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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC808 Philips Semiconductors Chip One Exchange 67,200 - -
BC808-16 Chip One Exchange 6,500 - -
BC808-25LT1 ON Semiconductor Rochester Electronics 36,000 $0.04 $0.03
BC808-25LT1G ON Semiconductor element14 Asia-Pacific 7,540 $0.18 $0.02
BC808-25LT1G ON Semiconductor Allied Electronics & Automation - $0.04 $0.04
BC808-25LT1G ON Semiconductor Chip1Stop 33,000 $0.03 $0.02
BC808-25LT1G ON Semiconductor Wuhan P&S 10,100 $0.03 $0.02
BC808-25LT1G ON Semiconductor Farnell element14 13,340 £0.11 £0.03
BC808-25LT1G ON Semiconductor Newark element14 7,540 $0.15 $0.03
BC808-25LT1G ON Semiconductor Avnet - - -
BC808-25LT1G ON Semiconductor Rochester Electronics 369,000 $0.02 $0.02
BC808-40 Infineon Technologies AG Rochester Electronics 15,000 $0.02 $0.02
BC808-40E6327 Infineon Technologies AG Rochester Electronics 6,000 $0.04 $0.03
BC808-40E6327 Infineon Technologies AG Chip One Exchange 1,043 - -
BC808-40LT1 Motorola Semiconductor Products Bristol Electronics 6,000 $0.26 $0.05
BC808-40W Infineon Technologies AG Rochester Electronics 6,000 $0.02 $0.02
BC808-40WE6327 Infineon Technologies AG Rochester Electronics 30,000 $0.02 $0.02
BC80816MTF Fairchild Semiconductor Corporation Rochester Electronics 14,017 $0.09 $0.07
BC80825 Vishay Intertechnologies ComS.I.T. 3,000 - -
BC80825E6327 Infineon Technologies AG ComS.I.T. 4,230 - -
BC80825E6433 Infineon Technologies AG ComS.I.T. 3,765 - -
BC80825E9 Vishay Intertechnologies ComS.I.T. 256,010 - -
BC80825LT1G ON Semiconductor ComS.I.T. 2,970 - -
BC80825MTF Fairchild Semiconductor Corporation Rochester Electronics 15,000 $0.05 $0.04
BC80840 Philips Semiconductors ComS.I.T. 8,540 - -
BC80840MTF Fairchild Semiconductor Corporation Rochester Electronics 21,383 $0.05 $0.04
BC80840MTF ON Semiconductor Farnell element14 125 £0.02 £0.02
BC80840MTF ON Semiconductor Avnet 12,000 - -
BC80840MTF ON Semiconductor element14 Asia-Pacific 5 $0.17 $0.03
BC80840MTF ON Semiconductor element14 Asia-Pacific 5 $0.17 $0.03
BC808W Philips Semiconductors Chip One Exchange 1,172 - -
DSBC-80-80-D3-PPSA-N3 Festo Allied Electronics & Automation - $349.34 $349.34
DSBC-80-80-D3-PPVA-N3 Festo Allied Electronics & Automation - $354.89 $354.89
DSBC-80-80-PPSA-N3 Festo Allied Electronics & Automation - $324.39 $308.17
DSBC-80-80-PPVA-N3 Festo Allied Electronics & Automation - $332.28 $315.66
SBC808-25LT1G ON Semiconductor Avnet - - -

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BC808 datasheet (126)

Part Manufacturer Description Type PDF
BC808 AUK PNP Silicon Transistor (High current application Switching application) Original PDF
BC808 Continental Device India Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC808 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC808 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC808 Fairchild Semiconductor Switching and Amplifier Applications Original PDF
BC808 General Semiconductor Small Signal Transistors (PNP) Original PDF
BC808 Infineon Technologies PNP Silicon AF Transistors Original PDF
BC808 Kexin PNP Silicon AF Transistors Original PDF
BC808 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BC808 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BC808 Rectron Semiconductor Original PDF
BC808 Siemens Cross Reference Guide 1998 Original PDF
BC808 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BC808 TY Semiconductor TY Equivalent - PNP Silicon AF Transistors - SOT-23 Original PDF
BC808 Zetex Semiconductors TRANS GP BJT PNP 25V 0.5A 3SOT-23 Original PDF
BC808 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BC808 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BC808 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BC808 Others Transistor Shortform Datasheet & Cross References Scan PDF
BC808 Others Shortform Transistor PDF Datasheet Scan PDF
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BC808 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor 5cp

