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Part Manufacturer Description Datasheet Download Buy Part
LQW2BAS56NJ00L Murata Manufacturing Co Ltd General Purpose Inductor, 0.056uH, 5%, 1 Element, Ferrite-Core, SMD, 0806, CHIP, 0806
LQW2BAS56NG00L Murata Manufacturing Co Ltd General Purpose Inductor, 0.056uH, 2%, 1 Element, Ferrite-Core, SMD, 0806, CHIP, 0806
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BAS56 Nexperia Farnell element14 - £0.18 £0.05
BAS56 Nexperia element14 Asia-Pacific - $0.35 $0.06
BAS56 NXP Semiconductors ComS.I.T. 1,235 - -
BAS56 Philips Semiconductors Bristol Electronics 7,430 $0.15 $0.03
BAS56 TR Central Semiconductor Corp Avnet - $0.11 $0.10
BAS56 TR Central Semiconductor Corp Future Electronics - $0.11 $0.11
BAS56,215 Nexperia Farnell element14 750 £0.30 £0.07
BAS56,215 Nexperia Newark element14 750 $0.34 $0.06
BAS56,215 Nexperia Chip1Stop 15,000 $0.03 $0.03
BAS56,215 Nexperia New Advantage Corporation 66,000 $0.11 $0.10
BAS56,215 Nexperia Future Electronics - $0.12 $0.06
BAS56,215 Nexperia Future Electronics 6,000 $0.05 $0.04
BAS56,215 Nexperia Chip1Stop 900 $0.08 $0.05
BAS56,215 Nexperia Chip1Stop 424 $0.06 $0.06
BAS56,215 Nexperia element14 Asia-Pacific - $0.07 $0.07
BAS56,215 Nexperia element14 Asia-Pacific 750 $0.42 $0.05
BAS56,235 Nexperia Avnet - $0.03 $0.03
BAS56,235 Nexperia Avnet - $0.04 $0.03
BAS56.215 Nexperia Avnet - $0.07 $0.06
BAS56.215 Nexperia Avnet - $0.04 $0.03
BAS56.215 Nexperia TME Electronic Components 1,496 $0.09 $0.05
BAS56/DG/B2215 NXP Semiconductors Rochester Electronics 3,000 - -
BAS56/DG/B2235 NXP Semiconductors Rochester Electronics 50,000 $0.05 $0.04
BAS56215 NXP Semiconductors Rochester Electronics 15,000 $0.05 $0.04
BAS56235 NXP Semiconductors Rochester Electronics 61,097 $0.05 $0.04
LQW2BAS56NG00L Murata Manufacturing Co Ltd Avnet - $0.07 $0.06
LQW2BAS56NG00L Murata Manufacturing Co Ltd Chip1Stop 1,600 $0.12 $0.08
LQW2BAS56NJ00L Murata Manufacturing Co Ltd Avnet - $0.07 $0.06
LQW2BAS56NJ00L Murata Manufacturing Co Ltd Chip1Stop 1,884 $0.12 $0.08
LQW2BAS56NJ00L Murata Manufacturing Co Ltd Future Electronics 2,000 $0.06 $0.06

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BAS56 datasheet (16)

Part Manufacturer Description Type PDF
BAS56 Central Semiconductor DUAL HIGH CURRENT SWITCHING DIODE Original PDF
BAS56 Kexin High Speed Double Diode Original PDF
BAS56 NXP Semiconductors BAS56 - High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V Original PDF
BAS56 Philips Semiconductors High-speed double diode Original PDF
BAS56 Philips Semiconductors Ultra High Speed Diode Original PDF
BAS56 TY Semiconductor High Speed Double Diode - SOT-143 Original PDF
BAS56 Central Semiconductor DUAL HIGH CURRENT SWITCHING DIODE Scan PDF
BAS56 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BAS56 Philips Semiconductors High-speed double diode Scan PDF
BAS56,215 NXP Semiconductors High-speed double diode - C<sub>d</sub> max.: 2.5 pF; Configuration: dual isolated ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=60V nA; IFRM: 600 mA; t<sub>rr</sub> max: 6 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 60 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
BAS56,215 NXP Semiconductors BAS56 - DIODE 0.2 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode Original PDF
BAS56,235 NXP Semiconductors High-speed double diode - C<sub>d</sub> max.: 2.5 pF; Configuration: dual isolated ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=60V nA; IFRM: 600 mA; t<sub>rr</sub> max: 6 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 60 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
BAS56,235 NXP Semiconductors BAS56 - DIODE 0.2 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode Original PDF
BAS56T/R NXP Semiconductors High-speed double diode - C<sub>d</sub> max.: 2.5 pF; Configuration: dual isolated ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=60V nA; IFRM: 600 mA; t<sub>rr</sub> max: 6 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 60 V Original PDF
BAS56TR Philips Semiconductors High-speed double diode Original PDF
BAS56T/R Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

