3k SOT-23

Abstract: BC857A c10 g sot-23 transistor marking code SOT-23 BC857B BC856A BC858A BC858B RF marking 04 sot-23 transistor packing code 3f
Text: BC856A/B, BC857A /B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Transistor SOT , SOT-23 BC856B RF 3K / 7" Reel 3B SOT-23 BC857A RF 3K / 7" Reel 3E SOT-23 BC857B RF , -23 BC857A RFG 3K / 7" Reel 3E SOT-23 BC857B RFG 3K / 7" Reel 3F SOT-23 BC857C RFG 3K , . Valid provided that electrodes are kept at ambient temperature Version : C10 BC856A/B, BC857A /B/C , MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BC856A, BC857A


Original
PDF BC856A/B, BC857A/B/C, BC858A/B/C 200mW, OT-23 MIL-STD-202, 3k SOT-23 BC857A c10 g sot-23 transistor marking code SOT-23 BC857B BC856A BC858A BC858B RF marking 04 sot-23 transistor packing code 3f
2002 - pnp 3223

Abstract: BC857A
Text: BC857A / BC857B / BC857C BC857A BC857B BC857C C E Mark: 3E / 3F / 3G SOT-23 B , °C Thermal Resistance, Junction to Ambient Max * BC857A / B / C 350 2.8 357 Units mW mW/°C °C/W , BC857A / BC857B / BC857C PNP General Purpose Amplifier Electrical Characteristics Symbol Parameter , C - COLLECTOR CURRENT (mA) 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 3-221 BC857A , (V) 3-222 BC857A / BC857B / BC857C PNP General Purpose Amplifier (continued) Typical


Original
PDF BC857A BC857B BC857C OT-23 pnp 3223
1998 - BC857C

Abstract: BC857A BC857B BC857B PNP
Text: BC857A / BC857B / BC857C BC857A BC857B BC857C C E B SOT-23 Mark: 3E / 3F / 3G PNP , Semiconductor Corporation Max Units * BC857A / B / C 350 2.8 357 mW mW/°C °C/W (continued , Saturation Voltage VBE(on) Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V BC857A BC857B BC857C , ºC - 40 ºC 1 10 100 I C - COLLECTOR CURRENT (mA) P 68 300 BC857A / BC857B / BC857C , 10 Vce- COLLECTOR VOLTAGE(V) 100 BC857A / BC857B / BC857C PNP General Purpose Amplifier


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PDF BC857A BC857B BC857C BC857A BC857B OT-23 BC857C BC857B PNP
Not Available

Abstract: No abstract text available
Text: BC857A / BC857B / BC857C F /M H C H I L D TM S E M IC O N D U C T O R BC857A BC857B BC857C SOT-23 M a rk : 3 E / 3 F / 3 G ' B PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process , r a tio n BC857A / BC857B / BC857C PNP General Purpose Amplifier (continued) Electrical , Current Co I lector-Emitter Saturation BC857A / BC857B / BC857C BC857A / BC857B / BC857C PNP


OCR Scan
PDF BC857A BC857B BC857C OT-23
2010 - transistor packing code 3f

Abstract: TRANSISTOR 3F t transistor marking code SOT-23 SOT-23 marking 050 transistor transistor SOT23 br transistor sot23 SOT-23 transistor code 3e sot-23 MARKING 3l MARKING CODE 16 transistor sot23 3F transistor
Text: BC856A/B, BC857A /B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT , -23 BC857A RF SOT-23 BC857B RF SOT-23 BC857C RF SOT-23 BC858A RF SOT-23 BC858B RF SOT-23 BC858C RF SOT-23 BC856A RFG SOT-23 BC856B RFG SOT-23 BC857A RFG SOT-23 BC857B RFG SOT-23 BC857C RFG SOT-23 BC858A RFG SOT , Version : E11 BC856A/B, BC857A /B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal , V nA A BC856A, BC857A , BC858A BC856B, BC857B, BC858B BC857C, BC858C Collector-Emitter


Original
PDF BC856A/B, BC857A/B/C, BC858A/B/C 250mW, OT-23 MIL-STD-202, C/10s 008gram transistor packing code 3f TRANSISTOR 3F t transistor marking code SOT-23 SOT-23 marking 050 transistor transistor SOT23 br transistor sot23 SOT-23 transistor code 3e sot-23 MARKING 3l MARKING CODE 16 transistor sot23 3F transistor
2011 - k3b transistor