Abstract: 5Bp transistor 5Cp transistor 5DP transistor BC808 sot23 5bp 5bp sot23
Text: -16; BC808-16 BC807-25; BC808-25 BC807-40; BC808-40 DC current gain base-emitter voltage collector , NUMBER BC807 BC807-16 BC807-25 BC807-40 MARKING CODE 5Dp 5Ap 5Bp 5Cp TYPE NUMBER BC808 BC808-16 BC808-25 BC808-40 MARKING CODE 5Hp 5Ep 5Fp 5Gp T o p V ie w 1 2 MAM 256 Fig. 1 Simplified , gain; typical values. BC807-40; BC808-40 Fig.4 DC current gain; typical values. 1997 Feb 28 , High current (max. 500 mA) · Low voltage (max. 45 V). BC807; BC808 PINNING PIN 1 2 3 base emitter


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PDF BC807; BC808 BC817 BC818. BC807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 transistor 5cp 5Bp transistor 5Cp transistor 5DP transistor sot23 5bp 5bp sot23
BC808

Abstract: code marking 5Cp sot-23 BC817R BC807-16 BC807-25 BC807 T10102 BC808-16 BC808-25 BC817
Text: Marking code: BC807 = 5Dp BC807-16 = 5Ap BC807-25 = 5Bp BC807-40 = 5Cp BC808 = 5Hp BC808-16 = 5Ep BC808-25 = 5Fp BC808-40 = 5Gp 0.48 7Z96888. T Reverse pinning types are available on request. October 1993 , -lG = 500mA;-VCE = 1 V -lC = 100 mA; -VcE = 1 V; BC807; BC808 BC807-1 BC808- BC807-25 BC808-25 BC807-40 BC808-40 Transition frequency at f = 100 MHz -lC = 10 mA; —VqE = 5 V Collector capacitance at f = 1 , 711005b 00bfl405 755 HPHIN BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a


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PDF 711005b 00bfl405 BC807 BC808 OT-23 BC817; BC818 BC807 BC808 OT-23. code marking 5Cp sot-23 BC817R BC807-16 BC807-25 T10102 BC808-16 BC808-25 BC817
Not Available

Abstract: No abstract text available
Text: Base, 2 = Emitter, 3 = Collector. Type Marking BC807-16 -25 -40 5A 5B 5C BC808-16 , BC807, BC808 Small Signal Transistors (PNP) FEATURES SOT-23 ♦ PNP Silicon Epitaxial , Collector-Emitter Voltage BC807 BC808 - V ces - V ces 50 30 V V Collector-Emitter Voltage BC807 BC808 - V ceo - V CEO 45 25 V V Emitter-Base Voltage - V e bo 5 V , eneral S e m ic o n d u c t o r BC807, BC808 ELECTRICAL CHARACTERISTICS Ratings at 25 °C a m b ie


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PDF BC807, BC808 OT-23 BC817 BC818 OT-23 BC807-16 BC808-16
BC807

Abstract: BC808 BC808-16L BC807-16L BC807-25L BC807-40L BC808-25L BC808-40L
Text: ; BC808-16L = 5E; BC808-25L = 5F; BC808-40L = 5G Characteristic Symbol Max Unit Total Device Dissipation , 'CBO - - '.00 5.0 nA ON CHARACTERISTICS DC Current Gain flC = 100 mA, Vce = 1.0 V) BC807-16L BC808-16L BC807-25L BC808-25L BC807-40L BC808-40L dC = 500 mA, VCE = 1.0 V) hFE 100 160 250 40 - 250 400 600 , ,Tstq -55 to +150 °C I b3b?ES4 [1005002 ô I BC807-16L, -25L, -40L T-Xl-OJ BC808-16L , -25L, -40L CASE , MOTOROLA SC XSTRS/R F MAXIMUM RATINGS 1EE D Rating Symbol BC807 BC808 Unit Collector-Emitter


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PDF BC807 BC808 BC807-16L BC807-25L BC807-40L BC808-16L BC808-25L BC808-40L BC808-16L BC807-16L BC807-40L BC808-25L BC808-40L
1997 - 5HP ibm

