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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
BAV99W,115 NXP Semiconductors BAV99 series - High-speed switching diodes SC-70 3-Pin
BAV99W/ZLX NXP Semiconductors BAV99 series - High-speed switching diodes SC-70 3-Pin
BAV99W,135 NXP Semiconductors BAV99 series - High-speed switching diodes SC-70 3-Pin
BAV99,235 NXP Semiconductors BAV99 series - High-speed switching diodes TO-236 3-Pin
BAV99,215 NXP Semiconductors BAV99 series - High-speed switching diodes TO-236 3-Pin
BAV99W/ZLF NXP Semiconductors BAV99 series - High-speed switching diodes SC-70 3-Pin

BAV99-7-05-F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - BAV99-13-01-F

Abstract: ASMCC0110-7 MMBT3904R-01DK-7-F MMBT2222A-7-04-F MMBT3904-7-05-F BAW56-13-01-F MMBT3904R-01DK-7 BAS16-13-01-F 1N4148WT-7-F 1N4148W-7-F
Text: MMBT3904-13 MMBT3904-7 MMBT3904-7-02 MMBT3904-7-02- F MMBT3904-7-04- F MMBT3904- 7-05-F MMBT3904-7- F , 56 57 58 59 60 61 62 PCN-1065_R5 Part Number 1N4148W-13 1N4148W-13- F 1N4148W-7 1N4148W-7-03 1N4148W-7-03- F 1N4148W-7- F 1N4148WS-13 1N4148WS-13-02 1N4148WS-13- F 1N4148WS-7 1N4148WS-7- F 1N4148WSR 1N4148WT-13 1N4148WT-7 1N4148WT-7- F ASMCC0096-13 ASMCC0096-7 ASMCC0096-7- F ASMCC0101-7 ASMCC0101-7- F ASMCC0110-7 ASMCC0126-7 ASMCC0132-7 BAL99-13 BAL99-7 BAL99-7- F BAS16-13 BAS16-13-01- F


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PDF DCS/PCN-1065 PCN-1065 c4401T-7-F MMBTA05-13 MMBTA05-7 MMBTA05-7-F MMBTA06-7-02-F MMBTA06-7-F MMDT2222A-13 MMDT2222A-7 BAV99-13-01-F ASMCC0110-7 MMBT3904R-01DK-7-F MMBT2222A-7-04-F MMBT3904-7-05-F BAW56-13-01-F MMBT3904R-01DK-7 BAS16-13-01-F 1N4148WT-7-F 1N4148W-7-F
2008 - 702 sot23

Abstract: 1N4448W13F BAV99-7-05-F sot 23 70.2 MMBT3906R BZT52C6V8 DVRN6056
Text: BAV70W-7- F BAV756DW-7- F BAV99-13- F BAV99-7-02 BAV99-7-05-F BAV99-7-09- F BAV99BRW-7- F BAV99DW-7- F , -23 MMBT3904-7-02- F SOT-23 MMBT3904-7-03- F SSOT-23 MMBT3904-7-04- F SOT-23 MMBT3904- 7-05-F SOT , -1116_R0 Package Part Number Package Part Number Package 1N4148W-13- F 1N4148W-7-03- F 1N4148W-7-06- F 1N4148W-7- F 1N4148WS-13 (3001-323) 1N4148WS-13-02- F 1N4148WS-13- F 1N4148WS-7-03- F 1N4148WS-7- F 1N4448HWS-13 1N4448HWS-7- F 1N4448W-13- F 1N4448W-7- F 1N4448WS-13 1N4448WS-7- F 2DA1774Q-7- F 2DA1774R-7- F


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PDF DCS/PCN-1116 MMST3906-7-F MMST4124-7-F MMST4126-7-F MMST4401-7-F MMTT2222A-7-F SD107WS-13 SD107WS-7-F SDA004-7 SDA006-7 702 sot23 1N4448W13F BAV99-7-05-F sot 23 70.2 MMBT3906R BZT52C6V8 DVRN6056
2007 - bav99

