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ON Semiconductor
BAS29 Diode Small Signal Switching 120V 0.2A 3-Pin SOT-23 T/R (Alt: BAS29)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) BAS29 Tape and Reel 0 42 Weeks, 2 Days 3,000 - - - - €0.02489 More Info
BAS29 Tape and Reel 0 42 Weeks 21,000 - - - - - More Info
BAS29 Reel 0 42 Weeks 27,000 - - - - - More Info
Newark element14 (2) BAS29 Reel 0 1 $0.04 $0.04 $0.04 $0.04 $0.035 More Info
BAS29 Cut Tape 34,469 1 $0.222 $0.153 $0.067 $0.047 $0.047 More Info
TME Electronic Components BAS29 2,984 10 - $0.0546 $0.0469 $0.0327 $0.0293 More Info
element14 Asia-Pacific (3) BAS29 34,469 5 - $0.195 $0.195 $0.063 $0.043 More Info
BAS29 0 5 - $0.195 $0.195 $0.063 $0.043 More Info
BAS29 0 3,000 - - - - $0.04 More Info
Farnell element14 BAS29 34,469 5 - £0.133 £0.054 £0.049 £0.049 More Info
Nexperia
BAS29,215 Diode Switching 110V 0.25A 3-Pin TO-236AB T/R (Alt: BAS29,215)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) BAS29,215 Tape and Reel 0 27 Weeks, 1 Days 3,000 - - - - €0.04068 More Info
BAS29,215 Tape and Reel 0 26 Weeks 18,000 - - - - - More Info
BAS29,215 Reel 0 26 Weeks 3,000 - - - - $0.03247 More Info
Newark element14 BAS29,215 Cut Tape 1,300 1 $0.372 $0.286 $0.135 $0.075 $0.075 More Info
RS Components BAS29,215 Reel 2,350 50 - - £0.1 £0.064 £0.064 More Info
element14 Asia-Pacific BAS29,215 1,300 1 $0.538 $0.356 $0.15 $0.101 $0.069 More Info
Farnell element14 BAS29,215 1,300 5 - £0.202 £0.0686 £0.0666 £0.0666 More Info
More Distributors
New Advantage Corporation BAS29,215 9,000 9,000 - - - - $0.0733 More Info
Fairchild Semiconductor Corporation
BAS29
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BAS29 258 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
Bristol Electronics (2) BAS29 2,555 45 - - $0.1125 $0.0338 $0.0338 More Info
BAS29 11,968 - - - - - More Info
Central Semiconductor Corp
BAS29TR
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics BAS29TR 3,000 - - - - - More Info
NXP Semiconductors
BAS29,215
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BAS29,215 3,000 - - - - - More Info
Chip 1 Exchange BAS29,215 3,900 - - - - - More Info
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Philips Semiconductors
BAS29 Rectifier Diode, Avalanche, 1 Element, 0.25A, 110V V(RRM), Silicon, TO-236AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BAS29 15,000 - - - - - More Info
Chip 1 Exchange BAS29 500 - - - - - More Info
NXP Semiconductors
BAS29TR Rectifier Diode, Avalanche, 1 Element, 0.25A, 110V V(RRM), Silicon, TO-236AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BAS29TR 2,197 - - - - - More Info
NXP Semiconductors
BAS29
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange BAS29 1,066 - - - - - More Info

BAS29 datasheet (23)

