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Part Manufacturer Description Datasheet Download Buy Part
LT1013MJ8/883B Linear Technology IC DUAL OP-AMP, 550 uV OFFSET-MAX, CDIP8, CERDIP-8, Operational Amplifier
LT1212CS16 Linear Technology IC QUAD OP-AMP, 550 uV OFFSET-MAX, 14 MHz BAND WIDTH, PDSO16, Operational Amplifier
LT1214CS16 Linear Technology IC QUAD OP-AMP, 550 uV OFFSET-MAX, 28 MHz BAND WIDTH, PDSO16, Operational Amplifier
LT1214CN14 Linear Technology IC QUAD OP-AMP, 550 uV OFFSET-MAX, 28 MHz BAND WIDTH, PDIP14, Operational Amplifier
LT1211CJ8 Linear Technology IC DUAL OP-AMP, 550 uV OFFSET-MAX, 14 MHz BAND WIDTH, CDIP8, Operational Amplifier
LT1213CJ8 Linear Technology IC DUAL OP-AMP, 550 uV OFFSET-MAX, 28 MHz BAND WIDTH, CDIP8, Operational Amplifier

BC549/550 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn Amplifier with transistor BC549 TO92-3 Package Dimensions bc548 fairchild transistor BC 548 Data
Text: BC546/547/548/549/ 550 BC546/547/548/549/ 550 Switching and Applications · High Voltage: BC546 , noted Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/ 550 : BC548/549 Value 80 50 30 65 45 , : BC546 : BC547/ 550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/ 550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/ 550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


Original
PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc549 transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn Amplifier with transistor BC549 TO92-3 Package Dimensions bc548 fairchild transistor BC 548 Data
BC54B

Abstract: bc546 equivalent bc547 equivalent bc549 equivalent bc556 equivalent BC550 equivalent bc548 equivalent bc550 bc550 noise figure T0-92F
Text: BC 5 4 6 through BC 550 MÜ NPN SILICON AF SMALL SIGNAL TRANSISTORS THE BC546 THROUGH BC550 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF,SMALL SIGNAL AMPLIFIER STAGES AND , PARAMETER Emitter-Base Breakdown Voltage BC546,547 BC548,549, 550 Collector Cutoff Current , Boise Figure BC546,547»548 BC549, 550 Noise Figure BC549 only BC550 only fT 250 Cob NF 2.7 4.5 , =2Ka f=10Hz-50Hz '' Flicker Noise Voltage Referred to Base En BC549» 550 only : v CCo*i55: jiY


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PDF BC546 BC550 BC556 BC560. BC549, T0-92F BC547 BC548 BC54B bc546 equivalent bc547 equivalent bc549 equivalent bc556 equivalent BC550 equivalent bc548 equivalent bc550 noise figure T0-92F
bc54b

Abstract: EQUIVALENT TRANSISTOR bc547 bc547 equivalent BC541 bc548 equivalent Transistor Bc54 BC241 HE bc548 BC550 transistor bc541
Text: BC 546 through BC 550 NPN SILICON AF SMALL SIGNAL TRANSISTORS THE BC546 THROUGH BC550 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF_ SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED , BC548,549, 550 5 v Collector Cutoff Current ICBO 15 nA VCB-30V IE=0 5 jiA VCB=30? IB-0 TA , dB IC=0.2mA VCE=5V Rq=2Kìi f=lkHz Af=200Hz Jtk BC549, 550 1.4 4 dB Noise Figure BC549 only NF 1.2 , Referred to Base BC549, 550 only In 35: jiY Iq=0,2mA VCE=5V RG»2K£1 f=10Hz-505z FLICKER NOISE MEASUREMENT


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PDF BC546 BC550 BC556 BC560. BC549, T0-92F BC547 BC548 bc54b EQUIVALENT TRANSISTOR bc547 bc547 equivalent BC541 bc548 equivalent Transistor Bc54 BC241 HE bc548 transistor bc541
2001 - BC546 "cross reference"

