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HSP50214BVC Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet
HSP50214BVCZ Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet
HSP50214BVIZ Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet
HSP50214BVI Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet
CS82C50A-5Z96 Intersil Corporation CMOS Asynchronous Communications Element; PLCC44; Temp Range: See Datasheet
ICL7660ACBA-T Intersil Corporation CMOS Voltage Converters; PDIP8, SOIC8; Temp Range: See Datasheet

BC560 pnp datasheet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - BC558B

Abstract: bc560
Text: BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • • • â , / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor April 2014 Stresses exceeding , www.fairchildsemi.com 2 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor Absolute , / BC559 / BC560 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-92 (Bulk) D Figure , / BC560 Rev. 1.1.0 www.fairchildsemi.com 4 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial


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PDF BC556 BC557 BC558 BC559 BC560 BC556, BC559, BC546, BC547, BC558B bc560
2001 - TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Text: products >> Home find products space space space BC560 Products groups PNP Epitaxial Silicon Transistor , , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA , Terms Datasheet Identification Advance Information Product Status Formative or In Design First


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
2002 - TRANSISTOR C 557 B

Abstract: bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
Text: BC560 Related Links Request samples How to order products ·Models ·Qualification Support Datasheet , this datasheet Design center High Voltage: BC556 VCEO= -65V Low Noise: BC559, BC560 Complement to , , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR C 557 B bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
1999 - transistor bc556

Abstract: transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE: BC556, VCEO= -65V · LOW NOISE: BC559, BC560 · Complement to BC546 . BC 550 TO-92 ABSOLUTE , Capacitance Noise Figure : BC556/557/558 : BC559/560 CCBO NF : BC559 : BC560 NF Test , Fairchild Semiconductor Corporation BC556/557/558/559/560 PNP EPITAXIAL SILICON TRANSISTOR , result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor bc556 transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
2012 - transistor c 557

Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
Text: BC556/557/558/559/560 - PNP Epitaxial Silicon Transistor October 2012 BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features · Switching and Amplifier · High Voltage: BC556, VCEO = -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3 , Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 Test , C 420 ~ 800 www.fairchildsemi.com BC556/557/558/559/560 - PNP Epitaxial Silicon Transistor


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor c 557 TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
2002 - BC557

Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Text: datasheet Design center High Voltage: BC556 VCEO= -65V Low Noise: BC559, BC560 Complement to BC546.BC550 , , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA , Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC557 transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
2002 - BC559CTA

Abstract: bc560
Text: datasheet Design center High Voltage: BC556 VCEO= -65V Low Noise: BC559, BC560 Complement to BC546.BC550 , , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA , Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559CTA bc560
2002 - of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Text: datasheet Design center High Voltage: BC556 VCEO= -65V Low Noise: BC559, BC560 Complement to BC546.BC550 , , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA , Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
2002 - transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Text: datasheet Design center High Voltage: BC556 VCEO= -65V Low Noise: BC559, BC560 Complement to BC546.BC550 , , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA , Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 transistor BC 557 BC 458 transistor
2002 - BC560

Abstract: BC low noise cbc560 BC559 pnp bc559 transistor
Text: Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS E BC559, B, C BC560 , B, C TO , Page 2 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560 , B, C TO-92 Plastic , specified) DESCRIPTION SYMBOL BC559 BC560 UNITS Collector Emitter Voltage VCEO 30 , (j-c) 83.3 ºC/W Continental Device India Limited Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560 , B, C TO-92 Plastic Package ELECTRICAL


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PDF QSC/L-000019 BC559, BC560, BC559 BC560 C-120 BC560 BC low noise cbc560 BC559 pnp bc559 transistor
2001 - cbc560

Abstract: cbc560B BC560 CDIL bc560 bc559
Text: Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560 , B, C TO-92 Plastic , Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560 , B, C TO-92 Plastic Package Low Noise , BC560 UNITS Collector Emitter Voltage VCEO 30 45 V Collector Base Voltage VCBO , CONDITION Collector Emitter Voltage IC=10mA,IB=0 VCEO BC559 BC560 MIN TYP MAX UNITS 30


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PDF BC559, BC560, BC559 BC560 C-120 cbc560 cbc560B BC560 CDIL bc560 bc559
bc556

