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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BAS29 Philips Semiconductors ComS.I.T. - -
BAS29 ON Semiconductor Avnet 0 $0.04 $0.03
BAS29 ON Semiconductor Farnell element14 0 £0.12 £0.03
BAS29 ON Semiconductor element14 Asia-Pacific 0 $0.17 $0.03
BAS29 ON Semiconductor Future Electronics 0 $0.03 $0.03
BAS29 ON Semiconductor element14 Asia-Pacific 0 $0.17 $0.03
BAS29 Fairchild Semiconductor Corporation Rochester Electronics 258 $0.04 $0.03
BAS29 ON Semiconductor Chip1Stop 8,475 $0.03 $0.01
BAS29 Fairchild Semiconductor Corporation Bristol Electronics 2,555 $0.11 $0.03
BAS29 Philips Semiconductors Bristol Electronics 5,900 $0.11 $0.02
BAS29 Philips Semiconductors Chip One Exchange - -
BAS29 ON Semiconductor RS Components 200 £0.04 £0.03
BAS29 ON Semiconductor Avnet 0 $0.07 $0.06
BAS29 Fairchild Semiconductor Corporation New Advantage Corporation 18,000 $0.04 $0.03
BAS29,215 Nexperia Future Electronics 0 $0.03 $0.03
BAS29,215 Nexperia Farnell element14 0 £0.18 £0.05
BAS29,215 NXP Semiconductors Bristol Electronics - -
BAS29,215 NXP Semiconductors Chip One Exchange - -
BAS29,215 Nexperia Avnet 0 $0.04 $0.04
BAS29,215 Nexperia Chip1Stop 400 $0.12 $0.08
BAS29,215 NEXPERIA RS Components 325 £0.10 £0.06
BAS29,215 Nexperia Avnet 0 $0.03 $0.03
BAS29,215 Nexperia element14 Asia-Pacific 0 $0.11 $0.11
BAS29,215 Nexperia element14 Asia-Pacific 0 $0.42 $0.06
BAS29,215 Nexperia element14 Asia-Pacific 0 $0.42 $0.06
BAS29.215 Nexperia TME Electronic Components 1,280 $0.12 $0.07
BAS29TR Central Semiconductor Corp America II Electronics - -
BAS29TR NXP Semiconductors ComS.I.T. - -

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BAS29 datasheet (23)

Part Manufacturer Description Type PDF
BAS29 Continental Device India Silicon Planar Epitaxial High Speed Diode Original PDF
BAS29 Fairchild Semiconductor High Voltage General Purpose Diode Original PDF
BAS29 Fairchild Semiconductor Small Signal Diode Original PDF
BAS29 Kexin General Purpose Controlled Avalanche Diodes Original PDF
BAS29 NXP Semiconductors BAS29 - General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V Original PDF
BAS29 Philips Semiconductors General purpose controlled avalanche (double) diodes Original PDF
BAS29 Philips Semiconductors Silicon Planar Epitaxial High-Speed Diode Original PDF
BAS29 RFE International Rectifier Diode, Switching Diode, Single, 120 MinV, SOT-23, 3-Pin Original PDF
BAS29 Transys Electronics SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Original PDF
BAS29 TY Semiconductor TY Equivalent - General Purpose Controlled Avalanche Diodes - SOT-23 Original PDF
BAS29 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BAS29 Jinan Gude Electronic Device SURFACE MOUNT SWITCHING DIODES Scan PDF
BAS29 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BAS29 National Semiconductor Pro Electron Surface Mount Diodes Scan PDF
BAS29 National Semiconductor Diode Pro Electron Series Scan PDF
BAS29 National Semiconductor Silicon Single Junction Diodes Scan PDF
BAS29 National Semiconductor Diode - Pro Electron Series Scan PDF
BAS29,215 NXP Semiconductors General purpose controlled avalanche (double) diodes - C<sub>d</sub> max.: 35 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 100@VR=90V nA; IFRM: 600 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BAS29_D87Z Fairchild Semiconductor General Purpose High Voltage Diode; Package: SOT-23; No of Pins: 3; Container: Tape &amp; Reel Original PDF
BAS29_NL Fairchild Semiconductor General Purpose High Voltage Diode Original PDF

BAS29 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - smd code marking A8 diode

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , (double) diodes BAS29 ; BAS31; BAS35 PINNING FEATURES · Small plastic SMD package DESCRIPTION PIN · Switching speed: max. 50 ns BAS29 · General application BAS31 1 · Repetitive , technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single , (1) BAS29 BAS31 L21 or V1 BAS35 b. BAS29 diode. L20 or A8 L22 or V2 d. BAS35


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode BAS31 BAS29 BAS35 smd diode marking v2
2009 - Not Available

