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BC807W NXP Semiconductors ComS.I.T. 15,000 - -
BC807W,115 Nexperia Avnet 27,000 $0.07 $0.02
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BC807W,115 Nexperia Future Electronics - $0.02 $0.02
BC807W,115 Nexperia Chip1Stop 33,000 $0.04 $0.01
BC807W,115 Nexperia element14 Asia-Pacific - $0.02 $0.02
BC807W,135 Nexperia Avnet - $0.02 $0.02
BC807W,135 Nexperia Chip1Stop 39,900 $0.04 $0.01

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BC807W datasheet (15)

Part Manufacturer Description Type PDF
BC807W Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC807W Galaxy Semi-Conductor Holdings PNP Silicon Epitaxial Planar Transistor Original PDF
BC807W Infineon Technologies PNP Silicon AF Transistors Original PDF
BC807W NXP Semiconductors BC807W - 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V Original PDF
BC807W Philips Semiconductors Surface mount Si-Epitaxial PlanarTransistors Original PDF
BC807W Philips Semiconductors PNP General Purpose Transistor Original PDF
BC807W Siemens Cross Reference Guide 1998 Original PDF
BC807W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BC807-W Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BC807-W Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BC807W,115 NXP Semiconductors 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
BC807W,135 NXP Semiconductors 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
BC807WT/R NXP Semiconductors 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V Original PDF
BC807WTR Philips Semiconductors PNP general purpose transistor Original PDF
BC807WT/R Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

BC807W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - transistor c32725

Abstract: c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor C32716 c32725 transistor transistor c32725 pinning information C3274
Text: data sheet CPCN200302007F CPCN200405006F BC807_4; BC807W_3 ; BC327_3 BC807_4 20040116 Product specification - BC807_3 BC807W_3 19990518 Product specification - BC807W_808W_CNV_2 , BC807; BC807W ; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 - 17 November 2009 , - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 , ; BC807W ; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807


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PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W BC327 transistor c32725 c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor C32716 c32725 transistor transistor c32725 pinning information C3274
BC807W

Abstract: BC808W
Text: BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W -VCBO -VCEO Emitter Base Voltage Value 50 30 45 25 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 12/01/2006 BC807W , hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V


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PDF BC807W BC808W BC807W BC808W
5Ct transistor

Abstract: transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W
Text: High current (max. 500 mA) Low voltage (max. 45 V). BC807W ; BC808W PINNING PIN 1 2 3 base emitter , transistor in a SOT323 plastic package. NPN complements: BC817W and BC818W. MARKING TYPE NUMBER BC807W , ) and symbol. QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BC807W BC808W collector-emitter voltage BC807W BC808VV peak collector current total power dissipation DC current gain transition , the Absolute Maximum Rating System (IEC 134). BC807W ; BC808W SYMBOL V CBO PARAMETER


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PDF BC807W; BC808W OT323 BC817W BC818W. BC807W BC807-16W BC807-25W BC807-40W BC808W 5Ct transistor transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W
Not Available

Abstract: No abstract text available
Text: transistor FEATURES BC807W ; BC808W PIN CONFIGURATION • High current • S- mini package , PARAMETER collector-emitter voltage CONDITIONS MIN. MAX. UNIT < S ii o SYMBOL BC807W : BC807-16W 5A BC807-25W 5B BC807W - -50 V BC807-40W 5C BC808W - -30 , BC807W - -45 V BC808-40W 5G BC808W - -25 V - -1 A - 200 mW , specification BC807W ; BC808W LIMITING VALUES In accordance with the Absolute Maximum System (I EC 134).