Abstract: K3B SOT-23 bc856b BC857B-13-F K3B SOT23
Text: -7-F BC856BQ-7-F BC856B-13-F BC857A-7-F BC857B-7-F BC857BQ-7-F BC857B-13-F Notes: Marking K3A K3B K3B K3B , Breakdown Voltage Collector Cutoff Current BC856 BC857 BC858 BC856A / BC857A / BC858A Small Signal Current Gain BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Input Impedance BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Output Admittance BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Reverse Voltage Transfer BC856B / BC857B


Original
PDF BC856A-BC858C BC846 BC848) AEC-Q101 OT-23 J-STD-020 BC856A-7-F BC856B-7-F BC856BQ-7-F BC856B-13-F k3b transistor K3B SOT-23 bc856b BC857B-13-F K3B SOT23
SMD TRANSISTOR MARKING 3B

Abstract: 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F transistor smd 3E
Text: Transistors SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/ BC857A ,B,C/BC858A,B,C) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 , / BC857A ,B,C/BC858A,B,C) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons , ,B/KC857A,B,C/KC858A,B,C (BC856A,B/ BC857A ,B,C/BC858A,B,C) Typical Characteristics Fig.1 Static


Original
PDF KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 SMD TRANSISTOR MARKING 3B 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F transistor smd 3E
3F smd marking

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/ BC857A ,B,C/BC858A,B,C) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic , IC SMD Type Product specification KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/ BC857A ,B,C , (BC856A,B/ BC857A ,B,C/BC858A,B,C) Typical Characteristics Fig.1 Static Characteristic Fig.3 Base


Original
PDF KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 3F smd marking
2003 - TRANSISTOR SMD MARKING CODE 3d

Abstract: MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR A1 SOT23 smd transistor t4 smd marking code 3D smd marking rs
Text: NUMBER BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858B Note 1. * = p: made in Hong Kong. * = t , BC856A; BC857A BC856B; BC857B; BC858B BC857C VCEsat collector-emitter saturation voltage VEB = -5 V; IC = , 10 - 102 - 103 I C (mA) 0 - 10-2 - 10-1 -1 - 10 - 102 - 103 I C (mA) BC857A ; VCE = -5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C. BC857A ; VCE = -5 V. (1) Tamb = , ) BC857A ; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C. BC857A ; IC/IB = 20. (1


Original
PDF M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC856 BC856A BC856B TRANSISTOR SMD MARKING CODE 3d MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR A1 SOT23 smd transistor t4 smd marking code 3D smd marking rs
2014 - Not Available

Abstract: No abstract text available
Text: BC856A/B, BC857A /B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT , BC856A, BC857A , BC858A DC Current Gain - -45 IC = 0 VCB= -70V BC857 Emitter Cut-off , Function of Collector Current; Typical Values hFE - IC 500 VBE - IC 1200 hFE 450 BC857A : VCE=5V 400 350 BC857A : VCE=-5V 1000 Ta=55OC 800 Ta=150OC 300 VBE 250 600 , Suggested PAD Layout DIM. Marking Part No. Marking BC856A 3A BC856B BC857A 3B 3E


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PDF BC856A/B, BC857A/B/C, BC858A/B/C 200mW, OT-23 MIL-STD-202, C/10s BC856A BC856B BC857A
2011 - k3b transistor

Abstract: BC856B BC858BQ-7-F BC857C K3B SOT23 k1 marking 2k Marking k3b SOT23 BC856BQ-7-F BC856A-BC858C BC857B sot23
Text: -7-F BC856BQ-7-F BC856B-13-F BC857A-7-F BC857B-7-F BC857BQ-7-F BC857B-13-F Notes: Marking K3A K3B K3B K3B , Breakdown Voltage Collector Cutoff Current BC856 BC857 BC858 BC856A / BC857A / BC858A Small Signal Current Gain BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Input Impedance BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Output Admittance BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Reverse Voltage Transfer BC856B / BC857B


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PDF BC856A-BC858C BC846 BC848) AEC-Q101 OT-23 J-STD-020 BC856A-7-F BC856B-7-F BC856BQ-7-F BC856B-13-F k3b transistor BC856B BC858BQ-7-F BC857C K3B SOT23 k1 marking 2k Marking k3b SOT23 BC856A-BC858C BC857B sot23
2011 - k3b transistor