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Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BAS29 ; BAS31; BAS35 General purpose , FEATURES BAS29 ; BAS31; BAS35 PINNING • Small plastic SMD package DESCRIPTION PIN • Switching speed: max. 50 ns • General application BAS29 BAS31 1 • Repetitive peak forward , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 , . 2 n.c. c. BAS31 diode. 1 2 1 MARKING 3 TYPE NUMBER MARKING CODE(1) BAS29


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31
BAS29

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Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29 ; BAS31; BAS35 General , specification General purpose controlled avalanche (double) diodes FEATURES BAS29 ; BAS31; BAS35 , reverse voltage: max. 90 V · Repetitive peak reverse voltage: max. 110 V DESCRIPTION PIN BAS29 1 , rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in , diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode. MAM233 MARKING TYPE NUMBER


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 MBG440
smd code marking A8 diode

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , specification General purpose controlled avalanche (double) diodes BAS29 ; BAS31; BAS35 PINNING FEATURES · Small plastic SMD package DESCRIPTION PIN · Switching speed: max. 50 ns BAS29 · , SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The , . 1 2 1 MARKING 3 TYPE NUMBER MARKING CODE(1) BAS29 BAS31 L21 or V1 BAS35


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 DIODE SMD A8 l21 smd code smd diode A8 BAS35 BAS29
2001 - smd diode marking code

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , (double) diodes FEATURES BAS29 ; BAS31; BAS35 PINNING · Small plastic SMD package · Switching , reverse voltage: max. 110 V DESCRIPTION PIN BAS29 1 anode 2 3 BAS31 BAS35 anode , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The , outline. 2 n.c. c. BAS31 diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode. MAM233


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd diode marking code smd transistor k2 BAS29 BAS31 BAS35 l21 smd code L21 SOT23 smd code marking sot23
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Text: ■bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29 , BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode , Fig. 1 SOT-23. Dimensions in mm Marking code: BAS29 = L20 BAS31= L21 BAS35 = L22 0.150 3 MBB111 BAS29 3 MBBOS7 BAS31 TOP VIEW 3 M e e t 75 BAS35 March 1991


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PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29
1999 - BAS29

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , (double) diodes FEATURES BAS29 ; BAS31; BAS35 PINNING · Small plastic SMD package · Switching , reverse voltage: max. 110 V DESCRIPTION PIN BAS29 BAS31 BAS35 1 anode anode , technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a , . Simplified outline. 2 n.c. c. BAS31 diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 l21 smd code
Not Available

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Text: BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i BAS29 JL 02 0.89" .60 .40 2.00 ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak , V 75 ns 90 V 600 mA 600 mA »1 BAS29 , BAS31, BAS35 Average rectified forward


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PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS29- BAS35 BAS29
BAS29

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Text:  BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking BAS29- L20 BAS31 - L21 BAS35 - L22 BAS29 w-H BAS31 2-H4 BAS35 M4-1 2.6 2.4 0.60 _ 0.4Q PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 _1.02 0.89* _2.00_ 1.60 0.14 0.09 5 R0.1 (.004)" 0.12 0.02 IK R0.05 (.002 , Irrm max. 600 mA COIL BAS29 , BAS31, BAS35 Average rectified forward current (averaged over any 20


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PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- BAS29 l21 diode marking
2001 - Not Available

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Text: Marking BAS29– L20 BAS31 – L21 BAS35 – L22 2 BAS29 1 3 2 BAS31 1 3 2 , IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in , . 90 600 250 150 0.84 V mA mA °C V 75 ns 90 V 600 mA 600 mA Page 1 of 3 BAS29


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PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29â BAS31
Not Available

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Text: °C 0,84 V 50 ns MECHANICAL DATA Fig, 1 SOT-23. Dimensions in mm Marking code: BAS29= , _ A_ BAS29 BAS31 BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29 , BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and the BAS35 has two diodes , BAS29 BAS31 BAS35 RATINGS (per diode) Limiting values in accorcance w ith the Absolute Maximum


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PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29
Not Available

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Text: ) diodes_ FEATURES BAS29 ; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application DESCRIPTION PIN BAS29 BAS31 BAS35 1 , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The , . 3 b. BAS29 diode. c. BAS31 diode. 3 d. BAS35 diode. MAM233 MARKING TYPE NUMBER MARKING CODE BAS29 L20 BAS31 L21 BAS35 L22 1996 Sep 10 Fig.1 Simplified outline


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PDF BAS29; BAS31; BAS35 BAS29 BAS31 M8H32
AY MARKING 3-PIN

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Text: ) diodes BAS29 ; BAS31 ; BAS35 PINNING FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application DESCRIPTION PIN BAS29 BAS31 BAS35 1 â , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The , . c. BAS31 diode. b. BAS29 diode. d. BAS35 diode. MARKING TYPE NUMBER BAS29 MARKING , symbols. 2 Philips S em iconductors P roduct specification BAS29 ; BAS31; BAS35 General


