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Search Stock (14)

  You can filter table by choosing multiple options from dropdownShowing 14 results of 14
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC856W Nexperia Farnell element14 8,684 £0.10 £0.02
BC856W Nexperia Newark element14 8,589 $0.14 $0.02
BC856W Nexperia element14 Asia-Pacific 8,589 $0.09 $0.01
BC856W,115 Nexperia Avnet - $0.02 $0.01
BC856W,115 Nexperia Future Electronics - $0.02 $0.02
BC856W,115 Nexperia New Advantage Corporation 15,000 $0.03 $0.02
BC856W,115 Nexperia Chip1Stop 77,111 $0.05 $0.04
BC856W,115 Nexperia Avnet - $0.02 $0.02
BC856W,115 Nexperia Chip1Stop 36,000 $0.02 $0.02
BC856W,135 Nexperia Chip1Stop 880 $0.05 $0.02
BC856W,135 Nexperia Avnet - - -
BC856W/ZL115 NXP Semiconductors Rochester Electronics 456,000 $0.02 $0.02
BC856W115 NXP Semiconductors Rochester Electronics 419,920 $0.02 $0.02
BC856W135 NXP Semiconductors Rochester Electronics 1,495 $0.02 $0.02

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BC856W datasheet (23)

Part Manufacturer Description Type PDF
BC856W Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC856W Galaxy Semi-Conductor Holdings PNP Silicon Epitaxial Planar Transistor Original PDF
BC856W Infineon Technologies PNP Silicon AF Transistors Original PDF
BC856W Infineon Technologies PNP Silicon AF Transistors Original PDF
BC856W Kexin PNP General Purpose Transistor Original PDF
BC856W Korea Electronics General Purpose Transistor Original PDF
BC856W NXP Semiconductors BC856W - PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V Original PDF
BC856W Philips Semiconductors PNP General Purpose Transistor Original PDF
BC856W Philips Semiconductors PNP general purpose transistors Original PDF
BC856W Philips Semiconductors PNP General Purpose Transistor Original PDF
BC856W Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF
BC856W Siemens Cross Reference Guide 1998 Original PDF
BC856W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BC856W TY Semiconductor PNP General Purpose Transistor - SOT-323 Original PDF
BC856W Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
BC856W Korea Electronics General Purpose Transistor Scan PDF
BC856W Philips Semiconductors PNP General Purpose Transistors Scan PDF
BC856W,115 NXP Semiconductors PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
BC856W,135 NXP Semiconductors PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
BC856W-BC860W Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF

BC856W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
3BS transistor

Abstract: marking 3bs transistor 3bs 3bs marking code BL SOT323 3BS MARKING sot323 transistor marking BC858W BC856BW 3AS transistor
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W , -323 ORDERING INFORMATION Type No. Marking Package Code BC856W BC857W BC858W 3As/3Bs 3E/3F/3G , Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Value Units BC856W BC857W BC858W -80 -50 -30 V BC856W BC857W BC858W -65 -45 -30 V VEBO , BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W


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PDF BC856W/BC857W/BC858W 200mW) OT-323 BC856W BC857W BC858W 3BS transistor marking 3bs transistor 3bs 3bs marking code BL SOT323 3BS MARKING sot323 transistor marking BC858W BC856BW 3AS transistor
BC856CW

Abstract: BC856BW BC860AW BC856AW BC860BW BC859W BC858W BC857W BC856W BC860W
Text: BC856W ~BC860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching , Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80 50 30 30 50 V Collector Emitter Voltage BC856W BC857W BC858W BC859W BC860W Emitter Base Voltage -VCEO 65 45 30 30 45 V , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 04/01/2006 BC856W ~BC860W Characteristics , Base Voltage at -IC = 10 mA BC856W BC857W BC858W BC859W BC860W -VCBO V Collector Emitter


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PDF BC856W BC860W BC856W BC857W BC858W BC859W BC856CW BC856BW BC860AW BC856AW BC860BW BC859W BC858W BC857W BC860W
BC858W-A

Abstract: BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W
Text: 0.70 M 0.42+0.10 N 0.2 MIN USM Marking MARK SPEC TYPE BC856W-A BC856W-B BC857W-A BC857W-B , SEMICONDUCTOR TECHNICAL DATA BC856W /7W/8W EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC856W VcBO -80 V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W VcEO -65 V BC857W -45 BC858W -30 Emitter-Base Voltage BC856W Vebo -5 V BC857W -5 BC858W -5 Collector Current Ic -100 mA Emitter


