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BC140-10
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BC140-10 Transistor: NPN; bipolar; 40V; 1A; 0.8/4W; TO39
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BC140-10 datasheet (22)

Part Manufacturer Description Type PDF
BC140-10 Central Semiconductor NPN Silicon Transistor Original PDF
BC140-10 Philips Semiconductors NPN medium power transistors Original PDF
BC140-10 Philips Semiconductors Small-signal Transistors Original PDF
BC140-10 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
BC140-10 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BC140-10 Crimson Semiconductor Transistor Selection Guide Scan PDF
BC140-10 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
BC140-10 Infineon Technologies TRANS GP BJT NPN 40V 1A 3TO 39 Scan PDF
BC140-10 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
BC140-10 Micro Electronics Semiconductor Devices Scan PDF
BC140-10 Others Basic Transistor and Cross Reference Specification Scan PDF
BC140-10 Others Basic Transistor and Cross Reference Specification Scan PDF
BC140-10 Others Shortform Transistor PDF Datasheet Scan PDF
BC140-10 Others Shortform Transistor PDF Datasheet Scan PDF
BC140/10 Others Shortform Transistor Datasheet Guide Scan PDF
BC140-10 Others Shortform Electronic Component Datasheets Scan PDF
BC140-10 National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
BC140-10 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
BC140-10 National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
BC140-10 Raytheon Selection Guide 1977 Scan PDF

BC140-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
bc140

Abstract: BC141 BC141-10 BC141-16 BC140-10 BC140-16 BC160 BC161 J 3305 BC140 10
Text: temperature TJ Transition frequency at f = 20 MHz lc = 50 mA;VCE= 10 V 50 MHz BC140-10 BC140-16 BC141- 10 BC141-16 > 63 100 < 160 250 MECHANICAL DATA Dimensions in mm Fig. 1 TO-39. Collector , V 50 MHz 25 pF 80 pF BC140-10 BC140-16 BC141- 10 BC141-16 40 90 63 100 100 160 160 , 50 mA;VCE = 10 V Collector capacitance at f = 1 MHz lE=le = 0;VCB = 10V Emitter capacitance at f = 1


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PDF BC140 BC141 711002b 7--33-OS' BC160 BC161. BC140 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC140-16 BC161 J 3305 BC140 10
1997 - TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC141 philips BC141
Text: W BC140-10 ; BC141- 10 63 100 160 BC140-16; BC141-16 100 160 250 50 - , 100 nA hFE DC current gain IC = 100 µA; VCE = 1 V BC140-10 ; BC141- 10 - 40 - BC140-16; BC141-16 - 90 - BC140-10 ; BC141- 10 63 100 160 BC140-16; BC141-16 100 160 250 BC140-10 ; BC141- 10 - 20 - BC140-16; BC141-16 - 30 - hFE , fT transition frequency 1997 May 12 IC = 50 mA; VCE = 10 V; f = 100 MHz 2 MHz


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PDF M3D110 BC140; BC141 BC160 BC161. MAM317 SCA54 117047/00/02/pp8 TRANSISTOR BC140 TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC141 philips BC141
TRANSISTOR BC140

Abstract: TRANSISTOR BC141 bc140 TRANSISTOR BC141-16 Transistor BC140-10 BC140 bc140-16 BC141 BC140-10 transistor 335
Text: =60v, Ta=150°C 100 pA 'ebo Veb=5.0v 100 nA vce(sat) lc=1 .oa, lB=100mA 1.0 v vbe(on) vce=1.0v, lc=1.0a 1.8 v hFE vce=1.0v, Ic=100|JA ( bc140-10 , bc141- 10 ) 50 100 hFE vce=1.0v, Ic=100|JA (bc140-16, bc141-16) 100 205 hFE VCE=1.0V, lc=100mA ( BC140-10 , BC141- 10 ) 63 110 160 hFE VCE=1.0V, lc=10QmA (bc140-16, BC141-16) 100 195 250 hFE vce=1.0v, lc=1.0a ( bc140-10 , bc141- 10 ) 10 30 hFE vce=1.0v, lc=1.0a (bc140 , Collector-Emitter Voltage vCEO 40 60 V Emitter-Base Voltage vEBO 7.0 V Collector Current "c 1.0 A Collector