Part Manufacturer Description Type PDF
BAS29 Continental Device India Silicon Planar Epitaxial High Speed Diode Original PDF
BAS29 Fairchild Semiconductor High Voltage General Purpose Diode Original PDF
BAS29 Fairchild Semiconductor Small Signal Diode Original PDF
BAS29 Kexin General Purpose Controlled Avalanche Diodes Original PDF
BAS29 NXP Semiconductors BAS29 - General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V Original PDF
BAS29 Philips Semiconductors General purpose controlled avalanche (double) diodes Original PDF
BAS29 Philips Semiconductors Silicon Planar Epitaxial High-Speed Diode Original PDF
BAS29 RFE International Rectifier Diode, Switching Diode, Single, 120 MinV, SOT-23, 3-Pin Original PDF
BAS29 Transys Electronics SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Original PDF
BAS29 TY Semiconductor TY Equivalent - General Purpose Controlled Avalanche Diodes - SOT-23 Original PDF
BAS29 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BAS29 Jinan Gude Electronic Device SURFACE MOUNT SWITCHING DIODES Scan PDF
BAS29 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BAS29 National Semiconductor Pro Electron Surface Mount Diodes Scan PDF
BAS29 National Semiconductor Diode Pro Electron Series Scan PDF
BAS29 National Semiconductor Silicon Single Junction Diodes Scan PDF
BAS29 National Semiconductor Diode - Pro Electron Series Scan PDF
BAS29,215 NXP Semiconductors General purpose controlled avalanche (double) diodes - C<sub>d</sub> max.: 35 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 100@VR=90V nA; IFRM: 600 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BAS29_D87Z Fairchild Semiconductor General Purpose High Voltage Diode; Package: SOT-23; No of Pins: 3; Container: Tape &amp; Reel Original PDF
BAS29_NL Fairchild Semiconductor General Purpose High Voltage Diode Original PDF

BAS29 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - smd code marking A8 diode

Abstract: BAS31 BAS35 BAS29 smd diode marking v2
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , (double) diodes BAS29 ; BAS31; BAS35 PINNING FEATURES · Small plastic SMD package DESCRIPTION PIN · Switching speed: max. 50 ns BAS29 · General application BAS31 1 · Repetitive , technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single , (1) BAS29 BAS31 L21 or V1 BAS35 b. BAS29 diode. L20 or A8 L22 or V2 d. BAS35


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode BAS31 BAS35 BAS29 smd diode marking v2
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BAS29 ; BAS31; BAS35 General purpose , FEATURES BAS29 ; BAS31; BAS35 PINNING • Small plastic SMD package DESCRIPTION PIN • Switching speed: max. 50 ns • General application BAS29 BAS31 1 • Repetitive peak forward , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 , . 2 n.c. c. BAS31 diode. 1 2 1 MARKING 3 TYPE NUMBER MARKING CODE(1) BAS29


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31
BAS29

Abstract: BAS31 BAS35 MBG440
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29 ; BAS31; BAS35 General , specification General purpose controlled avalanche (double) diodes FEATURES BAS29 ; BAS31; BAS35 , reverse voltage: max. 90 V · Repetitive peak reverse voltage: max. 110 V DESCRIPTION PIN BAS29 1 , rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in , diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode. MAM233 MARKING TYPE NUMBER


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 MBG440
smd code marking A8 diode

Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 DIODE SMD A8 l21 smd code smd diode A8 BAS35 BAS29
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , specification General purpose controlled avalanche (double) diodes BAS29 ; BAS31; BAS35 PINNING FEATURES · Small plastic SMD package DESCRIPTION PIN · Switching speed: max. 50 ns BAS29 · , SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The , . 1 2 1 MARKING 3 TYPE NUMBER MARKING CODE(1) BAS29 BAS31 L21 or V1 BAS35


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 DIODE SMD A8 l21 smd code smd diode A8 BAS35 BAS29
2001 - smd diode marking code

Abstract: smd transistor k2 l21 smd code L21 SOT23 smd code marking sot23 BAS29 BAS31 BAS35
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , (double) diodes FEATURES BAS29 ; BAS31; BAS35 PINNING · Small plastic SMD package · Switching , reverse voltage: max. 110 V DESCRIPTION PIN BAS29 1 anode 2 3 BAS31 BAS35 anode , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The , outline. 2 n.c. c. BAS31 diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode. MAM233


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd diode marking code smd transistor k2 l21 smd code L21 SOT23 smd code marking sot23 BAS29 BAS31 BAS35
Not Available

Abstract: No abstract text available
Text: ■bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29 , BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode , Fig. 1 SOT-23. Dimensions in mm Marking code: BAS29 = L20 BAS31= L21 BAS35 = L22 0.150 3 MBB111 BAS29 3 MBBOS7 BAS31 TOP VIEW 3 M e e t 75 BAS35 March 1991


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PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29
1999 - BAS29