Abstract: A7s SOT23 SOT-23 marking A7s
Text: Values Unit Parameter min. typ. max. AC Characteristics 1.5 pF Diode capacitance CT VR = 0 V, f , = 1mA, RL = 100 Ω Test circuit for reverse recovery time D.U.T. Ι F Pulse generator: tp = , ’ (TA) VR = Parameter IF = Parameter 10 5 BAV 99 1.0 nA VF V EHB00078 Ι F , Ι F mA 200 175 IF 100 typ 150 125 max 100 50 75 50 25 0 0 0.5


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PDF BAV99. BAV99S BAV99 BAV99W BAV99S BAV99U bav99 A7s SOT23 SOT-23 marking A7s
2011 - bav99

Abstract: smd diode marking jc sot23
Text: =150 OC)BAV70 V 2.5 30 60 50 100 IR Diode Capacition(V R = 0V, f = 1.0MHz) BAL99/BAV99/BAV70 BAW56 MAX. CD µA pF t rr 6.0 ns VF Reverse Recovery Time(I F = I R = 10mA,V R = 5.0Vdc, I R(REC) = 1.0mAdc, R L = 100 OHM) Forward Voltage (at I F = 1.0mAdc) (at I F = 10mAdc) (at I F = 50mAdc) (at I F = 150mAdc) 1.5 2.0 715 855 1000 1250 mV Recovery Time , BAL99/BAV99/BAW56/BAV70 Packing information P0 P1 d E F B A W P D2 D1 T C W1


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PDF BAL99/BAV99/BAW56/BAV70 JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. bav99 smd diode marking jc sot23
2003 - free pdf transistor a7s

Abstract: marking A7s BAV99 application Diode bav99 BAV99 a7s diode BAV99 soldering application circuit bav99 A7s SOT23 Diode BAV99 SOT23
Text: = 70 V, TA = 150 °C - - 50 Forward voltage mV VF I F = 1 mA - - 715 I F = 10 mA - - 855 I F = 50 mA - - 1000 I F = 100 mA - - 1200 I F = 150 mA - - 1250 2 Feb-21-2003 BAV99. Electrical Characteristics at TA = 25 , capacitance CT Unit pF VR = 0 V, f = 1 MHz Reverse recovery time t rr - - 4 ns I F = 10 mA, I R = 10 mA, measured at I R = 1mA, RL = 100 Test circuit for reverse recovery


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PDF BAV99. BAV99/T/W BAV99S/U BAV99 BAV99S BAV99T BAV99U BAV99W OT363 OT323 free pdf transistor a7s marking A7s BAV99 application Diode bav99 BAV99 a7s diode BAV99 soldering application circuit bav99 A7s SOT23 Diode BAV99 SOT23
2007 - bav99

Abstract: BAV-99S-E6327 bav99 infineon
Text: Parameter min. typ. max. AC Characteristics 1.5 pF Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery , Oscillograph F EHN00019 Oscillograph: R = 50, tr = 0.35ns C 1pF 3 2007-09-19 BAV99 , 99 EHB00078 VF 10 4 V F = 100 mA IR 10 mA 10 3 0.5 70 V 25 V 1 mA 0.1 mA , F mA 200 175 100 IF 150 125 100 typ max 50 75 50 25 0 0 0.5 1.0 V


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PDF BAV99. BAV99S BAV99 BAV99W BAV99U BAV99U BAV-99S-E6327 bav99 infineon
2014 - bav99

Abstract: SOT23 BAW56 BAW56
Text: V, f = 1 MHz BAW56, BAV70 BAV99 IF = IR = 10 mA, RL = 100 Ω, IRR = 1 mA Document Number , 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G


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PDF BAW56, BAV70, BAV99 225mW OT-23 OT-23 MIL-STD-202, 260oC/10s 008grams bav99 SOT23 BAW56 BAW56
2004 - BAV99

Abstract: a7s diode A7s marking diode A7s SOT23 BAV99W BAV99U BAV99T BAV99S BAV99F Puls
Text: Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery time trr - - 4 ns IF = 10 , . Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 F Oscillograph Oscillograph: R = 50 , EHB00078 F = 100 mA 10 4 IR 10 mA 10 3 1 mA 0.5 0.1 mA 70 V 25 V 10 2 10 1 , mA F mA 200 175 IF 100 typ 150 125 max 100 50 75 50 25 0 0