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PDF bc140 bc141 to-39 bc140-16, BC141-16) bc140-10, TRANSISTOR BC140 TRANSISTOR BC141 bc140 TRANSISTOR BC141-16 Transistor BC140-10 bc140-16 BC140-10 transistor 335
TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 BC140-16 TRANSISTOR BC141 bc141 BC140 TRANSISTOR BC140 npn BC141-16 transistor bc140 DC BC141-10
Text: current gain BC140-10 ; BC141- 10 BC140-I6; BC141-16 transition frequency open base CONDITIONS open , current gain BC140-10 ; BC141- 10 BC140-16; BC141-16 DC current gain BC140-10 ; BC141- 10 BC140-16; BC141-16 DC current gain BC140-10 ; BC141- 10 BC140-16; BC141-16 collector-emitter saturation voltage , 10 V; f = 100 MHz 50 fr 1997 May 12 227 Philips Semiconductors Product specification , = 60 V ·e MIN. - TYP. 10 10 - MAX. 100 100 100 UNIT nA m A = 0; VCB = 60 V; Tj


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PDF BC140; BC141 BC160 BC161. BC140 BC141 BC140-10; BC141-10 TRANSISTOR BC140 TRANSISTOR pnp BC140 BC140-16 TRANSISTOR BC141 TRANSISTOR BC140 npn BC141-16 transistor bc140 DC
1994 - BC140

Abstract: BC140-BC141 BC140 equivalent BC140B BC140BC141 BC141 IC BC140 GR16 pnp BC140 BC160
Text: Saturation Voltage I C = 100 mA I C = 500 mA IC = 1 A I B = 10 mA I B = 50 mA I B = 0.1 A 0.1 , off Transition Frequency I C = 50 mA V CE = 10 V Collector-base Capacitance IE = 0 f , 250 26 15 20 30 V CB = 10 V Turn-off Time * Pused : pulse duration = 300 µs, duty cycle , 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr. 10 BC140-141 Gr. 16 V CE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr. 10 BC140-141 Gr.16 V CE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr. 10


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PDF BC140 BC141 BC140 BC141 BC160 BC161. BC140-BC141 BC140 equivalent BC140B BC140BC141 IC BC140 GR16 pnp BC140
bc141-16

Abstract: BC140-16 BC140 bc14016
Text: 10 V v CE0 'c ^tot Ti max. max. max. max. > 40 1 3,7 175 50 BC140-10 B C 1 4 1 10 D.C. current gain , 100 3,7 mA W °C -65 to + 150 max. 175 Ti °c 200 35 K/W K/W = < typ. 10 100 10 100 1,2 1,8 0,6 1,0 50 25 80 BC140- 10 BC140-16 BC141- 10 BC141-16 40 90 63 100 160 20 100 160 , q E = 10 V Collector capacitance at f = 1 M Hz ·e = le = 0 ; V C B = 10 V Em itter capacitance at f , time Source impedance tp = 10 tr tf Rise time Input impedance tr Zj < 15 ns < 15 ns < 1


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PDF BC140 BC141 BC160 BC161. BC140-10 BC141 BC140-16 bc141-16 bc14016
Not Available

Abstract: No abstract text available
Text: frequency at f = 20 MHz lc = 50 m A ;V CE = 10 V M Hz 50 BC140-10 BC141- 10 D.C. current gain lc , 150 °C D.C. current gain lc = 100/xA;VCE = 1 V BC140-10 BC140-16 BC141- 10 BC141-16 40 90 , specified Collector cut-off current V g E = 0; V q E = 60 V 'C E S typ. < 10 100 nA nA •CES typ. < 10 100 juA juA Base-emitter voltage IC = 1 A ; V C E = 1 V V be typ , V V Transition frequency at f = 20 MHz lc = 5 0 m A ; V CE = 10 V fT > 50 MHz


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PDF BC140 BC141 BC160 BC161. BC140-10 BC141-10
BC140

