The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
BC848CW-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
BC848CT116 ROHM Semiconductor Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SST3, 3 PIN
BC848BE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
BC848CWH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
BC848BL3E6327XTMA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, TSLP-3-1, 3 PIN
BC848AE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

BC848 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - marking CODE 1BS

Abstract: BC846 Infineon NA MARKING SOT23 BC846-BC850 NPN BC846B SOT23 BC8488 BC847b infineon BC846B E6327 BC846B BC846A
Text: -20-2002 BC846.BC850 Maximum Ratings Parameter Symbol BC846 BC847 BC848 BC850 Unit BC849 , - - BC848 /849 30 - - BC846 80 - - BC847/850 50 - - BC848 , = 0 V V(BR)CES BC846 80 - - BC847/850 50 - - BC848 /849 30 - - BC846/847 6 - - BC848 -850 5 - - ICBO - - 15 nA ICBO - , 200 µA, VCE = 5 V, RS = 2 k , BC849 f = 1 kHz, BC850 f = 200 Hz Equivalent


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PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A marking CODE 1BS BC846 Infineon NA MARKING SOT23 BC846-BC850 NPN BC846B SOT23 BC8488 BC847b infineon BC846B E6327 BC846B BC846A
2009 - BC846 Infineon

Abstract: top marking 3c sot23 BC850 BC847B BC847A bc847 infineon sot23 BC846BW BC846B BC846A BC846
Text: Value Unit V BC846. 65 BC847., BC850. 45 BC848 ., BC849. 30 Collector-emitter voltage VCES BC846. 80 BC847., BC850. 50 BC848 ., BC849. 30 Collector-base voltage VCBO BC846. 80 BC847., BC850. 50 BC848 ., BC849. 30 Emitter-base voltage VEBO BC846. 6 BC847., BC850. 6 BC848 ., BC849. 6 , ., BC850. 45 - - IC = 10 mA, IB = 0 , BC848 ., BC849. 30 - - IC = 10 µA, IE =


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PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon top marking 3c sot23 BC850 BC847B BC847A bc847 infineon sot23 BC846BW BC846B BC846A BC846
2004 - BC8488

Abstract: BC846 Infineon BC850C INFINEON
Text: 100 200 200 200 330 150 -65 . 150 BC848 BC849 30 30 30 5 Unit V mA mA mW °C Junction , 25°C, unless otherwise specified. V 65 45 30 - BC846 BC847/850 BC848 /849 Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846 BC847/850 BC848 /849 V(BR)CBO 80 50 30 1For calculation of R , Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846 BC847/850 BC848 /849 Emitter-base , 450 800 hFE 140 250 480 ICBO 5 BC846/847 BC848 -850 ICBO V(BR)EBO 6 5 15 V(BR)CES 80 50 30 typ. max


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PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 VPS05161 BC846A BC846B BC8488 BC846 Infineon BC850C INFINEON
1997 - transistor 1fp

Abstract: transistor 1Bp BC848 1FP transistor BC847 1Bp transistor BC846 NPN BC846B SOT23 BC847A 1Lp marking
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847; BC848 NPN general , transistors BC846; BC847; BC848 FEATURES PINNING · Low current (max. 100 mA) PIN · Low , MARKING CODE TYPE NUMBER 1 MARKING CODE BC846 1Dp BC847C 1Ap BC848 1Bp , . MAX. UNIT open emitter BC846 80 V - 50 V BC848 - 30 V BC846 - 65 V BC847 - 45 V BC848 VCEO - BC847 - 30 V


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PDF M3D088 BC846; BC847; BC848 BC856; BC857; BC858. transistor 1fp transistor 1Bp BC848 1FP transistor BC847 1Bp transistor BC846 NPN BC846B SOT23 BC847A 1Lp marking
2004 - BC8488

