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BAS16-02WE6327 INSTOCK
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Infineon Technologies AG
BAS1602WE6327 INSTOCK
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BAS16-02W datasheet (11)

Part Manufacturer Description Type PDF
BAS16-02W General Semiconductor Small-Signal Diode Original PDF
BAS16-02W Infineon Technologies DIODE SWITCHING DIODE 80V 0.2A 2SCD-80 Original PDF
BAS16-02W Infineon Technologies Silicon Switching Diode Original PDF
BAS16-02W Infineon Technologies Silicon Switching Diode for high-speed switching Original PDF
BAS16-02W Infineon Technologies High Speed Switching Diodes; Package: PG-SCD80-2; Configuration: Single; V<sub>R</sub> (max): 80.0 V; I<sub>F</sub> (max): 200.0 mA; I<sub>R</sub> (max): 100.0 nA; t<sub>rr</sub> (max): 4.0 ns; Original PDF
BAS16-02W Siemens Silicon Switching Diode Preliminary data (For high-speed switching applications) Original PDF
BAS16-02W Siemens Cross Reference Guide 1998 Original PDF
BAS16-02W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BAS16-02WE6327 Infineon Technologies Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SWITCHING 80V 0.2A SCD80-2 Original PDF
BAS1602WE6327 Infineon Technologies DIODE SWITCHING DIODE 80V 0.2A 2SCD-80 T/R Original PDF
BAS16-02WH6327 Infineon Technologies Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SWITCHING 80V 0.2A SCD80-2 Original PDF

BAS16-02W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - BAS16

Abstract: diode A6s BAS16-03W BAS16U BAS16-07L4 BAS1602W BAS16S BAS16-02V BAS16W SC79
Text: -02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 , 2 Type BAS16 BAS16-02L* BAS16-02V* BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W , -02V, BAS16-02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 BAS16 , -02V, BAS16-02W , TS 250 113 °C 250 BAS16W, TS 119 °C 250 BAS16-07L4, TS 250 tbd , -02V, BAS16-02W 260 80 120 BAS16-03W 135 BAS16U 150 BAS16W 125 BAS16-07L4 1For


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 BAS16 diode A6s BAS16-03W BAS16U BAS16-07L4 BAS1602W BAS16S BAS16-02V BAS16W SC79
2003 - diode A6s

Abstract: BAS16 BAS16-03W BAS1602W BAS16-02V marking a6 sot363 BAS16S BAS16U BAS16W SC79
Text: -02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 , 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W , BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 Surge forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ - 02W / -07L4 2.5 Total power dissipation 54 °C 370 BAS16-02L, -07L4, TS BAS16-02V, - 02W , TS


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 diode A6s BAS16 BAS16-03W BAS1602W BAS16-02V marking a6 sot363 BAS16S BAS16U BAS16W SC79
2003 - BAS16

Abstract: bas16 a6 BAS16/S/U/W BAS16-03W BAS1602W BAS16 transistor BAS16 SOT23 A6s sot23 a6s marking Puls
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! " # , BAS16 , BAS16S BAS16U BAS16W BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* SOT23 SOT363 SC74 , Forward current IF Unit V mA BAS16 250 BAS16-02L 200 BAS16-02V, BAS16-02W 200 , BAS16-02V, BAS16-02W , TS 120 °C BAS16-03W, TS 116 °C 250 BAS16S, TS 85 °C 250 BAS16U, TS , BAS16, BAS16S 260 BAS16-02L 80 BAS16-02V, BAS16-02W 120 BAS16-03W 135 BAS16U


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16-07L4 BAS16 bas16 a6 BAS16/S/U/W BAS16-03W BAS1602W BAS16 transistor BAS16 SOT23 A6s sot23 a6s marking Puls
2003 - BAS16