BAS56 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - Not Available

Abstract: No abstract text available
Text: status Change notice Supersedes BAS56 v.3 20100629 Product data sheet - BAS56_2 â , Section 11 “Soldering”: added Section 13 “Legal information”: updated BAS56_2 19960910 Product specification - BAS56_1 BAS56_1 19960423 Product specification - - BAS56 , BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile , = 100 Ω; measured at IR = 40 mA. BAS56 NXP Semiconductors High-speed double diode 2


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PDF BAS56 OT143B AEC-Q101
2010 - BAS56

Abstract: smd marking l5
Text: ": updated BAS56_2 19960910 Product specification - BAS56_1 BAS56_1 19960423 Product , BAS56 v.3 20100629 Product data sheet - BAS56_2 · The format of this data sheet has , BAS56 High-speed double diode Rev. 3 - 29 June 2010 Product data sheet 1. Product profile , . BAS56 NXP Semiconductors High-speed double diode 2. Pinning information Table 2. Pinning , Description Version BAS56 - plastic surface-mounted package; 4 leads SOT143B Table 4


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PDF BAS56 OT143B AEC-Q101 BAS56 smd marking l5
Marking A2t smd

Abstract: sot143 marking code JTp A2t diode smd Z3B DIODE smd diode code a2t high speed double diode sot143
Text: reverse voltage: max. 60 V · Repetitive peak forward current: max. 600 mA. 4 3 4 3 BAS56 PINNING PIN 1 2 3 4 DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1) DESCRIPTION The BAS56 , with the Absolute Maximum Rating System (IEC 134). SYMBOL V rrm V rrm Vr Vr If BAS56 PARAMETER , double diode ELECTRICAL CHARACTERISTICS BAS56 Tj = 25 °C; unless otherwise specified. SYMBOL VF , Semiconductors Product specification High-speed double diode GRAPHICAL DATA BAS56 1996 Sep 12 5


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PDF BAS56 BAS56 OT143 OT143) 711002b Marking A2t smd sot143 marking code JTp A2t diode smd Z3B DIODE smd diode code a2t high speed double diode sot143
jtp sot 143

Abstract: smd diode sot-143 marking code a2 JTP 00 High-speed double diode BAS56 code l51 smd diode marking code 143 smd diode marking code L51
Text: Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES • Small , €¢ High speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS56 consists of two highspeed , Service CopyRight 2003 Philips Semiconductors Product specification High-speed double diode BAS56 LIMITING , High-speed double diode BAS56 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL , double diode BAS56 GRAPHICAL DATA 300 ■f (mA) 200 100 .CD


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PDF BAS56 OT143 MAM059 OT143) 711002b jtp sot 143 smd diode sot-143 marking code a2 JTP 00 High-speed double diode code l51 smd diode marking code 143 smd diode marking code L51
smd diode marking code L51

Abstract: sot143 marking code JTp code l51 MAM059 BAS56 Double high-speed switching diode 134 B "360 SMD"
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS56 High-speed double diode , BAS56 FEATURES DESCRIPTION · Small plastic SMD package The BAS56 consists of two highspeed , High-speed double diode BAS56 LIMITING VALUES In accordance with the Absolute Maximum Rating System , mW Philips Semiconductors Product specification High-speed double diode BAS56 , BAS56 PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B


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PDF M3D070 BAS56 BAS56 OT143 smd diode marking code L51 sot143 marking code JTp code l51 MAM059 Double high-speed switching diode 134 B "360 SMD"
smd diode marking code L51

Abstract: A2 marking diode SOT143 code l51 sot143 marking code JTp A2 DIODE SMD CODE MARKING BAS56 MAM059
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D070 BAS56 High-speed double , 1996 Apr 23 Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION · Small plastic SMD package The BAS56 consists of two highspeed switching , Semiconductors Product specification High-speed double diode BAS56 LIMITING VALUES In accordance , double diode BAS56 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL


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PDF M3D070 BAS56 BAS56 OT143 smd diode marking code L51 A2 marking diode SOT143 code l51 sot143 marking code JTp A2 DIODE SMD CODE MARKING MAM059
1999 - smd diode marking code L51

Abstract: A2 marking diode SOT143 sot143 marking code JTp BAS56
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS56 High-speed double diode , specification High-speed double diode BAS56 FEATURES DESCRIPTION · Small plastic SMD package The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and , Sep 10 2 Philips Semiconductors Product specification High-speed double diode BAS56 , Semiconductors Product specification High-speed double diode BAS56 ELECTRICAL CHARACTERISTICS Tj =


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PDF M3D070 BAS56 BAS56 OT143 smd diode marking code L51 A2 marking diode SOT143 sot143 marking code JTp
jtp sot 143

Abstract: smd diode marking HA A2 diode smd BAS56 marking code diode Eb SMD smd code JTP 00 diode
Text: Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES â , . APPLICATIONS • High speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS56 consists of , High-speed double diode BAS56 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , Manufacturer Philips Semiconductors High-speed double diode BAS56 ELECTRICAL CHARACTERISTICS Tj = 25 °C , Philips Semiconductors Product specification High-speed double diode BAS56 GRAPHICAL DATA 300 ■f


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PDF BAS56 BAS56 OT143 MAM059 711002b jtp sot 143 smd diode marking HA A2 diode smd marking code diode Eb SMD smd code JTP 00 diode
Not Available

Abstract: No abstract text available
Text: Product specification Philips Semiconductors High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two high­ speed switching diodes , diode BAS56 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , 250 mW +150 °C 150 °C Philips Semiconductors Product specification BAS56 , Philips Semiconductors Product specification High-speed double diode BAS56 GRAPHICAL DATA


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PDF BAS56 BAS56 M8H283
Not Available

Abstract: No abstract text available
Text: BAS56 _ y \ _ SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists o f tw o separate planar epitaxial ultra-high speed, high , TOP V IE W November 1993 153 BAS56 J V RATINGS Lim iting values in accordance w , Silicon planar epitaxial ultra-high speed diode BAS56 Forward recovery voltage when switched to I p , 155 BAS56 _ Recovery charge when switched from


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PDF BAS56 BAS56 BAW62
2009 - BAS56

Abstract: code l51
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D070 BAS56 High-speed double diode , sheet High-speed double diode BAS56 PINNING FEATURES DESCRIPTION · Small plastic SMD package The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and , NXP Semiconductors Product data sheet High-speed double diode BAS56 LIMITING VALUES In , sheet High-speed double diode BAS56 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise


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PDF M3D070 BAS56 BAS56 OT143 code l51
Philips fr 153 30

Abstract: No abstract text available
Text: ■bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ] > BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed , ,150 TOP VIEW f November 1993 153 ■BAS56 DD245Tfl AMS H A P X N AUER PHILIPS , /DISCRETE BAS56 Forward recovery voltage when switched to I p = 400 mA; t r1 = 30 ns I p = 400 mA; t , November 1993 155 BAS56 ■b b S B ' m 0024300 223 « A P X N AMER PHILIPS/DISCRETE b7E D


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PDF bbS3T31 BAS56 BAS56 1Z73J12 BAW62 Philips fr 153 30
2003 - code l51

Abstract: L51 MARKING BAS56
Text: BAS56 DUAL HIGH CURRENT SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high speed switching applications. MARKING CODE: L51 SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL , . BAS56 DUAL HIGH CURRENT SWITCHING DIODE SOT-143 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 1


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PDF BAS56 OT-143 200mA 500mA 400mA, 100ns 13-November code l51 L51 MARKING
M/MARKING CODE R7 DIODE

Abstract: BAS56
Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching , =30ns tr=100ns 1.2 V 1.5 V R7 (25-August 2010) BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH


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PDF BAS56 BAS56 OT-143 200mA 500mA 400mA, 100ns M/MARKING CODE R7 DIODE
2010 - SOT143 DUAL DIODE