Abstract: H12E BC848 equivalent 1bs sot323
Text: BC846W BC847/850W BC848 /849W 105 Values typ. max. K/W Electrical Characteristics at TA = 25 , voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848 /849W V(BR)CBO 80 50 30 1For calculation of R , Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846W BC847/850W BC848 /849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848 -850W - 15 5 nA µA - Emitter-base , Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200


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PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW BC846BW BC8488 H12E BC848 equivalent 1bs sot323
2009 - top marking 1B sot23

Abstract: top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23
Text: . BC848 ., BC849. Collector-emitter voltage BC847., BC850. BC848 ., BC849. Collector-base voltage BC847., BC850. BC848 ., BC849. Emitter-base voltage BC847., BC850. BC848 ., BC849 , Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC847., BC850. IC = 10 mA, IB = 0 , BC848 , = 0 , BC847., BC850. IC = 10 µA, IE = 0 , BC848 ., BC849. 50 30 V(BR)EBO ICBO , . Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 . 50 Hz , BC850. Vn 0.135 µV F h22e 18


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PDF BC847. -BC850. BC857. -BC860. Q1011) 1BC847BL3 BC847A BC847B BC847BL3* BC847BW top marking 1B sot23 top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23
2007 - bc8468

Abstract: BC847 smd BC846 SMD IC ts 4141 BC847C smd CDIL BC848 1g smd sot23 smd marking 1F 6 PIN BC846B BC846A
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 P IN CONFIGURATION (NPN) 1 = BASE 2 = , =1F BC847C=1G BC848 =1M BC848A=1J BC848B=1K BC848C=1L For use in Driver Stages of Audio Amplifier in , VCEO 65 Collector Emitter Voltage BC847 50 50 BC848 30 30 45 30 6 5 UNITS V , BC846, BC847, BC848 P IN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed , =2mA, VCE=5V BC846 BC847/ BC848 BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C IE=ie=0, VCB


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PDF BC846, BC847, BC848 OT-23 BC846 BC846A BC846B BC847 BC847A BC847B bc8468 BC847 smd BC846 SMD IC ts 4141 BC847C smd CDIL BC848 1g smd sot23 smd marking 1F 6 PIN
2007 - BC846 Infineon

Abstract: BC847BL3 bc846 base resistance for SOT23 BC 945 marking 2Gs BC847BF marking 1F SOT323 marking 1Gs BC 945 p
Text: ., BC850. 45 BC848 ., BC849. 30 Collector-emitter voltage VCES BC846. 80 BC847., BC850. 50 BC848 ., BC849. 30 Collector-base voltage VCBO BC846. 80 BC847., BC850. 50 BC848 ., BC849. 30 Emitter-base voltage VEBO BC846. 6 BC847., BC850. 6 BC848 ., BC849. 6 Collector current IC 100 Peak collector , 0 , BC848 ., BC849. 30 - - IC = 10 µA, IE = 0 , BC846. 80 - - IC = 10


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PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon BC847BL3 bc846 base resistance for SOT23 BC 945 marking 2Gs BC847BF marking 1F SOT323 marking 1Gs BC 945 p
1995 - marking 1E

Abstract: BC848
Text: BC847 BC848 SMALL SIGNAL NPN TRANSISTORS Type BC847A BC847B BC848A BC848B s Marking 1E 1F 1J , Value BC848 30 30 30 5 V V V V A A A A mW o o Uni t C C March 1996 1/5 BC847/ BC848 , Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A for BC847 for BC848 I C = 10 µ A for BC847 for BC848 I C = 2 mA for BC847 for BC848 I C = 10 µ A for BC847 for BC848 I C = 10 , µs, duty cycle 2 % 2/5 BC847/ BC848 ELECTRICAL CHARACTERISTICS (Continued) Symb ol h i e


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PDF BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 marking 1E BC848
2005 - MARKING CODE 21E SOT323

Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
Text: . Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848 /849W V(BR)CEO V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848 , = 10 µA, VBE = 0 BC846W BC847/850W BC848 /849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848 -850W - 15 5 nA µA - Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector , , VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k


