The Datasheet Archive

BC638-10 datasheet (4)

Part Manufacturer Description Type PDF
BC638-10 Continental Device India Silicon Planar Epitaxial Transistors, TO-92 Original PDF
BC638-10 Philips Semiconductors PNP GENERAL PURPOSE MEDIUM-POWER TRANSISTORS Original PDF
BC638-10 Philips Semiconductors PNP medium power transistors Original PDF
BC638-10 Others Transistor Shortform Datasheet & Cross References Scan PDF

BC638-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - bc640

Abstract:
Text: Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = ­ 10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO - - - - ­100 ­ 10 nAdc , Collector­Base Breakdown Voltage (IC = ­100 µAdc, IE = 0) Emitter­Base Breakdown Voltage (IE = ­ 10 mAdc, IC = , ­0.25 ­0.5 - - 250 250 160 160 250 - ­0.5 - ­ 1.0 Vdc Vdc - (IC = ­500 mA, VCE = ­2.0 V , , f = 100 MHz) Output Capacitance (VCB = ­ 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = ­0.5


Original
PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640
7Z104

Abstract:
Text: = 10mA;-Vce=5 V fT typ. 50 MHz \ BC636- 10 BC638-10 BC640- 10 BC636-16 BC638-16 BC640-16 hFE hFE , Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm x 10 mm. 182 June 1992 r Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips , €”29—23 Ie = 0;-VCb=30V lE =0; -VCB = 30 V;Tj = 150 °C -'CBO -'CBO < < 100 nA 10 ¡xA Emitter cut-off current lc = 0;-VEB = 5V -'ebo < 10 nA Base-emitter voltage -lC = 500 mA;-VCE = 2 V -vBe < 1 V Saturation


OCR Scan
PDF BC635, BC637 BC639. BC636 BC638 BC640 7Z104 BC640 BC639 BC638-10 BC636-10 BC635 BC640-10
2006 - transistor c63816

Abstract:
Text: - 250 hFE selection - 10 VCE = -2 V; IC = -150 mA 63 - 160 hFE selection -16 , C638 BC638-16 C63816 BCP52 BCP52 BCP52- 10 BCP52/ 10 BCP52-16 BCP52/16 BCX52 AE BCX52- 10 AG BCX52-16 AM 9397 750 14046 Product data sheet © Koninklijke , transistors 006aaa222 103 Zth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) ( 10 ) 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 t p (s) 103


Original
PDF BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 transistor c63816 c63816 c638 transistor c63816 transistor 14046 BC638 BCP52 BCX52 BCX55 BC638-16
2004 - BC640

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips , . UNIT - -100 nA - - 10 µA - -100 nA IC = -5 mA 63 - IC = -150 mA , .2 DC current gain BC636- 10 100 250 VCEsat collector-emitter saturation voltage BC636 , 120 80 40 0 -10-1 -1 -102 - 10 Fig.2 DC current gain; typical values. 2004 Oct


Original
PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A
bc638

Abstract:
Text: 5 0 mA lc = -5 0 0 mA hFi£ 40 40 25 = 250 hFE DC current gain BC636- 10 ; BC638-10 ; BC640- 10 BC636-16; BC638-16; BC640-16 lc = -1 5 0 mA; V Ce - 2 V; see Fig.2 63 100 160


OCR Scan
PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640
2001 - bc640

Abstract:
Text: Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = - 10 mAdc, IB , (BR)CBO Emitter - Base Breakdown Voltage (IE = - 10 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -30 Vdc, IE = 0, TA = 125°C) V(BR)EBO ICBO - - - - -100 - 10 , - - - - - - - - - -0.25 -0.5 - - 250 250 160 160 250 - -0.5 - - 1.0 Vdc Vdc (IC = -500 , Product (IC = -50 mAdc, VCE = -2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = - 10 Vdc, IE = 0, f = 1.0


Original
PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640
2009 - BC638

Abstract:
Text: , IC= -500mA Max. Units -0.1 A - 10 VEB= -5V, IC=0 hFE1 hFE2 hFE3 Typ. VCB , = - 1.2 mA IB = - 1.0 mA -300 IB = - 0.8 mA IB = - 0.6 mA -200 IB = - 0.4 mA -100 IB = - 0.2 mA -0 100 10 -0 - 10 -20 -30 -40 -50 -1 -100 -1000 IC , Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage - 10 -1000 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE - 10 VBE(sat