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PDF BC807W; BC808W OT323 BC807W: BC807-16W BC807-25W BC807W BC807-40W
BC807W

Abstract: BC808W
Text: BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W -VCBO -VCEO Emitter Base Voltage Value 50 30 45 25 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 23/02/2006 BC807W , hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V


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PDF BC807W BC808W BC807W BC808W
Not Available

Abstract: No abstract text available
Text: BC807W ; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP , PARAMETER BC807-25W 5B 5C BC808W MIN. BC807W BC807-40W VcES g 5A CONDITIONS II BC807-16W collector-emitter voltage MAX. UNIT o 5D > BC807W : -5 0 V , voltage BC808-25W 5F BC807W BC808-40W 5G BC808W - -2 5 V Icm peak , BC807W ; BC808W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL


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PDF BC807W; BC808W OT323 BC807-25W BC807W BC807-40W BC807-16W BC807W:
2005 - transistor c32725

Abstract: c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740
Text: Supersedes BC807_4; BC807W_3 ; BC327_3 · The format of the data sheet has been redesigned to comply , is a combination of the previous data sheets BC807_4, BC807W_3 and BC327_3. · · · · · · · , added BC807_4 20040116 Product specification - 9397 750 12393 BC807_3 BC807W_3 19990518 Product specification - 9397 750 05954 BC807W_808W_ CNV_2 BC327_3 19990415 , BC807; BC807W ; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 05 - 21 February 2005


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PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W transistor c32725 c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740
2009 - C32725 NPN transistor

Abstract: C32740 NPN transistor C32740 C32716 C32725
Text: €: updated 20050221 Product data sheet CPCN200302007F CPCN200405006F BC807_4; BC807W_3 ; BC327_3 BC807_4 20040116 Product specification - BC807_3 BC807W_3 19990518 Product specification - BC807W_808W_CNV_2 BC327_3 19990415 Product specification - BC327 , BC807; BC807W ; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 , - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337


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PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W BC327 C32725 NPN transistor C32740 NPN transistor C32740 C32716 C32725
2001 - marking 5bs

Abstract: BC808W BC808-40W BC808-25W BC808-16W BC807W BC807-40W BC807-25W BC807-16W 3CMA
Text: BC807W , BC808W PNP Silicon AF Transistors 3 For general AF applications High , to Application Note Thermal Resistance 1 Nov-29-2001 BC807W , BC808W Electrical , BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W 30 - - V , ) Pulse test: t 300µs, D = 2% 2 Nov-29-2001 BC807W , BC808W Electrical Characteristics at TA , Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC807W , BC808W Permissible Pulse


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PDF BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W OT323 BC807-25W BC807-40W marking 5bs BC808W BC808-40W BC808-25W BC808-16W BC807W BC807-40W BC807-25W BC807-16W 3CMA
BC807-16W

Abstract: BC807-25W BC807-40W BC807W BC817W 5B marking transistor
Text: BC807W FEATURES Pb High current(max.500mA) Lead-free Low voltage. Complements the BC817W , . Marking Package Code BC807W 5A/5B/5C SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise , Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC807W ELECTRICAL , Production specification BC807W www.galaxycn.com 3 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC807W PACKAGE OUTLINE Plastic surface mounted


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PDF BC807W 500mA) BC817W. OT-323 BL/SSSTF044 BC807-16W BC807-25W BC807-40W BC807W BC817W 5B marking transistor
Transistor marking S

Abstract: BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
Text: transistor N AtlER PHILIPS/DISCRETE PIN CONFIGURATION BC807W ; BC808W b?E J> FEATURES • High current , Top view MAM037 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA BC807W : 5D BC807-16W 5A , CONDITIONS MIN. MAX. UNIT VcES collector-emitter voltage BC807W BC808W Vœ = 0 - -50 -30 V V VCEO collector-emitter voltage BC807W BC808W open base - -45 -25 V V 'cm peak collector current - -1 A Ptt total power , Product specification PNP general purpose transistor N AMER PHILIPS/DISCRETE LIMITING VALUES BC807W


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PDF LhS3T31 002M443 BC807W; BC808W OT323 OT323 MAM037 BC807W: BC807-16W BC807-25W Transistor marking S BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
BC807W

Abstract: BC808W BC807W BC808W
Text: BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W Emitter Base Voltage -VCBO -VCEO Value 50 30 45 25 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/02/2006 BC807W , hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V


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PDF BC807W BC808W BC807W BC808W BC807W BC808W
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP general purpose transistor BC807W , : BC817W. 3 MARKING TYPE NUMBER MARKING CODE«1) TYPE NUMBER MARKING CODE«1) BC807W , purpose transistor BC807W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS , - |E = 0; VCB = -2 0 V; Tj = 150 °C I LO > C Û LU II II > o' BC807W , transistor 1999 M ay 18 BC807W 4 Philips S em iconductors P roduct specification PNP


