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  You can filter table by choosing multiple options from dropdownShowing 23 results of 24
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BC635 SPC Multicomp Newark element14 52,369 $0.17 $0.05
BC635 SPC Multicomp Farnell element14 53,219 £0.22 £0.06
BC635 SPC Multicomp element14 Asia-Pacific 55,821 $0.15 $0.06
BC635 Fairchild Semiconductor Corporation ComS.I.T. 2,000 - -
BC635 Continental Device India Ltd TME Electronic Components 2,260 $0.13 $0.05
BC635 NXP Semiconductors America II Electronics 10,000 - -
BC635 Philips Semiconductors America II Electronics 70,000 - -
BC635-16 Philips Semiconductors America II Electronics 16,000 - -
BC63516 NXP Semiconductors ComS.I.T. 8,000 - -
BC635ZL1 ON Semiconductor Rochester Electronics 14,000 $0.09 $0.07
BC635ZL1G ON Semiconductor Rochester Electronics 6,000 $0.05 $0.04
DSBC-63-50-D3-PPVA-N3 Festo Allied Electronics & Automation - $263.93 $263.93
DSBC-63-50-PPSA-N3 Festo Allied Electronics & Automation 3 $240.17 $228.16
DSBC-63-50-PPVA-N3 Festo Allied Electronics & Automation - $246.08 $233.78
DSBC-63-500-PPSA-N3 Festo Allied Electronics & Automation - $308.55 $293.12
DSBC-63-500-PPVA-N3 Festo Allied Electronics & Automation - $314.51 $298.78
MBC63-50 SMC Corporation of America Allied Electronics & Automation - $202.06 $202.06
MBC63-500 SMC Corporation of America Allied Electronics & Automation - $275.09 $275.09
MDBC63-50 SMC Corporation of America Allied Electronics & Automation - $207.83 $207.83
MDBC63-50+150-J59W-111G-XC11 SMC Corporation of America Allied Electronics & Automation - $644.47 $644.47
MDBC63-500 SMC Corporation of America Allied Electronics & Automation - $280.86 $280.86
MDBC63-5015 SMC Corporation of America Allied Electronics & Automation - $1015.20 $1015.20
MDNBC63-500-D SMC Corporation of America Allied Electronics & Automation - $611.94 $611.94

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BC635 datasheet (86)

Part Manufacturer Description Type PDF
BC635 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BC635 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BC635 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
BC635 Infineon Technologies TRANS GP BJT NPN 45V 1A 3TO-92 Original PDF
BC635 Motorola High Current Transistors Original PDF
BC635 NXP Semiconductors 45 V, 1 A NPN medium power transistors Original PDF
BC635 On Semiconductor High Current Transistors Original PDF
BC635 Philips Semiconductors NPN medium power transistors Original PDF
BC635 Philips Semiconductors Small-signal Transistors Original PDF
BC635 Siemens Cross Reference Guide 1998 Original PDF
BC635 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BC635 Siemens Transistor / Diode Selection Guide Original PDF
BC635 Siemens NPN Silicon AF Transistor Original PDF
BC635 STMicroelectronics SMALL SIGNAL NPN TRANSISTOR Original PDF
BC635 Various Russian Datasheets Transistor Original PDF
BC635 Bharat Electronics Shortform Transistor Data Scan PDF
BC635 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BC635 Crimson Semiconductor Transistor Selection Guide Scan PDF
BC635 Micro Electronics Silicon Transistors Scan PDF
BC635 Micro Electronics Medium Power Amplifiers and Switches Scan PDF

BC635 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
bc639

Abstract: BC635 BC637 bc639 equivalent BC635 TRANSISTOR E C B bc635 datasheet BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for , Emitter Voltage Symbol BC635 BC637 BC639 BC635 BC637 BC639 Emitter Base Voltage VCBO , , Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC , 100 nA IEBO - 100 nA BC635 BC637 BC639 V(BR)CBO 45 60 100 - V BC635 BC637 BC639 V(BR)CEO 45 60 80 - V V(BR)EBO 5 - V VCE(sat) -


