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transistors

Abstract:
Text: Emitter Base Emitter- Basis- hie 1 + h fe hic = hie Eingangsimpedanz hie × h oe - hre , voltage transfer ratio h12 hre Small signal current gain h21 hfe h fb = - Output , : B ­ Silicon Transistor C ­ LF Low Power Transistor nnn ­ Serial Number X or -nn ­ hFE Group B ­ Siliziumtransistor C ­ NF Kleinleistungstransistor nnn ­ Serien-Nummer X oder -nn ­ hFE Gruppe , / C BC860 A / B / C BC327 -16 / -25 / -40 BC328 -16 / -25 / -40 BC337 -16 / -25 / -40 BC338 -16


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PDF BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC856 transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor bc337 hie BC547 equivalent bc327 equivalent bc338 equivalent BC547 sot23
2004 - BC337

Abstract:
Text: BC337-40-BULK or BC337-40-TAP Bulk / Ammopack BC338 -16 hFE , 130 @ 300 mA BC338 -16-BULK or BC338 -16-TAP Bulk / Ammopack BC338 -25 hFE , 200 @ 300 mA BC338 -25-BULK or BC338 -25-TAP Bulk / Ammopack BC338 -40 hFE , 320 @ 300 mA BC338 -40-BULK or BC338 -40-TAP Bulk / Ammopack , 1 V, IC = 300 mA BC338 -16 hFE 60 130 DC current gain (current gain group - 25) VCE = 1 V, IC = 300 mA BC338 -25 hFE 100 200 DC current gain (current gain group - 40


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PDF BC337 BC338 BC327 BC328 BC337-16 D-74025 02-Nov-04 CBC337 BC337 figure BC337 hfe BC338 cbc338 BC337 typical application BC337 leads BC337-40 BC337-16
2004 - BC337 NATIONAL SEMICONDUCTOR

Abstract:
Text: VCE = 1 V, IC = 300 mA BC337 BC338 Symbol hFE hFE hFE hFE hFE hFE ICES ICES ICES ICES V(BR)CEO V(BR , VISHAY BC337 / BC338 Vishay Semiconductors Small Signal Transistors (NPN) Features · NPN , k per Ammopack 20 k/box Parts Table Part BC337-16 BC337-25 BC337-40 BC338 -16 BC338 -25 BC338 -40 Type differentiation hFE , 160 @ 100 mA hFE , 250 @ 100 mA hFE , 400 @ 100 mA hFE , 130 @ 300 mA hFE , 200 @ 300 mA hFE , 320 @ 300 mA Ordering code BC337-16-BULK or BC337-16-TAP BC337-25-BULK or BC337


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PDF BC337 BC338 BC327 BC328 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 BC337 NATIONAL SEMICONDUCTOR BC338-25 NATIONAL SEMICONDUCTOR BC338-16 NATIONAL SEMICONDUCTOR BC337 vishay bc3374 BC33840
1997 - bc3378

Abstract:
Text: BC337-40; BC338 -40 250 - 600 40 - - BC337; BC338 hFE DC current gain , pagewidth hFE 160 VCE = 5 V 120 80 40 0 10-1 1 10 BC337-16; BC338 -16. Fig.2 DC , , full pagewidth hFE 400 VCE = 5 V 300 200 100 0 10-1 1 10 BC337-40; BC338 , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337; BC337A; BC338 NPN , transistors BC337; BC337A; BC338 FEATURES PINNING · High current (max. 500 mA) PIN · Low


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PDF M3D186 BC337; BC337A; BC338 BC327, SCA53 117047/00/02/pp8 bc3378 TRANSISTOR BC337-25 PNP BC337A bc337-40 npn transistor BC338 philips BC337 sot54 BC337 Philips BC337 mar 722 bc337 texas
bc337

Abstract:
Text: =25°C u n le s s o th e rw is e s p e c ifie d ) BC337 Collector-base breakdown voltage BC338 BC337 Collector-emltter breakdown voltage BC338 Emitter-base breakdown voltage BC337 Collector cut-off current BC338 BC337 Collector cut-off current BC338 Emitter cut-off current BC337/ BC338 BC337-16/ BC338 -16 hFE (1) V ce = 1 V, lc , 00 160 250 630 250 400 630 u A DC current gain BC337-25/ BC338 -25 BC337-40/ BC338 -40 hFE (2) V , MCC TO-92 Plastic-Encapsulate Transistors ^ BC337( BC338 ),-16,-25,-40 TRANSISTOR(NPN) FEATURES


OCR Scan
PDF BC337 BC338) BC338 BC338 TRANSISTOR TRANSISTOR bc337 40 TRANSISTOR BC338 BC33840 TRANSISTOR BC337-40
2008 - BC337 B 011

Abstract:
Text: !"# BC337-16/25/40 BC338 -16/25/40 NPN Plastic-Encapsulate Transistors TO-92 A E Features x x , =50V(BC337) , VCBO=30V( BC338 ) Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability , Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 , =0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter Cutoff Current (VEB , =10mA) Classification hFE (1) Marking Code 16 100~250 A 011 Min Max -45 25 -Vdc Units Vdc OFF CHARACTERISTICS V(BR


