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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

BC557 TRANSISTOR REPLACEMENT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - BC558B

Abstract: bc560
Text: BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • • • â , Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 www.fairchildsemi.com 1 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor April 2014 Stresses exceeding , www.fairchildsemi.com 2 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor Absolute , €” PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC556 / BC557 / BC558


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PDF BC556 BC557 BC558 BC559 BC560 BC556, BC559, BC546, BC547, BC558B bc560
2010 - operation of BC557 TRANSISTOR

Abstract: TRANSISTOR C 557 B BC557 SWITCHING TRANSISTOR transistor c 557 transistor 557 b B 557 PNP TRANSISTOR transistor bc558 features free BC557 of pnp transistor BC557 BC556
Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , /557/558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified , stress ratings only and functional device operation is not implied. BC556 BC557 BC558 BC556 BC557 , ) PARAMETER SYMBOL BC556 Collector-Emitter Breakdown Voltage BC557 BC558 BC556 Collector-Base Breakdown Voltage BC557 BC558 Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain


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PDF BC556/557/558 BC556, BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K BC556L-x-T92-B BC556L-x-T92-K operation of BC557 TRANSISTOR TRANSISTOR C 557 B BC557 SWITCHING TRANSISTOR transistor c 557 transistor 557 b B 557 PNP TRANSISTOR transistor bc558 features free BC557 of pnp transistor BC557 BC556
2002 - BC557

Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557 /560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557 /560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power , Transistor Contents ·Features ·Applications ·Product status/pricing/packaging ·Order Samples Features z z z BC557 Related Links Request samples How to order products ·Qualification Support Datasheet Download


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC557 transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
2009 - Transistors

Abstract: BC5473 operation of BC557 TRANSISTOR of pnp transistor BC557 bc557 BC547 NXP BC547 sot54 BC557B BC556 BC547
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general , Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547 , leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the , V BC557 VCEO - BC557 - -45 V - -5 V collector-emitter voltage


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PDF M3D186 BC556; BC557 BC546 BC547. MAM281 R75/04/pp8 Transistors BC5473 operation of BC557 TRANSISTOR of pnp transistor BC557 bc557 BC547 NXP BC547 sot54 BC557B BC556 BC547
2004 - BC557 application note

Abstract: BC557 free BC557 philips BC557B BC557 TRANSISTOR application BC5473 BC556A BC547 BC557 pin SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general , Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547 , leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the , V BC557 VCEO - BC557 - -45 V - -5 V collector-emitter voltage


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PDF M3D186 BC556; BC557 BC546 BC547. MAM281 SCA76 R75/04/pp8 BC557 application note BC557 free BC557 philips BC557B BC557 TRANSISTOR application BC5473 BC556A BC547 BC557 pin SC-43A
1997 - BC548 or BC558B TRANSISTOR

Abstract: bc557 BC547 operation of BC557 TRANSISTOR mar 709 BC548 BC547 sot54 bc547 collector base emitter bc557b BC557 application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 ; BC558 PNP general , transistors BC556; BC557 ; BC558 FEATURES PINNING · Low current (max. 100 mA) PIN · Low , General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage PNP transistor in a , V BC557 - -50 V - -30 V - -65 V BC558 VCEO collector-emitter voltage open base BC556 BC557 - -45 V BC558 - -30 V - -200 mA -


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PDF M3D186 BC556; BC557; BC558 BC546, BC547 BC548. BC548 or BC558B TRANSISTOR bc557 operation of BC557 TRANSISTOR mar 709 BC548 BC547 sot54 bc547 collector base emitter bc557b BC557 application note
2001 - cbc550c

Abstract: transistor BC557 base collector emitter BC550C TRANSISTOR hFE 8 BC558B 331 TRANSISTOR operation of BC557 TRANSISTOR bc550c BC557 T1 BC558 TRANSISTOR
Text: 0.6 - 900 dB NF1 NF2 2.5 10 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model , * COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , ) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 V(BR)CEO V -65 -45 -30 -80


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PDF BC550C O-226AA) BC556B BC556BZL1 BC557AZL1 BC557B BC557BRL1 BC557BZL1 BC557BZL1G BC557CZL1 cbc550c transistor BC557 base collector emitter BC550C TRANSISTOR hFE 8 BC558B 331 TRANSISTOR operation of BC557 TRANSISTOR bc550c BC557 T1 BC558 TRANSISTOR
2004 - pin configuration pnp transistor BC557