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PDF BAV99. BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U BAV99F* BAV99 a7s diode A7s marking diode A7s SOT23 BAV99W BAV99U BAV99T BAV99S BAV99F Puls
2004 - BAV99

Abstract: bav99 infineon a7s diode
Text: . max. AC Characteristics 1.5 pF Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 , - - 4 ns Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph F , 10 4 V F = 100 mA IR 10 mA 10 3 0.5 70 V 25 V 1 mA 0.1 mA 10 2 10 1 0 , = (VF) TA = 25°C BAV 99 EHB00076 Forward current IF = (T S) BAV99 250 mA 150 F mA


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PDF BAV99. BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U BAV99F* bav99 infineon a7s diode
2007 - bav99 infineon

Abstract: marking A7s BAV99,215 BAV99U BAV99S free pdf transistor a7s BAV99 soldering bav99 Date Code BAV99 application BAV99
Text: Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery time trr - - 4 ns IF = 10 mA, IR = 10 mA, measured at IR = 1mA, RL = 100 Test circuit for reverse recovery time D.U.T. F , EHB00078 F = 100 mA 10 4 IR 10 mA 10 3 1 mA 0.5 0.1 mA 70 V 25 V 10 2 10 1 , mA F mA 200 175 IF 100 typ 150 125 max 100 50 75 50 25 0 0


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PDF BAV99. BAV99S BAV99 BAV99W BAV99S BAV99U bav99 infineon marking A7s BAV99,215 BAV99U free pdf transistor a7s BAV99 soldering bav99 Date Code BAV99 application BAV99
transistors bav99

Abstract: marking code J1 sot23 Diode Marking z3 SOT-23 BAV99 Zener diode marking w7 sot-23 BAV99a7 Marking c9 SOT23 BAV99 BAV74 BAR99
Text: Forward Current (over any 20 ms period) ' F (AV) 100 mA Repetitive Peak Forward Current 'frm 200 mA Power , 150°C Diode capacitance Cd 1.5 PF VR = 0, f = 1 MHz Forward recovery voltage V,r 1.75 V Switched to , Capacitance Capacitance Ratio Q Voltage at Vr=2V, f — 1 MHz f = 1 MHz at Vr = 3V Type Vr Ctot C9/C20 f = 50MHz Volts pF max. min. typ. max. min. max. min. ZC830A 25 9.0 10 11.0 4.5 6.0 300 , . nAat Vr (volts) lFatVF = 1V min. (mA) CT at Vr=0V f = 1 MHz max. (pF) ZC2800E 70 410 200 50 15 2.0


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PDF BAV99 OT-23 BAV99 C9/C20 50MHz ZC830A ZC831A ZC832A transistors bav99 marking code J1 sot23 Diode Marking z3 SOT-23 BAV99 Zener diode marking w7 sot-23 BAV99a7 Marking c9 SOT23 BAV74 BAR99
2007 - BAV99 INFINEON

Abstract: No abstract text available
Text: 1.5 pF Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured , Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph F EHN00019 , F = 100 mA IR 10 mA 10 3 0.5 70 V 25 V 1 mA 0.1 mA 10 2 10 1 0 25 50 75 , °C BAV 99 EHB00076 Forward current IF = (T S) BAV99 150 250 mA F mA 200 175 100 IF , 01 02 03 04 05 06 07 08 09 10 11 12 a b c d e f g h j k l n 2 0 04 p q r s t u v x y z 2 3


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PDF BAV99. BAV99S BAV99 BAV99T BAV99W BAV99U BAV99 INFINEON
2013 - BAV99

Abstract: No abstract text available
Text: Width=1 μsec IF = 50 mA C/W o C VR = 70 V VR = 0 V, f = 1 MHz MIN MAX UNIT , 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G 0.550 REF 0.022 REF


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PDF BAW56, BAV70, BAV99 225mW OT-23 OT-23 MIL-STD-202, 260oC/10s 008grams BAV99
2006 - BAV99