Abstract: BAS16-03W BAS1602W BAS16-02W BAS16-02V BAS16-02L BAS16S BAS16U BAS16W SC79
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 , , BAS16-02L/ -02V/ - 02W / -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, - 02W , TS 120 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS16-03W BAS1602W BAS16-02W BAS16-02V BAS16-02L BAS16S BAS16U BAS16W SC79
BAS16

Abstract: No abstract text available
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 Surge forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ - 02W , , TS ≤ 130 °C 250 BAS16-02V, - 02W , TS ≤ 120 °C 250 BAS16-03W, TS ≤ 116 °C BAS16S


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16
2003 - BAS16

Abstract: No abstract text available
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 , D 3 2 2 Type BAS16 BAS16-02L* BAS16-02V* BAS16-02W BAS16-03W BAS16-07L4* BAS16S , BAS16-02L 200 BAS16-02V, BAS16-02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 , BAS16-02V, BAS16-02W , TS BAS16W, TS 250 250 113 °C 250 119 °C 250 BAS16-07L4, TS , /W BAS16, BAS16S        BAS16-02L BAS16-02V, BAS16-02W 260 80 120


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 BAS16
2007 - BAS16

Abstract: bas16 a6 BAS16-03W BAS1602W BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U BAS16W
Text: compliant) package 1) · Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16 , -02L, -07L4 200 BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W , t = 1 µs, BAS16-02L/ -02V/ - 02W / -07L4 2.5 t=1s 0.5 Total power dissipation Ptot mW BAS16, T S 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, - 02W , TS 120 °C


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 bas16 a6 BAS16-03W BAS1602W BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U BAS16W
2003 - A6s DIODE

Abstract: BAS16
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 , D 3 2 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S , BAS16-02L, -07L4 200 BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 , , BAS16-02L/ -02V/ - 02W / -07L4 2.5 Total power dissipation 54 °C BAS16-02L, -07L4, TS BAS16-02V, - 02W , TS BAS16U, TS BAS16W, TS 130 °C 250 120 °C 250 116 °C 250 85 °C


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 A6s DIODE BAS16
2004 - BAS16-03W

Abstract: BAS16 BAS16U BAS16 infineon BAS1602W BAS16-02W BAS16-02V BAS16S BAS16W SC79
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 , , BAS16-02L/ -02V/ - 02W / -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, - 02W , TS 120 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16-03W BAS16 BAS16U BAS16 infineon BAS1602W BAS16-02W BAS16-02V BAS16S BAS16W SC79
2001 - BAS16-02W

Abstract: BAS1602W SCD80
Text: BAS16-02W Silicon Switching Diode For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS16-02W 3 1=C SCD80 2=A Maximum , 1 Aug-29-2001 BAS16-02W Electrical Characteristics at TA = 25°C, unless otherwise , 0.05, tr = 0.6ns, Ri = 50 Aug-29-2001 BAS16-02W Forward current IF = f (VF ) Reverse , 0 0 150 20 40 60 80 100 120 °C 150 TS 3 Aug-29-2001 BAS16-02W


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PDF BAS16-02W VES05991 SCD80 Aug-29-2001 EHB00025 BAS16-02W BAS1602W SCD80
2007 - BAS16

Abstract: No abstract text available
Text: compliant) package 1) • Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W , ,     Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W ! , -02L, -07L4 200 BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W , 4.5 t = 1 µs, BAS16-02L/ -02V/ - 02W / -07L4 2.5 t=1s 0.5 Total power dissipation , -02V, - 02W , TS ≤ 120 °C 250 BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C 250 BAS16U, TS â


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16-07L4 BAS16
2007 - MARKING CODE A6s

Abstract: BAS16 bas16 a6 A6S marking code BAS16U bas16 infineon top marking code BAS16-03W DIODE MARKING CODE LAYOUT G SOT23 marking code a6 BAS1602W
Text: compliant) package 1) · Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16 , 200 BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 , , BAS16-02L/ -02V/ - 02W / -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, T S 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, - 02W , TS 120 °C 250