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PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW MARKING CODE 21E SOT323 sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON ( N PN ) 1 = BASE , =1E BC847B=1F BC847C=1G BC848 =1M BC848A=1J BC848B=1K BC848C=1L For use in Driver Stages of Audio , =0V) VCES 80 BC847 50 50 BC848 30 30 UNITS V V Collector Emitter Voltage VCEO 65 , TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON ( N PN ) 1 = BASE 2 = EMITTER 3 = COLLECTOR , =2mA, VCE=5V BC846 BC847/ BC848 BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C IE=ie=0, VCB


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PDF BC846, BC847, BC848 OT-23 BC846 BC846A BC846B BC847 BC847A BC847B
2005 - MARKING CODE 21E SOT323

Abstract: sot323 marking code A.C BC8488
Text: . Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848 /849W V(BR)CEO V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848 , = 10 µA, VBE = 0 BC846W BC847/850W BC848 /849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848 -850W - 15 5 nA µA - Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector , , VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k


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PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW MARKING CODE 21E SOT323 sot323 marking code A.C BC8488
2007 - 1B marking

Abstract: No abstract text available
Text: voltage BC846. BC847., BC850. BC848 ., BC849. Collector-emitter voltage BC846. BC847., BC850. BC848 ., BC849. Collector-base voltage BC846. BC847., BC850. BC848 ., BC849. Emitter-base voltage BC846. BC847., BC850. BC848 ., BC849. Collector current Peak collector current Total , . IC = 10 mA, IB = 0 , BC848 ., BC849. Unit V 65 45 30 V(BR)CBO - - , µA, IE = 0 , BC848 ., BC849. 80 50 30 V(BR)EBO ICBO 6 µA Emitter-base breakdown


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PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW BC847A 1B marking
2002 - BC847 philips

Abstract: bc847c bc847b
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847; BC848 NPN general , Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 PINNING , specification NPN general purpose transistors BC846; BC847; BC848 LIMITING VALUES In accordance with , CONDITIONS MIN. MAX. UNIT open emitter BC846 V - 50 V BC848 - 30 V BC846 - 65 V BC847 - 45 V BC848 - 30 V BC846; BC847 - 6 V


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PDF M3D088 BC846; BC847; BC848 BC856, BC857 BC858. BC847 philips bc847c bc847b
2011 - bc846

Abstract: BC847
Text: BC846, SBC846, BC847, SBC847, BC848 Series General Purpose Transistors NPN Silicon http , Symbol Collector-Emitter Voltage BC846, SBC846 BC847, SBC847 BC848 Collector-Base Voltage BC846, SBC846 BC847, SBC847 BC848 Unit VCBO Emitter-Base Voltage BC846, SBC846 BC847, SBC847 BC848 , , 2011 − Rev. 8 1 Publication Order Number: BC846AWT1/D BC846, SBC846, BC847, SBC847, BC848 , ) BC846, SBC846 Series BC847, SBC847 Series BC848 Series V(BR)CEO 65 45 30 − − − â


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PDF BC846, SBC846, BC847, SBC847, BC848 70/SOTâ SBC846 SBC847 bc846 BC847
2010 - BC847

Abstract: BC848 marking code MS SOT323 BC846BWT1G BC848A BC847B BC847A BC846B BC846A BC846
Text: BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http://onsemi.com , MAXIMUM RATINGS 3 Rating Symbol Collector-Emitter Voltage BC846 BC847 BC848 Collector-Base Voltage BC846 BC847 BC848 Emitter-Base Voltage BC846 BC847 BC848 Collector Current - Continuous , Publication Order Number: BC846AWT1/D BC846, BC847, BC848 Series ELECTRICAL CHARACTERISTICS (TA = 25 , Collector -Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CEO


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PDF BC846, BC847, BC848 SC-70/SOT-323 BC846 BC847 BC847 BC848 marking code MS SOT323 BC846BWT1G BC848A BC847B BC847A BC846B BC846A BC846
2014 - Not Available