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PDF BC856W/7W/8W BC846W/847W/848W. BC856W BC857W BC858W BC858W-A BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W
BC856BW

Abstract: BC856AW BC856W BC857AW BC857BW BC857CW BC857W BC858W BC856-W
Text: KEG SEMICONDUCTOR BC856W /7W/8W KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP , BC856W VcBO -80 V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W VcEO -65 V BC857W -45 BC858W -30 Emitter-Base Voltage BC856W Vebo -5 V BC857W -5 BC858W -5 Collector , Revision No : 1 KEC 1/3 BC856W /7W/8W ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST , (Note) BC856W hfe Vce=-5V, Ic=-2mA 125 - 475 BC857W 125 - 800 BC858W 125 - 800


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PDF BC856W/7W/8W BC846W/847W/848W. BC856W BC857W BC858W BC856BW BC856AW BC857AW BC857BW BC857CW BC857W BC858W BC856-W
2006 - BC856BW

Abstract: BC856AW BC858W BC858BW BC858AW BC857W BC857CW BC857BW BC857AW BC856W
Text: Voltage BC856W -80 BC857W -50 BC858W VCBO -30 V Collector-Emitter Voltage BC856W , Test conditions VCBO IC= -10A, IE=0 -30 BC856W -65 BC857W VCEO IC= -10mA, IB , UNIT V -50 BC858W Collector-emitter breakdown voltage MAX -80 BC856W BC857W MIN , Typical Characteristics BC856W ;BC857W;BC858W Jiangsu Changjiang Electronics Technology


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PDF OT-323 BC856AW BC857AW, BC858AW, OT-323 BC856W BC857W BC858W BC856BW BC858W BC858BW BC858AW BC857W BC857CW BC857BW BC857AW BC856W
transistor t4B

Abstract: aatj BC856BW MARKING H4 3F BC856AW BC856W 2447b BC857BW BC857W BC858W
Text: purpose transìstor BC856W ; BC857W; BC858W AMER PHILIPS/DISCRETE b7E ]> FEATURES • S- mini package , . MARKING CODES QUICK REFERENCE DATA BC856W : 3D BC856AW: 3A BC856BW: 3B BC857W: 3H BC857AW 3E , . MAX. UNIT ve« collector-emitter voltage VBE=1 V BC856W _ -80 V BC857W - -50 V BC858W - -30 V vceo collector-emitter voltage open base BC856W - -65 V BC857W - -45 V BC858W - -30 , transistor BC856W ; BC857W; BC858W N AMER PHILIPS/DISCRETE b?E ]> LIMITING VALUES SYMBOL PARAMETER


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PDF bbS3T31 2447b BC856W; BC857W; BC858W OT323 PINNING-SOT323 MBC870 BC856W: BC856AW: transistor t4B aatj BC856BW MARKING H4 3F BC856AW BC856W BC857BW BC857W BC858W
2011 - BC846W

Abstract: BC849W BC856AW BC856W BC857AW BC857W BC858W BC859W
Text: BC856W . BC859W BC856W . BC859W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2011-07-11 Power , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC856W BC857W BC858W BC859W , BC856W . BC859W Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VBEsat , kHz, f = 200 Hz BC856W . BC858W BC859W Thermal resistance junction to ambient air


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PDF BC856W BC859W OT-323 UL94V-0 BC857W BC858W BC846W BC849W BC856AW BC856W BC857AW BC857W BC858W BC859W
2010 - transistor 3bt

Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
Text: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon , JA BC857W 50 45 BC856W 80 65 UNITS V V V mA mA mA mW °C °C/W UNITS nA A nA V V V V V V V V V V pF pF , CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=30V VCB=30V, TA=150°C VEB=5.0V IC=10A (BC857W) IC=10A ( BC856W ) IC=10mA (BC857W) IC=10mA ( BC856W ) IE=10A IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=100mA, IB=5mA IC


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PDF BC856W BC857W OT-323 100MHz 200Hz BC856BW BC857BW BC856AW transistor 3bt marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor
BC856BW

Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP general purpose transistors BC856W , NUMBER MARKING CODE«1) BC856W 3D* BC857AW BC856AW 3A* BC857BW 2 3E* 3F , BC856W ; BC857W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , BC856W -8 0 V BC857W - -5 0 V BC856W - -6 5 V BC857W VcEO - - , Philips S em iconductors P roduct specification PNP general purpose transistors BC856W ; BC857W


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PDF BC856W; BC857W OT323 BC846W BC847W. BC856W BC857AW BC856AW BC857BW BC856BW BC856BW
General Purpose Transistors

Abstract: BC856BW EC marking PNP BC857W BC857CW BC857BW BC857AW BC856W BC856AW BC847W
Text: Philips Semiconductors Product specification PNP general purpose transistors BC856W ; BC857W , MARKING TYPE MARKING NUMBER CODEO) NUMBER CODE*1' BC856W 3D* BC857AW 3E* BC856AW 3 A* BC857BW 3F , BC856W ; BC857W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBO collector-base voltage open emitter BC856W - -80 V BC857W - -50 V VcEO collector-emitter voltage open base BC856W - -65 V BC857W - -45 V Vebo


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PDF BC856W; BC857W OT323 BC846W BC847W. BC856W BC857AW BC856AW BC857BW BC856BW General Purpose Transistors EC marking PNP BC857W BC857CW BC847W
2009 - BC846W

Abstract: BC857W BC857BW BC857AW BC856W BC856BW BC856AW BC848W BC847W BC858W
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W ; BC857W; BC858W PNP , Semiconductors Product data sheet BC856W ; BC857W; BC858W PNP general purpose transistors FEATURES , handbook, halfpage 3 MARKING TYPE NUMBER 1 MARKING CODE(1) 2 BC856W 3D* BC856AW , Product data sheet PNP general purpose transistors BC856W ; BC857W; BC858W LIMITING VALUES In , CONDITIONS MIN. MAX. UNIT open emitter BC856W -80 V BC857W - -50 V BC858W


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PDF M3D102 BC856W; BC857W; BC858W OT323 BC846W, BC847W BC846W BC857W BC857BW BC857AW BC856W BC856BW BC856AW BC848W BC858W
marking 3ft sot323

Abstract: BC856BW 3bt sot323 BC858W BC857W BC857AW BC856W BC856AW BC848W BC847W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W ; BC857W; BC858W PNP , transistors BC856W ; BC857W; BC858W PINNING FEATURES · Low current (max. 100 mA) PIN DESCRIPTION , MARKING TYPE NUMBER MARKING CODE TYPE NUMBER 1 MARKING CODE BC856W 3Dt BC857CW , voltage CONDITIONS MIN. MAX. UNIT open emitter BC856W - -80 V BC857W - -50 V - -30 V BC856W - -65 V BC857W - -45 V BC858W - -30


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PDF M3D187 BC856W; BC857W; BC858W OT323 BC846W, BC847W marking 3ft sot323 BC856BW 3bt sot323 BC858W BC857W BC857AW BC856W BC856AW BC848W
727 Transistor power values

Abstract: transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor BC856BW
Text: Philips Semiconductors Product specification PNP general purpose transistors BC856W , package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W , SYMBOL VcBO PARAMETER collector-base voltage BC856W BC857W BC858W open emitter CONDITIONS open , V UNIT VcEO collector-emitter voltage BC856W BC857W BC858W peak collector current total power dissipation DC current gain BC856W BC857W; BC858W V V V ICM Ptot h FE mA mW 125 125 lc


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PDF BC856W; BC857W; BC858W OT323 BC846W, BC847W BC848W. BC856W BC856AW BC856BW 727 Transistor power values transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor
3D smd marking

Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW BC856W-BC858W SOT SMD IC BC857BW BC856W BC857W 3f sot
Text: =200Hz *Pulse test tp=300µs, < 0.02 µ BC856W_BC858W Rev170210E Continental Device India Limited Data Sheet Page 2 of 4 BC856W , 857W, 858W SOT-323 Formed SMD Package BC856W_BC858W Rev170210E , IEBO MIN TYP BC856W_BC858W Rev170210E Continental Device India Limited Data Sheet , Fax + 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com BC856W_BC858W Rev170210E , SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking


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PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W 3D smd marking SMD Transistors 3f SMD IC ts 4141 BC856BW BC856W-BC858W SOT SMD IC BC857BW BC856W BC857W 3f sot
2008 - BC857W-B

Abstract: BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-C BC858W BC858W-A
Text: MARK SPEC TYPE BC856W-A BC856W-B BC857W-A BC857W-B BC857W-C BC858W-A BC858W-B , SEMICONDUCTOR BC856W /7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL , _ 0.42 + 0.10 0.10 MIN V 1. EMITTER -30 BC856W H L RATING C SYMBOL BC856W Collector-Base Voltage 0.65 0.15+0.1/-0.06 J K MAXIMUM RATING (Ta=25) CHARACTERISTIC , Collector-Emitter Voltage BC857W VCEO -45 BC858W V -30 BC856W Emitter-Base Voltage 3


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PDF BC856W/7W/8W BC857W BC858W BC856W BC846W/847W/848W. VC-10 BC857W-B BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-C BC858W BC858W-A
BC856BW

Abstract: No abstract text available
Text: Transistors IC SMD Type BC856W ,BC857W,BC858W Features Low current (max. 100 mA). Low , Symbol BC856W BC857W BC858W Unit Collector-base voltage VCBO -80 -50 -30 V , sales@twtysemi.com K/W 4008-318-123 1 of 2 Transistors IC SMD Type BC856W ,BC857W,BC858W , = -30 V; IE = 0 ICBO Collector cutoff current Min VEB = -5 V; IC = 0 BC856W 125 , 10 dB 0.02. hFE Classification TYPE BC856W BC856AW BC856BW Marking 3D 3A


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PDF BC856W BC857W BC858W BC856W BC857W BC856AW BC856BW BC856BW
BC856CW

Abstract: BC856BW
Text: Philips Semiconductors Product specification PNP general purpose transistor BC856W ; BC857W , SOT323 package. PINNING - SOT323 PIN 1 2 3 base emitter collector DESCRIPTION MARKING CODES BC856W , 3K 3L QUICK REFERENCE DATA SYMBOL ^CEX PARAMETER coliector-emitter voltage BC856W BC857W BC858W coliector-emitter voltage BC856W BC857W BC858W peak collector current total power dissipation DC , specification PNP general purpose transistor BC856W ; BC857W; BC858W LIMITING VALUES In accordance with


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PDF BC856W; BC857W; BC858W OT323 BC856W: BC856AW BC856BW BC857W: BC857AW BC856CW
1997 - BC857BW-3FT

Abstract: BC856BW TRANSISTOR 3gt BC847W marking 3ft sot323 BC856AW BC856W BC857AW BC857W BC858W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W ; BC857W; BC858W PNP , transistors BC856W ; BC857W; BC858W PINNING FEATURES · Low current (max. 100 mA) PIN DESCRIPTION , MARKING TYPE NUMBER MARKING CODE TYPE NUMBER 1 MARKING CODE BC856W 3Dt BC857CW , voltage CONDITIONS MIN. MAX. UNIT open emitter BC856W - -80 V BC857W - -50 V - -30 V BC856W - -65 V BC857W - -45 V BC858W - -30


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PDF M3D187 BC856W; BC857W; BC858W OT323 BC846W, BC847W BC857BW-3FT BC856BW TRANSISTOR 3gt marking 3ft sot323 BC856AW BC856W BC857AW BC857W BC858W
BC856BW

Abstract: No abstract text available
Text: VEB=5V, IC=0 100 nA IEBO MIN TYP BC856W_BC858W Rev170210E Continental Device , dB Rs=2kΩ, f=1KHz, B=200Hz *Pulse test tp=300µs, δ < 0.02 µ BC856W_BC858W Rev170210E , Package BC856W_BC858W Rev170210E Continental Device India Limited Data Sheet Page 3 of 4 , email@cdil.com www.cdilsemi.com BC856W_BC858W Rev170210E Continental Device India Limited Data Sheet , SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking


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PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W BC856BW
2006 - BC856BW