Original
PDF BC638 BC637 BC638 BC638TA BC637 BC638BU BC638TF BC638TFR transistor bc638 Transistor Marking C3
BC640

Abstract:
Text: MCC TM Micro Commercial Components BC636- 10 BC636-16 BC638 BC640   , Value -45 -60 -100 -45 -60 -80 -5.0 - 1.0 -100 -65 to +150 -65 to +150 BC636 BC638 BC640 , =-2Vdc, IC=-5mAdc) DC Current Gain (VCE=-2Vdc, IC=-150mAdc) BC636- 10 BC636-16,BC638 ,BC640 DC Current , E C B DIMENSIONS - -0.5 Vdc - - - 1.0 Vdc 100 - - MHz , : Device Packing Part Number-AP Ammo Packing: 20Kpcs/Ca rton Part Number-BP Bulk: 10 0 Kpcs


Original
PDF BC636-10 BC636-16 BC638 BC640 830mWatts BC640
2007 - C63816

Abstract:
Text: ; IC = -150 mA 63 - 250 hFE selection - 10 VCE = -2 V; IC = -150 mA 63 - 160 , BCP52 BCP52 BCP52- 10 BCP52/ 10 BCP52-16 BCP52/16 BCX52 AE BCX52- 10 AG BCX52 , 10 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 , /W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 t p (s) 103 FR4 PCB, standard


Original
PDF BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 C63816 transistor c63816 c638 transistor cbc638 c63816 transistor sot89 AE pnp TO-92 plastic package transistors BC638-16 BCP55
2005 - BC640-16

Abstract:
Text: -80 - - - - -5.0 - - Vdc - - - - -100 - 10 nAdc mAdc 25 40 40 , Voltage (IC = - 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) V(BR)CEO BC638 BC640 Vdc V(BR)CBO BC638 BC640 Emitter - Base Breakdown Voltage (IE = - 10 mAdc, IC = , - 1.0 Vdc fT - 150 - MHz Output Capacitance (VCB = - 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 9.0 - pF Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -


Original
PDF BC638, BC640, BC640-16 BC638 BC640 BC638/D BC640-16 BC640 BC64 BC638G BC640ZL1 BC640G BC64016 BC638 BC638ZL1G BC638ZL1
BC640

Abstract:
Text: 500mA;-VCE = 2 V hFE > 25 Transition frequency at f = 35 MHz -lc = 10 mA;-VCE = 5 V fT typ. 50 MHz BC636- 10 BC638-10 BC640- 10 BC636-16 BC638-16 BC640-16 hFE "FE > < > < 63 160 100 250 , board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm x 10 mm. 182 June 1992 This , -'CBO < 10 fA Emitter cut-off current lc = 0;-VEB = 5V -'ebo < 10 ULA Base-emitter voltage , ; BC638; BC640 b^E D ■bbS3131 00275^ 1Tb ■APX J 10 -Ic (mA) 10J 10 ' 10 10 " 10 " A f 184


OCR Scan
PDF bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640 bc639 bc638-10 BC635 BC636-10 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Not Available

Abstract:
Text: . 50 MHz * BC636- 10 BC638-10 BC640- 10 h FE > < 63 160 BC636-16 BC638-16 BC640 , printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm x 10 mm. N , 0; — VCB = 30 V; Tj = 150 °C —lCBO -'C B O < < 100 nA 10 p A Emitter cut-off current lc = 0 ; - V EB = 5 V - ' ebo < 10 pA Base-emitter voltage —I(j = 500 mA; — q E , . 7. 10 102 Fig. 8. 186 June 1992 bbS3^31 DQaTbOl b64 . Fig. 6. 1 ■-


OCR Scan
PDF bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638
2001 - BC635 ECB

Abstract:
Text: 1.0 mA IB = - 0.8 mA hFE, DC CURRENT GAIN IB = - 1.4 mA 100 -200 IB = - 0.6 mA IB = - 0.4 mA -100 IB = - 0.2 mA -0 -0 - 10 -20 -30 -40 -50 10 -1 - 10 -100 -1000 VCE[V , Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE - 10 -1000 IC = 10 IB -1 V BE(sat) IC[mA], COLLECTOR CURRENT VCE = - 2V -100 -0.1 - 10 VCE(sat) -0.01 -1 - 10 -100 -1000 -1 -0.2 -0.4 -0.6 -0.8 - 1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE


Original
PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638
2009 - Not Available

Abstract:
Text: =- 50mA,f=100MHz 100 MHz hFE(2) BC636- 10 BC636-16, BC638-16, BC640-16 63-160 100-250 A


Original
PDF BC636 BC638 BC640 BC636 BC638 150mA
BAV90

Abstract:
Text: -6 BCW61C BF419 BST40 BC638-10 BCX52- 10 BCY78-X BV859C BF 4 20 BF620 BC638-16 BCX52-16 BCH61D BF820 , BCH61 BD135- 10 BCX54-1Û BC557A BC857A BCX79 BCX71 BD135-16 BCX54-16 BCW69 BCY56 BC850B BD136 BCX51 t BC557B BC857B BCF70 BD136-6 BCX51-6 BCW70 BCY57 BC849 BD136- 10 BCX51- 10 BC557C BC857C BCF32/33 BD136 , BCY58-VII BCW60A BD137- 10 BCX55- 10 BCW29 BCY58-VIII BC849B BD137-16 BCX55-1G BCS58B BC858B BCW60B B0138 BCX52 BCW30 BCY58-IX BC849B BD138-6 BCX52-6 BC558C BC858C BCW60C BD138- 10 BCX52- 10 BC559 BC859


OCR Scan
PDF 0D12DEÃ BA243 BC146/02 BC849B/C BC338 BC818 BA314 BAS17 BCF32/33 BCX20 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 2N4858 smd BF980 BFG65 BC547 smd
2005 - BC638

Abstract:
Text: Package Reel Size Quantity - - 10 ,000 - 2 Tape Width - 2,000 , IB = - 1.0 mA -300 IB = - 0.8 mA IB = - 0.6 mA -200 IB = - 0.4 mA -100 -0 IB = - 0.2 mA -0 - 10 -20 -30 -40 100 10 -50 -1 -100 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage - 10 -1000 IC[mA], COLLECTOR CURRENT IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -0.01 -1000 IC


Original
PDF BC638 BC638 BC637 transistor bc638 BC637 Bc638 transistor PNP BC638BU BC638TA BC638TF BC638TFR
1996 - bc638 motorola

Abstract:
Text: €“100 – 10 nAdc µAdc OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage* (IC = – 10 , BC638 BC640 Vdc V(BR)CBO BC636 BC638 BC640 Emitter – Base Breakdown Voltage (IE = – 10 , €” – 1.0 Vdc fT — 150 — MHz Output Capacitance (VCB = – 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 9.0 — pF Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 , GAIN IC, COLLECTOR CURRENT (mA) –500 –100 –50 PD TC 25°C –20 – 10 –5 â


Original
PDF BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola
2001 - 24825

Abstract:
Text: power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips , 10 2 Philips Semiconductors Product specification PNP medium power transistors BC636 , PARAMETER CONDITIONS MIN. MAX. UNIT - -100 nA - - 10 µA - -100 nA , current gain IC = -150 mA; VCE = -2 V; see Fig.2 BC636- 10 100 250 VCEsat , ratio of the complementary pairs IC = 150 mA; VCE = 2 V 1.6 2001 Oct 10 3 - Philips


Original
PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 BC640 BC638-16 BC638 BC636-16 BC636-10 BC636 transistor BC636
1997 - st bc638

Abstract:
Text: ; see Fig.2 IC = -5 mA 40 - IC = -150 mA 40 250 IC = -500 mA 25 - BC636- 10 ; BC638-10 ; BC640- 10 63 160 BC636-16; BC638-16; BC640-16 100 250 IC = -150 mA; VCE = -2 , -100 ICBO collector cut-off current IE = 0; VCB = -30 V; Tj = 150 °C - - 10 µA IEBO , 0 10-1 1 102 10 Fig.2 DC current gain; typical values. 1997 Mar 07 4 103 IC , Poland: Ul. Lukiska 10 , PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see


Original
PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. st bc638 bc640 BC639 bc638-10 BC638 BC636-10 BC636 BC635 application note BC635
bc5478