Abstract: No abstract text available
Text: BC846, SBC846, BC847, SBC847, BC848 Series General Purpose Transistors NPN Silicon http , Collector-Emitter Voltage BC846, SBC846 BC847, SBC847 BC848 Collector-Base Voltage BC846, SBC846 BC847, SBC847 BC848 Unit VCBO Emitter-Base Voltage BC846, SBC846 BC847, SBC847 BC848 Value VCEO , Order Number: BC846AWT1/D BC846, SBC846, BC847, SBC847, BC848 Series ELECTRICAL CHARACTERISTICS (TA , Series BC848 Series V(BR)CEO 65 45 30 − − − − − − V Collector


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PDF BC846, SBC846, BC847, SBC847, BC848 70/SOTâ SBC846 SBC847
2011 - SBC846

Abstract: SBC847B SBC847 SBC846BWT1G
Text: BC846, SBC846, BC847, SBC847, BC848 Series General Purpose Transistors NPN Silicon These , , SBC846 BC847, SBC847 BC848 Collector-Base Voltage BC846, SBC846 BC847, SBC847 BC848 Emitter-Base Voltage BC846, SBC846 BC847, SBC847 BC848 Collector Current - Continuous Symbol VCEO Value 65 45 30 V 80 50 30 V , : BC846AWT1/D BC846, SBC846, BC847, SBC847, BC848 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless , , SBC846 Series BC847, SBC847 Series BC848 Series BC846, SBC846 Series BC847, SBC847 Series BC848 Series


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PDF BC846, SBC846, BC847, SBC847, BC848 SC-70/SOT-323 AEC-Q101 SBC846 SBC847B SBC847 SBC846BWT1G
transistors

Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor bc337 hie BC547 equivalent bc327 equivalent bc338 equivalent BC547 sot23
Text: -16 / -25 / -40 BC817 -16 / -25 / -40 BC818 -16 / -25 / -40 BC846 A / B BC847 A / B / C BC848 A , / C BC848 A / B / C BC849 A / B / C BC850 A / B / C BC337 -16 / -25 / -40 BC338 -16 / -25 / -40 , niedrig hoch niedrig LF Four Pole Equivalent Circuit NF Vierpol-Ersatzschaltbild Low frequency , offenem Eingang (i1=0) www.diotec.com 2/4 03/2002 Application Applikation Equivalent , Signalgenerators Equivalent Noise voltage uF Äquivalente Rauschspannung www.diotec.com 4/4 03


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PDF BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC856 transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor bc337 hie BC547 equivalent bc327 equivalent bc338 equivalent BC547 sot23
2009 - Marking Code SMD transistors

Abstract: BC848B BC848 NXP BV SMD BC848BSOT-23 MARKING CODE SMD IC BC858W BC858B BC848W BC848
Text: BC848 series 30 V, 100 mA NPN general-purpose transistors Rev. 07 - 17 November 2009 Product , BC848 series NXP Semiconductors 30 V, 100 mA NPN general-purpose transistors 2. Pinning , . Rev. 07 - 17 November 2009 2 of 12 BC848 series NXP Semiconductors 30 V, 100 mA NPN , BC848 series NXP Semiconductors 30 V, 100 mA NPN general-purpose transistors 7. Characteristics , reserved. Rev. 07 - 17 November 2009 4 of 12 BC848 series NXP Semiconductors 30 V, 100 mA


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PDF BC848 BC848B O-236AB BC858B BC848W OT323 SC-70 BC858W Marking Code SMD transistors BC848B BC848 NXP BV SMD BC848BSOT-23 MARKING CODE SMD IC BC858W BC858B BC848W
BC846A