Abstract: Marking k3b SOT23 K3B sot23
Text: -7-F BC856B-13-F BC857A-7-F BC857B-7-F BC857BQ-7-F BC857B-13-F K3A K3B K3B K3B K3A K3B K3B K3B , - hie - BVCBO BVCEO Collector Cutoff Current BC856 BC857 BC858 BC856A / BC857A / BC858A Small Signal Current Gain BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Input Impedance BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Output Admittance BC856B / BC857B / BC858B (Note 6) BC857C / BC858C BC856A / BC857A / BC858A Reverse


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PDF BC856A-BC858C BC846 BC848) AEC-Q101 OT-23 J-STD-020 BC856A BC858C DS11207 k3b transistor Marking k3b SOT23 K3B sot23
2007 - BC846

Abstract: BC856 BC856A BC857 BC857A BC858 BC858A
Text: Min Max 125 220 420 250 475 800 DEVICE MARKING BC856A=3A, BC856B=3B, BC857A=3E , Pb BC856A,B BC857A ,B,C BC858A,B,C RoHS COMPLIANCE 0.2 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction , (BC856A,B/ BC857A ,B,C/ BC858A,B,C) 500 FIG.1- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT , ) -10 -100 Version: B07 -1000 RATINGS AND CHARACTERISTIC CURVES (BC856 A,B/ BC857A ,B,C


Original
PDF BC856A BC857A BC858A OT-23 BC846) AEC-Q101 OT-23, J-STD-020C MIIL-STD-202, BC846 BC856 BC857 BC858
2003 - transistor 56B marking

Abstract: 856B 858C BC856 BC857
Text: - - -100 nA - - -15 nA - - -4.0 uA BC856A, BC857A , BC858A - , Collector - Emitter Breakdown Voltage BC856A,B (I C =-10mA, IB =0) BC857A ,B,C V(BR)CE0 Collector - Base Breakdown Voltage (I C =-10µA, IE=0) BC857A ,B,C V(BR)CB0 BC858A,B,C, BC859B,C Emitter , I CBO - h FE BC856A, BC857A , BC858A 110 180 220 BC856B, BC857B, BC858B, BC859B


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PDF BC856 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-750 transistor 56B marking 856B 858C BC857
BC856A

Abstract: BC856 BC856B BC857 BC857A BC857C BC858 BC858A
Text: =100MHz DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E ; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C , BC856A, B BC857A , B, C BC858A, B, C Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n General Purpose Transistor PNP Type n Collect , individual Page 1 of 3 BC856A, B BC857A , B, C BC858A, B, C Elektronische Bauelemente Typical , BC857A , B, C BC858A, B, C Elektronische Bauelemente BC856 TJ = 25°C VCE = -5.0 V TA = 25


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PDF BC856A, BC857A, BC858A, OT-23 01-Jun-2004 BC856A BC856 BC856B BC857 BC857A BC857C BC858 BC858A
2009 - transistor 56B marking

Abstract: Transistor 59B 856B 858C BC856 MARKING bc847 SOT-23 B 856B
Text: uA BC856A, BC857A , BC858A - 90 - BC856B, BC857B, BC858B, BC859B - 150 - , =-10mA, IB =0) BC857A ,B,C V(BR)CEO Collector - Base Breakdown Voltage (I C =-10µA, IE=0) BC857A , Gain (I C =-10µA, VCE=-5V) V V I CBO - h FE BC856A, BC857A , BC858A 110 180


Original
PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 transistor 56B marking Transistor 59B 856B 858C MARKING bc847 SOT-23 B 856B
1998 - 857-B

Abstract: BC857A BC857B BC857C
Text: BC857A / BC857B / BC857C BC857A BC857B BC857C C E B SOT-23 Mark: 3E / 3F / 3G PNP , * BC857A / B / C 350 2.8 357 mW mW/°C °C/W 3 (continued) Electrical Characteristics , ) 300 BC857A / BC857B / BC857C PNP General Purpose Amplifier (continued) (continued , I B - BASE CURRENT (uA) 2000 4000 BC857A / BC857B / BC857C PNP General Purpose Amplifier , -23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 BC857A / BC857B