Abstract: marking code A7s SOt323 marking code 6X A7S marking code bav99 infineon BAV99S BAV99T BAV99W SC74 SC75
Text: . typ. max. AC Characteristics 1.5 pF Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery , circuit for reverse recovery time D.U.T. F Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = , 5 BAV 99 1.0 nA VF V EHB00078 F = 100 mA 10 4 IR 10 mA 10 3 1 mA , BAV99 150 BAV 99 EHB00076 250 mA F mA 200 175 IF 100 typ 150 125 max , e t E T 06 f u F U f u F U f u F U 07 g v


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PDF BAV99. BAV99S BAV99 BAV99T BAV99W BAV99S BAV99U BAV99 marking code A7s SOt323 marking code 6X A7S marking code bav99 infineon BAV99T BAV99W SC74 SC75
2003 - BAV99

Abstract: A7s SOT23 a7s diode SC75 SC74 BAV99W BAV99U BAV99T BAV99S BAV99F
Text: Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery time trr - - 4 ns IF = 10 , . Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 F Oscillograph Oscillograph: R = 50 , EHB00078 F = 100 mA 10 4 IR 10 mA 10 3 1 mA 0.5 0.1 mA 70 V 25 V 10 2 10 1 , 10 2 EHB00076 FM F mA BAV 99 EHB00077 D = 0.005 0.01 0.02 0.05 0.1 0.2 A


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PDF BAV99. BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U BAV99F* BAV99 A7s SOT23 a7s diode SC75 SC74 BAV99W BAV99U BAV99T BAV99S BAV99F
2012 - smd diode marking jc sot23

Abstract: Diode smd 417 smd diode marking jg smd diode code a6 smd diode a6 smd diode code 3B diode SMD MARKING CODE A6 smd diode marking A7 SOT-23 smd diode code A7 smd diode marking a6
Text: = 70V, T J =150 OC)BAV70 Diode Capacition(V R = 0V, f = 1.0MHz) BAL99/BAV99/BAV70 BAW56 Reverse Recovery Time(I F = I R = 10mA,V R = 5.0Vdc, I R(REC) = 1.0mAdc, R L = 100 OHM) Forward Voltage (at I F = 1.0mAdc) (at I F = 10mAdc) (at I F = 50mAdc) (at I F = 150mAdc) SYMBOL V BR IR µA CD 1.5 , P0 P1 d E F B W Formosa MS A P D2 T C D W1 D1 unit:mm Item Symbol , Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5


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PDF BAL99/BAV99/BAW56/BAV70 JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1021 smd diode marking jc sot23 Diode smd 417 smd diode marking jg smd diode code a6 smd diode a6 smd diode code 3B diode SMD MARKING CODE A6 smd diode marking A7 SOT-23 smd diode code A7 smd diode marking a6
smd diode marking jc sot23

Abstract: No abstract text available
Text: R = 70V, T J =150 OC)BAV70 V 2.5 30 60 50 100 IR Diode Capacition(V R = 0V, f = 1.0MHz , (I F = I R = 10mA,V R = 5.0Vdc, I R(REC) = 1.0mAdc, R L = 100 OHM) Forward Voltage (at I F = 1.0mAdc) (at I F = 10mAdc) (at I F = 50mAdc) (at I F = 150mAdc) 1.5 2.0 715 855 1000 1250 , BAL99/BAV99/BAW56/BAV70 Packing information P0 P1 d E F B A W P D2 D1 T C W1 , D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1


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PDF BAL99/BAV99/BAW56/BAV70 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. smd diode marking jc sot23
2003 - a7s diode

Abstract: A7s SOT23 free pdf transistor a7s BAV99 A7s marking diode BAV99 application A7S MARKING SOT23 diode a7s marking A7s sot363 BAV99 soldering
Text: Diode capacitance CT VR = 0 V, f = 1 MHz Reverse recovery time trr - - 4 ns IF = 10 , -27-2003 BAV99. D.U.T. Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 F Oscillograph , VF V EHB00078 F = 100 mA 10 4 IR 10 mA 10 3 1 mA 0.5 0.1 mA 70 V 25 , 150 BAV 99 10 2 EHB00076 FM F mA BAV 99 EHB00077 D = 0.005 0.01 0.02 0.05