Abstract: No abstract text available
Text: : BC559, BC560 · C om plem ent to BC546 . BC 550 PNP EPITAXIAL SILICON TRANSISTOR TO -92 , ollector Base C apacitance N oise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 NF Sym bol IcBO h FE , /560 STATIC CHARACTERISTIC PNP EPITAXIAL SILICON TRANSISTOR 0 - 0 .2 - 0 .4 - 0 .6 , STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Form ative or In Design Definition This datasheet contains the design specifications for product


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556
2002 - transistor BC 458

Abstract: BC 458 transistor transistor bc557 TRANSISTOR BC 560 ic 558 BC558 PNP transistor TRANSISTOR BC 550 b BC559 BC560 transistor bc 558 pnp
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , : BC556/557/558 : BC559/560 : BC559 : BC560 mV mV mV mV -750 -800 VCB= -10V, IE=0, f , . PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 BC 458 transistor transistor bc557 TRANSISTOR BC 560 ic 558 BC558 PNP transistor TRANSISTOR BC 550 b BC559 BC560 transistor bc 558 pnp
2001 - BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , : BC556/557/558 : BC559/560 : BC559 : BC560 mV mV mV mV -750 -800 VCB= -10V, IE=0, f , Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559 transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
2000 - transistor BC 458

Abstract: BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , : BC556/557/558 : BC559/560 : BC559 : BC560 mV mV mV mV -750 -800 VCB= -10V, IE=0, f , Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
1997 - BC560 philips

Abstract: B559C BC560 BC560B BC560C TRANSISTOR BC560C philips bc560c BC559A transistor bc560b transistor bc549
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559; BC560 PNP general , Philips Semiconductors Product specification PNP general purpose transistors BC559; BC560 , Product specification PNP general purpose transistors SYMBOL BC559; BC560 PARAMETER , Product specification PNP general purpose transistors BC559; BC560 PACKAGE OUTLINE Plastic , specification PNP general purpose transistors BC559; BC560 DEFINITIONS Data sheet status Objective


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PDF M3D186 BC559; BC560 BC549 BC550. MAM281 SCA54 117047/00/03/pp8 BC560 philips B559C BC560 BC560B BC560C TRANSISTOR BC560C philips bc560c BC559A transistor bc560b transistor bc549
BC560

Abstract: cbc560 BC559
Text: Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560 , B, C TO , ) DESCRIPTION SYMBOL BC559 BC560 UNITS Collector Emitter Voltage VCEO 30 45 V , Limited PD Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560 , B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage IC=10mA,IB=0 VCEO BC559 BC560 MIN TYP


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PDF BC559, BC560, BC559 BC560 C-120 BC560 cbc560 BC559
2011 - Not Available

Abstract: No abstract text available
Text: PNP SILICON EPITAXIAL PLANAR TRANSISTORS BC556_BC560 TO-92 Plastic Package For switching and AF amplifier application ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC556 BC557 BC560 VCBO 80 50 Collector Base Voltage VCEO 65 45 Collector Emitter Voltage VEBO 5 Emitter Base Voltage IC 100 Collector Current (DC) ICM 200 Collector Current - , Voltage BC556 BC557 , BC560 BC558 , BC559 Collector Emitter Breakdown Voltage BC556 BC557 , BC560


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PDF BC560 BC556 BC557 BC559 BC558 100CDIL C-120 560Rev 231112E
1996 - BC560 MOTOROLA

Abstract: BC560C BC559B BC559 BC560
Text: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC559 BC560 Collector ­ Emitter Voltage VCEO ­30 ­45 Vdc , , IB = 0) Collector ­ Base Breakdown Voltage (IC = ­10 µAdc, IE = 0) V(BR)CEO BC559 BC560 Vdc V(BR)CBO BC559 BC560 Emitter ­ Base Breakdown Voltage (IE = ­10 mAdc, IC = 0) V(BR)EBO


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PDF BC559/D BC559, BC560C BC559 BC560 226AA BC559/D* BC560 MOTOROLA BC560C BC559B BC559 BC560
2001 - Not Available

Abstract: No abstract text available
Text: ON Semiconductort Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current - Continuous Total Device , 1.5 12 ­55 to +150 BC560 ­45 ­50 Unit Vdc Vdc Vdc mAdc BC559B, C BC560C 1 mW mW/°C Watt mW/°C , , IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = ­4.0 Vdc, IC = 0) V(BR)CEO BC559 BC560 V(BR)CBO BC559 BC560 V(BR)EBO ICBO - - IEBO - - - - ­15 ­5.0 ­15 nAdc µAdc nAdc ­30 ­50 ­5.0 - - - - -