Abstract: transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference BC547ATA bc550 of transistor BC 548 bc549 Amplifier with transistor BC549
Text: BC546/547/548/549/ 550 BC546/547/548/549/ 550 Switching and Applications · High Voltage: BC546 , noted Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/ 550 : BC548/549 Value 80 50 30 65 45 , : BC546 : BC547/ 550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/ 550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/ 550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


Original
PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC546 "cross reference" transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference BC547ATA bc550 of transistor BC 548 bc549 Amplifier with transistor BC549
Not Available

Abstract: No abstract text available
Text: BC549B/550B BC549C/550C BC549/ 550 IC=10mA, IB=0.5mA IC=10mA, IB=See Note (1) *IC=100mA, IB=5mA IC , =0, f=1MHz Collector Base Capacitance hfe IC=2mA, VCE=5V, f=1KHz Small Signal Current BC549/ 550


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PDF BC549 BC550 BC550 BC549 C-120 550Rev 081205E
BC550

Abstract: bc549 equivalent
Text: PHILIPS/DISCRETE bTE D ■bbSBTBl 00E7SbB 5EE B C 549 B C 550 Silicon planar epitaxial , PHILIPS/]>ISCRETE BC549 BC 550 0,01 0,1 bTE T > 1 bbS3T31 □DETSb'J Mb'! H A P X 10 , ]> BC549 BC 550 Curves o f constant noise figure Fig. 13. 156 June 1992 \ r bbsa^ai


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PDF 00275bb BC550 BC549 0D27S71 DD27573 BC550 bc549 equivalent
bc546 equivalent

Abstract: BC550 equivalent bc547 equivalent bc548 equivalent BC547 hie hre hfe BC550 bc550 noise figure equivalent bc548 bc550 bc560 NPN transistor bc548
Text: leads are kept at ambient temperature at a distance of 2 mm from case BC 546.BC 550 300 200 100 , that leads are kept at ambient temperature at a distance of 2 mm from case BC 546.BC 550 10" IO"' 10-4 10 s 54 BC546 . BC550 DC current gain versus collector current BC 546. BC 550 Collector , .BC 550 lAc- =10 V c \ 2Vn A J y A f


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PDF BC546 BC550 BC546 BC547 BC548 BC549 BC550 BC556. BC560 bc546 equivalent BC550 equivalent bc547 equivalent bc548 equivalent BC547 hie hre hfe bc550 noise figure equivalent bc548 bc550 bc560 NPN transistor bc548
2006 - CBC550

Abstract: BC549 BC549 TO-92 pin configuration NPN transistor BC550 BC550 K/BC549
Text: /550B BC549C/550C BC549/ 550 IC=10mA, IB=0.5mA IC=10mA, IB=See Note (1) *IC=100mA, IB=5mA IC , =0, f=1MHz Collector Base Capacitance hfe IC=2mA, VCE=5V, f=1KHz Small Signal Current BC549/ 550


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PDF BC549 BC550 BC549 C-120 550Rev 081205E CBC550 BC549 TO-92 pin configuration NPN transistor BC550 K/BC549
BC649

Abstract: BC550 MOTOROLA bc649c BC549 BC550 bc549c BC549B VQE-10 bc550 noise figure BC549 NPN transistor
Text: MOTOROLA SC XSTRS/R F 12 E D MAXIMUM RATINGS Rating Symbol BC 549 BC 550 Unit Collector-Emitter Voltage VCEO 30 45 Vdc Collector-Base Voltage VCBO 30 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc Collector Current - Continuous ic 100 mAdc Total Device Dissipation @Ta = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @Tc = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C Operating and , ) BC549A/550A BC549B/550B BC549C/550C BC549/ 550 hFE 100 100 110 200 420 110 150 270 290 500 220 450 800 800


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PDF BC549, BC550, O-226AA) BC649 BC550 MOTOROLA bc649c BC549 BC550 bc549c BC549B VQE-10 bc550 noise figure BC549 NPN transistor
transistor C 548 B