Abstract: bc141 BC140 equivalent BC140-BC141 BC141 equivalent bc141-16 DSA008994 transistor bc140 pnp BC140 1225pF
Text: NPN BC140/ 10 ­ BC140/16 NPN BC141/ 10 ­ BC141/16 GENERAL PURPOSE TRANSISTORS They are silicon , noted COMSET SEMICONDUCTORS 1/3 NPN BC140/ 10 ­ BC140/16 NPN BC141/ 10 ­ BC141/16 Symbol , = 100 µA IC= 0 Voltage Collector-Emitter saturation Voltage DC Current Gain Gr 10 Gr 16 IC= 100 mA , VCE= 1 V Gr 10 Gr 16 IC= 1 A , VCE= 1 V fT - - 100 nA - - 100 , = 50 mA , VCE= 10 V IE= 0 ;VCB= 10V f = 1 MHZ IC=100 mA IB1=-IB2=5 mA IC=100 mA IB1=1 mA Typ


Original
PDF BC140/10 BC140/16 BC141/10 BC141/16 BC160 BC161. BC140 BC141 BC140 bc141 BC140 equivalent BC140-BC141 BC141 equivalent bc141-16 DSA008994 transistor bc140 pnp BC140 1225pF
BC140

Abstract: 100kS BC141
Text: Group 10 Group 16 Group 25 Hfe * 40 63 100 160 100 160 250 400 40 63 100 160 100 160 250 400 lC , Product fT 50 150 50 150 MHz IC=50mA Vce=10V Collector-Base Capacitance Cob 10 25 10 25 pP VCB , 100 Ic (mA) 1000 Hfe (formalized) vs Ic ISJ g p m 250 200 I50 (MHz) 100 50 0 1 10 100 , -10Y / w \ -U. / \ i * / \ t 10


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PDF BC140 BC141 BC140, BC141 BCl60, BC14I 650raW 100kS
BU140

Abstract: bc140 BC140-10 BC141 BC141-16 BC-141 BC141-10 BC140-16 BC160 BC161
Text: lc = 50 mA; VCg = 10 V *T > 50 MHz BC140-10 BC140-16 BC141- 10 BC141-16 D.C. current gain , 150 OC Junction temperature Ti max. 175 °C 200 35 10 100 10 100 1,2 1,8 0,6 1,0 50 25 80 K/W K/W nA nA (iA /*A V V V V MHz pF pF BC140-10 BC140-16 D.C. current gain BC141- 10 , VCEsat Transition frequency at f = 20 MHz lc = 50 mA; VCE= 10 V fT Collector capacitance at f = 1 MHz , Fall time Source impedance H1 v -o — tp = 10 MS tr < 15 ns tf < 15 ns Zs = 50SÎ Fig. 2 Test


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PDF Q27SD7 BU140 BC141 BC160 BC161. BC140 BC140-10 BC140-16 BC141-10 BC141 BC141-16 BC-141 BC140-16 BC161
2004 - bc140

Abstract: BC141 BC140-6 BC140-10 BC140-16 BC141 equivalent BC140 equivalent BC141-10 BC141-16 BC141-6
Text: Package Part Number BC140-6 BC140-10 TO-39 BC140-16 BC141-6 BC141- 10 BC141-16 Page 4 , IC 1.0 Power Dissipation at Ta = 25ºC Derate Above 25ºC PD 0.8 4.57 Power , Group-6 Group- 10 Group-16 40 40 63 100 DC Current Gain *hFE 400 100 160 250 - IC = 1A, VCE = 1V BC140/BC141 Group-6 Group- 10 Group-16 26 15 20 30 Collector Emitter Saturation Voltage *VCE(sat) IC = 1A, IB = 0.1A - - 1.0 *VBE(on) IC = 1A, VCE = 1V -


Original
PDF BC140, BC140 BC141 bc140 BC141 BC140-6 BC140-10 BC140-16 BC141 equivalent BC140 equivalent BC141-10 BC141-16 BC141-6
BC141 equivalent

Abstract: bc140 BC141 BC140-BC141 BC161 BC160 NPN Transistor 1A metal switching transistor Ic 1A datasheet NPN
Text: UNITS V V V A 7.0 1.0 0.8 4.57 4.0 22.73 PD PD W mW/ ºC W mW/ ºC Tj, Tstg - , =150ºC IC=100mA, VCE=1V *hFE DC Current Gain BC140 / BC141 Group-6 Group- 10 Group-16 IC=1A, VCE=1V BC140 / BC141 Group-6 Group- 10 Group-16 MIN TYP MAX UNITS 80 100 V V 40 60 7 , time ton toff IC=150mA, IB1=7.5mA IC=150mA, IB1=IB2=7.5mA MIN TYP MAX 1.0 2.0