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PDF BC807W OT323 BC817W. BC807-25W BC807-16W BC807-40W MAM048 OT323)
Not Available

Abstract: No abstract text available
Text: €” BC807W ; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j — — > â , : 5H BC808-16W 5E collector-emitter open base voltage BC808-25W 5F BC807W 5G BC808W MIN. BC807W BC807-40W BC808-40W V ces ii o 5D af* BC807W : BC808W , Philips Semiconductors Product specification PNP general purpose transistor BC807W ; BC808W N , collector-emitter voltage BC807W -5 0 V BC808W V cE O _ - -3 0 V _ -4 5 V


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PDF BC807W; BC808W OT323 MAM037 BC807-16W BC807-25W BC808W: BC808-16W
marking 5b philips

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BC807W PNP general purpose transistor Product specification Supersedes , mA) Low voltage (max. 45 V). BC807W PINNING PIN 1 2 base emitter collector DESCRIPTION , plastic package. NPN complement: BC817W. 3 ^= ^= 1 3 MARKING TYPE NUMBER BC807W BC807 , specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a BC807W PARAMETER , current gain BC807W BC807-16W BC807-25W BC807-40W DC current gain 100 100 160 250 600 250 400 600


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PDF BC807W BC807W OT323 BC817W. BC807-16W BC807-25W BC807-40W MAM048 SCA64 marking 5b philips
2009 - BC807w-40

Abstract: BC807W BC817W
Text: . BC807W-16 BC807W-25 BC807W-40 MARK 1M 1N 1R Type Name 2008. 9. 2 Revision No : 0 1/2 BC807W h FE - I C COMMON EMITTER VCE =-1V Ta=100 C Ta=25 C Ta=-25 C 50 30 , SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M Complementary to BC817W. B M D J 3 1 G A 2 MAXIMUM RATING (Ta=25) RATING UNIT Collector-Base Voltage VCBO -50 V


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PDF BC807W BC817W. BC807w-40 BC807W BC817W
1997 - 5Ct transistor

Abstract: transistor 5ct 91 BC808-16W BC807-16W Q 817 BC817W BC808W transistor 5bt BC807W BC807-40W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W ; BC808W PNP general , transistors BC807W ; BC808W FEATURES PINNING · High current (max. 500 mA) PIN · Low voltage , TYPE NUMBER 2 MARKING CODE BC807W 5Dt BC808W BC807-16W 5At BC808-16W 1 , -30 V BC807W - -45 V BC808W - -25 V - -1 A Tamb 25 °C - 200 mW BC807W BC808W VCEO collector-emitter voltage ICM peak collector current


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PDF M3D187 BC807W; BC808W OT323 BC817W BC818W. SCA54 117047/00/02/pp8 5Ct transistor transistor 5ct 91 BC808-16W BC807-16W Q 817 BC808W transistor 5bt BC807W BC807-40W
2012 - BC807W

Abstract: BC807W40
Text: :100250 , 25:160400 , 40:250630 MARK SPEC TYPE. MARK BC807W-16 1M BC807W-25 1N BC807W-40 1R 2008. 9. 2 Revision No : 0 1/2 BC807W 2008. 9. 2 Revision No : 0 2/2 KEC , SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. BC807W EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES ·Complementary to BC817W. A M B M 2 J G D 1 3 MAXIMUM RATING (Ta=25) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


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PDF BC807W BC817W. -500mA -500mA, -50mA -10mA, 100MHz -100mA BC807W-16 BC807W BC807W40
2004 - Not Available

Abstract: No abstract text available
Text: BC807W , BC808W PNP Silicon AF Transistors 3 • For general AF applications • High , -28-2005 BC807W , BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter , breakdown voltage BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W , Feb-28-2005 BC807W , BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified , , f = 1 MHz 3 Feb-28-2005 BC807W , BC808W Permissible Pulse Load RthJS = f (tp) Total


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PDF BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W OT323 BC807-25W BC807-40W
2004 - Not Available