Abstract: transistor IC 557B transistor c 557B pin configuration transistor BC557 557B BC557B c 557b BC557 pin out transistors 557b transistor BC557 base collector emitter
Text: BC557 , 557B General Purpose Transistor Features: · PNP Silicon Planar Epitaxial Transistors. · , BC557B BC557B Unit V 31/05/05 V1.0 BC557 , 557B General Purpose Transistor Electrical , 31/05/05 V1.0 BC557 , 557B General Purpose Transistor Specifications VCEO maximum (V) VCBO , /05/05 V1.0 BC557 , 557B General Purpose Transistor Notes: International Sales Offices , : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 BC557 , 557B


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PDF BC557, pin configuration pnp transistor BC557 transistor IC 557B transistor c 557B pin configuration transistor BC557 557B BC557B c 557b BC557 pin out transistors 557b transistor BC557 base collector emitter
BC557

Abstract: bc556 of pnp transistor BC557 BC557 application note Transistor Bc556 of bc557 BC557 PNP TRANSISTOR PNP Transistor BC557 BC558 PNP transistor BC558 NPN Transistor
Text: TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type , BC556 VcBO -80 V BC557 -50 BC558 -30 Collector-Emitter Voltage BC556 VcEO -65 V BC557 -45 BC558 -30 Emitter-Base Voltage BC556 Vebo -5 V BC557 -5 BC558 -5 Collector Current BC556 Ic -100 mA BC557 -100 BC558 -100 Emitter Current BC556 Ie 100 mA BC557 100 BC558 100 , (Note) BC557 hfe Vce=-5V, Ic=-2mA 110 - 800 BC558 110 - 800 Collector-Emitter Saturation Voltage


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PDF BC556/7/8 BC546/547/548. BC556 BC557 BC558 BC557 of pnp transistor BC557 BC557 application note Transistor Bc556 of bc557 BC557 PNP TRANSISTOR PNP Transistor BC557 BC558 PNP transistor BC558 NPN Transistor
pin configuration pnp transistor BC557

Abstract: pin configuration pnp transistor BC558 BC557 pin out pin configuration transistor BC557 pin configuration transistor bc558 transistor bc557 pins details pin out TRANSISTOR bc557 information of BC558 bc556a T1 BC558 TRANSISTOR
Text: BC557 , A, B, C BC558, A, B, C TO-92 Plastic Package PNP SILICON PLANAR EPITAXIAL TRANSISTORS , SYMBOL BC556 BC557 BC558 UNITS 65 80 80 5 45 50 50 5 100 200 200 200 500 , Limited Datasheet V 45 30 BC557 BC558 65 V V Page 1 of 5 PNP SILICON PLANAR , 80 V 50 30 BC557 BC558 Emitter Base Voltage BC556, A, B, C BC557 , A, B, C BC558, A , BC556 BC557 BC558 BC556 BC557 BC558 ICES VCE =80V VCE =50V VCE =30V VCE =80V,Tj=125O C


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PDF ISO/TS16949 BC556, BC557, BC558, BC556 BC557 BC558 C-120 pin configuration pnp transistor BC557 pin configuration pnp transistor BC558 BC557 pin out pin configuration transistor BC557 pin configuration transistor bc558 transistor bc557 pins details pin out TRANSISTOR bc557 information of BC558 bc556a T1 BC558 TRANSISTOR
BC557

Abstract: BC557 SWITCHING TRANSISTOR BC557 application note of bc557 npn bc557 of pnp transistor BC557 BC558 NPN Transistor BC558 NPN transistor bc558 BC557 TRANSISTOR application
Text: SEMICONDUCTOR TECHNICAL DATA BC556/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC556 VcBO -80 V BC557 -50 BC558 -30 Collector-Emitter Voltage BC556 VcEO -65 V BC557 -45 BC558 -30 Emitter-Base Voltage BC556 Vebo -5 V BC557 -5 BC558 -5 Collector Current BC556 Ic -100 mA BC557 -100 BC558 -100 Emitter Current BC556 Ie 100 mA BC557 100 BC558 100 Collector Power


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PDF BC556/7/8 BC546/547/548. BC556 BC557 BC558 BC557 BC557 SWITCHING TRANSISTOR BC557 application note of bc557 npn bc557 of pnp transistor BC557 BC558 NPN Transistor BC558 NPN transistor bc558 BC557 TRANSISTOR application
2009 - TRANSISTOR C 557 B

Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 transistor 557 b B 557 PNP TRANSISTOR free BC557 of pnp transistor BC557 transistor bc558 features transistor c 557 transistor c 558
Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , Box Bulk Tape Box Bulk 1 of 4 QW-R201-051.B BC556/557/558 PNP SILICON TRANSISTOR , BC557 BC558 BC556 BC557 BC558 THERMAL DATA PARAMETER Junction to Ambient Junction to Case , otherwise specified) PARAMETER SYMBOL BC556 Collector-Emitter Breakdown Voltage BC557 BC558 BC556 Collector-Base Breakdown Voltage BC557 BC558 Emitter-Base Breakdown Voltage Collector Cut-Off Current DC