Original
PDF BC140, BC141 BC160 BC161 BC140 C-120 281102E BC141 equivalent bc140 BC141 BC140-BC141 BC161 NPN Transistor 1A metal switching transistor Ic 1A datasheet NPN
2N3742

Abstract: bc140 Bc300 2N5682 2N5681 2N5321 2N5320 2N4926 2N4237 2N3678
Text: 100 1 1 1000 25 50 50 850 BC140-10 80 40 7 0.8 1 0.1 60 63 160 100 1 1 1000 25 50 50 850 , 60 25 500 10 0.4 .6 1.2 150 250 20 150 1 1 2 500 40 120 150 10 35 10 10 25 1 10 20 0.1 10 2N3742 300 300 7 1 0.05 0.2 200 10 3 10 0.75 1 10 6 30 10 15 10 10 1 1.2 30 20 200 30 10 20 50 20 2N4237 50 40 6 1 1 0.01 50 15 1000 1 0.6 1.5 1000


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PDF 2N3678 2N3742 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC141-6 BC300 BC300-4 bc140 2N5682 2N5681 2N5321 2N5320 2N4926 2N4237
T053

Abstract: BC140-16 BC108A BC107A BC109C NPN bc108 IC hr 2N6609 2N6654 2N6590 2N6672
Text: 1 40-400 1/0.1 50H 3.7 BC140-10 REQ NPN T039 40 1 63-160 1/0.1 50M 3.7 BC140-16 REQ NPN T039 40 1 , HR HR T061 400 10 7-35 3/7 25M 125 2N6590 HR HR T061 450 10 7-35 3/7 25M 125 2N6594 REQ PNP T03 40 , 15M 175 2N6654 HR NPN T03 350 20 10min 15/ 10 75M 150 2N6655 HR NPN T03 400 20 10min 15/ 10 75M 150 , 400 8 10-40 3/5 15H 150 2N6674 HR NPN T03 300 15 8-200 2/ 10 15M 175 2N6675 HR NPN T03 400 15 8-200 2/ 10 15M 175 2N6676 HR NPN T03 300 15 8min 3/15 15M 175 2N6677 HR NPN T03 350 15 8min 3/15 15M 175


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PDF ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 T053 BC140-16 BC108A BC107A BC109C NPN bc108 IC hr 2N6672
Not Available

Abstract: No abstract text available
Text: temperature Ti Transition frequency at f = 20 MHz Iq = 50 mA; V q E = 10 V > MHz 50 BC140-10 BC141- 10 D.C. current gain lc = 1 0 0 m A ;V C E = 1 V hFE > < BC140-16 BC141-16 63 , BC140-10 BC140-16 BC141- 10 BC141-16 40 90 N AMER PHILIPS/DISCRETE bHE D bbS3H31 DOSTSOH TH4 , b e = 0; V q E = 60 V >CES typ. < 10 100 nA nA >CES typ. < 10 100 tiA , frequency at f = 20 MHz iC = 50 m A ; V C E = 10 V Collector capacitance at f = 1 MHz l E = l e = 0 ;V CB


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PDF bb53T31 BC140 BC141 BC160 BC161. BC140-10 BC141-10 BC140-16
2N4033

Abstract: bc140 TO92 BC141 equivalent BC638-10 BC64010 bc368 equivalent BC369 NPN "Small-signal Transistors Selection" transistor 2N4033 BSV17-10
Text: 228 BC160- 10 TO-39 40 1000 3700 63 160 50 BC140-10 228 BC160-16 TO , 63 250 50 BC141 228 BC161- 10 TO-39 60 1000 3700 63 160 50 BC141- 10 228 BC161-16 TO-39 60 1000 3700 100 250 50 BC141-16 228 , 286 BC636- 10 TO-92 45 1000 830 63 160 100 BC635- 10 286 BC636-16 TO , 40 250 100 BC637 286 BC638- 10 TO-92 60 1000 830 63 160 100


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PDF 2N4031 2N4033 BC160 BC140 BC160-10 BC140-10 BC160-16 BC140-16 BC161 BC141 2N4033 bc140 TO92 BC141 equivalent BC638-10 BC64010 bc368 equivalent BC369 NPN "Small-signal Transistors Selection" transistor 2N4033 BSV17-10
2N3643