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U MARKING CODE A6s BAS16 bas16 a6 A6S marking code BAS16U bas16 infineon top marking code BAS16-03W DIODE MARKING CODE LAYOUT G SOT23 marking code a6 BAS1602W
2005 - BAS16

Abstract: transistor marking NA 85 SOt323 marking code 6X DIODE MARKING CODE G SOT23 DIODE MARKING CODE LAYOUT G SOT23 a6s marking BAS16-02V BAS16-02L marking 38 marking 20 sot363
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W " # , BAS16 , current IF Value Unit V mA BAS16 250 BAS16-02L, -07L4 200 BAS16-02V, - 02W 200 , current IFSM A t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ - 02W / -07L4 , -02L, -07L4, TS 130 °C 250 BAS16-02V, - 02W , TS 120 °C 250 BAS16-03W, TS 116 °C BAS16S, TS 85


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 transistor marking NA 85 SOt323 marking code 6X DIODE MARKING CODE G SOT23 DIODE MARKING CODE LAYOUT G SOT23 a6s marking BAS16-02V BAS16-02L marking 38 marking 20 sot363
2005 - BAS16

Abstract: BAS1602W SC79 BAS16W BAS16U BAS16S BAS16-07L4 BAS16-03W BAS16-02W BAS16-02V
Text: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , BAS16-02V, - 02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 , , BAS16-02L/ -02V/ - 02W / -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, - 02W , TS 120 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W SC79 BAS16W BAS16U BAS16S BAS16-07L4 BAS16-03W BAS16-02W BAS16-02V
2N2907 SOT-23

Abstract: BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 2n2222 sot-23 BB409 BC517 "cross reference" 2N3563
Text: 1N4148 (2x) BAW78M SC-79 BAS78D 1N4001 (2x) SC-75 BAS16-02W BAS16-03W BAS16 BAL/BAR74 , -04 BAT18-05 BAT18-06 BAR5002V BAR65-03W BAR65- 02W 2000-09-01 BAR63-03W BAR63- 02W BAR63 BAR63 , -1 BA582 Data Book Leaded Devices SMD-Packages SOD-323 SCD-80 SOT-23 BAR64-03W BAR64- 02W , -04 BAT17-05 BAT17-06 BAT17-04W BAT17-05W BAT17-06W BAT16-046 BAT62-03W BAT62- 02W BAT62 BAT62-07W BAT64- 02W BAT64 BAT64-04 BAT64-05 BAT64-06 BAT64-07 BAT68 BAT68-04 BAT68-05 BAT68


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PDF OT-89 OT-223 1N4001 OD-323 SCD-80 OT-23 OT-143 OT-323 OT-343 OT-363 2N2907 SOT-23 BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 2n2222 sot-23 BB409 BC517 "cross reference" 2N3563
2009 - 2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: BAR50-02L BAR50-02V BAR63-02L BAR63-02V BAR63- 02W BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63 , Type List BBY51-02L BBY51- 02W BBY51-03W BBY52-02L BBY52- 02W BBY53-02L BBY53-02V BBY53- 02W BBY53-03W BBY53-05W BBY55-02V BBY55- 02W BBY55-03W BBY56- 02W BBY56-03W BBY57-02L BBY57-02V BBY57- 02W BBY57-05W BBY58-02L BBY58-02V BBY58- 02W BBY58-03W BBY58-05W BBY58-06W BBY59-02V BBY65-02V BBY66 , 20 0.35 NEW BAT62-02LS BAT62- 02W 40 20 0.35 BAT62-03W 40 20 0.35 BAT62-07L4 D 40 20 0.35


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PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
BAS316 equivalent

Abstract: Zener Diodes 300v BAS125 BAS16-03W BAS40 equivalent bav20 BAS316 / BAS16-03W bas16 cross reference 1SS376 1PS301
Text: DAN222 BAV70T BAS16-02W BAS316 DAN222 BAV70T BAS16-03W BAS32L DAP202K 1PS181