Abstract: BAS31 BAS35 l21 smd code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29 ; BAS31; BAS35 General , (double) diodes FEATURES BAS29 ; BAS31; BAS35 PINNING · Small plastic SMD package · Switching , reverse voltage: max. 110 V DESCRIPTION PIN BAS29 BAS31 BAS35 1 anode anode , technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a , . Simplified outline. 2 n.c. c. BAS31 diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 l21 smd code
Not Available

Abstract: No abstract text available
Text: BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i BAS29 JL 02 0.89" .60 .40 2.00 ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak , V 75 ns 90 V 600 mA 600 mA »1 BAS29 , BAS31, BAS35 Average rectified forward


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PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS29- BAS35 BAS29
BAS29

Abstract: BAS31 BAS35 l21 diode marking
Text:  BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking BAS29- L20 BAS31 - L21 BAS35 - L22 BAS29 w-H BAS31 2-H4 BAS35 M4-1 2.6 2.4 0.60 _ 0.4Q PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 _1.02 0.89* _2.00_ 1.60 0.14 0.09 5 R0.1 (.004)" 0.12 0.02 IK R0.05 (.002 , Irrm max. 600 mA COIL BAS29 , BAS31, BAS35 Average rectified forward current (averaged over any 20


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PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- BAS29 l21 diode marking
2001 - Not Available

Abstract: No abstract text available
Text: Marking BAS29– L20 BAS31 – L21 BAS35 – L22 2 BAS29 1 3 2 BAS31 1 3 2 , IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in , . 90 600 250 150 0.84 V mA mA °C V 75 ns 90 V 600 mA 600 mA Page 1 of 3 BAS29


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PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29â BAS31
Not Available

Abstract: No abstract text available
Text: °C 0,84 V 50 ns MECHANICAL DATA Fig, 1 SOT-23. Dimensions in mm Marking code: BAS29= , _ A_ BAS29 BAS31 BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29 , BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and the BAS35 has two diodes , BAS29 BAS31 BAS35 RATINGS (per diode) Limiting values in accorcance w ith the Absolute Maximum


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PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29
Not Available

Abstract: No abstract text available
Text: ) diodes_ FEATURES BAS29 ; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application DESCRIPTION PIN BAS29 BAS31 BAS35 1 , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The , . 3 b. BAS29 diode. c. BAS31 diode. 3 d. BAS35 diode. MAM233 MARKING TYPE NUMBER MARKING CODE BAS29 L20 BAS31 L21 BAS35 L22 1996 Sep 10 Fig.1 Simplified outline


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PDF BAS29; BAS31; BAS35 BAS29 BAS31 M8H32
AY MARKING 3-PIN

Abstract: No abstract text available
Text: ) diodes BAS29 ; BAS31 ; BAS35 PINNING FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application DESCRIPTION PIN BAS29 BAS31 BAS35 1 â , encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The , . c. BAS31 diode. b. BAS29 diode. d. BAS35 diode. MARKING TYPE NUMBER BAS29 MARKING , symbols. 2 Philips S em iconductors P roduct specification BAS29 ; BAS31; BAS35 General


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PDF BAS29; BAS31 BAS35 BAS29 BAS31; AY MARKING 3-PIN
Not Available

Abstract: No abstract text available
Text: Il BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking BAS2&- L20 BAS31 - L21 BAS35 - L22 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.46 0.14 0.70 0,50 1.4 1.2 w -H BAS29 2.6 2.4 Ô3B 3 L -+ 4 BAS31 (i BAS29 , BAS31, BAS35 Average rectified forward current (averaged


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PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS31
BAS29

Abstract: BAS31 BAS35
Text: Transys Electronics L I M I T E D SOT-23 BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29­ L20 BAS31 ­ L21 BAS35 ­ L22 2 BAS29 1 3 2 BAS31 1 3 2 BAS35 1 3 ABSOLUTE MAXIMUM RATINGS (per diode , 250 150 0.84 V mA mA °C V 75 ns 90 V 600 mA 600 mA BAS29 , BAS31, BAS35 Average


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PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31
BAS29

