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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BAV70LT1 ON Semiconductor Bristol Electronics 9,652 - -
BAV70LT1 ON Semiconductor Rochester Electronics 513,885 $0.02 $0.02
BAV70LT1 Motorola Semiconductor Products ComS.I.T. 108,000 - -
BAV70LT1 Motorola Semiconductor Products Bristol Electronics 19,549 - -
BAV70LT1 ON Semiconductor Bristol Electronics 15,167 - -
BAV70LT1 ON Semiconductor Bristol Electronics 14,790 $0.06 $0.01
BAV70LT1 ON Semiconductor Bristol Electronics 2,850 - -
BAV70LT1 Motorola Semiconductor Products Bristol Electronics 16,505 $0.06 $0.01
BAV70LT1G ON Semiconductor Allied Electronics & Automation 659 $0.02 $0.02
BAV70LT1G ON Semiconductor Future Electronics - $0.05 $0.03
BAV70LT1G ON Semiconductor Schukat electronic 1,021,000 €0.02 €0.01
BAV70LT1G ON Semiconductor ComS.I.T. 42,000 - -
BAV70LT1G ON Semiconductor Future Electronics 111,000 $0.03 $0.02
BAV70LT1G ON Semiconductor Avnet 255,000 $0.08 $0.01
BAV70LT1G ON Semiconductor Rochester Electronics 5,856,416 $0.04 $0.03
BAV70LT1G ON Semiconductor Avnet - $0.01 $0.01
BAV70LT1G ON Semiconductor Farnell element14 12,000 £0.01 £0.01
BAV70LT1G ON Semiconductor element14 Asia-Pacific 6,000 $0.02 $0.01
BAV70LT1G ON Semiconductor element14 Asia-Pacific 611 $0.07 $0.07
BAV70LT1G ON Semiconductor Avnet - $0.11 $0.02
BAV70LT1G ON Semiconductor Newark element14 27,000 $0.02 $0.02
BAV70LT1G ON Semiconductor element14 Asia-Pacific 611 $0.07 $0.07
BAV70LT1G ON Semiconductor Bristol Electronics 4,808 - -
BAV70LT1G ON Semiconductor RS Components 29,364,000 £0.01 £0.01
BAV70LT1G ON Semiconductor TME Electronic Components 20,040 $0.02 $0.01
BAV70LT1G ON SEMICONDUCTOR New Advantage Corporation 576,680 $0.05 $0.04
LBAV70LT1G LRC Leshan Radio Co Ltd Avnet - $0.03 $0.02
SBAV70LT1G ON Semiconductor ComS.I.T. 5,740 - -
SBAV70LT1G ON Semiconductor Future Electronics - $0.10 $0.06
SBAV70LT1G ON Semiconductor Chip1Stop 2,423 $0.23 $0.11
SBAV70LT1G ON Semiconductor Chip1Stop 2,799,000 $0.06 $0.04
SBAV70LT1G ON Semiconductor element14 Asia-Pacific 6,290 $0.44 $0.09
SBAV70LT1G ON Semiconductor Future Electronics 294,000 $0.04 $0.04
SBAV70LT1G ON Semiconductor Avnet - $0.08 $0.07
SBAV70LT1G ON Semiconductor Rochester Electronics 188,666 $0.05 $0.04
SBAV70LT1G ON Semiconductor Farnell element14 6,310 £0.25 £0.08
SBAV70LT1G ON Semiconductor Avnet - $0.04 $0.04
SBAV70LT1G ON SEMICONDUCTOR New Advantage Corporation 288,000 $0.08 $0.06
SBAV70LT1G ON Semiconductor Newark element14 1,510 $0.04 $0.04

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BAV70LT1 datasheet (10)

Part Manufacturer Description Type PDF
BAV70LT1 Leshan Radio Company Monolithic Dual Switching Diode Common Cathode Original PDF
BAV70LT1 Motorola Silicon Diode Original PDF
BAV70LT1 On Semiconductor Monolithic Dual Switching Diode Common Cathode Original PDF
BAV70LT1 On Semiconductor Monolithic Dual Common Cathode Switching Diode Original PDF
BAV70LT1 Transys Electronics Plastic-Encapsulated Diodes Original PDF
BAV70LT1 Zetex Semiconductors DIODE SWITCHING DIODE 70V 0.1A 3SOT-23 T/R Original PDF
BAV70LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Diode, Signal & Switching, Dual, 100V, Pkg Style SOT23 Scan PDF
BAV70LT1D On Semiconductor Monolithic Dual Switching Diode Common Cathode Original PDF
BAV70LT1-D On Semiconductor Monolithic Dual Switching Diode Common Cathode Original PDF
BAV70LT1G On Semiconductor Dual Switching Diode Common Cathode Original PDF