Abstract: transistor 5cp BC808-16 BC807-40 BC808 BC807-25 BC808-25 BC817 BC818 BC807-16
Text: TYPE NUMBER 2 MARKING CODE BC807 5Dp BC808 5Ap BC808-16 5Bp BC808-25 5Fp BC807-40 5Cp BC808-40 MAM256 5Ep BC807-25 2 Top view 5Hp BC807 , ; note 1 see Figs 2, 3 and 4 100 - 600 BC807-16; BC808-16 100 - 250 BC807-25; BC808-25 160 - 400 BC807-40; BC808-40 250 - 600 40 - - - - -700 , V 200 150 100 50 0 10-1 1 10 BC807-16; BC808-16. Fig.2 DC current gain


Original
PDF M3D088 BC807; BC808 BC817 BC818. SCA53 117047/00/02/pp8 5HP ibm transistor 5cp BC808-16 BC807-40 BC808 BC807-25 BC808-25 BC818 BC807-16
BC808-16R

Abstract: bcb07 BC807-16R sot-23 npn marking code cr sot-23 Marking 25R MARKING tAN SOT-23 BC817R BC808 sot23 marking code tab BC818
Text: BC808-16 J BC807-25 L BC808-25 f BC807-40 I BC808-40 ) Transition frequency at f = 35 MHz -lc= 10 mA , = 5 CR BC808-16R = 5 ER -25R= 5 FR -40R= 5 GR 3 R-types are available on request. July 1987 149 This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BC807 BC808 ObE D , N AMER PHILIPS/DISCRETE ObE D 1^53^31 0015503 S BC807 BC808 SILICON PLANAR EPITAXIAL , frequency at f = 35 MHz -lc= 10 mA; -Vce = 5V BC807 BC808 -VcES max. 50 30 V -VcEO max. 45 25 V


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PDF BC807 BC808 OT-23 BC817; BC818; BC807 OT-23. 35MHz BC808-16R bcb07 BC807-16R sot-23 npn marking code cr sot-23 Marking 25R MARKING tAN SOT-23 BC817R BC808 sot23 marking code tab BC818
BC807C

Abstract: No abstract text available
Text: -16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808 40 = = = = = = = = 5Dp 5Ap 5Bp 5Cp 5Hp 5Ep 5Fp 5Gp , - Ic = 100 m A ; - V CE = 1 V ; BC807; BC808 BC807-16 I BC808-16 ) B C 8 0 7 25 I BC808-25 I BC807-40 | BC808-40 ) T ra n sition frequency at f = 100 MHz - I q = 10 m A ; - V q E = 5 V C o lle ctor , BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, In a SO T-23 plastic , Vceo - ' cm ^ to t Ti *T m ax' rnax. max. max. max. 50 45 1000 250 150 80 BC808 30 V 25 V mA mW °C MHz


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PDF BC807 BC808 BC817, BC818; BC808 BC807; BC807-16 BC808-16 BC807C
code marking 5Cp sot-23

Abstract: bc807 BC817 BC808-25 BC808-16 BC808 BC807-40 BC807-25 BC807-16 BC818
Text: code: BC807 = 5Dp BC807-16 = 5Ap BC807-25 = 5Bp BC807-40 = 5Cp BC808 = 5Hp BC808-16 = 5Ep BC808-25 = 5Fp BC808-40 = 5Gp H-lo.2® a|b| 7 1.4 2.5 1.2 max Reverse pinning types are available on , hFE min. 40 -lc = 100 mA; -VCE = 1 V; BC807; BC808 hFE 100 to 600 BC807-16 I BC808-16 I hFE 100 to 250 BC807-25 I BC808-25 i hFE 160 to 400 BC807-40 I BC808-40 j hFE 250 to 600 Transition , ■bbSB^ai 002443^ 071 MARX N AUER PHILIPS/DISCRETE b7E J> BC807 BC808 SILICON PLANAR


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PDF BC807 BC808 OT-23 BC817; BC818; OT-23. 35MHz code marking 5Cp sot-23 bc807 BC817 BC808-25 BC808-16 BC808 BC807-40 BC807-25 BC807-16 BC818
2004 - Not Available

Abstract: No abstract text available
Text: BC808-25LT1 , BC808-40LT1 General Purpose Transistors PNP Silicon Features http://onsemi.com , 1 2 SOT-23 CASE 318 STYLE 6 1 x D = F = BC808-25LT1 = G = BC808-40LT1 = Date Code 3 5xD 2 THERMAL , /D BC808-25LT1 , BC808-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) fT Cobo 100 - - 10 - -0.7 MHz pF VCE(sat) VBE(on) hFE BC808-25 BC808-40 160 250 40 - - - - - - - 400 , V V V Symbol Min Typ Max Unit DEVICE ORDERING INFORMATION Device BC808-25LT1 BC808-40LT1 Package


