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ON Semiconductor
BC307B Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk - Bulk (Alt: BC307B)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet BC307B Bulk 0 1 Weeks 8,334 - - - - $0.03922 More Info
Onlinecomponents.com BC307B 11,620 - - - $0.19 $0.16 More Info
Rochester Electronics BC307B 19,100 1 $0.05 $0.05 $0.04 $0.04 $0.04 More Info
ON Semiconductor
BC307BBU - Bulk (Alt: BC307BBU)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet BC307BBU Bulk 0 1 Weeks 12,500 - - - - - More Info
ON Semiconductor
BC307CBU - Bulk (Alt: BC307CBU)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet BC307CBU Bulk 0 1 Weeks 12,500 - - - - - More Info
ON Semiconductor
BC307BTA - Bulk (Alt: BC307BTA)
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Avnet BC307BTA Bulk 0 1 Weeks 12,500 - - - - - More Info
ON Semiconductor
BC307BRL1G Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R - Bulk (Alt: BC307BRL1G)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet BC307BRL1G Bulk 0 1 Weeks 3,572 - - - - $0.0899 More Info
Newark element14 BC307BRL1G Reel 0 1 - - - - - More Info
Rochester Electronics BC307BRL1G 41,191 1 $0.11 $0.11 $0.1 $0.09 $0.09 More Info
ComS.I.T. BC307BRL1G 2,000 - - - - - More Info
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ON Semiconductor
BC307 TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),TO-92 ROHS COMPLIANT: YES
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BC307 Bulk 0 1 - - - - - More Info
Eaton Bussmann
BC3-07 BC3-07-MFGR / BULK
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BC3-07 Bulk 0 1 $2.08 $2.08 $1.68 $1.29 $1.29 More Info
Sager BC3-07 0 500 - - - $0.9867 $0.925 More Info
Fairchild Semiconductor Corporation
BC307 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307 8,177 1 $0.05 $0.05 $0.04 $0.04 $0.04 More Info
Fairchild Semiconductor Corporation
BC307B Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307B 11,677 1 $0.05 $0.05 $0.04 $0.04 $0.04 More Info
Fairchild Semiconductor Corporation
BC307BBU Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307BBU 10,000 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
Fairchild Semiconductor Corporation
BC307BTA Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307BTA 24,000 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
Fairchild Semiconductor Corporation
BC307CBU Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307CBU 629 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
ON Semiconductor
BC307BG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307BG 8,200 1 $0.05 $0.05 $0.04 $0.04 $0.04 More Info
ON Semiconductor
BC307BZL1G Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307BZL1G 14,000 1 $0.05 $0.05 $0.04 $0.04 $0.04 More Info
ON Semiconductor
BC307C TRANS PNP 45V 0.1A TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307C 34,200 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
ON Semiconductor
BC307CZL1 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC307CZL1 28,000 1 $0.02 $0.02 $0.01 $0.01 $0.01 More Info
ON Semiconductor
BC307CG
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics BC307CG 10,000 - - - - - More Info

BC307 datasheet (196)

Part Manufacturer Description Type PDF
BC307 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC307 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BC307 Fairchild Semiconductor Switching and Amplifier Applications Original PDF
BC307 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC307 Korea Electronics General Purpose Transistor Original PDF
BC307 Motorola Amplifier Transistors(PNP) Original PDF
BC307 On Semiconductor Amplifier Transistor PNP Original PDF
BC307 Philips Semiconductors Small-signal Transistors Original PDF
BC307 Philips Semiconductors PNP general purpose transistors Original PDF
BC307 Bharat Electronics Shortform Transistor Data Scan PDF
BC307 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BC307 Continental Device India PNP Plastic Transistors Scan PDF
BC307 Crimson Semiconductor Transistor Selection Guide Scan PDF
BC307 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
BC307 ITT Semiconductors Transistors 1980 Scan PDF
BC307 Korea Electronics General Purpose Transistor Scan PDF
BC307 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
BC307 Korea Electronics TRANS GP BJT PNP 45V 0.1A 3TO-92 Scan PDF
BC307 Micro Electronics PNP SILICON PLANAR EPITAXIAL TRANSISTORS Scan PDF
BC307 Micro Electronics Semiconductor Device Data Book Scan PDF