Abstract: l21 code SOT23 DIODE marking CODE AV L21 SOT23 bas35 Philips MBB BAS31
Text: PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29 , BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and , SOT-23. Dimensions in mm Marking code: BAS29 = L20 BAS31 = L21 BAS35 = L22 0.75 0.60 10° max I , MBB) 11 -NQ.2®|A[BI BAS29 1.4 2.5 1.2 max -0.1 TOP VIEW —H-$-|Q.I(M)|XJB1 3 MBBOS7 BAS31 3 MBB >7$ BAS35 March 1991 137 This Material Copyrighted By Its Respective Manufacturer BAS29 BAS31


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PDF bb53T3i BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29 l21 code SOT23 DIODE marking CODE AV L21 SOT23 Philips MBB
2009 - code a1 SMD

Abstract: smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29 ; BAS31; BAS35 General , ) diodes FEATURES BAS29 ; BAS31; BAS35 PINNING · Small plastic SMD package DESCRIPTION PIN · Switching speed: max. 50 ns BAS29 · General application BAS31 1 · Repetitive peak , technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single , (1) BAS29 BAS31 L21 or V1 BAS35 b. BAS29 diode. L20 or A8 L22 or V2 d. BAS35


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PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 code a1 SMD smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35
smd L21

Abstract: BAS29 BAS31 BAS35
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29­ L20 BAS31 ­ L21 BAS35 ­ L22 2 BAS29 1 3 2 BAS31 , Page 1 of 3 BAS29 , BAS31, BAS35 Average rectified forward current (averaged over any 20 ms


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PDF ISO/TS16949 OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21
L21 SMD

Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD smd diode marking t1 TP50S bas35 l21 diode marking
Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General , SMD Type KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) Electrical Characteristics Ta = 25 Parameter , Min L20 L21 L22 www.kexin.com.cn Diodes SMD Type KAS29/KAS31/KAS35 ( BAS29 /BAS31 , /KAS31/KAS35 ( BAS29 /BAS31/BAS35) f = 1 MHz; Tj = 25 ° C. (1) VR = 90 V; maximum values. (2) VR =


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PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD smd diode marking t1 TP50S bas35 l21 diode marking
Not Available

Abstract: No abstract text available
Text: 83633^4 DDDD718 7b4 ■BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 3 BAS29 2 -H 4 0.14 0.48 0.38 W -H « -ft 2.6 2.4 BAS31 _1.02 « -ft 0.60 , V mA mA °C V 75 ns 90 V 600 mA 600 mA ni 2 3Û 33 T 4 GGDD?!1 bTQ ■! BAS29


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PDF DDDD718 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29-
BAS29

Abstract: BAS31 BAS35 diode 7B4
Text: ■2303314 D00G716 7b4 ■BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking BAS29- L20 BAS31 - L21 BAS35 - L22 BAS29 W- BAS31 BAS35 2.6 2.4 0.60i 0.40 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 3 J' I 0.39 _2.00_ 1.80 .0.14 5 R0.1 (.004)" 0.12 , Copyrighted By Its Respective Manufacturer »IL 2353314 OOOtmR bTQ ■BAS29 , BAS31, BAS35 Average


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PDF D00G716 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- diode 7B4
Not Available

Abstract: No abstract text available
Text: Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 , 4008-318-123 1 of 4 Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) Electrical , 4008-318-123 2 of 4 Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) Typlcal , Product specification KAS29/KAS31/KAS35 ( BAS29 /BAS31/BAS35) f = 1 MHz; Tj = 25 ° C. (1) VR =


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PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29
2001 - BAS29

Abstract: BAS31 BAS35 smd L21
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29 , BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29­ L20 BAS31 ­ L21 BAS35 ­ L22 2 BAS29 1 3 2 BAS31 , Page 1 of 3 BAS29 , BAS31, BAS35 Average rectified forward current (averaged over any 20 ms


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PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21
2002 - Not Available

Abstract: No abstract text available
Text: BAS29 BAS29 Connection Diagram 3 3 3 L20 2 1 1 2 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction , BAS29 , Rev. A Fairchild Semiconductor


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PDF BAS29 OT-23 300us, BAS29,
2002 - 7121

Abstract: BAS29
Text: BAS29 BAS29 Connection Diagram 3 3 3 L20 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = , =300us, Duty Cycle=2% 2002 Fairchild Semiconductor Corporation BAS29 , Rev. A TRADEMARKS The following


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PDF BAS29 OT-23 7121 BAS29
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