Abstract: 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 2N3641 2N3302 BC126 2N2219
Text: -92 30 BC140-10 BC160- 10 40 63/160 100 1.40 1000 25 50 — 800 5.0 TO-39 3-16 , PN3643 30 100/300 150 0.22 150 8.0 250 — 625 1.0 TO-92 8 2N4125 30 50/150 2.0 0.40 2.0 4.5 200 — 625 — TO-92 9 2N5227 30 50/700 2.0 0.40 2.0 5.0 100 — 625 — TO-92 10 PN4916 30 70/200 10 0.14 10 4.5 400 150 625 1.0 TO-92 11 PN4917 30 150/300 10 0.14 10 4.5 200 150 625 1.0 TO-92 12 MPS3703 30 30/150 50 0.25 50 12 100 — 625 1.0 TO-92 13 BC126 30 30/120 150 0.50 150 — — — 300


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PDF 2N3641 T0-105 2N3300 2N3302 2N2219 2N2222 2N3643 O-105 PN3643 2N1132 2N3643 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 2N3641 2N3302 BC126 2N2219
1V160

Abstract: bc140 BC141-10
Text: 100 BC140-10 , -16 BC14110, -16 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 3 Collector !C Pd 0.8 4.6 , Garn (1) (IC = 100 m A , V c E = 1 V) fo r BC140, 141, - 10 fo r BC140, 141, -16 C o lle c to r - E m , CHARACTERISTICS G ain B a n d w id th P ro d u c t (IC = 5 0 m A , VCE = 10 V. f = 2 0 M H z) In p u t C a p a c ita n c e (V f r = 0 ,5 V, Ic = 0, f = 1 M H z C a p a c ita n c e HE = 0 , V c b ^ 10 V, f = 1 M H z


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PDF BC140-10, BC14110, O-205AD) 1V160 bc140 BC141-10
BC140

Abstract: BC140-10 BC141-10 BC140 MOTOROLA 2N3019 BC141
Text: ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ) BC140-10 , -16 BC141- 10 , -16 CASE 79-04 , CHARACTERISTICS DC Current Gain(1) (IC = 100 mA, Vce = 1 V) for BC140, 141, - 10 for BC140, 141, -16 hFE 63 100 1 , = 50 mA, VcE = 10 V, f = 20 MHz) ft 50 MHz Input Capacitance (Veb = 0,5 V, Ic = 0, f = 1 MHz C,b 80 pF Capacitance (IE = 0, Vcb = 10 V. f = 1 MHz) Cob 25 pF Turn On Time (IC = 150 mA, IB1 = 7.5


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PDF BC140-10, BC141-10, BC140, BC140 BC140-10 BC141-10 BC140 MOTOROLA 2N3019 BC141
Not Available

Abstract: No abstract text available
Text: 40 2 150 1000 250 2 2 1 0.6 1 2N656 2N657 2N696 2N697 2N699 BC140 BC140-10 BC140-16 BC140 , ) *c (mA) (ns) Max 250 NF @ Freq (dB) (MHz) Max 2N3678 0.8 60 500 150 150 10 1 0.1 3 10 200 30 50 1000 500 150 250 50 3 10 200 30 50 130 500 1000 250 500 1000 150 250 10 1 10 10 10 10 10 10 10 20 1 1 1 1 10 10 10 20 4 2 4 2 2 2N3742 300 300 7 1 0.05 0.2 200 10 15 20 20 0.75 1 1 1.2 10 30 6 30 10 2N4237 50 40 6 1 1 0.01


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PDF 2N3678
BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent BC160 equivalent bc109 equivalent
Text: TO-18 BC109C 2N3117 NPN TO-18 BC140 2N3019 NPN TO-39 BC140-6 2N3019 NPN TO-39 BC140-10 2N3019 NPN TO-39 BC140-16 2N3019 NPN TO-39 BC141 2N3019 NPN TO-39 BC141-6 2N3019 ■NPN TO-39 BC141- 10 2N3019 NPN TO-39 BC143 2N2904A PNP TO-5 BC160 2N4030 PNP TO-39 BC160-6 2N4030 PNP TO-39 BC160- 10 2N4032 PNP TO-39 BC160-16 2N4032 PNP TO-39 BC161 2N4030 PNP TO-39 BC161-6 2N4030 PNP TO-39 BC161- 10 , NPN TO-18 BCY59- 10 2 N 2484 NPN TO-18 BCY70 2N2604* PNP TO-18 BCY71 2N2604* PNP TO-18 BCY71A