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PDF BC635 BC637 BC639 BC635 BC637 bc639 bc639 equivalent BC635 TRANSISTOR E C B bc635 datasheet BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
bc639

Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for , Emitter Voltage Symbol BC635 BC637 BC639 BC635 BC637 BC639 Emitter Base Voltage VCBO , , Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC , 100 nA IEBO - 100 nA BC635 BC637 BC639 V(BR)CBO 45 60 100 - V BC635 BC637 BC639 V(BR)CEO 45 60 80 - V V(BR)EBO 5 - V VCE(sat) -


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PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent
2002 - bc635

Abstract: transistor C 639 W
Text: Qualification Support Click on a product for detailed qualification data Product BC635 BC635_D26Z BC635_D27Z BC635_D75Z BC635_L34Z BC635_NL back to top © 2007 Fairchild Semiconductor Products | Design Center , BC635_D26Z Full Production N/A TO-92 3 TAPE REEL BC635_D27Z Full Production N/A TO-92 3 TAPE REEL BC635_D75Z Full Production N/A TO-92 3 AMMO Line 1: $Y , (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) Line 2: BC635 Line 3: E C B BC635_L34Z


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W
bc637 motorola

Abstract: bc639 motorola bc637 bc639 bc635
Text: BC635 BC637 BC639 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B , Junction Temperature Range Symbol VCEO v CBO vebo BC635 45 45 BC637 60 60 5.0 0.5 625 5.0 1.5 12 - 5 , ollector-E m itter Breakdown VoltageO) (Iq = 1 0 mAdc, Ib = 0) v (BR)CEO BC635 BC637 BC639 v (BR)CBO BC635 , S m all-S ign al Transistors, FETs and Diodes Device Data BC635 BC637 BC639 ELECTRICAL , Gain (1C = 5.0 mAdc, V q e = 2.0 Vdc) ( lc = 150 mAdc, V q e = 2.0 Vdc) hFE BC635 BC637 BC639 25 40 40


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PDF BC635 BC637 BC639 BC639 bc637 motorola bc639 motorola
2005 - transistor C635

Abstract: c63516 BD9397 C635 Philips c635 transistor C6351 BCX54-SOT89 PHILIPS BCX54 transistor BC 147 BCP54, BCX54
Text: information" added BC635_637_639_4 20011010 Product specification - 9397 750 08738 BC635_637_639_3 , : Marking codes Type number Marking code BC635 C635 BC635-16 C63516 BCP54 BCP54 , notice Doc. number Supersedes BC635_BCP54_ BCX54_6 20050225 Product data sheet CPCN200405029 9397 750 14039 BC635_637_639_4 ; BCP54_55_56_5; BCX54_55_56_4 · The format of the , Semiconductors. · This data sheet contains a type combination out of the previous data sheets BC635_637_639_4


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PDF BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips c635 transistor C6351 BCX54-SOT89 PHILIPS BCX54 transistor BC 147 BCP54, BCX54
2004 - BC639

Abstract: No abstract text available
Text: BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application , ST BC635 VCER 45 V ST BC637 VCER 60 V ST BC639 VCER 100 V ST BC635 VCES 45 V ST BC637 VCES 60 V ST BC639 VCES 100 V ST BC635 , AVAILABLE C C BC635 / BC637 / BC639 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit hFE 25 - - BC635 hFE 40 250 - BC637/BC639 hFE 40 160 -


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PDF BC635 BC637 BC639 BC635 BC637 BC639
transistor C 639 W

Abstract: bc736 transistor BC637 complement BC635 transistor 639 BC637 fa 506 BC639 TI 506 transistor I100O
Text:  BC635 /637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635 /638f640 ABSOLUTE MAXIMUM RATINGS (Ta = 250C) Characteristic Symbol Rating Unit Collector Emitter Voltage: BC635 VcER 45 V at Rbe = 1Kohm BC637 60 V BC639 100 V Collector Emitter Voltage: BC635 VcES 45 V BC637 60 V BC639 100 V Collector Emitter Voltage: BC635 VCEO 45 V BC637 , BVceo lc = 10mA, Ib=0 : BC635 45 V :BC736 60 V :BC639 80 V Collector Cutoff Current