Abstract: transistor c 548 547 TRANSISTOR BC547 bc548 transistor transistor b 548 bc546 fairchild transistor bc547 transistor 547 b C 548 B
Text: BC546/547/548/549/ 550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER « HIGH , : BC547/ 550 50 V : BC548/549 30 V Collector-Emitter Voltage VcEO : BC546 65 V : BC547/ 550 45 V : BC548/549/ 550 30 V Emitter-Base Voltage Vebo V : BC546/547 6 V : BC548/549/ 550 5 V Collector , VEB= =0.5V, f =1 MHz 9 PF Noise Figure : BC546/547/548 NF Vce= =5V, lc= 200nA 2 10 dB : BC549/ 550 , SEMICONDUCTOR tm ©1999 Fairchild Semiconductor Corporation BC546/547/548/549/ 550 NPN EPITAXIAL SILICON


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor C 548 B transistor c 548 547 TRANSISTOR BC547 bc548 transistor transistor b 548 bc546 fairchild transistor bc547 transistor 547 b C 548 B
CB 548 transistor

Abstract: transistor C 548 B
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/ 550 SWITCHING AND AMPLIFIER • HIGH , 65 45 30 Collector Base Voltage : BC546 : BC547/ 550 : BC548/549 Collector-Emitter Voltage : BC546 : BC547/ 550 : BC548/549/ 550 Emitter-Base Voltage : BC546/547 : BC548/549/ 550 Collector , Capacitance Noise Figure : BC546/547/548 C cB O Ic B O h FE C ebo NF : BC549/ 550 : BC549 , dB 1.4 3 dB NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/ 550 STATIC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 CB 548 transistor transistor C 548 B
BC549 NPN transistor

Abstract: BC550 BC549 Amplifier with transistor bc549 transistor bc549 transistor bc550 bc550 noise figure
Text: 1 K El L SFMTCONDITCTOR BC549/ 550 EPITAXIAL PLANAR NPN TRANSISTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC549 VcBO 30 V BC550 50 Collector- Emitter Voltage BC549 VcEO 30 V BC550 45 Emitter-Base Voltage Vebo 5 V Collector Current Ic 100 mA Collector Power Dissipation Pc 625 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55-150 °C 72l


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PDF BC549/550 BC549 BC550 BC55br 10j/A, BC549 NPN transistor BC550 Amplifier with transistor bc549 transistor bc549 transistor bc550 bc550 noise figure
2002 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR BC549/ 550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N ) BC549 Collector-Base Voltage 30 VCBO BC550 BC549 Collector-Emitter Voltage RATING 50 30 VCEO 45 UNIT V H F F V L BC550 J SYMBOL VEBO 5 V Collector Current IC 100 PC 625 Tj 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45


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PDF BC549/550 BC559/560. BC549 BC550 100mA, 100MHz
2008 - Amplifier with transistor bc549

Abstract: BC550 BC549 BC549 NPN transistor transistor bc550 bc549 equivalent BC549 DATASHEET bc549 noise figure LBC550 pnp bc559 transistor
Text: SEMICONDUCTOR BC549/ 550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING (Ta=25 G ) J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 F V 45 L BC550 H F 30 VCEO Collector-Emitter Voltage UNIT VEBO 5 V Collector Current IC 100 PC 625 Tj 150 Tstg 3 mW Junction


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PDF BC549/550 BC559/560. BC550 BC549 100mA, 100MHz Amplifier with transistor bc549 BC550 BC549 BC549 NPN transistor transistor bc550 bc549 equivalent BC549 DATASHEET bc549 noise figure LBC550 pnp bc559 transistor
transistor vc 548

Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 547 transistor C 548 B transistor b 548 transistor c 548 c TRANSISTOR BC 550 b
Text: BC546/547/548/549/ 550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER • HIGH , V BC547/ 550 50 V BC548/549 30 V Collector Emitter Voltage VceO BC546 65 V BC547/ 550 45 V BC548/549 30 V Emitter-Base Voltage Vebo V BC546/547 6 V BC548/549/ 550 5 V , 1MHz 9 PF Noise Figure :BC546/547/548 NF VCe = 5V, lc =200^A, 2 10 dB :BC549/ 550 f=1 KHz Rg , OOESDbD T1D ■This Material Copyrighted By Its Respective Manufacturer BC546/547/548/549/ 550 NPN