Abstract: No abstract text available
Text: Voltage BC856W -80 BC857W -50 BC858W VCBO -30 V Collector-Emitter Voltage BC856W , breakdown voltage Test conditions VCBO IC= -10μA, IE=0 -30 BC856W -65 BC857W VCEO , -80 BC856W BC857W Min 800 Collector-emitter saturation voltage VCE(sat) IC , hFE —— IC 500 hFE -6 BC856W Ta=25℃ 200 -6uA -4uA -1 100 IB


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PDF OT-323 BC856AW, BC857AW, BC858AW, OT-323 BC856W BC857W BC858W BC856BW
Not Available

Abstract: No abstract text available
Text: Name □ °C MARK SPEC TYPE BC856W-A BC856W-B BC857W-A BC857W-B BC857W-C , SEMICONDUCTOR TECHNICAL DATA BC856W /7W/8W EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , SYMBOL RATING BC856W Collector-Base Voltage BC857W 0 .3 + 0 .1 0 / - 0 . 05 E 2 .1 0 , / —0 .0 6 J V K 1 .3 0 0 .0 0 - 0 .1 0 L -30 BC856W Collector-Emitter Voltage BC857W -65 0 .2 MIN 2 . BA SE V 3 . COLLECTOR -30 BC856W 0 .4 2 + 0 .1


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PDF BC856W/7W/8W BC846W/847W/848W. BC856W BC857W 0-3010/xA
2002 - BC856W

Abstract: BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W BC858W-A
Text: TYPE BC856W-A BC856W-B BC857W-A BC857W-B BC857W-C BC858W-A BC858W-B BC858W-C , SEMICONDUCTOR BC856W /7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL , 0.15+0.1/-0.06 J SYMBOL RATING BC856W BC857W 0.3+0.10/-0.05 _ 2.10 + 0.20 UNIT -80 , . EMITTER -30 BC856W H 1.30 K L CHARACTERISTIC Collector-Base Voltage D E 3 , Collector-Emitter Voltage BC857W VCEO -45 BC858W V -30 BC856W Emitter-Base Voltage 3


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PDF BC856W/7W/8W BC856W BC857W BC858W BC846W/847W/848W. BC-10 BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W BC858W-A
BC856CW

Abstract: BC856BW BC856AW BC860BW BC860AW BC859W BC858W BC857W BC856W BC860W
Text: BC856W ~BC860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching , Unit Collector Base Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80 50 30 30 50 V Collector Emitter Voltage BC856W BC857W BC858W BC859W BC860W Emitter Base Voltage , : 30/12/2005 BC856W ~BC860W Characteristics at Ta =25 OC Parameter Symbol Min. Max , at -VCE = 5 V, -IC = 2 mA Collector Base Voltage at -IC = 10 mA BC856W BC857W BC858W BC859W


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PDF BC856W BC860W OT-323 BC856W BC857W BC858W BC859W BC856CW BC856BW BC856AW BC860BW BC860AW BC859W BC858W BC857W BC860W
2006 - transistor 3bt

Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
Text: BC856W SERIES BC857W SERIES SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon , . BC856W 80 65 5.0 100 200 200 275 -65 to +150 455 UNITS V V V mA mA mA mW °C °C/W ELECTRICAL , =150°C IEBO VEB=5.0V BVCBO IC=10µA (BC857W) 50 BVCBO IC=10µA ( BC856W ) 80 BVCEO IC=10mA (BC857W) 45 BVCEO IC=10mA ( BC856W ) 65 BVEBO IE=10A 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=100mA, IB


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PDF BC856W BC857W OT-323 BC857W 200Hz BC856AW BC857AW BC856BW transistor 3bt marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor
MARKING 3F TRANSISTOR

Abstract: No abstract text available
Text: . PINNING PIN 1 2 3 APPLICATIONS · General purpose switching and amplification. base BC856W ; BC857W , : BC846W and BC847W. 3 3 MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W Note 1. * = - : Made in , 134). SYMBOL VcBO BC856W ; BC857W PARAMETER collector-base voltage BC856W BC857W CONDITIONS , collector-emitter voltage BC856W BC857W -6 5 -4 5 V V V V ebo lc IcM I bm emitter-base voltage collector , BC856W ; BC857W VALUE 625 UNIT K/W CHARACTERISTICS T amb = 25 °C unless otherwise specified


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PDF BC856W; BC857W OT323 BC846W BC847W. BC856W BC856AW BC856BW BC857W OT323) MARKING 3F TRANSISTOR
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