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PDF BC635/637/639 BC635/638f640 BC635 BC637 BC639 transistor C 639 W bc736 transistor BC637 complement transistor 639 BC637 fa 506 BC639 TI 506 transistor I100O
1999 - BC637

Abstract: BC639 BC635 bc639 philips BC640 BC639-10 BC638 BC637-16 BC636 BC635-16
Text: BC635-16 ; BC637-16; BC639-16 100 250 - 500 DC current gain VCEsat collector-emitter , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635 ; BC637; BC639 NPN medium , Semiconductors Product specification NPN medium power transistors BC635 ; BC637; BC639 FEATURES , BC635 - 45 V BC637 - 60 V - 100 V BC635 - 45 V BC637 - , power transistors BC635 ; BC637; BC639 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER


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PDF M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC637 BC639 BC635 bc639 philips BC640 BC639-10 BC637-16 BC636 BC635-16
bc639

Abstract: BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16 BC637
Text: BC635-10 ; BC637-10; BC639-10 BC635-16 ; BC637-16; BC639-16 coilector-emitter saturation voltage , PIN 1 2 3 BC635 ; BC637; BC639 DESCRIPTION base collector emitter 1 . ? | r \ 3 = M AM259 , V CBO PARAMETER collector-base voltage BC635 BC637 BC639 collector-emitter voltage BC635 BC637 , ). SYMBOL V CBO BC635 ; BC637; BC639 PARAMETER collector-base voltage BC635 BC637 BC639 , 150 +150 V V V V V V V A A UNIT VcEO collector-emitter voltage BC635 BC637 BC639 V ebo


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PDF BC636, BC638 BC640. BC635; BC637; BC639 AM259 BC635 BC637 BC639 BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16
BC635 TRANSISTOR E C B

Abstract: transistor C 639 W
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635 /637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635 /638/640 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic , BC635 : BC637 BC639 BC635 BC637 BC639 BC635 BC637 BC639 Emitter Base Voltage Collector , Voltage : BC635 : BC736 : BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BC635 : BC637/BC639 B V ceo Collector Emitter Saturation Voltage Base Emitter On Voltage


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PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 BC635 TRANSISTOR E C B transistor C 639 W
BC639 collector

Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Text: BC635 /637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · Complement to BC635 /638/640 ABSOLUTE MAXIMUM RATINGS (TA =25t;) Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage BC635 BC637 BC639 BC635 BC637 BC639 BC635 BC637 BC639 , =25TC) Characteristic Coilector-Emitter Breakdown Voltage BC635 :BC736 :BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain . BC635 :BC637/BC639 Collector Emitter Saturation Voltage Base


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PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 BC639 collector transistor 639 640 TRANSISTOR NPN transistor BC637 complement
2006 - 639 TRANSISTOR PNP

Abstract: 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
Text: 10 mm BC635_BC640Rev_4 030106E Continental Device India Limited Data Sheet Page 1 of 5 , Test: Pulse Width < 300µs, Duty Cycle 2% µ BC635_BC640Rev_4 030106E Continental Device India , 645 gm/ pcs 2K 12.5" x 8" x 1.8" 2K 17" x 15" x 13.5" 32K 12.5 kgs BC635_BC640Rev_4 , BC635_BC640Rev_4 030106E Continental Device India Limited Data Sheet Page 4 of 5 Customer Notes , , Fax + 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com BC635_BC640Rev_4 030106E


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PDF BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
bc639

Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier , ST BC635 VCER 45 V ST BC637 VCER 60 V ST BC639 VCER 100 V ST BC635 VCES 45 V ST BC637 VCES 60 V ST BC639 VCES 100 V ST BC635 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST BC635 , - BC635 hFE 40 250 - BC637/BC639 hFE 40 160 - hFE 25 - -


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PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent C 14M
bc639

