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BC850BWH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
BC850BE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC 850B E6327 Infineon Technologies AG Rochester Electronics 36,000 $0.02 $0.02
BC850B Diotec Semiconductor AG TME Electronic Components 15,860 $0.03 $0.01
BC850B Nexperia Farnell element14 0 £0.18 £0.04
BC850B Nexperia element14 Asia-Pacific 150 $0.12 $0.10
BC850B Nexperia element14 Asia-Pacific 150 $0.12 $0.10
BC850B,215 Nexperia element14 Asia-Pacific 0 $0.02 $0.02
BC850B,215 Nexperia Avnet 0 $0.02 $0.01
BC850B,215 Nexperia Avnet - -
BC850B,215 Nexperia Chip1Stop 778 $0.06 $0.03
BC850B,215 Nexperia Future Electronics 0 $0.03 $0.03
BC850B,235 Nexperia Avnet 0 $0.02 $0.01
BC850B215 NXP Semiconductors Rochester Electronics 17,500 $0.04 $0.03
BC850BE6327 Infineon Technologies AG TME Electronic Components 6,799 $0.03 $0.02
BC850BE6327 Infineon Technologies AG Rochester Electronics 29,665 $0.04 $0.03
BC850BE6327HTSA1 Infineon Technologies AG Future Electronics 0 $0.02 $0.02
BC850BE6327HTSA1 International Rectifier Rochester Electronics 18,000 $0.02 $0.02
BC850BE6327HTSA1 Infineon Technologies AG Avnet 33,000 $0.02 $0.01
BC850BE6327HTSA1 Infineon Technologies AG Rochester Electronics 147,000 $0.04 $0.03
BC850BLT1 ON Semiconductor Rochester Electronics 39,000 $0.02 $0.02
BC850BLT1 ON Semiconductor ComS.I.T. - -
BC850BLT1G ON Semiconductor Avnet 15,000 $0.01 $0.01
BC850BLT1G ON Semiconductor Allied Electronics & Automation 0 $0.04 $0.03
BC850BLT1G ON SEMICONDUCTOR New Advantage Corporation 96,000 $0.02 $0.02
BC850BLT1G ON Semiconductor Farnell element14 21,951 £0.08 £0.02
BC850BLT1G ON Semiconductor Rochester Electronics 423,000 $0.02 $0.02
BC850BLT1G ON Semiconductor Future Electronics 0 $0.01 $0.01
BC850BLT1G ON Semiconductor Avnet 0 $0.02 $0.01
BC850BLT1G ON Semiconductor RS Components 562,500 £0.03 £0.03
BC850BLT1G ON Semiconductor RS Components 39,750 £0.03 £0.03
BC850BLT1G ON Semiconductor element14 Asia-Pacific 22,021 $0.08 $0.01
BC850BLT1G ON Semiconductor element14 Asia-Pacific 22,021 $0.08 $0.01
BC850BLT1G ON Semiconductor TME Electronic Components 4,577 $0.03 $0.01
BC850BLT1G ON Semiconductor Chip1Stop 5,794 $0.04 $0.04
BC850BLT1G ON Semiconductor Chip1Stop 63,000 $0.02 $0.01
BC850BLT1G ON Semiconductor ComS.I.T. - -
BC850BLT1G ON Semiconductor element14 Asia-Pacific 0 $0.03 $0.01
BC850BLT1G ON Semiconductor Newark element14 22,021 $0.11 $0.02
BC850BLT1G ON Semiconductor Schukat electronic 12,500 €0.02 €0.01
BC850BMTF Fairchild Semiconductor Corporation Rochester Electronics 111,000 $0.09 $0.07
BC850BRTKP KEC ComS.I.T. - -
BC850BW NXP Semiconductors ComS.I.T. - -
BC850BW Nexperia element14 Asia-Pacific 1,427 $0.13 $0.02
BC850BW Nexperia Farnell element14 1,289 £0.13 £0.03
BC850BW,115 Nexperia Chip1Stop 1,000 $0.06 $0.03
BC850BW,115 Nexperia Avnet 0 $0.02 $0.02
BC850BW,115 Nexperia Avnet 0 $0.03 $0.02
BC850BW,135 Nexperia Avnet 0 $0.01 $0.01
BC850BWE6327 Infineon Technologies AG Rochester Electronics 39,000 $0.02 $0.02
BC850BWH6327 Infineon Technologies AG TME Electronic Components 765 $0.03 $0.02
BC850BWH6327XTSA1 Infineon Technologies AG RS Components 400 £0.02 £0.01
BC850BWH6327XTSA1 Infineon Technologies AG RS Components 20,000 £0.03 £0.01
BC850BWH6327XTSA1 Infineon Technologies AG Avnet 0 $0.02 $0.02
NSVBC850BLT1G ON Semiconductor Avnet 0 $0.03 $0.03