BC307 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BC307

Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
Text: SEMICONDUCTOR TECHNICAL DATA BC307 /8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 Vceo=-45V. • Low Noise , BC307 VcBO -50 V BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 VcEO -45 V BC308 -25 BC309 -20 Emitter-Base Voltage BC307 Vebo -5 V BC308 -5 BC309 -5 Collector Current BC307 Ic -100 mA BC308 -100 BC309 -50 Emitter Current BC307 Ie 100 mA BC308 100 BC309 50


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PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
bc307

Abstract: BC308
Text: BC307 /308/309(PNP) TO-92 Bipolar Transistors 1. COLLECTOR 2. BASE 3. EMITTER TO , VEBO IC PC RJA RJC Tj Tstg Parameter BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector , =-2mA VCE=-5V, IC=-10mA, f=50MHz VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-0.2mA , f=1KHz, RG=2K BC307 /BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2K BC309 -0.55 130 6 10 4 4 120 BC307 BC308/309 conditions BC307 BC308/309 BC307 BC308/309 MIN -50 -30 -45 -25 -5 -15 -15 800 -0.3 -0.6 -0.75 -1 -0.75 V V V V V MHz pF


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PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308
bc308

Abstract: BC307 BC309
Text: www.haorm.cn BC307 /308/309 TRANSISTOR (PNP) TO-92 FEATURES Amplifier dissipation NPN Silicon 1 , BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous -45 -25 -6 , V BC307 BC308/309 -15 120 nA -15 nA 800 IC=-10mA, IB=-0.5mA -0.3 V , =0 DC current gain BC307 BC308/309 BC307 BC308/309 6 VCE=-5V, IC=-0.2mA , f=1KHz, RG=2K BC307 /BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2K BC309 pF 10 4 dB 4 hFE A


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PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc308 BC307 BC309
2012 - bc307

Abstract: BC308 BC307 complementary
Text: BC307 /8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ·Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max , Voltage : BC307 VCEO=-45V. MAXIMUM RATING (Ta=25) F H F CHARACTERISTIC BC307 Collector-Base Voltage BC308 BC309 BC307 Collector-Emitter Voltage BC308 BC309 BC307 Emitter-Base Voltage BC308 BC309 BC307 Collector Current BC308 BC309 BC307 Emitter Current BC308 BC309 Collector Power Dissipation , mA PC Tj Tstg 625 150 -55150 mW 1994. 3. 2 Revision No : 0 1/2 BC307 /8/9


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PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary
308B

Abstract: BC308 Motorola bc309 bc 307A bc307a BC309 Motorola bc307
Text: s |iA hFE B C 307A/308A/309A BC307B /308B/309B BC307C /308C/309C BC307 BC308 BC309 BC307A /308A/309A BC307B /308B/309B BC307C /308C/309C BC 307A/308A/309A BC307B /308B/309B BC307C /308C/309C VCE(sat , MOTOROLA SC XSTRS/R F 12E 0 I t3b7E5i( 0043838 S | BC307 , A, B, C M A X IM U M RATINGS R , ) (Ta " 2 5 °C unless otherwise noted) Type BC307 BC308 BC309 BC307 BC308 BC309 BC307 BC308 BC309 BC307 , X S TRS /R F 12E D | L3b72S4 DOflSflBT 7 | ^ BC307 , A, B, C THRU BC309, A, B, C ELECTRICAL


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PDF BC307, BC309, BC309 BC307 BC308 L3b7254 308B BC308 Motorola bc 307A bc307a BC309 Motorola
BC257

Abstract: BC307 BC107 BC307 micro electronics bci77 PQ-32/699AP/AF-10 BC237 BC178 BC258 BC317
Text: ti) o o er o LU LU BC177,8,9 BC257,8,9 BC307 ,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON , . BC177, 8, 9 are complementary to BC107, 8, 9 BC257, 8, 9 are complementary to BC 167, 8, 9 BC307 , 8, 9 , -92F CEB TO-92A S3C BC177,8,9 BC257,8,9 BC307 ,8,9 BC320,1,2 ABSOLUTE MAXIMUM RATINGS TYPE -VCBO (v) -VCES , 25 25 20 5 5 100 100 300 300 -55 to 150°C BC307 50 50 45 5 100 300 BC308 30 30 25 5 100 300 -55 to , -0 -IC=2mA IB-O -IS=lpA Ic-O Collector Cutoff Current BC177, 178, 179 BC257, 258, 259 BC307 , 308, 309 -ICES