Abstract:
Text: S0T23 BC548A AA BCX51 S0T89 BC636 AB BCW60B S0T23 BC548B AB BCX52- 10 S0T89 BC638-10 AC BCW60C S0T23 BC548B AC BCX51- 10 S0T89 BC636- 10 AD BCW60D S0T23 BC548C AD BCX51-16 S0T89 BC636-16 AE BCX52 SOT89 , BCX70K S0T23 BC547C AK BCX53- 10 S0T89 BC640- 10 AL BCX53-16 S0T89 BC640-16 AM BCX52-16 S0T89 BC638 , BSR43 S0T89 BSX47- 10 AS1 BST50 S0T89 BDX42 AS2 BST51 S0T89 BDX43 AS3 BST52 S0T89 BDX44 AT1 BST39 , BCX54- 10 S0T89 BC635- 10 BD BCW16D BD BCX54-16 S0T89 BC635-16 BE BCX55 S0T89 BC637 BG BCX71G S0T23


OCR Scan
PDF BZV49-C10 BZV85-C10 BZV49-C11 BZV85-C11 BZV49-C12 S0T89 BZV85-C12 BZV49-C13 BZV85-C13 bc5478 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd 2n3906 sot23 BC547 2N2222 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Not Available

Abstract:
Text: Gain-Bandwidth Product lC=1mA IE=0 V IC=20mA lB=0* V l£=1uA ic=o 100 10 nA pA . , , BC637, BC639, All V 1.0 V IC=500mA VCE=2V* 45 60 80 45 60 80 HFE *T 5 , (sat) u 0 y ic-ioiB' 10 Ic * 100 (mA) 1000 *C (m A) HFb G r o u p in g @


OCR Scan
PDF BC635, BC637, BC639 BC636, BC638, BC640 3C637 BC638
1996 - BC638

Abstract:
Text: - - Vdc - - - - ­100 ­ 10 nAdc µAdc OFF CHARACTERISTICS Collector ­ Emitter Breakdown Voltage* (IC = ­ 10 mAdc, IB = 0) Collector ­ Base Breakdown Voltage (IC = ­100 µAdc , Breakdown Voltage (IE = ­ 10 mAdc, IC = 0) Collector Cutoff Current (VCB = ­30 Vdc, IE = 0) (VCB = ­30 , - Vdc Base­Emitter On Voltage (IC = ­500 mAdc, VCE = ­2.0 Vdc) VBE(on) - - ­ 1.0 Vdc fT - 150 - MHz Output Capacitance (VCB = ­ 10 Vdc, IE = 0, f = 1.0 MHz) Cob


Original
PDF BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 motorola bc640 pnp transistors BC 293
bc636

Abstract:
Text: =-150mA BC636- 10 DC current gain BC636-16, BC638-16, BC640-16 hFE(3) Collector - emitter saturation , 100 V V MHz CLASSIFICATION OF h FE(2) RANK BC636- 10 BC636-16, BC638-16, BC640


Original
PDF BC636/638/640 BC636 BC640 BC638 -500mA -500mA, -50mA bc636 Plastic Encapsulate Transistors BC640-16 BC638-16 Diode bc640 BC640 transistor bC640 BC638 BC636-16 BC636-10
2008 - BC636

Abstract:
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC636- 10 BC636-16 BC638 BC640 PNP Epitaxial Silicon Transistors TO-92 Features · · · · , Collector-Emitter Voltage BC636 BC638 BC640 BC636 BC638 BC640 Value -45 -60 -100 -45 -60 -80 -5.0 - 1.0 -100 -65 to , Current Gain (VCE=-2Vdc, IC=-5mAdc) DC Current Gain (VCE=-2Vdc, IC=-150mAdc) BC636- 10 BC636-16,BC638 , -0.5 - 1.0 -Vdc Vdc MHz DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 - - Vdc


Original
PDF BC636-10 BC636-16 BC638 BC640 830mWatts BC636 BC640
bc640

Abstract:
Text: = " lO Vdc, l£ = 0, f s 1.0 MHz) Input Capacitance (VEB = -0 .5 Vdc, lc = 0, f = 1.0 MHz) 1. Pulse , - 10 -5 -2 -1 -1 -2 -3 -4 -5 -7 - 10 -20 -30-40-50 -70 -100 lC, COLLECTOR CURRENT (mA) VCE , Product Figure 4. "Saturation" and "On" Voltages " -1 -3 -5 - 10 -30 -50 -100


OCR Scan
PDF BC636 BC638 BC640 BC640
Supplyframe Tracking Pixel