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PDF BC559 BC560 BC559B, BC560C 226AA) r14525 BC559B/D
2001 - BC560C

Abstract: BC559 BC559B BC560
Text: Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector­Emitter Voltage VCEO ­30 ­45 Vdc Collector­Base Voltage VCBO ­30 ­50 Vdc Emitter­Base Voltage VEBO ­5.0 Vdc Collector Current - Continuous IC ­100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD , BC559 BC560 Vdc V(BR)CBO BC559 BC560 Emitter­Base Breakdown Voltage (IE = ­10 mAdc, IC = 0


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PDF BC559, BC560C BC559 BC560 r14525 BC559/D BC560C BC559 BC559B BC560
2006 - bc559

Abstract: BC559B BC560
Text: BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector -Emitter Voltage VCEO -30 -45 Vdc Collector -Base Voltage VCBO -30 -50 Vdc Emitter -Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device , BC559 BC560 V(BR)CBO BC559 BC560 Emitter -Base Breakdown Voltage (IE = -10 mAdc, IC = 0


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PDF BC559 BC560 O-226AA) BC559/D bc559 BC559B BC560
Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector-Em itter Voltage VCEO -3 0 -4 5 Vdc Collector-Base Voltage VCBO -3 0 -5 0 Vdc Em itter-Base Voltage Ve b o -5 .0 Vdc , BC559 BC560 Vdc V(BR)CBO BC559 BC560 V(BR)EBO Collector Cutoff Current (V c b = — Vdc


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PDF BC559/D BC559, BC560C BC559 BC560
110 3cg motorola

Abstract: pin configuration transistor 110 3CG BC647 110 3CG transistor 110 3CG bc459c pin configuration transistor BC549 transistor bc237 - bc337 bc459 pin configuration NPN transistor BC560
Text: frequencies. They are also useful as oscillators and general purpose switches. NPN PNP bvceo (Volts) Pd (mW , required Instrumentation, Hi-Fi Preamplifier. NPN PNP bvceo (Volts) Amb. PdmW 25°C Min. Hfe@ lc = 10nA , BC459C BC559C 30 625 100 270 380 800 8 12 0.6 2.5 250 CBE BC550 BC560 45 625 100 — 180 800 8 12 0.6 , Medium Current Switches. PD mW NPN PNP bvceo 25°C lc (mA) H FE @lc Vce Ft Typical (Volts , 2 1 Relevant to PNP . MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-37


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PDF BC337 BC327 BC338 BC328 BC445 BC446 BC447 BC448 BC449 BC450 110 3cg motorola pin configuration transistor 110 3CG BC647 110 3CG transistor 110 3CG bc459c pin configuration transistor BC549 transistor bc237 - bc337 bc459 pin configuration NPN transistor BC560
bc550 bc560

Abstract: BC415 BC548 ,BC558 MPSA18 BC558 BC327 BC337 noise figure BC337-16 CBE BC337-25 CBE MPSA18 BC550 BC547A bc447 BC547B CBE
Text: . NPN PNP BVCEO (Volts) Pd (mW) lc max. (mA> Cont. hfe@ ic VCE ft Typ. MHz nf Max. (dB) Pin Out , required: Instrumentation, Hi-Fi Preamplifier. NPN PNP BVCEO Pd mW HpE 10 JLIA/5 V (Volts) 25 °C , BC549 BC559 30 625 100 BC549B BC559B 30 625 10CI 150 BC549C BC559C 30 625 100 270 BC550 BC560 45 , Stages and Medium Current Switches. NPN PNP bvceo Pd mW lC (mA) Hfe s (Volts) 25 °C Amb. Cont. Min , TRANSISTORS (TO-92) NPN PNP BVCEO (Volts) Pd mW 25 °C Amb. lC max. (mA) Cont. hfe@ Min. MIPSL01 2N5400


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PDF TRAN50 bc550 bc560 BC415 BC548 ,BC558 MPSA18 BC558 BC327 BC337 noise figure BC337-16 CBE BC337-25 CBE MPSA18 BC550 BC547A bc447 BC547B CBE
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