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PDF BAV99. BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U BAV99F* a7s diode A7s SOT23 free pdf transistor a7s BAV99 A7s marking diode BAV99 application A7S MARKING SOT23 diode a7s marking A7s sot363 BAV99 soldering
2014 - Not Available

Abstract: No abstract text available
Text: BAV99-7- F BAV99-13- F BAV99Q-7- F BAV99Q-13- F Notes: Compliance Standard Standard Automotive , = 75V VR = 75V, TJ = +150°C VR = 25V, TJ = +150°C VR = 20V pF VR = 0, f = 1.0MHz ns , F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 , H K J M K1 F D G BAV99 Document number: DS12007 Rev. 25 - 2 L 3 of 4


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PDF BAV99 J-STD-020 AEC-Q101 MIL-STD-202, DS12007
2009 - BAV99-13

Abstract: KJE BAV99 BAV99 application Diode bav99 kje BAV99 BAV99-7-F kje marking code SOT-23 marking kje
Text: = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 Part mounted on Polymide PC , ) 150 Fig. 4 Power Derating Curve (Note 5) Part Number BAV99-7- F BAV99-13- F Notes: 0 , 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 , 0.11 0° 8° All Dimensions in mm A B C H K M K1 D J F L G Suggested


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PDF BAV99 AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS12007 BAV99-13 KJE BAV99 BAV99 application Diode bav99 kje BAV99 BAV99-7-F kje marking code SOT-23 marking kje
2000 - BAV99

Abstract: bav70 BAW56
Text: . 1.5 2.0 1.5 2.0 Cond. VR (V) 0 0 0 0 f (MHz) 1 1 1 1 trr (ns) Max. 4 4 4 6 Reverse recovery time Cond , ) 1000 Ta=100°C CAPACITANCE BETWEEN TERMINALS : CT (pF) f =1MHz 4 OUTPUT CURRENT : IR (nA) 20


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PDF BAV70 BAW56 BAV99 BAS16 OT-23
smd dual diode code A7

Abstract: BAV99 NXP MARKING NXP SMD MARKING CODE BAV99 BAV99 dual diode A7 W smd diode a7 smd diode marking codes Diode BAV99 SOT23 BAV99 nxp BAV99 sot23
Text: °C Cd - VR = 25 V; Tj = 150 °C - - 50 µA f = 1 MHz; VR = 0 V - trr


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PDF BAV99 BAV99 O-236AB BAV99S OT363 SC-88 BAV99W OT323 SC-70 smd dual diode code A7 BAV99 NXP MARKING NXP SMD MARKING CODE BAV99 dual diode A7 W smd diode a7 smd diode marking codes Diode BAV99 SOT23 BAV99 nxp BAV99 sot23
2011 - SOT23 DIODE marking CODE Data KJE

Abstract: 9w sot23 KJE sot23 BAV99_Q KJE BAV99 K1 SOT23 BAV99-13-F
Text: Internal Schematic Ordering Information (Note 3) Part Number BAV99-7- F BAV99-13- F BAV99Q-7- F BAV99Q-13- F , 50mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR , Typical Capacitance vs. Reverse Voltage Package Outline Dimensions A B C H K D J F G L M K1 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60


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PDF BAV99 AEC-Q101 J-STD-020 MIL-STD-202, DS12007 SOT23 DIODE marking CODE Data KJE 9w sot23 KJE sot23 BAV99_Q KJE BAV99 K1 SOT23 BAV99-13-F
2001 - bav99

Abstract: BAW56 bav70 equivalent
Text: 1.5 PF VF 715 855 1000 1250 mVdc trr Diode Capacition BAS16/BAW56 (VR=0, f


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PDF BAS16 BAV70 BAW56 BAV99 200-215m OT-23 OT-23 bav99 bav70 equivalent
2004 - Not Available

Abstract: No abstract text available
Text: 0 f (MHz) 1 1 1 trr (ns) Max. 4 4 4 Reverse recovery time Cond. VR (V) 10 10 10 IF (mA) 10 10 10 , : IF (mA) REVERSE CURRENT : IR (nA) Ta=100°C 75°C 50°C f =1MHz 4 20 10 5 2 1 0.5 0.2 0.1 0 0.2


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PDF BAV70 BAW56 BAV99 BAV70
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