Abstract: No abstract text available
Text: BC807W , BC808W PNP Silicon AF Transistors For general AF applications High collector current , Resistance 1 Nov-29-2001 BC807W , BC808W Electrical Characteristics at TA = 25°C, unless , 250 40 160 250 350 250 400 630 0.7 1.2 V BC807W BC808W V(BR)CBO BC807W BC808W V(BR)EBO 50 30 5 - 1) Pulse test: t 300µs, D = 2% 2 Nov-29-2001 BC807W , BC808W Electrical , -29-2001 BC807W , BC808W Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 300


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PDF BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC808-16W BC808-25W
2010 - MARKING 5ct

Abstract: No abstract text available
Text: BC807W / BC808W BC807W / BC808W PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation ­ Verlustleistung 2±0.1 0.3 3 PNP 200 mW SOT-323 0.01 g Version 2010-05-21 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse , - VCEO - VEBO Ptot - IC - ICM IEM - IBM Tj TS 2.1±0.1 Grenzwerte (TA = 25°C) BC807W 50 V 45 V , Semiconductor AG 1 BC807W / BC808W Characteristics (Tj = 25°C) Min. Base-Emitter-voltage ­


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PDF BC807W BC808W BC808W OT-323 UL94V-0 BC807-16 BC808-16 BC807-25 BC808-25 MARKING 5ct
Not Available

Abstract: No abstract text available
Text: P hilips S em iconductors Product specification PNP general purpose transistor BC807W , DESCRIPTION base emitter collector QUICK REFERENCE DATA SYMBOL BC807W : BC807-16W BC807-25W BC807-40W BC808W , . UNIT VcES collector-emitter v oe = o voltage BC807W BC808W collector-emitter open base voltage BC807W BC808W peak collector current total power dissipation DC current gain transition frequency up to T , Semiconductors Product specification PNP general purpose transistor BC807W ; BC808W LIMITING VALUES In


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PDF BC807W; BC808W OT323 BC807W: BC807-16W BC807-25W BC807-40W BC808W: BC808-16W
transistor 5d

Abstract: BC808W pnp transistor 313 BC808-40W BC808-25W BC808-16W BC807W BC807-40W BC807-25W BC807-16W
Text: Philips Semiconductor» PNP general purpose transistor 711002b ÜOböMCH 3Tfl MPHIN BC807W , . QUICK REFERENCE DATA BC807W : 5D BC807-16W 5A BC807-25W 5B BC807-40W 5C BC808W: 5H BC808-16W 5E , BC807W BC808W vœ=o - -50 -30 V V VcEO collector-emitter voltage open base BC807W - -45 V BC808W , general purpose transistor BC807W ; BC808W LIMITING VALUES In accordance with the Absolute Maximum System , BC807W - -50 V BC808W - -30 V VCE0 collector-emitter voltage open base; lc = -10 mA BC807W -


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PDF 711002b BC807W; BC808W OT323 OT323 MAM037 BC807W: BC807-16W BC807-25W BC807-40W transistor 5d BC808W pnp transistor 313 BC808-40W BC808-25W BC808-16W BC807W
2005 - Not Available

Abstract: No abstract text available
Text: BC807W , BC808W PNP Silicon AF Transistors · For general AF applications · High collector current · , calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-28-2005 BC807W , 40 160 250 350 250 400 630 0.7 1.2 IEBO 100 ICBO 50 ICBO 100 BC807W BC808W V(BR)EBO BC807W BC808W V , = 2% 2 Feb-28-2005 BC807W , BC808W Electrical Characteristics at TA = 25°C, unless , V, f = 1 MHz Ceb 60 Ccb 10 fT 200 typ. max. Unit MHz pF 3 Feb-28-2005 BC807W , BC808W


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PDF BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC808-25W BC808-40W
1999 - 301 marking code PNP transistor

Abstract: bc807 marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose , Product specification PNP general purpose transistor BC807W FEATURES PINNING · High current , TYPE NUMBER 1 MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC807W 5D BC807 , Semiconductors Product specification PNP general purpose transistor BC807W THERMAL CHARACTERISTICS , . UNIT collector cut-off current IEBO emitter cut-off current hFE DC current gain BC807W


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PDF M3D187 BC807W OT323 BC817W. BC807-25W BC807-16W 115002/00/03/pp8 301 marking code PNP transistor bc807 marking code
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