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC337 B 011
2003 - BC337

Abstract:
Text: !"# BC337-16/25/40 BC338 -16/25/40 NPN Plastic-Encapsulate Transistors TO-92 A E Features · · , :VCBO=50V(BC337) , VCBO=30V( BC338 ) Case Material: Molded Plastic. Classification Rating 94V-0 UL , Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 , =0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter Cutoff Current (VEB , =10mA) Classification hFE (1) Marking Code 16 100~250 A 011 Min Max -45 25 -50 30 5.0 -Vdc Units Vdc OFF


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC337 B 011
2008 - BC337 B 011

Abstract:
Text: MCC TM Micro Commercial Components BC337-16/25/40 BC338 -16/25/40   , Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V( BC338 ) Lead Free Finish/RoHS Compliant ("P" Suffix designates , )CBO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) 45 25 C V(BR)EBO ICBO ICEO IEBO BC337 BC338 , =25Vdc,IE=0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) BC337 B 011
2008 - Not Available

Abstract:
Text: !"# BC337-16/25/40 BC338 -16/25/40 NPN Plastic-Encapsulate Transistors TO-92 A E Features x x , =50V(BC337) , VCBO=30V( BC338 ) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and , Symbol Parameter Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 Collector-Emitter Breakdown Voltage (IE=10µAdc, IC=0) Collector Cutoff Current BC337 (VCB=45Vdc,IE=0) (VCB=25Vdc,IE=0) BC338 Collector Cutoff Current (VCE


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338
2008 - BC337 B 011

Abstract:
Text: MCC TM Micro Commercial Components Features · · · BC337-16/25/40 BC338 -16/25/40 , Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V( BC338 ) Lead Free , Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 Collector-Emitter Breakdown Voltage (IE=10µAdc, IC=0) Collector Cutoff Current BC337 (VCB=45Vdc,IE=0) (VCB=25Vdc,IE=0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) BC337 B 011
2008 - bc337 b 011

Abstract:
Text: !"# BC337-16/25/40 BC338 -16/25/40 NPN Plastic-Encapsulate Transistors TO-92 A E Features x x , =50V(BC337) , VCBO=30V( BC338 ) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See , Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 , =0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter Cutoff Current (VEB , =10mA) Classification hFE (1) Marking Code 16 100~250 A 011 Min Max -45 25 -Vdc Units Vdc · · x x Maximum


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 bc337 b 011
2008 - BC337 B 011

Abstract:
Text: !"# BC337-16/25/40 BC338 -16/25/40 NPN Plastic-Encapsulate Transistors TO-92 A E Features x x , =50V(BC337) , VCBO=30V( BC338 ) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See , Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 , =0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter Cutoff Current (VEB , CHARACTERISTICS hFE (1) VCE(sat) VBE(sat) 60 -0.7 1.2 -Vdc Vdc INCHES MIN .175 .175 .500 .016 .135 .095 .173


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC337 B 011
1996 - BC337

Abstract:
Text: Transistors NPN Silicon BC337,-16,-25,-40 BC338 ,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Collector ­ Emitter Voltage VCEO 45 , BC337 BC338 Vdc V(BR)CES BC337 BC338 Emitter ­ Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 Vdc ICBO


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PDF BC337/D BC337 BC338 BC337 BC338 BC337/D* BC337 MOTOROLA Motorola BC337
1996 - BC337 figure

Abstract:
Text: NPN Silicon BC337,-16,-25,-40 BC338 ,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Collector ­ Emitter Voltage VCEO 45 25 , BC338 Vdc V(BR)CES BC337 BC338 Emitter ­ Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 Vdc ICBO


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PDF BC337/D BC337 BC338 BC337 BC338 BC337/D* BC337 figure BC337 NPN transistor datasheet
BC337 B 011

Abstract:
Text: MCC TM Micro Commercial Components BC337-16/25/40 BC338 -16/25/40   , =30V( BC338 ) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information , Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) 45 25 C V(BR)EBO ICBO ICEO IEBO BC337 BC338 Collector-Emitter Breakdown Voltage (IE=10µAdc, IC=0) Collector Cutoff Current (VCB=45Vdc,IE=0) BC337 (VCB=25Vdc,IE=0) BC338


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) BC337 B 011
2008 - BC337 B 011

Abstract:
Text: MCC TM Micro Commercial Components BC337-16/25/40 BC338 -16/25/40   , Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V( BC338 ) Lead Free Finish/RoHS Compliant ("P" Suffix designates , )CBO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) 45 25 C V(BR)EBO ICBO ICEO IEBO BC337 BC338 , =25Vdc,IE=0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) BC337 B 011 BC337 A 011
2008 - bc337 b 011

Abstract:
Text: . Collector-current 0.8A Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V( BC338 ) Case Material: Molded Plastic. Classification Rating 94V-0 BC337-16/25/40 BC338 -16/25/40 omponents 20736 Marilla Street Chatsworth , Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 Collector-Emitter Breakdown Voltage (IE=10µAdc, IC=0) Collector Cutoff Current BC337 (VCB=45Vdc,IE=0) (VCB=25Vdc,IE=0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337