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BC850B datasheet (57)

Part Manufacturer Description Type PDF
BC850B Continental Device India Silicon Planar Eitaxial Transistors, SOT-23 Original PDF
BC850B Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC850B E-Tech Electronics General Purpose Transistors Original PDF
BC850B Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BC850B Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
BC850B Infineon Technologies SOT23 package Original PDF
BC850B Infineon Technologies Low Noise Transistors; Package: PG-SOT23-3; Polarity: NPN; V<sub>CEO</sub> (max): 45.0 V; P<sub>tot</sub> (max): 330.0 mW; h<sub>FE</sub> (min): 200.0 - 450.0; I<sub>C</sub>: 2.0 mA; Original PDF
BC850B Philips Semiconductors NPN general purpose transistors Original PDF
BC850B Siemens NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Original PDF
BC850B Siemens NPN Silicon AF Transistor Original PDF
BC850B Korea Electronics NPN transistor for general purpose and switching applications Scan PDF
BC850B Motorola European Master Selection Guide 1986 Scan PDF
BC850B Others Transistor Shortform Datasheet & Cross References Scan PDF
BC850B Others Catalog Scans - Shortform Datasheet Scan PDF
BC850B National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan PDF
BC850-B National Semiconductor Bipolar Pro Electron Series Scan PDF
BC850B STMicroelectronics Shortform Data Book 1988 Scan PDF
BC850B Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
BC850B,185 NXP Semiconductors BC850B - BC850B - NPN general purpose transistors Original PDF
BC850B,215 NXP Semiconductors NPN general purpose transistors - Complement: BC860B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF

BC850B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - BC10 npn transistor

Abstract:
Text: =2B; BC849C=2C; BC850B=2F ; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A


Original
PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850 BC10 npn transistor transistor bc 556 BC849C-2C C8050 BC850B/C bc848 NPN transistor BC850B BC847A BC848A BC848C
2001 - C8050

Abstract:
Text: =2B; BC849C=2C; BC850B=2F ; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A


Original
PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850 C8050
BC8468

Abstract:
Text: =1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B; BC84902C; BC850B=2F : BC850C , , BW=200Hz) BC849B.C BC850B.C NF - 10 40 dB IH*46A!B-B( 847AJIIC BC848A/B.'<:-BC849B.'(: BC850B /C 02 , 1 BCK46AVB-BC847A/B/C BC848A/B/C-BC849B/C BC850B /C General Purpose Transistor PNP Silicon , ;B/C-BC849B/C BC850B /C Electrical Characteristics BC347A.B.C BC850BC BC848A.B.C BC849B.C Collector-Emitter Breakdown VoltageBC846A.B (IC


OCR Scan
PDF BCK46AVB-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C BC846 BC847, BC850 BC848, BC849 BC8468 BC347C BCS46A BC347 pnp 400V BC8508 BCS46B BCS48 BC347A
2FP TRANSISTOR

Abstract:
Text: general purpose transistors BC849; BC850 M BH724 BC849B; BC850B. Fig.2 DC current gain , BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B BC850C MARKING CODE , power dissipation DC current gain BC849B; BC850B ; BC849C; BC850C 290 520 - ICM Plot hFE 200 420 , current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849; BC850 BC849B; BC850B BC849C