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PDF BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC107 BC307 micro electronics bci77 PQ-32/699AP/AF-10 BC237 BC178 BC258 BC317
2002 - BC307

Abstract: BC308 BC308 PNP transistor BC309 309 IC
Text: BC307 /308/309 BC307 /308/309 Switching and Amplifier Applications · Low Noise: BC309 TO , Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Value Units -50 -30 V V -45 , 2002 Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC307 : BC308/309 Test Condition IC= -2mA, IB=0 Collector-Emitter Breakdown Voltage : BC307 : BC308/309 IC= -10µA, VBE


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC308 BC308 PNP transistor BC309 309 IC
TYP 513 309

Abstract: GE-514
Text: BC307 /308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · L O W , : BC307 BC308/309 Collector-Emitter Voltage : BC307 BC308/309 Emitter-Base Voltage Collector Current (DC , ELEC TR IC AL CHARACTERISTICS (TA=25lC) C h aracte ristic Collector Emitter Breakdown Voltage BC307 :BC3Q8/309 Collector Emitter Breakdown Voltage : BC307 BC308/309 Emitter Base Breakdown Voltage Collector Cut-off Current : BC307 :BC238/239 D C Current Gain Collector-Emitter Saturation Voltage Collector B ase


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC3Q8/309 TYP 513 309 GE-514
BC307

Abstract: No abstract text available
Text: BC307 /308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 , Collector-Emitter Voltage : BC307 :BC308/309 Collector-Emitter Voltage : BC307 B C 3 0 8 /3 0 9 Emitter-Base , : BC307 :BC308/309 Collector Emitter Breakdown Voltage : BC307 :BC308/309 Emitter Base Breakdown Voltage Collector Cutoff Current : BC307 :BC308/309 DC Current Gain Collector Emitter Saturation , Figure : BC307 /308 :BC309 :BC309 Cebo Cebo NF fr NF V ce = — 4 5 V , lB=0 V ce = - 25V


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307
2001 - transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: BC307BBU Full Production BC307ABU Full Production BC307CBU Full Production BC307ATA Full Production BC307BTA Full Production BC307B Full Production * 1,000 piece Budgetary Pricing back to top space , BC307 /308/309 BC307 /308/309 Switching and Amplifier Applications · Low Noise: BC309 1 TO , =25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Emitter-Base Voltage Collector Current (DC) Collector Power


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
BC307

Abstract: BC308 BC309 BC308 PNP transistor
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307 /8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 , Collector-Base Voltage BC307 VcBO -50 V BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 VcEO -45 V BC308 -25 BC309 -20 Emitter-Base Voltage BC307 Vebo -5 V BC308 -5 BC309 -5 Collector Current BC307 Ic -100 mA BC308 -100 BC309 -50 Emitter Current BC307 Ie 100 mA BC308 100


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PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor
2002 - BC307

Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
Text: SEMICONDUCTOR BC307 /8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low , With NPN type BC237/238/239. G J D ) SYMBOL UNIT -50 L BC307 RATING , . COLLECTOR 3. EMITTER V TO-92 -5 BC308 VEBO -5 V BC309 -5 BC307 -100 BC308 IC -100 BC309 mA -50 BC307 Emitter Current 3 -20 BC307 Collector


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PDF BC307/8/9 BC307 BC309 BC237/238/239. BC307 BC308 BC309 BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 bc3078 BC237
transistor bc 238 b

Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC307 /308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W , ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307 : BC 308/309 Em , ) C haracteristic Sym bol C ollector Em itter Breakdow n Voltage : BC307 : BC 308/309 C ollector Em itter Breakdow n Voltage : BC307 : BC 308/309 Em itter Base Breakdow n Voltage C ollector C ut-off C urrent : BC307 : BC 238/239 DC C urrent Gain C ollector-E m ltter Saturation Voltage B V


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PDF BC307/308/309 BC309 BC307 transistor bc 238 b
2002 - BC308A