Original
PDF BC808-25LT1, BC808-40LT1 OT-23 BC808-25LT1/D
2005 - marking code 02 5X SOT23

Abstract: BC808
Text: BC808-25LT1 , BC808-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features , : BC808-25LT1 /D BC808-25LT1 , BC808-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC808-25 BC808-40 (IC = -500 mA, VCE = , -10 V, f = 1.0 MHz) ORDERING INFORMATION Device Package BC808-25LT1G BC808-40LT1G 5G , BC808-25LT1 , BC808-40LT1 1000 hFE , DC CURRENT GAIN VCE = -1.0 V TA = 25°C 100 10 -0.1


Original
PDF BC808-25LT1, BC808-40LT1 BC808-25LT1/D marking code 02 5X SOT23 BC808
1997 - BBC817

Abstract: BC818 BC817 BC808-40 BC808-25 BC808-16 BC808 BC807-40 BC807-25 BC807-16
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ BC807 BC808 BC808 5HZ BC808-16 5EZ BC808-25 5FZ BC808-40 5GZ COMPLEMENTARY TYPES BC807 BC808 E C B BC817 BC818 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC807 BC808 UNIT Collector-Base Voltage VCBO -50 -30 V Collector-Emitter Voltage VCEO -45 -25 Emitter-Base Voltage VEBO


Original
PDF BC807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BBC817 BC818 BC817 BC808-40 BC808-25 BC808-16 BC808 BC807-40 BC807-25 BC807-16
2001 - MARKING 1B SOT23

Abstract: 1B SOT23 5As SOT23 BC818 BC817 5cs sot23 BC808-25 BC808-16 BC808 BC807-25
Text: =E 3=C SOT23 BC808-16 5Es 1=B 2=E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC807 BC808 VCEO 45 25 , BC807, BC808 PNP Silicon AF Transistors 3 For general AF applications High , Thermal Resistance 1 Nov-29-2001 BC807, BC808 Electrical Characteristics at TA = 25°C, unless


Original
PDF BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 MARKING 1B SOT23 1B SOT23 5As SOT23 BC818 BC817 5cs sot23 BC808-25 BC808-16 BC808 BC807-25
2001 - Not Available

Abstract: No abstract text available
Text: =E 3=C SOT23 BC808-16 5Es 1=B 2=E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC807 BC808 VCEO 45 25 , BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High , Thermal Resistance 1 Aug-20-2001 BC807, BC808 Electrical Characteristics at TA = 25°C, unless


Original
PDF BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40
2005 - 0103ma

Abstract: bc807-25-gs08 BC817 BC808-25 BC808-16 BC808 BC807-40 BC807-25 bc807-40-gs08 BC807
Text: -40-GS08 5C Tape and Reel BC808-16 BC808-16-GS08 5E Tape and Reel BC808-25 BC808-25-GS08 5F Tape and Reel BC808-40 BC808-40-GS08 5G Tape and Reel Absolute Maximum Ratings , BC807 to BC808 Vishay Semiconductors Small Signal Transistors (PNP) Features · PNP Silicon , Symbol Value Unit - VCES 50 V - VCES 30 V BC807 - VCEO 45 V BC808 Collector - emitter voltage (Base open) Part BC807 BC808 Collector - emitter voltage (Base shorted


Original
PDF BC807 BC808 BC817 BC818 OT-23 D-74025 03-Jan-05 0103ma bc807-25-gs08 BC808-25 BC808-16 BC808 BC807-40 BC807-25 bc807-40-gs08
4501 ic

Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
Text: configuration 1 = Base, 2 = Emitter, 3 = Collector. Type BC807-16 -25 -40 BC808-16 -25 -40 Marking , BC807, BC808 Small Signal Transistors (PNP) FEATURES PNP Silicon Epitaxial Planar Transistors , temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC807 BC808 ­VCES ­VCES 50 30 V V Collector-Emitter Voltage BC807 BC808 ­VCEO ­VCEO 45 25 , fiberglass substrate, see layout 4/98 BC807, BC808 ELECTRICAL CHARACTERISTICS Ratings at 25 °C