Abstract: BC637 BC635 BC635 TRANSISTOR E C B
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier , ST BC635 VCER 45 V ST BC637 VCER 60 V ST BC639 VCER 100 V ST BC635 VCES 45 V ST BC637 VCES 60 V ST BC639 VCES 100 V ST BC635 , Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST BC635 / BC637 / BC639 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit hFE 25 - - BC635 hFE 40


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PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B
2001 - BC639

Abstract: BC639 18 BC635RL1 BC635ZL1 BC637 BC635 BC639-16 BC639RL1 BC639ZL1 bc637 050
Text: INFORMATION THERMAL CHARACTERISTICS BC635RL1 TO­92 2000/Tape & Reel BC635ZL1 TO­92 2000 , BC635 , BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 , ­92 2000/Ammo Pack Publication Order Number: BC635 /D BC635 , BC637, BC639, BC639­16 ELECTRICAL


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PDF BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 BC639 18 BC635RL1 BC635ZL1 BC637 BC635 BC639-16 BC639RL1 BC639ZL1 bc637 050
2004 - bc639

Abstract: BC63x BC639-16ZL1 BC637
Text: BC635 , BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com COLLECTOR 2 3 BASE Symbol BC635 BC637 BC639 Collector-Base Voltage BC635 BC637 BC639 Emitter-Base Voltage , INFORMATION Device BC635RL1 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 (Pb-Free) Shipping 2000 , Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC635ZL1 BC637 BC639 , Order Number: BC635 /D Semiconductor Components Industries, LLC, 2004 May, 2004 - Rev. 4 BC635


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PDF BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC63x BC639-16ZL1
bc736

Abstract: transistor C 639 W transistor BC637 complement BC635 BC639 BC637
Text:  BC635 /637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635 /638/640 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage BC635 VcER 45 V at RBe=1 Kohm : BC637 60 V BC639 100 V Collector Emitter Voltage BC635 VcES 45 V BC637 60 V BC639 100 V Collector Emitter Voltage BC635 VcEO 45 V BC637 , Collector-Emitter Breakdown Voltage BVceo lc=10mA, Ib=0 : BC635 45 V : BC736 60 V : BC639 80 V


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PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W transistor BC637 complement BC639 BC637
2002 - Not Available

Abstract: No abstract text available
Text: BC635 /637/639 BC635 /637/639 Switching and Amplifier Applications • Complement to BC636/638 , 100 V V V : BC635 : BC637 : BC639 VCEO Value : BC635 : BC637 : BC639 VCES Parameter Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 45 60 80 V V V V , otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 , =2V, IC=5mA VCE=2V, IC=150mA hFE3 : All : BC635 : BC637/BC639 : All Min. Typ. Max


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639
2000 - BC639

Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Text: ­92 BC635ZL1 February, 2000 ­ Rev. 2 Shipping BC635RL1 © Semiconductor Components Industries, LLC, 2000 Package TO­92 2000 Units/Ammo Pack Publication Order Number: BC635 /D BC635 , BC637 , BC635 , BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector ­ Emitter Voltage VCEO 45 60 , )CEO BC635 BC637 BC639 Vdc V(BR)CBO BC635 BC637 BC639 Emitter ­ Base Breakdown Voltage


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PDF BC635, BC637, BC639 BC635 BC637 r14153 BC635/D BC639 BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
1999 - BC640

Abstract: BC635 BC639-16 BC639-10 BC639 BC638 BC637-16 BC637 BC636 BC635-16
Text: - BC639-10 63 160 BC635-16 ; BC637-16; BC639-16 100 250 - 500 DC current , BC635 ; BC637; BC639 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 80 , . UNIT open emitter BC635 - 45 V BC637 - 60 V - 100 V BC635 - , specification NPN medium power transistors BC635 ; BC637; BC639 THERMAL CHARACTERISTICS SYMBOL Rth j-a , Philips Semiconductors Product specification NPN medium power transistors BC635 ; BC637; BC639