Abstract: Transistor BC 308C BC307 Bc308
Text: BC307 /308/309 BC307 /308/309 Switching and Amplifier Applications · Low Noise: BC309 1 TO , =25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Emitter-Base Voltage Collector Current (DC) Collector Power , . A2, August 2002 BC307 /308/309 Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC307 : BC308/309 Collector-Emitter


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307
238C

Abstract: BC238 BC239 25CC JE125 BC308C BC307 BC237A BC237 BC239C
Text: BC307C /308C BC307 BC308C *FE 120 120 150 270 800 800 BC307B /309B BC307C /308C 200 420 290 500 460 800 BC307B /309B BC307C /308C — 180 300 — Collector-Emitter Saturation Voltage (Ic = -10 mAdc, Ib = -0.5 , and Diodes Device Data 2-65 MAXIMUM RATINGS Rating _ Symbol BC307 BC308C BC309 Unit Collector-Emitter , , Junction to Case "«Je 125 °CA/V BC307 ,B,C BC308C BC309B CASE 29-04, STYLE 17 TO-92 (TO-226AA) PNP SILICON , OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BC307 V(BRiCEO -45 — — Vdc (IC = -2.0 mAdc


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PDF BC237 BC238 BC239 O-226AA) BC307 BC308C BC309B 238C 25CC JE125 BC237A BC239C
2008 - bc307

Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
Text: BC307 /8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max , Voltage : BC307 VCEO=-45V. MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING -50 L H UNIT F F 1 2 3 Collector-Base Voltage BC308 BC309 BC307 VCBO -30 -30 -45 V M C BC307 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 , Collector-Emitter Voltage BC308 BC309 BC307 VCEO -25 -20 -5 V TO-92 Emitter-Base Voltage BC308


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PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
bc177

Abstract: BC257
Text: , 9. BC257, 8, 9 are complementary to BC167, 8, 9. BC307 , 8, 9 are complementary to BC237, 8, 9. BC320 , 45 25 20 , 45 30 20 25^C BC177,8,9 BC257,8,9 BC307 ,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL TO-92A CEB BC307 ,8,9 SBC BC320,1,2 , ptot * (mW) o o Tj, Tstg BC177 BC178 BC179 BC257 BC258 BC259 BC307 BC308 BC309 BC320 BC321 BC322 , onl ^ BC307 , 308, 309 J ^ Babti-Emitter Saturation Voltage All types -VCEK 0 .3 V V -IC=10mA


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PDF BC177, BC107, BC257, BC167, BC307, BC237, BC320, BC317, O-92B O-92F bc177 BC257
bc307b

Abstract: transistor bc307b MAM231 BC307
Text: transistors BC307 ; BC307B BC307B. Fig.2 DC current gain; typical values. CHARACTERISTICS Tam b = 25 , Philips Semiconductors Product specification PNP general purpose transistors BC307 ; BC307B , current gain BC307 BC307B transition frequency open emitter open base CONDITIONS "!~am b -25 °C lc = , the Absolute Maximum Rating System (IEC 134). SYMBOL VC BO VC EO V ebo BC307 ; BC307B PARAMETER , current DC current gain BC307 BC307B Ie Ie CONDITIONS = 0; Vqb = - 30 V; = 0; VCB = -3 0 V ;T j= 150


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PDF BC307; BC307B BC237 BC237B. MAM231 BC307 BC307B transistor bc307b MAM231
fr 309

Abstract: BC307 309 T BC239 BC309
Text:  BC307 /308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW , Voltage VcES : BC307 -50 V : BC308/309 -30 V Collector-Emitter Voltage VcEO : BC307 -45 V , Breakdown Voltage : BC307 : BC308/309 Collector Emitter Breakdown Voltage : BC307 : BC308/309 Emitter Base Breakdown Voltage Collector Cut-off Current : BC307 : BC238/239 DC Current Gain Collector-Emitter Saturation , Respective Manufacturer BC307 /308/309 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308/309 fr 309 BC307 309 T BC239 BC309
2008 - BC308

Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A Transistor BC307b BC308 PNP transistor download datasheet transistor bc308 Bc308B, PNP
Text: 6 12 130 BC307B BC308B BC309B MIN MAX 180 460 BC307C BC308C BC309C MIN MAX 380 , Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307 , BC308, and BC309 types are PNP Silicon Transistors manufactured by , Junction Temperature Thermal Resistance SYMBOL VCES VCEO VEBO IC PD TJ, Tstg JA BC307 50 45 , =45V ( BC307 ) ICES VCE=25V (BC308, BC309) BVCES IC=10A ( BC307 ) 50 BVCES IC=10A (BC308, BC309) 30 BVCEO


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PDF BC307 BC308 BC309 BC307, BC308, BC309 BC307) BC3050MHz BC308 BC308B BC308 PNP transistor BC307A BC307 BC308A Transistor BC307b BC308 PNP transistor download datasheet transistor bc308 Bc308B, PNP
2002 - bc307bta

Abstract: BC307
Text: detailed qualification data Product BC307 BC307ABU BC307ATA BC307B BC307BBU BC307BTA BC307BTF BC307BTFR , BC307ABU Full Production $0.0238 TO-92 3 BULK BC307ATA Full Production $0.0238 TO-92 3 AMMO Line 1: BC307 Line 2: A Line 3: -&3 BC307B Full Production $0.061 , : BC307 Line 2: B Line 3: -&3 BC307BTA Full Production $0.0238 TO-92 3 AMMO Line 1: BC307 Line 2: B Line 3: -&3 BC307BTF Full Production $0.0238 TO-92 3 TAPE REEL Line


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta
BC307

Abstract: BC308
Text: IFIE R APPLICATIO N. FEA TU RES · High Voltage : BC307 VCEO=-45V. · Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (V ce=- 6V, Ic= -0 .1mA, f=lkH z). · For Complementary With NPN type BC237/238/239. BC307 , (T a = 2 5 `C) CHARACTERISTIC BC307 Collector-Base Voltage BC308 BC309 SYMBOL RATING -50 UNIT J , Collector-Em itter Voltage _B C 3^8 J BC309 BC307 ' -25 V TO-92 -20 Emitter-Base Voltage BC308 BC309 BC307 VF m -100 -50 100 100 50 625 150 ` stg Collector C rrent BC308 BC309


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PDF BC307 BC309 BC237/238/239. BC307/8/9 BC308 -10mA, 100MHz
BC307B

Abstract: BC306C BC307C BC307 BC308C
Text: Junction Temperature Range Tj, Tstg -55 to+150 °C BC307 BC307B BC307C BC308C CASE 29-04, STYLE 17 TOâ , – - Motorola Small-Signal Transistors, FETs and Diodes Device Data BC307 BC307B BC307C BC308C ELECTRICAL , CHARACTERISTICS DC Current Gain (Ic = -10 nAdc, Vce = -5.0 Vdc) BC307B BC307C /308C hFE _ 150 270 _ (Ic = -2.0 mAdc, VCE = -5.0 Vdc) BC307 BC307B /308B BC307C /308C 120 200 420 290 500 800 460 800 (IC = -100 , Transistors, FETs and Diodes Device Data 2-89 BC307 BC307B BC307C BC308C TYPICAL CHARACTERISTICS i i


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PDF BC307, BC306C BC307 BC307B BC307C BC308C O-226AA) b3b7255 BC308C
BC307

Abstract: BC308 PNP transistor download datasheet BC308
Text: BC307.BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30 V , : 27/12/2007 BC307.BC308 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International , mA A B C BC307 BC308 BC307 BC308 Min. Max. Unit hFE hFE hFE 120 180 380


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PDF BC307. BC308 BC307 BC307 BC308 PNP transistor download datasheet BC308
1996 - BC307D

Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola
Text: ­5.0 Vdc) hFE BC307B /309B BC307C /308C - (IC = ­2.0 mAdc, VCE = ­5.0 Vdc) BC307 BC308C 120 120 - - 800 800 (IC = ­100 mAdc, VCE = ­5.0 Vdc) BC307B /309B BC307C /308C 200 420 290 500 460 800 BC307B /309B BC307C /308C - - 180 300 - - - - - , MOTOROLA Order this document by BC307 /D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 ,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS


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PDF BC307/D BC307 BC308C BC309B BC307/D* BC307D BC309B 308C BC308C BC309 BC309 Motorola
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