Original
PDF BC807, BC808 OT-23 BC817 BC818 OT-23 Group-16 BC807 4501 ic npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 marking 5A
smd transistor 5c sot-23

Abstract: smd transistor 5d sot-23 SMD TRANSISTOR MARKING 5H smd 5H transistor SMD TRANSISTOR MARKING 5c bc807 5g smd transistor Transistor - CL 100 SMD TRANSISTOR MARKING 5G 5A SMD MARKING SOT23 BC807-40
Text: -23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistor Marking BC807 = 5D BC807­16 = 5A BC807­25 = 5B BC807-40 = 5C BC808 = 5H BC808­16 = 5E BC808­25 = 5F BC808­40 , 100 to 600 BC807­16 BC808­16 hFE 100 to 250 BC807­25 BC808­25 hFE 160 to 400 BC807­40 BC808­40 hFE 250 to 600 fT > Cc typ. Transition frequency at f = 100 MHz , ­VCE0 ­ICM Ptot Tj max. max. max. max. max. fT > BC807 50 45 BC808 30 V 25 V


Original
PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd transistor 5c sot-23 smd transistor 5d sot-23 SMD TRANSISTOR MARKING 5H smd 5H transistor SMD TRANSISTOR MARKING 5c bc807 5g smd transistor Transistor - CL 100 SMD TRANSISTOR MARKING 5G 5A SMD MARKING SOT23 BC807-40
Not Available

Abstract: No abstract text available
Text: -16 I BC808-16 I hpF 100 to 250 BC807-25 l BC808-25 l hFE 160 to 400 BC807-40 l BC808-40 ) Transition frequency at f =35 M Hz — I q = 10 mA; —V q E = 5 V hpE 250 to 600 , N^AMER PHILIPS/DISCRETE ObE D ■fc.b53T31 0015503 3 BC807 BC808 r - x v n SILICON , ; R and BC8f 8; R respectively. Q U IC K R E F E R E N C E D A T A BC807 BC808 -V c E S max , -16 = 5 A -25 = 5 B July 1987 149 N AMER PHILIPS/DISCRETE BC807 BC808 ObE D bb53T31


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PDF b53T31 BC807 BC808 OT-23 BC817; 7Z88080 QD15SQ7
Not Available

Abstract: No abstract text available
Text: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTMARKING DETAILS BC807 -5 D Z BC807-16-5A2 BC807-25 - 5BZ BC807-40 - 5CZ _ « / BC808 - 5HZ BC808-16-5EZ BC808-25-5FZ BC808-40 - 5GZ 3 E B COMPLEMENTARY TYPES BC807 BC808 - BC817 BC818 SOT23 ABSOLUTE MAXIMUM RATINGS. BC807 BC808 UNIT V CBO -50 -30 V VcEO PARAMETER -45 -25 V SYMBOL Collector-Base Voltage


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PDF BC807 BC808 BC807-16-5A2 BC807-25 BC807-40 BC808-16-5EZ BC808-25-5FZ BC808-40
BC807

Abstract: BC807-16 BC808 BC808-16 BC817 BC818
Text: 5A BC808-16 = 5E Codes: -25 = 5B -25 = 5F -40 = 5C -40 = 5G Packaging Codes/Options: E8/10K , BC807, BC808 Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4 , ) BC807 BC808 Collector-Emitter Voltage (Base open) BC807 BC808 Emitter-Base Voltage , page. 2/7/01 BC807, BC808 Small Signal Transistors (PNP) Electrical Characteristics (T = , pF Collector-Emitter Cutoff Current BC807 BC808 Emitter-Base Cutoff Current ­ICES


Original
PDF BC807, BC808 O-236AB OT-23) OT-23 BC807-16 BC808-16 E8/10K 30K/bo BC807 BC807 BC807-16 BC808 BC808-16 BC817 BC818
8C808

Abstract: bc807 BC808-25 BC808-40 BC808-16 BC808 BC807-40 BC807-25 BC807-16 BC807 5C
Text: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G Pin , = 100 mA; -VCE = 1 V; BC807; BC808 hFE 100 to 600 BC807-16 BC808-16 •hFE 100 to 250 BC807-25 BC808-25 hFE 160 to 400 BC807-40 BC808-40 hFE 250 to 600 Transition frequency at f = 100 MHz , mW Ti max. 150 °C fT 80 MHz 19 BC807 BC808 RATINGS (at Ta = 25°C unless otherwise