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PDF BC635; BC637; BC639 BC636, BC638 BC640. MAM259 SCA63 115002/00/03/pp8 BC640 BC635 BC639-16 BC639-10 BC639 BC637-16 BC637 BC636 BC635-16
2005 - BC639 pin details

Abstract: BC639 application note BC639 BC639G BC637 BC635ZL1G BC63916 BC635RL1G BC635RL1 BC635
Text: , BC639, BC639-16 DEVICE ORDERING INFORMATION Device BC635RL1 BC635RL1G BC635ZL1 BC635ZL1G BC637 , BC635 , BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com , Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage 45 60 80 VCBO BC635 BC637 BC639 Emitter - Base Voltage 1 EMITTER Vdc Vdc 45 60 80 , : BC635 /D BC635 , BC637, BC639, BC639-16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted


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PDF BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 pin details BC639 application note BC639 BC639G BC637 BC635ZL1G BC63916 BC635RL1G BC635RL1 BC635
2006 - Not Available

Abstract: No abstract text available
Text: BC635_BC640Rev_5 180712E Continental Device India Limited Data Sheet Page 2 of 5 BC635 , 637, 639 NPN , for collector lead min 10mm x 10 mm BC635_BC640Rev_5 180712E Continental Device India Limited , 3 Max 1.40 1.80 Base Collector Emitter 2.082 1.53 5º BC635_BC640Rev_5 180712E , Dimensions are in mm Tape Specifications All Dimensions are in mm BC635_BC640Rev_5 180712E , . BC635_640Rev_5 180712E CDIL is a registered Trademark of Continental Device India Limited C


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PDF BC635, BC636, 640Rev 180712E C-120
BC639 philips

Abstract: BC635-16 BC639 BC638 BC637 BC636 IEC134 d 2923 BC639-10 T-29-23
Text: > < 40 250 hFE > 25 fT typ. 130 MHz BC635-10 BC637-10 hFE > It BC639-10 ^ 1ÖU BC635-16 BC637-16 hFE > â , BC635 ; BC637; BC639 PHILIPS INTERNATIONAL 5bE D 711002b 0045052 bTS «PHIN SILICON PLANAR EPITAXIAL , audio amplifiers. P-N-P complements are BC636, BC638 and BC640. QUICK REFERENCE DATA BC635 BC637 , Semiconductors. BC635 ; BC637; BC639 PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) SbE D 711Dfl2b DDM20S3 531 HPHIN " T-29-23 ■BC635 BC637 BC639 Collector-base


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PDF BC635; BC637; BC639 711002b BC636, BC638 BC640. BC635 BC637 BC639 philips BC635-16 BC636 IEC134 d 2923 BC639-10 T-29-23
bc 148 npn transistor

Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
Text: Transition frequency at f = 100 MHz l c = 50 m A ; V CE = 5 V h BC635-10 BC637-10 BC.639-10 BC635-16 , BC635 ; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 Collector-base , . September 1994 145 BC635 ; BC637; BC639 RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC 134) BC635 Col lector-base voltage (open em itter) C ollector-em itter voltage (open


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PDF BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 bc 148 npn transistor NPN transistor bc 148 BC 148 transistor
CTBC 635

Abstract: 635-16 TBC635-16 TBC635 63516 cbc635 BC635-16 transistor bc635 NPN transistor 500ma TO-92 BC635
Text: =500mA Classification *hFE Marking BC635 40 - 250 BC635-10 63 - 160 BC635-16 100 - 250 CBC 635 PXYY , BC635_TBC635Rev020505E Continental Device India Limited Data Sheet Page 2 of 5 BC635 (9AC) TBC635 (Tin , BC635_TBC635Rev050505E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL , 8" x 1.8" 2K 17" x 15" x 13.5" 32K 12.5 kgs BC635_TBC635Rev020505E Continental , TO-92 Plastic Package BC635_TBC635Rev020505E Continental Device India Limited Data Sheet


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PDF BC635 TBC635 BC636 C-120 TBC635Rev020505E CTBC 635 635-16 TBC635-16 TBC635 63516 cbc635 BC635-16 transistor bc635 NPN transistor 500ma TO-92 BC635
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