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC546 BC547/550 BC548/549 transistor vc 548 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 547 transistor C 548 B transistor b 548 transistor c 548 c TRANSISTOR BC 550 b
BC550

Abstract: Amplifier with transistor BC549 C420-800 bc549 transistor bc549 BC549 NPN transistor
Text: KEC SEMICONDUCTOR BC549/ 550 m TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • For Complementary with PNP Type BC559/560. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC549 VcBO 30 V BC550 50 Collector- Emitter Voltage BC549 VcEO 30 V BC550 45 Emitter-Base Voltage Vebo 5 V Collector Current Ic 100 mA Collector Power Dissipation Pc 625 mW Junction Temperature Tj 150 °C Storage Temperature Range Tsig


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PDF BC549/550 BC559/560. BC549 BC550 10juA, 10j/A, 100mA, BC550 Amplifier with transistor BC549 C420-800 transistor bc549 BC549 NPN transistor
2012 - BC549

Abstract: bc550 Amplifier with transistor BC549 transistor BC550 bc549 noise figure transistor BC549 hfe transistor BC549 bc550 noise figure BC549 NPN transistor B200-450
Text: SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURE ·For Complementary with PNP Type BC559/560. BC549/ 550 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25) CHARACTERISTIC BC549 Collector-Base Voltage BC550 BC549 Collector-Emitter Voltage BC550 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC PC Tj Tstg VCEO 45 5 100 625 150 -55150 V mA mW VCBO 50 30 V SYMBOL RATING 30 V UNIT ELECTRICAL CHARACTERISTICS


Original
PDF BC559/560. BC549/550 BC549 BC550 Amplifier with transistor BC549 transistor BC550 bc549 noise figure transistor BC549 hfe transistor BC549 bc550 noise figure BC549 NPN transistor B200-450
BC550

Abstract: BC549 BC547 BC548 BC546 BC 546 THROUGH BC 550 bc550 noise figure BC547 circuits BC560 BC-546
Text: BC 546 through BC 550 rar SILICON AF SMALL SIGNAL TRANSISTORS THE BC546 THROUGH BC550 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF,SHALL SIGNAL AMPLIFIER STAGES AND DIRECT COtfPLED*CIRCUITS. THEY ARE COMPLEMENTARY TO BC556 THROUGH BC560, THE BC549, BC550 ARE CHARACTERIZED; BY LOW NOISE FIGURE. CASE TO-92F CEB ABSOLUTE MAXIMÜH RATINGS BC546 BC547 BC548 BC549 BC550 Collector-Base Voltage vcbo 80V 50V 30V 30V 50V Collector-Emitter Voltage (VBE=0) VCES 80V 50V 30V 30V 50V Collector-Emitter


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PDF BC546 BC550 BC556 BC560, BC549, O-92F BC547 BC548 BC549 BC 546 THROUGH BC 550 bc550 noise figure BC547 circuits BC560 BC-546
2002 - BC547

Abstract: transistor bc547 specifications transistor bc547 applications bc547 marking transistor transistor BC 547B information of BC547 Use of BC547 transistor transistor BC 458 BC547ATA BC547-J22Z
Text: BC546/547/548/549/ 550 BC546/547/548/549/ 550 Switching and Applications · High Voltage: BC546 , noted Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/ 550 : BC548/549 Value 80 50 30 65 45 , : BC546 : BC547/ 550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/ 550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/ 550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


Original
PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC547 transistor bc547 specifications transistor bc547 applications bc547 marking transistor transistor BC 547B information of BC547 Use of BC547 transistor transistor BC 458 BC547ATA BC547-J22Z
transistor 2sc 548

Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 649 Bc 648 BC649 transistor 2sc 546 BC5481
Text: SIE6 _ r-2-7-2/ BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D- BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages (10 A 3 DIN 41868). They are intended for use in AF input and driver stages (BC 549; BC 550 for low-noise , BC5501> Q62702-C691 BC 550 B Q62702-C691 -V1 BC 550 C Q62702-C691-V2 0,4-0,4 2,5 max. =U~ t" b c , BC 548, BC 550 BC 550 hFE group VI A B C k hF e hFE hfs mA UJlB Idh Idh Idh 0.01 90 150 270 2


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PDF BC5461Â Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 BC5481Â transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 649 Bc 648 BC649 transistor 2sc 546 BC5481
c550b

Abstract: c550 bc549c
Text: SEMICONDUCTOR T E C H N I C A L DATA LOW N O ISE A M PL IFIE R APPLIC ATIO N. BC549/ 550 E P I T A X I A L P L A N A R NPN T R A N S I S T O R FEA T U RE · For C om plem entary w ith PN P T , oise Fig rc B C 550 N ote : h FE C lassi ication A: 110 -220, B :2 0 0 - 450, NF Rg= 10k Q , = lk H C , M A X. - UN IT B C 550 B C 549 V (B R )C B O lc =10/iA , IE=0 w yß 50 5.0 110 0.55 - V - V - B C 550 V (B R )E B O IC B O I E= 10/iA , Ic =0 V CB= 30V , Ii;=0 Ic = 2m A , V ce


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PDF BC549/550 BC549 10/iA 200/iA c550b c550 bc549c
2002 - transistor BC 458

Abstract: BC 458 transistor transistor BC 548 Data BC546BTA bc546 fairchild bc546 TRANSISTOR B 546b bc549 of transistor BC548 bc 547 b transistor
Text: BC546/547/548/549/ 550 BC546/547/548/549/ 550 Switching and Applications · High Voltage: BC546 , noted Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/ 550 : BC548/549 Value 80 50 30 65 45 , : BC546 : BC547/ 550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/ 550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/ 550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


Original
PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor BC 458 BC 458 transistor transistor BC 548 Data BC546BTA bc546 fairchild bc546 TRANSISTOR B 546b bc549 of transistor BC548 bc 547 b transistor
2002 - APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input NPN Transistor BC548B
Text: BC546/547/548/549/ 550 BC546/547/548/549/ 550 Switching and Applications · High Voltage: BC546 , noted Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/ 550 : BC548/549 Value 80 50 30 65 45 , : BC546 : BC547/ 550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/ 550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/ 550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


Original
PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 APPLICATION OF BC548 transistor Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input NPN Transistor BC548B
transistor C 548 B

Abstract: TR BC 548 transistor c 548
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/ 550 SWITCHING AND AF AMPLIFIER • HIGH , MAXIMUM RATINGS (Ta=25°C ) Symbol Characteristic Collector Base Voltage :BC546 :BC 547/ 550 :BC 548/549 Collector Emitter Voltage :BC546 :BC 547/ 550 :BC548/549 Emitter-Base Voltage :BC546/547 :B C 548/549/ 550 Collector Current (DC) Collector Dissipation Junction Temperature Storage , Capacitance Emitter Base Capacitance Noise Figure :B C 546/547/548 :BC549/ 550 :BC549 :BC550 Cebo


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BCS56 BC546 BC548/549 BC546/547 transistor C 548 B TR BC 548 transistor c 548
transistor c 548

Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
Text: BC546/547/548/549/ 550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V · L O W NOISE , RATINGS < TA =25t) C h aracte ristic Collector Base Voltage .BC546 :BC547/ 550 :BC548/549 Collector-Emltter Voltage BC546 BC547/ 550 BC548/549/ 550 Emitter-Base Voltage :BC546/547 :BC548/549/ 550 Collector , /547/548 :BC549/ 550 :BC549 :BC550 NF Sym b o l IcBO h FE T est C o n d itio n s M in Typ M , / 550 NPN EPITAXIAL SILICON TRANSISTOR T R A N SFER CHAR ACTERISTIC 0 4 8 12 16 20


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PDF BC546/547/548/549/550 BC546, BC549, BC556 BC546 BC547/550 BC548/549 BC546 BC547/550 BC548/549/550 transistor c 548 transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
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