Abstract: BC846B BC847A BC847B BC847C BC848C J-STD-020A marking 1F SOT-23
Text: Collector-Base Voltage Characteristic BC846 BC847 BC848 VCBO 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848 VCEO 65 45 30 V BC846, BC847 BC848 VEBO 6.0 5.0 V , (BR)CBO BC848 Symbol 80 50 30 - - - - - - V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) BC846 BC847 V(BR)CEO BC848 65 45 30 - - - - - - , ) BC846, BC847 V BC848 (BR)EBO H-Parameters Small Signal Current Gain Current Gain Group A B C


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PDF BC846A BC848C BC856-BC858) OT-23 OT-23, J-STD-020A MIL-STD-202, BC84xx-7* 3000/Tape BC846B BC847A BC847B BC847C BC848C J-STD-020A marking 1F SOT-23
2011 - Not Available

Abstract: No abstract text available
Text: BC846,BC847, BC848 ,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES · General , BC846 BC847,BC850 BC848 ,BC849 BC846 BC847,BC850 BC848 ,BC849 BC846 BC847,BC850 BC848 ,BC849 Symbol VCEO , ,BC847, BC848 ,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS PA RA ME TE R C o lle c to r - E mi tte r B , -REV.04 PAGE . 2 BC846,BC847, BC848 ,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC846A,BC847A , . Reverse Voltage PAGE . 3 BC846,BC847, BC848 ,BC849,BC850 SERIES ELECTRICA5L CHARACTERISTICS CURVE


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PDF BC846 BC847 BC848 BC849 BC850 100mA 2002/95/EC OT-23, MIL-STD-750, BC846A
2010 - MARKING BB SOT363

Abstract: BC847 dual SOT-363 marking BF BC848 BC847BPDW1T2G BC847BPDW1T1G BC847 BC846 transistor BC558 base collector emitter BC848CPDW1T1G
Text: Collector-Emitter Voltage BC846 BC847 BC848 VCEO 65 45 30 Collector-Base Voltage BC846 BC847 BC848 VCBO 80 50 30 V VEBO 6.0 V IC 100 mAdc Symbol Value Unit BC846 BC847 BC848 VCEO -65 -45 -30 V BC846 BC847 BC848 VCBO -80 -50 -30 V , Series BC847 Series BC848 Series BC846 Series BC847B Only BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB =


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PDF BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G OT-363/SC-88 BC846 BC847 BC848 MARKING BB SOT363 BC847 dual SOT-363 marking BF BC848 BC847BPDW1T2G BC847BPDW1T1G BC847 BC846 transistor BC558 base collector emitter BC848CPDW1T1G
2004 - NPN BC846B SOT23

Abstract: bc847c BC857 BC856 BC848 BC847B BC847A BC847 BC846B BC846A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BC846; BC847; BC848 NPN general purpose transistors , specification NPN general purpose transistors BC846; BC847; BC848 PINNING FEATURES · Low current (max , purpose transistors BC846; BC847; BC848 LIMITING VALUES In accordance with the Absolute Maximum , . UNIT open emitter BC846 V - 50 V BC848 - 30 V BC846 - 65 V BC847 - 45 V BC848 - 30 V BC846; BC847 - 6 V BC848 VEBO 80


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PDF BC846; BC847; BC848 BC856, BC857 BC858. BC846 NPN BC846B SOT23 bc847c BC856 BC848 BC847B BC847A BC847 BC846B BC846A
2009 - bc848s

Abstract: No abstract text available
Text: BC848 series 30 V, 100 mA NPN general-purpose transistors Rev. 07 — 17 November 2009 Product , BC848 series NXP Semiconductors 30 V, 100 mA NPN general-purpose transistors 2. Pinning , . Rev. 07 — 17 November 2009 2 of 12 BC848 series NXP Semiconductors 30 V, 100 mA NPN , November 2009 3 of 12 BC848 series NXP Semiconductors 30 V, 100 mA NPN general-purpose , BC848 series NXP Semiconductors 30 V, 100 mA NPN general-purpose transistors mgt727 600


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PDF BC848 BC848B O-236AB BC858B BC848W OT323 SC-70 BC858W bc848s
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