BAV70LT1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - BAV70LT1

Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
Text: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features · Pb-Free Packages , Package Shipping BAV70LT1 SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel BAV70LT1G , Components Industries, LLC, 2007 January, 2007 - Rev. 4 1 Publication Order Number: BAV70LT1 /D BAV70LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic


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PDF BAV70LT1 OT-23 O-236) 25laws BAV70LT1/D BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G
2001 - BAV70LT1

Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola , BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Min , , LLC, 2001 March, 2001 ­ Rev. 1 1 Publication Order Number: BAV70LT1 /D BAV70LT1 820 , , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 50 BAV70LT1 , dissipation can be doubled using the same footprint. http://onsemi.com 3 BAV70LT1 PACKAGE DIMENSIONS


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PDF BAV70LT1 r14525 BAV70LT1/D BAV70LT1
2006 - BAV70LT1

Abstract: sot-23 body marking A4
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 w This , CATHODE 2 ANODE DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Components Industries, LLC, 2006 March, 2006 - Rev. 3 1 Publication Order Number: BAV70LT1 /D BAV70LT1 820 +10 V 2.0 k 100 H tr 0.1 F IF tp IF t trr 10% t 0.1 F 90 , , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 50 BAV70LT1


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PDF BAV70LT1 BAV70LT1/D BAV70LT1 sot-23 body marking A4
2001 - Not Available

Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc BAV70LT1 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device , ANODE 1 2 ANODE DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , : BAV70LT1 /D BAV70LT1 820 +10 V 2.0 k 100 µH 0.1 µF D.U.T. 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR


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PDF BAV70LT1 236AB)
BAV70LT1

Abstract: No abstract text available
Text: BAV70LT1 SMALL SIGNAL DIODE 2 1 3 SOT-23 Plastic Package Absolute Maximum Ratings* (Ta = 25oC) Symbol Limits Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current IF(AV) 200 mA Non-repetitive peak forward surge current at Pulse , the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/05/2005 BAV70LT1 Characteristics at Ta , Code: 724) Dated : 12/05/2005 BAV70LT1 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech


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PDF BAV70LT1 OT-23 BAV70LT1
2001 - Not Available

Abstract: No abstract text available
Text: 70 200 500 Unit Vdc mAdc mAdc BAV70LT1 3 1 2 THERMAL CHARACTERISTICS Characteristic Total , ANODE 1 2 ANODE DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Publication Order Number: BAV70LT1 /D BAV70LT1 820 +10 V 2.0 k 100 µH 0.1 µF D.U.T. 50 OUTPUT PULSE , . Capacitance http://onsemi.com 240 BAV70LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE


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PDF BAV70LT1 236AB)
2007 - BAV70LT1

Abstract: BAV70LT1G BAV70LT3 BAV70LT3G Diode marking CODE 5M
Text: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features · Pb-Free Packages , Shipping BAV70LT1 SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel BAV70LT1G BAV70LT3 BAV70LT3G , , 2007 1 BAV70LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode , ; MEASURED at iR(REC) = 1.0 mA) BAV70LT1 PACKAGE DIMENSIONS SOT-23-3 (TO-236) CASE 318-08 ISSUE AL


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PDF BAV70LT1 OT-23 O-236) BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G Diode marking CODE 5M
1996 - BAV70LT1

Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV70LT1 /D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE , Junction and Storage Temperature DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25 , Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BAV70LT1 820 +10 V , Diodes Device Data 50 BAV70LT1 INFORMATION FOR USING THE SOT­23 SURFACE MOUNT PACKAGE MINIMUM


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PDF BAV70LT1/D BAV70LT1 236AB) BAV70LT1/D* BAV70LT1
a4 u SOT-23

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAV70LT1 /D Monolithic Dual Switching Diode Common Cathode ANODE - H - 0 1 CATHODE H4- -O 2 ANODE MAXIMUM RATINGS , BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) (EACH DIODE) Characteristic , BAV70LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR , O U C H TO N E 602-244-6609 INTERNET: http://Design-NET.com MOTOROLA. 0 BAV70LT1 /D BAV70LT1


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PDF BAV70LT1/D OT-23 O-236AB) a4 u SOT-23
Not Available

Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by BAV70LT1 /D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode ANODE — 3 rt— ° 1 O — ii CATHODE - \4 , BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE , BAV70LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR , , 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-2 6 62 9 2 98 MOTOROLA BAV70LT1 /D 0 BAV70LT1 /D


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PDF BAV70LT1/D
2001 - BAV70LT1

Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 MAXIMUM RATINGS , 3 CATHODE 2 ANODE DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25 , : BAV70LT1 /D BAV70LT1 820 +10 V 2.0 k 100 µH IF tp tr 0.1 µF IF t trr 10 , 8 50 BAV70LT1 INFORMATION FOR USING THE SOT­23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED , power dissipation can be doubled using the same footprint. http://onsemi.com 3 BAV70LT1


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PDF BAV70LT1 r14525 BAV70LT1/D BAV70LT1
JEDEC 1N4148

Abstract: DIODE T25 1N4148 SOT-23 1N4148 BAV70LT1
Text: =1.0mA VR=6.0V RL=100 Note:Diode On Ceramic Substrate 10mm DEVICE MARKING: BAV70LT1=A4 8.0mm 0.7mm BAV70LT1 SWITCHING DIODE I F ,FORWARD CURRENT (mA) 100 10 1.0 150 C 125 C , BAV70LT1 DUAL SURFACE MOUNT SWITCHING DIODE * Fast Switching Speed * Electrically Identical to Standard JEDEC 1N4148 * High Conductance * Surface Mount Package Ideally Suited for Automatic Insertion Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at T=25 Characteristic Rating Unit 100 V 70


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PDF BAV70LT1 1N4148 OT-23 JEDEC 1N4148 DIODE T25 1N4148 SOT-23 1N4148 BAV70LT1
2006 - BAV70LT1

Abstract: No abstract text available
Text: BAV70LT1 Switching Diode FEATURES Power dissipation, PD:225 mW (Tamb=25) Forward Current, IF:200 mA Reverse Voltage, VR:70 V Operating and storage junction temperature range: TJ, Tstg: -55 to +150 SOT-23 Plastic-Encapsulate package Device Making: A4 ELECTRICAL CHARACTERISTICS Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25. 12/20/2006 Rev. 1.00 www.SiliconStandard.com 1 BAV70LT1 Disclaimer Information furnished


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PDF BAV70LT1 OT-23 BAV70LT1
2001 - Marking g51

Abstract: BAV70LT1
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318­08, STYLE 9 SOT­23 (TO­236AB) DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol Max Unit PD 225 mW R JA PD 1.8 556 300 mW/°C °C/W mW R JA T J , T stg 2.4 417 ­55 to +150 mW/°C °C/W °C Reverse Voltage Forward


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PDF BAV70LT1 236AB) Marking g51 BAV70LT1
JEDEC 1N4148

Abstract: DIODE T25 1N4148 75v 150mA diode 1N4148 75V 150mA Diodes sot-23 Marking A4 1N4148 SOT-23 1N4148 Sot23 PACKAGE BAV70LT1 U 855 D 1n4148 sot
Text: =6.0V RL=100 Note:Diode On Ceramic Substrate 10mm 8.0mm 0.7mm DEVICE MARKING: BAV70LT1=A4 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com BAV70LT1 DUAL SURFACE MOUNT , Substrate 10mm 8.0mm 0.7mm DEVICE MARKING: BAV70LT1=A4 WEJ ELECTRONIC CO. Http:// www.wej.cn , BAV70LT1 DUAL SURFACE MOUNT SWITCHING DIODE * Fast Switching Speed * Electrically Identical to Standard JEDEC 1N4148 * High Conductance * Surface Mount Package Ideally Suited for Automatic Insertion


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PDF BAV70LT1 1N4148 OT-23 150mA BAV70LT1 JEDEC 1N4148 DIODE T25 1N4148 75v 150mA diode 1N4148 75V 150mA Diodes sot-23 Marking A4 1N4148 SOT-23 1N4148 Sot23 PACKAGE U 855 D 1n4148 sot
2001 - Not Available

Abstract: No abstract text available
Text: Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 (TO–236AB) DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol Max Unit PD 225 mW R θJA PD 1.8 556 300 mW/°C °C/W mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C Reverse Voltage Forward Current Peak


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PDF BAV70LT1 236AB)
DIODE A4

Abstract: BAV70LT1
Text: BAV70LT1 SOT-23 Plastic-Encapsulate Diodes BAV70LT1 SWITCHING DIODE SOT-23 FEATURES 1. 0 Power dissipation mW(Tamb=25) 0. 95 0. 4 2. 9 0. 95 2. 4 1. 3 Forward Current IF: 200 mA Reverse Voltage 70 V VR: Operating and storage junction temperature range 1. 9 225 PD: Unit: mm TJ, Tstg: -55 to +15 M ki ng A4 ar ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Symbol unless otherwise specified) Test


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PDF BAV70LT1 OT-23 OT-23 150mA DIODE A4 BAV70LT1
2008 - bck-28

Abstract: TRANSFORMER bck zd103 lx6503 PC101 optocoupler SWITCHING TRANSISTOR C144 d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
Text: No file text available