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PDF BAS29; BAS31 BAS35 BAS29 BAS31; AY MARKING 3-PIN
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Text: Il BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking BAS2&- L20 BAS31 - L21 BAS35 - L22 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.46 0.14 0.70 0,50 1.4 1.2 w -H BAS29 2.6 2.4 Ô3B 3 L -+ 4 BAS31 (i BAS29 , BAS31, BAS35 Average rectified forward current (averaged


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PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS31
BAS29

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Text: Transys Electronics L I M I T E D SOT-23 BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29­ L20 BAS31 ­ L21 BAS35 ­ L22 2 BAS29 1 3 2 BAS31 1 3 2 BAS35 1 3 ABSOLUTE MAXIMUM RATINGS (per diode , 250 150 0.84 V mA mA °C V 75 ns 90 V 600 mA 600 mA BAS29 , BAS31, BAS35 Average


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PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31
BAS29

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Text: PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29 , BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and , SOT-23. Dimensions in mm Marking code: BAS29 = L20 BAS31 = L21 BAS35 = L22 0.75 0.60 10° max I , MBB) 11 -NQ.2®|A[BI BAS29 1.4 2.5 1.2 max -0.1 TOP VIEW —H-$-|Q.I(M)|XJB1 3 MBBOS7 BAS31 3 MBB >7$ BAS35 March 1991 137 This Material Copyrighted By Its Respective Manufacturer BAS29 BAS31


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PDF bb53T3i BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29 l21 code L21 SOT23 SOT23 DIODE marking CODE AV Philips MBB
2009 - code a1 SMD

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29 ; BAS31; BAS35 General , ) diodes FEATURES BAS29 ; BAS31; BAS35 PINNING · Small plastic SMD package DESCRIPTION PIN · Switching speed: max. 50 ns BAS29 · General application BAS31 1 · Repetitive peak , technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single , (1) BAS29 BAS31 L21 or V1 BAS35 b. BAS29 diode. L20 or A8 L22 or V2 d. BAS35


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 code a1 SMD smd code marking A8 diode BAS29 BAS31 BAS35 l21 smd code smd code marking WV
BAS29

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Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29­ L20 BAS31 ­ L21 BAS35 ­ L22 2 BAS29 1 3 2 BAS31 , Page 1 of 3 BAS29 , BAS31, BAS35 Average rectified forward current (averaged over any 20 ms


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PDF ISO/TS16949 OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21
L21 SMD

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Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General , SMD Type KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) Electrical Characteristics Ta = 25 Parameter , Min L20 L21 L22 www.kexin.com.cn Diodes SMD Type KAS29/KAS31/KAS35 ( BAS29 /BAS31 , /KAS31/KAS35 ( BAS29 /BAS31/BAS35) f = 1 MHz; Tj = 25 ° C. (1) VR = 90 V; maximum values. (2) VR =


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PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode L20 SMD smd diode 1301 smd diode marking t1 smd diode br 20 bas35 l21 diode marking
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Text: 83633^4 DDDD718 7b4 ■BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 3 BAS29 2 -H 4 0.14 0.48 0.38 W -H « -ft 2.6 2.4 BAS31 _1.02 « -ft 0.60 , V mA mA °C V 75 ns 90 V 600 mA 600 mA ni 2 3Û 33 T 4 GGDD?!1 bTQ ■! BAS29


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PDF DDDD718 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29-
BAS29

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Text: ■2303314 D00G716 7b4 ■BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking BAS29- L20 BAS31 - L21 BAS35 - L22 BAS29 W- BAS31 BAS35 2.6 2.4 0.60i 0.40 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 3 J' I 0.39 _2.00_ 1.80 .0.14 5 R0.1 (.004)" 0.12 , Copyrighted By Its Respective Manufacturer »IL 2353314 OOOtmR bTQ ■BAS29 , BAS31, BAS35 Average


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PDF D00G716 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- diode 7B4
Not Available

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Text: Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 , 4008-318-123 1 of 4 Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) Electrical , 4008-318-123 2 of 4 Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) Typlcal , Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) f = 1 MHz; Tj = 25 ° C. (1) VR =


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PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29
2001 - BAS29

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29­ L20 BAS31 ­ L21 BAS35 ­ L22 2 BAS29 1 3 2 BAS31 , Page 1 of 3 BAS29 , BAS31, BAS35 Average rectified forward current (averaged over any 20 ms


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PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21
2002 - Not Available

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Text: BAS29 BAS29 Connection Diagram 3 3 3 L20 2 1 1 2 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction , BAS29 , Rev. A Fairchild Semiconductor


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PDF BAS29 OT-23 300us, BAS29,
2002 - 7121

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Text: BAS29 BAS29 Connection Diagram 3 3 3 L20 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = , =300us, Duty Cycle=2% 2002 Fairchild Semiconductor Corporation BAS29 , Rev. A TRADEMARKS The following


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PDF BAS29 OT-23 7121 BAS29
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