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PDF BC807 BC808 BC807 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 8C808 BC808-25 BC808-40 BC808-16 BC808 BC807-40 BC807-25 BC807-16 BC807 5C
2004 - Not Available

Abstract: No abstract text available
Text: =E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol BC807 BC808 Collector-emitter , BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High , calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-28-2005 BC807, BC808 , - - BC808 25 - - BC807 50 - - BC808 IC = 10 mA, IB = 0 30 -


Original
PDF BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-25 BC808-40 VPS05161
Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components BC808-16 BC808-25 BC808-40   , Marking: BC808-16 5E BC808-25 5F BC808-40 5G A D 3 C Electrical Characteristics @ 25OC , (BR)EBO ICBO IEBO hFE(2) V CE(sat) V BE DC Current Gain (IC=-100mAdc, V CE=-1.0Vdc) BC808-16 BC808-25 BC808-40 DC Current Gain (IC=-300mAdc, V CE=-1.0Vdc) Collector-Emitter Saturation Voltage , .950 .037 .950 w w w.m c c se m i.c om Revision: B 1 of 3 201 3 /0 1 /0 1 MCC BC808-16


Original
PDF BC808-16 BC808-25 BC808-40 -65OC OT-23 OT-23
C5 MARKING TRANSISTOR

Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Text: BC807/ BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â , : BC808 -30 V Collector Emitter Voltage : BC807 VcEO -45 V : BC808 -25 V Emitter-Base Voltage Vebo , Breakdown Voltage BVceo lc= -10mA, Ib=0 : BC807 -45 V : BC808 -25 V Collector-Emitter Breakdown Voltage BVces lc= -0.1mA, Ib=0 : BC807 -50 V : BC808 -30 V Emitter-Base Breakdown , SEMICONDUCTOR ™ ©1999 Fairchild Semiconductor Corporation BC807/ BC808 PNP EPITAXIAL SILICON TRANSISTOR


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PDF BC807/BC808 BC817/BC818 BC807 BC808 OT-23 -10mA, C5 MARKING TRANSISTOR BC808 marking code 9FB marking 9fb 9fb transistor
BC807

Abstract: transistor 5cp BC808 5dp transistor BC808 5Hp marking code 5Cp 5HP ibm 5Cp transistor 5Cp SOT23 BC808-16
Text: NUMBER CODE NUMBER CODE BC807 5Dp BC808 5Hp BC807-16 5Ap BC808-16 5Ep BC807-25 5Bp BC808-25 5Fp BC807-40 5Cp BC808-40 5Gp BC807; BC808 PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 3 _3 2 1 , ; BC808 lc = -100 mA; VCE = -1 V; note 1 see Figs 2, 3 and 4 100 600 BC807-16; BC808-16 100 - 250 BC807-25; BC808-25 160 - 400 BC807-40; BC808-40 250 - 600 hFE DC current gain lc = -500 mA; VCE = , BC807-16; BC808-16. Fig.2 DC current gain; typical values. 1997 Feb 28 4 This Material Copyrighted By


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PDF BC807; BC808 BC817and BC818. BC807 BC808 BC807-16 BC808-16 BC807-25 BC808-25 transistor 5cp 5dp transistor BC808 5Hp marking code 5Cp 5HP ibm 5Cp transistor 5Cp SOT23
1997 - BC807

Abstract: BC808 BC807 SOT23 5AZ BC807-16 BC807-40 spice 80T23 8C808 BC808-25 BC818 BC807-25
Text: SOT23 PNP SILICON PLANAR MEDIUM I ISSUE 4- JUNE 1996 PARTMARKING BC807 BC807 BC808 POWER TRANSISTORS I DETAILS BC808 BC807-16 - 5AZ 5HZ BC808-16 - 5DZ 5EZ E c BC807-25 - 5BZ BC808-25 5FZ BC807-40 - 5CZ 8C808-40 5GZ B BC807 TYPES - BC817 BC808 COMPLEMENTARY - BC818 m 80T23 ABSOLUTE MAXIMUM RATINGS. PARAMETER , ,.- Base Current BC808 -45 Vcslo BC807 A IBM Power Dissipation at Tamb


Original
PDF BC807 BC808 BC807-16 BC808-16 BC807-25 BC808-25 BC807-40 8C808-40 BC807 BC808 BC807 SOT23 5AZ BC807-16 BC807-40 spice 80T23 8C808 BC808-25 BC818
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