OCR Scan
PDF BC849; BC850 BC859 BC860. BC849 BC849B BC849C BC850 BC850B BC850C 2FP TRANSISTOR 2gp Transistor BCB50C BCB50 marking 2Fp BC849C marking 2gp
BAV90

Abstract:
Text: -40 BC808-40 BC550B BC850B BC109B BC849B BC337 BC817 BC550C BC850C BCF32 BOX 19 BC556 BC856 BC109C , BCH61 BD135-10 BCX54-1Û BC557A BC857A BCX79 BCX71 BD135-16 BCX54-16 BCW69 BCY56 BC850B BD136 BCX51 t , BC850B BD 140 BCX53 BC559C BC859C BCX70H BD140-6 BCX53-G BC560 BC860 BCY59-IX BC850B BD140-10 BCX53 , BSR40 2N2368 BSV52 2N2369 BSV52 2N2369A BSV52 2N2483 BC850B 2N2484 BC850B /C 2N894A


OCR Scan
PDF 0D12DEÃ BA243 BC146/02 BC849B/C BC338 BC818 BA314 BAS17 BCF32/33 BCX20 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 2N4858 smd BF980 BFG65 BC547 smd
2004 - MARKING 358 sot-23

Abstract:
Text: Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C Collector - Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B ,C BC848A,B,C, BC849B,C , BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE - - - , 770 V V mV - BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B ,C BC848A,B , Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B ,C fT Cobo NF 100 - - - - - - - -


Original
PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 Code sot-23 on semiconductor 359 marking sot23 sot-23 body marking 02
2001 - marking 1F SOT-23

Abstract:
Text: BC850BLT1 BC850CLT1 DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = , Typ Max Unit OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage BC846A,B BC847A,B,C, BC850B ,C , ) BC847A,B,C BC850B ,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage (IC = 10 mA) Emitter­Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) BC846A,B BC847A,B,C, BC850B ,C BC848A,B


Original
PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 marking 1F SOT-23
BC846BLT1

Abstract:
Text: CLT1 thru BC850BLT1 ,CLT1 3 1 2 CASE 318­08, STYLE 6 Symbol 265 240 to 265 SOT­23 (TO , OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B , ) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B ,C Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA =


Original
PDF BC846ALT1 BC847ALT1 BC846 BC847 BC850 BC848 BC849 BC850BLT1 236AB) BC846ALT1, BC846BLT1 BC846 BC850 BC849 BC848C BC848 BC847BLT1 BC847
2001 - Not Available

Abstract:
Text: =2B; BC849C=2C; BC850B=2F ; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A


Original
PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850
2001 - Not Available

Abstract:
Text: ; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F ; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 , Typ Max Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA , (IC=10 µA ,VEB=0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C , BC847A,B,C BC850B.C BC848A,B,C BC849B,C 6.0 6.0 5.0 - - V - - 15 5.0 nA mA


Original
PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850
2012 - Not Available

Abstract:
Text: BC846A,B BC847A,B,C BC850B ,C V (BR)CBO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B ,C V (BR)CEO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B ,C V (BR)EBO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B ,C , , BC847B, BC848B BC849B, BC850B BC847C, BC848C, BC849C, BC850C I c = 10mA, I B = 0.5mA I c = 100mA, I B = , 10mA, V CE = 5.0V, f = 100MHz V CB = 10V, f = 1.0MHz BC846A,B BC847A,B,C BC848A,B,C BC849B,C BC850B ,C , Type number BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C Marking


Original
PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs
2009 - bc849

Abstract:
Text: 10−1 1 102 10 IC (mA) 103 BC849B; BC850B. Fig.2 DC current gain; typical values , MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , BC849C BC850B BC850C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors Product data sheet , 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see


Original
PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C bc849 bc850c
2010 - BC846ALT1G