Abstract: BAS56
Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching , =100ns 1.2 V 1.5 V Qs VFR VFR R5 (20-November 2009) BAS56 SURFACE MOUNT DUAL, ISOLATED


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PDF BAS56 BAS56 OT-143 200mA 500mA 400mA, 100ns SOT143 DUAL DIODE
2004 - SOT143 Marking l51

Abstract: code l51 L51 transistor marking sot-143 BAS56
Text: Central BAS56 TM Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching applications , MAX UNITS R4 (3-December 2003) Central TM BAS56 Semiconductor Corp. DUAL


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PDF BAS56 OT-143 35unless 200mA 500mA 400mA, SOT143 Marking l51 code l51 L51 transistor marking sot-143 BAS56
BAW62 SMD

Abstract: BAS56 "parasitic capacitance" smd BAW62 NS156 diode fr 153
Text: ■bbSa^l OGE^I? TGI ■APX N AMER PHILIPS/DISCRETE b7E P BAS56 A_ SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high , Material Copyrighted By Its Respective Manufacturer ■I ^53^31 □DEMETfl flMS HAPX BAS56 m AMER PHILIPS , ; tr2 = 100 ns Vfr < < 2,0 1,5 BAS56 v v input signal Fig. 2 Test circuit and waveforms; forward , – bbS3T31 002M300 223 «APX BAS56 N AMER PHILIPS/DISCRETE b7E D _A_ Recovery charge when switched from lF


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PDF BAS56 BAS56 OT-143. bbS3T31 002M300 BAW62 BAW62 SMD "parasitic capacitance" smd BAW62 NS156 diode fr 153
Not Available

Abstract: No abstract text available
Text: BAS56 DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES Central DESCRIPTION: Semiconductor Corp. The CENTRAL SEMICONDUCTOR BAS56 con sists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching applications. MARKING CODE , see Process CPD41 on page 880. ll tr V R4 (3-December 2003) -| Q4 Central BAS56


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PDF BAS56 OT-143 CPD41 OT-143
2010 - code l51

Abstract: MARKING CODE R7 DIODE "wl5" WL5 SOT-143 BAS56 L51 MARKING
Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching , V 1.5 V Qs VFR VFR R7 (25-August 2010) BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH


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PDF BAS56 BAS56 OT-143 200mA 500mA 400mA, 100ns code l51 MARKING CODE R7 DIODE "wl5" WL5 SOT-143 L51 MARKING
diode MARKING CODE 107

Abstract: No abstract text available
Text: BAS56 DUAL HIGH CURRENT SWITCHING DIODE Central" Sem iconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high speed switching applications. MARKING CODE: L51 SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL , -November 2002) -)06 Central Sem iconductor Corp. BAS56 DUAL HIGH CURRENT SWITCHING DIODE SOT


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PDF BAS56 OT-143 CPD41, 13-November OT-143 diode MARKING CODE 107
1997 - BAS56

Abstract: No abstract text available
Text: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. SOT-143 CASE MAXIMUM RATINGS (TA=25oC) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous


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PDF BAS56 OT-143 150oC 200mA 500mA 400mA, 100ns BAS56
BAS56

Abstract: code l51
Text: Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage Vr , Manufacturer BAS56 DUAL HIGH CURRENT SWITCHING DIODE SOT-143 CASE All dimensions in inches (mm). LEAD CODE


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PDF BAS56 200mA 500mA 400mA, 100ns BAS56 OT-143 code l51
Not Available

Abstract: No abstract text available
Text: BAS56 DUAL HIGH CURRENT SWITCHING DIODE Central" sem iconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. % SOT-143 CASE MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward


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PDF BAS56 OT-143 4000tp 200mA 500mA 400mA, 500S2
Not Available

Abstract: No abstract text available
Text: Product specification BAS56 Unit: mm Features Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage:max. 60 V Repetitive peak reverse voltage:max. 60 V Repetitive peak forward current:max. 600 mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol repetitive peak reverse voltage Test Condition Min Max 60 VRRM series connection 120 60 , specification BAS56 Electrical Characteristics Ta = 25 Symbol Test Condition Max Unit forward


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PDF BAS56
Not Available

Abstract: No abstract text available
Text: Central" BAS56 S e m ic o n d u c to r C o rp . DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. SOT-143 CASE MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage


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PDF BAS56 OT-143 200mA 500mA 400mA, 500i2 100ns
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