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PDF 625Watts BC337) BC338) BC337-16/25/40 BC338-16/25/40 bc337 b 011 BC337
2004 - bc337 pin out diagram

Abstract:
Text: ) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/ BC338 , BC337, BC337-16, BC337-25, BC337-40, BC338 -25 Amplifier Transistors NPN Silicon http://onsemi.com , 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C 3 EMITTER · Pb-Free Package is , BC337, BC337-16, BC337-25, BC337-40, BC338 -25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , ) BC338 Collector -Emitter Breakdown Voltage (IC = 100 mA, IE = 0) BC338 Emitter -Base Breakdown Voltage


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PDF BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 BC337/D bc337 pin out diagram BC337 figure bc337-25 BC33740 BC337 pin out BC337-16 bc337-40 BC337 typical application
2004 - bc337 pin out diagram

Abstract:
Text: Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/ BC338 -25 BC337-40 100 100 160 250 60 , BC337, BC337-16, BC337-25, BC337-40, BC338 -25 Amplifier Transistors NPN Silicon http://onsemi.com , PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW , , BC337-16, BC337-25, BC337-40, BC338 -25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mA, IB = 0) BC338 Collector


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PDF BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 BC337/D bc337 pin out diagram BC337 figure BC33740 BC337-40 BC337-16 BC-337-16 BC337-25 bc33716
2008 - BC337 B 011

Abstract:
Text: !"# BC337-16/25/40 BC338 -16/25/40 NPN Plastic-Encapsulate Transistors TO-92 A E Features · x , of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V( BC338 , =0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 Collector-Emitter Breakdown Voltage (IE=10µAdc, IC=0) Collector Cutoff Current BC337 (VCB=45Vdc,IE=0) (VCB=25Vdc,IE=0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter Cutoff Current (VEB=4.0Vdc, IC=0) DC


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PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC337 B 011 MARKING code 25
2001 - BC337 figure

Abstract:
Text: Current Gain (IC = 100 mA, VCE = 1.0 V) hFE ­ BC337 BC337­16 BC337­25/ BC338 ­25 BC337 , ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338 -25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector­Emitter Voltage , ) V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 Emitter­Base Breakdown Voltage (IE = 10 mA, IC = , BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338


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PDF BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 r14525 BC337/D BC337 figure bc337 BC338-25 BC337-40 BC337-25 BC33740 BC33825 BC337-16 BC338 BC337 hfe
1997 - Not Available

Abstract:
Text: Gain (IC = 100 mA, VCE = 1.0 V) hFE — BC337/ BC338 BC337–16/BC338–16 BC337–25/BC338â , NPN Silicon BC337,-16,-25,-40 BC338 ,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Collector – Emitter Voltage VCEO 45 25 , = 100 µA, IE = 0) V(BR)CEO BC337 BC338 Vdc V(BR)CES BC337 BC338 Emitter – Base , = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE


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PDF BC337/D BC337 BC338 BC337 BC338 BC337/D*
2001 - BC337

Abstract:
Text: Gain (IC = 100 mA, VCE = 1.0 V) hFE - BC337/ BC338 BC337­16/ BC338 ­16 BC337­25/ BC338 , ON Semiconductort Amplifier Transistors BC337,-16,-25,-40 BC338 ,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector­Emitter Voltage VCEO 45 , ) V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 Emitter­Base Breakdown Voltage (IE = 10 mA, IC = , BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338


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PDF BC337 BC338 BC337 BC338 r14525 BC337/D BC337 figure
1999 - bc337 transistor datasheet

Abstract:
Text: MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Collector-Emitter Voltage : BC337 : BC338 Collector-Emitter Voltage : BC337 : BC338 Emitter-Base Voltage Collector Current (DC) Collector Dissipation , Voltage : BC337 : BC338 Collector Emitter Breakdown Voltage : BC337 : BC338 Emitter Base Breakdown Voltage Collector Cut-off Current : BC337 : BC338 DC Current Gain Collector-Emitter Saturation , 12 pF 100 60 hFE CLASSIFICATION Classification 16 25 40 hFE 100-250


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PDF BC337/338 BC337/BC328 BC337 BC338 BC338 bc337 transistor datasheet transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337
2005 - BC337

Abstract:
Text: CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE - BC337 BC337-16 BC337-25/ BC338 , BC337, BC337-16, BC337-25, BC337-40, BC338 -25 Amplifier Transistors NPN Silicon http , BC337 BC338 Unit Collector - Emitter Voltage VCEO 45 25 Vdc Collector - Base , , BC337-16, BC337-25, BC337-40, BC338 -25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Voltage (IC = 10 mA, IB = 0) BC338 V(BR)CEO BC337 Collector -Emitter Breakdown Voltage (IC = 100


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PDF BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 BC337/D bc337 pin out diagram BC33 7-25 BC337 figure BC33x BC338-25 bc33725g BC337ZL1G BC337RL1 BC337G
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