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PDF BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent BC160 equivalent bc109 equivalent
2001 - bc140

Abstract: BC141 equivalent transistor bc140 BC141 BC160 BC161 BC140-BC141
Text: BC140, -6, - 10 , -16 BC141, -6, - 10 , -16 TO-39 Medium power amplifier & switching applications , Current Ta=150 deg C VCE=60V, VBE=0 hFE* IC=100mA,VCE=1V DC Current Gain BC140,BC141 Group-6 Group- 10 Group-16 IC=1A,VCE=1V BC140,BC141 Group-6 Group- 10 Group-16 Collector Emitter Saturation Voltage , Limited Data Sheet BC141 60 100 7.0 1.0 0.8 4.6 3.7 20 -65 to +200 UNITS V V V A W , < 1.0 <2.0 V V Page 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise


Original
PDF BC140, BC141, BC160 BC161 BC140 C-120 bc140 BC141 equivalent transistor bc140 BC141 BC160 BC161 BC140-BC141
BC140 equivalent

Abstract: 2N2484 equivalent transistors bcy59 equivalent BC141 equivalent bc160 equivalent BC107 equivalent transistors 2n930 equivalent BC177 equivalent 2n3019 equivalent BC107 pnp equivalent
Text: 2N3019 NPN TO-39 BC140-6 2N3019 NPN TO-39 BC140-10 2N3019 NPN TO-39 BC140-16 2N3019 NPN TO-39 BC141 , 700 50 40 20 9/22 3.0 0.3 5/2 2 10 _ _ TO -39 2N327B PNP 700 50 40 20 9/22 3.0 0.3 5/2 2 10 - - TO-39 2N328A PNP 700 50 35 20 18/44 3.0 0.5 5/2 2 10 - - TO-39 2N328B PNP 700 50 35 20 18/44 3.0 0.5 5/2 2 10 - - TO-39 2N329A PNP 700 50 30 20 36/88 3.0 0.6 5/2 2 10 - - TO-39 2N329B PNP 700 50 30 20 36/88 3.0 0.6 5/2 2 10 _ _ TO-39 2N760 NPN 500 45 45 8 76/333 1.0 1.0 10 / 1.0 50 8 - - TO-18 2N760A NPN 500


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PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors bcy59 equivalent BC141 equivalent bc160 equivalent BC107 equivalent transistors 2n930 equivalent BC177 equivalent 2n3019 equivalent BC107 pnp equivalent
BC141A

Abstract: BC140 BC141 BC161
Text: Current Collector-Emitter Saturation Voltage Base-Emitter Voltage D.C. Current Gain Gropp 6 Group 10 Group , .41 50 150 50 150 MHz 10 25 10 25 pP 80 80 pP 25O 25o nS 850 850 nS test conditions IC , «100mA VCE-lV -d i ic=100mA VCE-1T ic=50mA Vce^ 10 ^ vcb-lov ie=0 f«lMHz vbb-°»5v Ic-0 f-lMHz IC=100mA IBI


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PDF BC140 BC141 BC140, BC141-ABE BCl60, BC161 650mW BC141A
bc368 equivalent

Abstract: BFY50 equivalent 2N1711 Data Sheet BC140 equivalent BC638 equivalent transistor 2N1711 TO-92 BC635-16 Package TO 39 DATASHEET BFY51
Text: 146 BC140 TO-39 40 1000 3700 63 250 50 ­ BC160 225 BC140-10 TO-39 40 1000 3700 63 160 50 ­ BC160- 10 225 BC140-16 TO-39 40 1000 , 50 ­ BC161 225 BC141- 10 TO-39 60 1000 3700 63 160 50 ­ BC161- 10 , BC636 283 BC635- 10 TO-92 45 1000 830 63 160 100 ­ BC636- 10 283 , -92 60 1000 830 40 250 100 ­ BC638 283 BC637- 10 TO-92 60 1000 830


Original
PDF 2N1613 2N1711 2N1893 2N3019 BC140 BC160 BC140-10 BSX45 BSX45-10 BSX45-16 bc368 equivalent BFY50 equivalent 2N1711 Data Sheet BC140 equivalent BC638 equivalent transistor 2N1711 TO-92 BC635-16 Package TO 39 DATASHEET BFY51
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