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PDF BC556/557/558 BC556, BC556L/BC557L/BC558L BC556G/BC557G/BC558G BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K TRANSISTOR C 557 B operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 transistor 557 b B 557 PNP TRANSISTOR free BC557 of pnp transistor BC557 transistor bc558 features transistor c 557 transistor c 558
BC556B

Abstract: BC557 MOTOROLA c557b operation of BC557 TRANSISTOR bc557c BC558B transistor IC 557B bc557 558B TRANSISTOR BC557C
Text: BC556.B BC557 ,A,B,C BC558B 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C , Storage Junction Temperature Range Symbol VCEO VCBO vebo BC556 -6 5 -8 0 BC557 -4 5 -5 0 -5 , = 0) v (BR)CEO BC556 BC557 BC558 v (BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 'c e s BC556 BC557 BC558 BC556 BC557 BC558 - - - V -6 5 -4 5 -3 0 - C ollecto r-B a se Breakdown Voltage , Small-Signal Transistors, FETs and Diodes Device Data 2-123 BC556,B BC557 ,A,B,C BC558B ELECTRICAL


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PDF BC556 BC557 BC558B BC556 BC557 BC558 BC556B BC557 MOTOROLA c557b operation of BC557 TRANSISTOR bc557c BC558B transistor IC 557B 558B TRANSISTOR BC557C
2002 - pin configuration pnp transistor BC557

Abstract: pin configuration pnp transistor BC558 BC557 pin description pin out TRANSISTOR bc557 transistor bc557 pins details information of BC558 uses of bc557 BC557 pin out BC557 transistor pin details T1 BC558
Text: PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC556, A, B, C BC557 , A, B, C BC558, A, B, C TO , specified) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS 65 80 80 5 45 50 50 5 100 , Limited Datasheet V 45 30 BC557 BC558 65 V V Page 1 of 5 PNP SILICON PLANAR , 80 V 50 30 BC557 BC558 Emitter Base Voltage BC556, A, B, C BC557 , A, B, C BC558, A , BC556 BC557 BC558 BC556 BC557 BC558 ICES VCE =80V VCE =50V VCE =30V VCE =80V,Tj=125O C


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PDF BC556, BC557, BC558, BC556 BC557 BC558 C-120 pin configuration pnp transistor BC557 pin configuration pnp transistor BC558 BC557 pin description pin out TRANSISTOR bc557 transistor bc557 pins details information of BC558 uses of bc557 BC557 pin out BC557 transistor pin details T1 BC558
2007 - BC557

Abstract: bc558b BC556BG BC557 transistor pin details
Text: Collector - Emitter Voltage Value VCEO Vdc VCBO Vdc −80 −50 −30 BC556 BC557 BC558 Emitter - Base Voltage 3 EMITTER −65 −45 −30 BC556 BC557 BC558 Collector - , = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON , ˆ’100 mAdc, VCE = −5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series


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PDF BC556B, BC557A, BC558B BC556 BC557 BC558 BC556B/D BC557 bc558b BC556BG BC557 transistor pin details
2001 - BC556B

Abstract: bc558b bc557 transistor BC556b
Text: BC556B, BC557 , A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , BC556B BC556BRL1 BC556BZL1 BC557 BC557ZL1 BC557A BC557AZL1 BC557B Package TO­92 TO­92 TO­92 TO­92 TO , BC556B, BC557 , A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES


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PDF BC556B, BC557, BC558B, BC556 BC557 BC558 BC556B bc558b transistor BC556b
2006 - BC557C

Abstract: transistor bc558 features
Text: !"# BC556,B BC557 ,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW A Features Through , Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base , Emitter Breakdown Voltage (IC = ­2.0 mAdc, IB = 0) BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ­5.0 ­5.0 ­5.0 - - - - - - ­80 ­50 ­30 - - - - - - V I CBO V(BR)CEO ­65 , µAdc, VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C


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PDF BC556 BC557 BC558 625mW 150oC BC557C transistor bc558 features
2001 - BC556B

Abstract: bc558b BC557 TRANSISTOR application bc557 free BC557 BC557 application note transistor BC556b 6885_BC556B BC557 pin out transistor BC557 base collector emitter
Text: BC556B, BC557 , A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , BC556B BC556BRL1 BC556BZL1 BC557 BC557ZL1 BC557A BC557AZL1 BC557B Package TO­92 TO­92 TO­92 TO­92 TO , BC556B, BC557 , A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES


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PDF BC556B, BC557, BC558B, BC556 BC557 BC558 BC556B bc558b BC557 TRANSISTOR application free BC557 BC557 application note transistor BC556b 6885_BC556B BC557 pin out transistor BC557 base collector emitter
2006 - bc557 and application