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PDF TND360/D SM02B-BHSS-1-TB IC300 LX6503-IDW 220pF PIT125050-3551 PBT-07087-1322G ON-MICRO-LIPS-32" bck-28 TRANSFORMER bck zd103 lx6503 PC101 optocoupler SWITCHING TRANSISTOR C144 d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
K1 mosfet

Abstract: HEADER 10X2 MOSFET 250Vac mosfet b4 irlml6402 MOSFET N set k1 set k2 BAV70LT1 250VA
Text: s CP1 4 x .1UF BAV70LT1 D2 4 Set K2 3 3 120W, 250VA 3VCC 9 6 TA1 , B1 9 B1 B3 B6 B5 B r s set rst D1 BAV70LT1 10 5 12 1 3VCC 2 5


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PDF IRLML6402CT AN80L21RMS/MINI5D VREF21 P10611CT 220VDC, 250VAC BAV70LT1 250VA K1 mosfet HEADER 10X2 MOSFET 250Vac mosfet b4 irlml6402 MOSFET N set k1 set k2 BAV70LT1 250VA
BAV70LT1 motorola

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itch in g Diode Com m on C athode ANODE -O 1 BAV70LT1 Motorola Preferred Device 3 C ICATHODE -O 2 ANODE M A XIM U M R ATING S (EACH DIODE) Rating R e v e r se V oltage F orw ard Current P e a k Forw ard S u r g e Current , 2.4 0JA 417 - 5 5 t o +150 T j . Ts tg D E V IC E M A RK IN G BAV70LT1 = A 4 E LE C T , Diodes Device Data 5 -37 BAV70LT1 2.0 k 1 0 0 | ]F 0.1 n F 0.1 [iF 1 I D.U.T. 1


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PDF BAV70LT1 O-236AB) BAV70LT1 motorola
Not Available

Abstract: No abstract text available
Text: M A X I M U M R A T IN G S (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Sym bol VR If *FM(surae| Value 70 200 500 Unit Vdc mAdc mAdc BAV70LT1 * CASE 318-07, STYLE 9 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alum ina , a Motorola designated preferred device. DEVICE MARKING BAV70LT1 = A4 ELECTRICAL


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PDF BAV70LT1* OT-23 O-236AB)
diode tvr 10 g

Abstract: No abstract text available
Text: M AXIM UM RATINGS Rating Reverse Voltage Forward C urrent Peak Forward Surge Current Symbol Vr if Value 70 200 500 Unit Vdc m Adc m Adc BAV70LT1 * CASE 318-07, STYLE 9 SOT-23 (TO-236AB) iFM(surge) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA - 2 5 X Derate above 25 C Therm al Resistance Junction to A m bien t Total Device D issipation A lu m in a S u b , is a Motorola designated preferred device. DEVICE MARKING BAV70LT1 * A4 ELECTRICAL


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PDF BAV70LT1* OT-23 O-236AB) diode tvr 10 g
2011 - BAV70LT1G

Abstract: SBAV70LT3 SBAV70LT1G
Text: , 2011 November, 2011 - Rev. 7 1 Publication Order Number: BAV70LT1 /D BAV70LT1G , SBAV70LT1G , BAV70LT1G , SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode Features http , manufacturing location. A4 M G G ORDERING INFORMATION Device BAV70LT1G SBAV70LT1G BAV70LT3G SBAV70LT3G , . tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAV70LT1G , ://onsemi.com 3 BAV70LT1G , SBAV70LT1G, BAV70LT3G, SBAV70LT3G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE


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PDF BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G AEC-Q101 OT-23 O-236) BAV70LT1/D BAV70LT1G SBAV70LT3 SBAV70LT1G
U-507

Abstract: sot23 PW1 R607 r609 C643 C654 C664
Text: 0.1U 0603B H8_VDDA 3 D501 BAV70LT1 1 2 GND R1 Q507 DTC144TKA SOT23AN_1 C649 0.22U 0603B H8AGND , VDD5 +12V KB / PS2 Q505 1 3 R578 100K 0603B JL1 1 2 JP_NET JP_SMT4_DFS D D17 2 BAV70LT1 SOT23N GND


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PDF 0603B DTC144TKA OT23AN 0805C A20GATE IRQ12 0603B U-507 sot23 PW1 R607 r609 C643 C654 C664
2004 - DIODE A4

Abstract: BAV70LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV70LT1 SWITCHING DIODE SOT-23 FEATURES mW(Tamb=25) 0. 95 0. 4 2. 9 0. 95 2. 4 1. 3 Forward Current 200 mA IF: Reverse Voltage 70 V VR: Operating and storage junction temperature range 1. 9 225 PD: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55 to +15 M ki ng A4 ar ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified


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PDF OT-23 BAV70LT1 OT-23 150mA DIODE A4 BAV70LT1
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