Abstract:
Text: Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V , = 10 mA, VEB = 0) BC847A,B,C BC850B ,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 - - - - - - V Collector -Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B ,C , Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 , , BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C


Original
PDF BC846ALT1G BC846 BC847, BC850 BC848, BC849 SOT-23 marking 016 BC849BLT1G BC849 BC848 BC847CLT1G bc847blt1g BC847A BC847 BC846A
On semiconductor date Code sot-23

Abstract:
Text: Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 , ) BC847A,B,C BC850B ,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 - - - - - - V Collector -Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V , ) BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 - - - - - - , BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C


Original
PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 On semiconductor date Code sot-23 sot-23 body marking C 1 sot-23 body marking A 4 BC847BLT1G MARKING A1 SOT-23 sot-23 body marking A c SOT-23 marking 2F Code sot-23 on semiconductor marking code SOT-23 2F MARKING 1L SOT-23
2001 - BC846ALT1

Abstract:
Text: Resistance Solderability CLT1 thru BC850BLT1 ,CLT1 3 1 2 CASE 318­08, STYLE 6 Symbol 265 240 , (IC = 10 mA) BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C Collector­Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B ,C Collector Cutoff Current


Original
PDF BC846ALT1 BC847ALT1 BC846 BC847 BC850 BC848 BC849 BC850BLT1 BC846ALT1, BC847ALT1, BC846BLT1 b m34 w BC850 BC849 BC848 BC847BLT1 BC847 BC846
2004 - Transistors

Abstract:
Text: ; BC850B. Fig.2 DC current gain; typical values. MBH725 600 handbook, full pagewidth VCE = 5 , MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , BC849C BC850B BC850C 2004 Jan 16 2 VERSION SOT23 Philips Semiconductors Product , and 3 - 240 - - 450 - 200 290 450 420 520 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849C


Original
PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C Transistors BC849 BC850 BC850C BC860 BC850B BC850 BC849C BC849B BC849
BC846BLT1

Abstract:
Text: Transistors NPN Silicon BASE 2 EMITTER MAXIMUM RATINGS BC846ALT1 ,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1 , Voltage BC846A,B v(BR)CEO 65 — — V (IC = 10 mA) BC847A,B,C, BC850B ,C 45 — — BC848A,B,C, BC849B , 0) BC847A,B,C, BC850B ,C 50 — — BC848A,B,C, BC849B,C 30 — — Collector-Base Breakdown Voltage BC846A,B v(BR)CBO 80 — — V Cc = 10 nA) BC847A,B,C, BC850B ,C 50 — — BC848A,B,C, BC849B,C , 6.0 — — BC848A,B,C, BC849B,C, BC850B ,C 5.0 — — Collector Cutoff Current (Vcb = 30 V) 'CBO


OCR Scan
PDF BC846ALT1/D BC846ALT1 BC847ALT1, BC850BLT1 BC846, BC847 BC848 BC846 BC850 BC846BLT1 BC849 BC847BLT1 BC847ALT1 BC847 SOT23 BC846ALT1
bc327 smd

Abstract:
Text: BC849B BC849C BC850 BC850B BC850C BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BCW29 , -16 BCX53 BCP53 BCX53-10 BCP53-10 BCX53-16 BCP53-16 BCW60 BCX70 BCW61 BCX71 BC850B BC636-10 BC636 , 2N3904 2N3906 2N4030 2N4031 2N4032 SMD BC850B /C PMBT2907 PMBT2907A PMBT2907 PMBT2907A BSR43 BSP43 , PMBT2222A BSR40 PMBT2369 PMBT2369A BC850B February 1995 39


OCR Scan
PDF BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd BC640 smd bc107 smd BC547 smd 2n4401 smd bc558 SMD BC639 smd
2005 - transistor 1f sot-23

Abstract:
Text: , BC850B ,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 - - - - - - V Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B ,C BC848A,B,C, BC849B,C V(BR)CES , BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 - - - - - - V Emitter -Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C , , BC850B BC847C, BC848C, BC849C, BC850C Collector -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA


Original
PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 transistor 1f sot-23 transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 marking codes transistors a1 sot-23 BC850CLT1G marking codes transistors sot-23 MARKING bc847 SOT-23 BC847BLT1G
2001 - BC846BLT1

Abstract:
Text: °C Derate above 25°C mW/°C BC850BLT1 Thermal Resistance, Junction to Ambient (Note 1.) 1.8 , = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G 1. FR­5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 , Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 ­ , ,B,C BC850B ,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 ­ ­ ­ ­ ­ ­ V OFF CHARACTERISTICS Collector­Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B ,C BC848A,B,C


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PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846BLT1 2f bc850 BC849 BC847ALT1 BC846BLT3 BC846ALT3 BC846
1997 - BC846ALT1

Abstract:
Text: Transistors COLLECTOR 3 NPN Silicon BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru 1 BASE BC850BLT1 , Collector ­ Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C , BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 , ,B,C, BC850B ,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 - - - - - - V Emitter ­ Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C BC848A,B,C, BC849B,C, BC850B ,C


Original
PDF BC846ALT1/D BC846ALT1 BC847ALT1, BC850BLT1 BC846, BC847 BC848 BC846 BC847 BC850 BC846 BC850 BC849 BC847ALT1 BC846BLT1 BC846BLT
smd transistor 2f

Abstract:
Text: current gain IEBO BC849B; BC850B BC849C; BC850C DC current gain Unit 15 nA IE = 0 , BC849B; BC850B Typ 200 290 450 420 520 800 IC = 10 mA; IB = 0.5 mA 90 250 , TYPE BC849B BC849C BC850B BC850C Marking 2B 2C 2F 2G www.kexin.com.cn


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PDF BC849, BC850 OT-23 BC849B BC849C BC850B BC850C smd transistor 2f 2f npn smd transistor SMD TRANSISTOR MARKING 2c smd transistor 2g 2f smd transistor smd 2f smd TRANSISTOR marking 2F bc850c smd transistor SMD 2f BC849C
2011 - 1G t 90 SOT-23

Abstract:
Text: Voltage BC846A, B, SBC846A, B BC847A, B, C, BC850B , C, SBC847C (IC = 10 mA) BC848A, B, C, BC849B, C, SBC848B Collector - Emitter Breakdown Voltage BC846A, B (IC = 10 mA, VEB = 0) BC847A, B, C BC850B , C , , BC848B, BC849B, BC850B , SBC846B, SBC848B BC847C, BC848C, BC849C, BC850C, SBC847C Collector - Emitter , , SBC848B BC849B,C, BC850B ,C fT Cobo NF - - - - 10 4.0 100 - - - - 4.5 MHz pF dB VCE(sat) VBE(sat) VBE(on , 0.6 - - 700 770 V V mV - BC846A, B, SBC846A, B BC847A, B, C, BC850B , C, SBC847C BC848A, B, C, BC849B


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PDF BC846ALT1G SBC846ALT1G AEC-Q101 BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, 1G t 90 SOT-23 bc847blt1g BC850BLT1G marking 1a SBC846ALT1G SERIES SBC846B SBC847BLT1 SBC847C
Not Available

Abstract:
Text: ; BC850B Testconditons Min nA 5 ìA 100 nA 240 450 hFE BC849B; BC850B Typ , TYPE BC849B BC849C BC850B BC850C Marking 2B 2C 2F 2G http


Original
PDF BC849, BC850 OT-23 BC849B BC849C BC850B BC850C
2009 - BC850C

Abstract:
Text: 5 V hFE 200 100 0 10-2 10-1 1 102 10 IC (mA) 103 BC849B; BC850B. , MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , BC849C BC850B BC850C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors Product data sheet , 3 - 240 - - 450 - 200 290 450 420 520 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849C


Original
PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C BC850C 2F PNP SOT23 BC849C BC850B bc850 nxp BC850 BC849B BC849 NXP BC849B
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