Abstract: No abstract text available
Text: !"# BC556,B BC557 ,A,B,C BC558,B PNP Silicon Amplifier Transistor Features Through Hole Package , Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base , CHARACTERISTICS Collector ­ Emitter Breakdown Voltage (IC = ­2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ­5.0 ­5.0 ­5.0 - - - - - - ­80 ­50 ­30 - - - , µAdc, VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C


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PDF BC556 BC557 BC558 150oC 625mW bc557 and application
1999 - BC547

Abstract: transistor BC557b BC546 BC557C BC557B BC557 BC556B BC556A BC556 about transistor bc547
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general , Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547 , collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC556 -80 V BC557 - -50 V BC556 - -65 V BC557 VCEO - - -45 V collector-emitter voltage


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PDF M3D186 BC556; BC557 BC546 BC547. MAM281 SCA63 115002/00/03/pp8 BC547 transistor BC557b BC557C BC557B BC557 BC556B BC556A BC556 about transistor bc547
2004 - TRANSISTOR C 557 B

Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b bc556 transistor Transistor Bc556 transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
Text: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-base voltage : BC556 : BC557 : BC558 Collector-emitter voltage : BC556 : BC557 : BC558 Emitter-base voltage Collector current (DC , BC556/557/558 PARAMETER Noise Figure NF PNP EPITAXIAL SILICON TRANSISTOR SYMBOL TEST CONDITIONS , -051,A UTC BC556/557/558 TYPICAL CHARACTERISTICS PNP EPITAXIAL SILICON TRANSISTOR UTC


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PDF BC556/557/558 BC556, BC556 BC557 BC558 QW-R201-051 TRANSISTOR C 557 B transistor c 557 B 557 PNP TRANSISTOR transistor 557 b bc556 transistor Transistor Bc556 transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
2006 - bc557

Abstract: 558B
Text: !"# BC556,B BC557 ,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW A Features Through , Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base , CHARACTERISTICS Collector ­ Emitter Breakdown Voltage (IC = ­2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ­5.0 ­5.0 ­5.0 - - - - - - ­80 ­50 ­30 - - - , µAdc, VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C


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PDF BC556 BC557 BC558 625mW 150oC 558B
2001 - operation of BC557 TRANSISTOR

Abstract: BC557 pin out BC558B BC556B uses of bc557 bc557 BC557 application note free BC557 BC557A transistor BC556b
Text: BC556B, BC557 , A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com , BC556 BC557 BC558 Collector-Base Voltage Vdc ­65 ­45 ­30 VCBO BC556 BC557 BC558 , Temperature Range 5000 Units/Box BC557AZL1 Watts mW/°C TO­92 BC557 1.5 12 Shipping , Order Number: BC556/D BC556B, BC557 , A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25 , Leakage Current (VCES = ­40 V) (VCES = ­20 V) (VCES = ­20 V, TA = 125°C) V(BR)CEO BC556 BC557


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PDF BC556B, BC557, BC558B, BC556 BC557 BC558 r14525 operation of BC557 TRANSISTOR BC557 pin out BC558B BC556B uses of bc557 bc557 BC557 application note free BC557 BC557A transistor BC556b
BC557 MOTOROLA

Abstract: BC557C BC558B BC557 BC557A operation of BC557 TRANSISTOR BC556B transistor BC556b BC557 circuits DZ200
Text: MAXIMUM RATINGS Rating Symbol BC5S6 BC557 BC558 Unit Collector-Emitter Voltage VCEO -65 -45 -30 Vdc , ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) BC556,B BC557 ,A,B,C BC558B CASE 29-04, STYLE , mAdc, lB = 0) BC556 -65 — — BC557 -45 — — BC558 -30 — — Collector-Base Breakdown Voltage V(BR)CBO V dC = -100 ftAdc) BC556 -80 — — BC557 -50 — — BC558 -30 — — Emitter-Base Breakdown Voltage V(BR)EBO V (lE = -100 MAdc, lC = 0) BC556 -5.0 — — BC557 -5.0 — â


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PDF BC557 BC558 BC556 BC558B 150oC, BC557 MOTOROLA BC557C BC557A operation of BC557 TRANSISTOR BC556B transistor BC556b BC557 circuits DZ200
2007 - BC557 transistor pin details

Abstract: transistor marking bc557 BC556B bc557bg BC557BRL1G BC556BG BC557A pin diagram of transistor BC558 BC557 BC558
Text: Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA , BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series


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PDF BC556B, BC557A, BC558B BC556 BC557 BC558 BC556B/D BC557 transistor pin details transistor marking bc557 BC556B bc557bg BC557BRL1G BC556BG BC557A pin diagram of transistor BC558 BC557 BC558
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