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PDF BC857A BC857B BC857C BC857A BC857B OT-23 857-B BC857C
2013 - Not Available

Abstract: No abstract text available
Text: Marking BC856A-7-F BC856AQ-7-F BC856B-7-F BC856BQ-7-F BC856B-13-F BC856BQ-13-F BC857A-7-F , Current Gain (Note 10) BC856A / BC857A / BC858A BC856B / BC857B / BC858B BC857C / BC858C BC856A / BC857A / BC858A BC856B / BC857B / BC858B BC857C / BC858C BC856A / BC857A / BC858A BC856B / BC857B / BC858B BC857C / BC858C BC856A / BC857A / BC858A BC856B / BC857B / BC858B BC857C / BC858C BC856A / BC857A / BC858A BC856B / BC857B / BC858B BC857C / BC858C Noise Figure Notes: nA nA Test


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PDF BC856A-BC858C BC846 BC848 AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS11207
smd Schottky diode sod-123 marking code 220

Abstract: transistor BC557 base collector emitter SOD-123H JC0-024 BC856 BC857 3E DIODE bc556 SMD TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE PK 14
Text: leakage current and thermal resistance. Low VF Chip Schottky Barrier Diodes BC856A/BWT1 BC857A /B , on rate load (JEDEC methode) O V R BC857AWT1 = V RRM T J = = 25 C BC857BWT1 = 3F; BC856AWT1 = 3A , CORP. BC856A/BWT 1 FM120-M + THRU BC857A /B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER , , BC857A , BC858A · High DC Current Gain Guardring for overvoltage protection. · BC856B, BC857B, BC858B (I C , Silicon epitaxial planar chip, BC856A, BC857A , BC858A (I C = ­2.0 mA, V CE = ­5.0 V) · Lead-free parts


Original
PDF SL12-N SL14-N BC856A/BWT1 BC857A/B/CWT1 0V-40V BC858A/B/CWT1 OD-323-L FM120-MH FM130-MH FM140-MH smd Schottky diode sod-123 marking code 220 transistor BC557 base collector emitter SOD-123H JC0-024 BC856 BC857 3E DIODE bc556 SMD TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE PK 14
2002 - BC857

Abstract: BC846 BC857B BC857A BC856B BC856A BC856 BC848 BC847 BC858
Text: 3B* BC857 3H* BC857A 3E* BC857B 3F* BC857C 3G* BC858B 3K* 2 1 Top , 475 BC857 125 - 800 BC856A; BC857A 125 - 250 BC856B; BC857B; BC858B 220 , 0 -10-2 -102 -103 I C (mA) -10-1 BC857A ; VCE = -5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C. Fig.3 -10 -102 -103 I C (mA) BC857A ; VCE = -5 V. (1) Tamb = -55 , -10-1 -1 -10 0 -10-1 -102 -103 I C (mA) -1 BC857A ; IC/IB = 20. (1) Tamb = 150 °C.


Original
PDF M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC857 BC846 BC857B BC857A BC856B BC856A BC856 BC848 BC858
2011 - transistor 56B marking

Abstract: No abstract text available
Text: ) PARAMETER Collector - Emitter Breakdown Voltage (I C =-10mA, IB =0) BC856A,B BC857A ,B,C V(BR)CEO BC858A,B,C, BC859B,C Collector - Base Breakdown Voltage (I C =-10 µA, IE=0) BC856A,B BC857A ,B,C V(BR)CBO BC858A,B,C , -50 -30 -5.0 T J=150 OC DC Current Gain (IC =-10 µA, VCE=-5V) BC856A, BC857A , BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C h FE (I C =-2.0mA, VCE=-5V) BC856A, BC857A , BC858A BC856B, BC857B


Original
PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 A063-REV transistor 56B marking
BC857B, BC857C NATIONAL

Abstract: BC857A BC857B BC857C 210CN
Text: (9 Discrete POWER & Signal National Technologies Semiconductor'" BC857A BC857B BC857C Mark: 3E/3F/3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25 , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units * BC857A / B / C Pd Total , °C 15 4.0 nA UA ON CHARACTERISTICS hFE DC Current Gain lc = 2.0 mA, VCE = 5.0 V BC857A BC857B


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PDF BC857A BC857B BC857C OT-23 BC857B, BC857C NATIONAL BC857C 210CN
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