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PDF BAS125 BAT54 BAS70-06W BAS125-04 BAT54S BAS70-07 BAS125-04W BAT54SW BAT17 BAS316 equivalent Zener Diodes 300v BAS125 BAS16-03W BAS40 equivalent bav20 BAS316 / BAS16-03W bas16 cross reference 1SS376 1PS301
1998 - BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 1N4148 SOD-123 2N2907 SOT-23 2n2222 smd
Text: BA892 BAR65- 02W BAR63- 02W BAR64- 02W SOT-23 SMBT4126 SMBT5086 SMBT5087 BFN25 BCX41 BCV27 , -06 BAS125 BAS125-04 BAS125-05 BAS125-06 BAS45 BAS45 (2x) BAT62- 02W BAT64- 02W BAT165 BAT68 , BBY51- 02W BBY52- 02W BBY53- 02W BB689 BB857 BBY56- 02W BB664 BBY55- 02W BBY57- 02W BBY58- 02W SOT


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PDF OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 1N4148 SOD-123 2N2907 SOT-23 2n2222 smd
2005 - Not Available

Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52- 02W 1 2 Type BBY52-02L* BBY52- 02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS (nH) Marking 0.4 K 0.6 KK * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode , code Laser marking 0.35 0.2 ±0.05 Cathode marking 1 0.3 ±0.05 BAR63- 02W Cathode marking


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PDF BBY52. BBY52-02L BBY52-02W BBY52-02L* SCD80 Oct-24-2002
2005 - marking code INFINEON

Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation · For VCO's in mobile communications equipment BBY52-02L BBY52- 02W Type BBY52-02L BBY52- 02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS(nH) Marking 0.4 K 0.6 KK Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating , , July Type code Laser marking BAR63- 02W Cathode marking Example Standard Packing Reel ø180


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PDF BBY52. BBY52-02L BBY52-02W SCD80 marking code INFINEON
2007 - BBY52-02L

Abstract: BBY52 BAR63-02W BAS16-02L BBY52-02W SC75 SC79 SCD80 marking code INFINEON
Text: BBY52. Silicon Tuning Diodes · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation · For VCO's in mobile communications equipment · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BBY52-02L BBY52- 02W Type BBY52-02L BBY52- 02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS(nH) 0.4 0.6 Marking K KK , Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63- 02W Type code Cathode


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PDF BBY52. BBY52-02L BBY52-02W SCD80 BBY52-02L BBY52 BAR63-02W BAS16-02L BBY52-02W SC75 SC79 SCD80 marking code INFINEON
2007 - marking code INFINEON

Abstract: diode marking 180
Text: €¢ Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BBY57-02L BBY57-02V BBY57- 02W BBY57-05W !  ,  ,  Type BBY57-02L BBY57-02V BBY57- 02W BBY57-05W Package , Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63- 02W Type code Cathode


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PDF BBY57. BBY57-02L BBY57-02V BBY57-02W BBY57-05W SCD80 marking code INFINEON diode marking 180
2007 - marking code INFINEON

Abstract: sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 SCD80 SC79 *T4 MARKING BBY51-03W BBY51-02W BBY51-02L
Text: BBY51. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation · For VCO's in mobile communications equipment · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BBY51 BBY51-02L BBY51- 02W BBY51-03W ! , , Type BBY51 BBY51-02L BBY51- 02W BBY51-03W Package SOT23 TSLP-2-1 SCD80 SOD323 , Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63- 02W Type code Cathode


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PDF BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W SCD80 marking code INFINEON sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 SCD80 SC79 *T4 MARKING BBY51-03W BBY51-02W BBY51-02L
2005 - marking code INFINEON

Abstract: sod323 diode marking code AC marking code diode 14 BBY51-02L BBY51-02W BBY51 BCW66 SC79 SCD80 DIODE Q marking
Text: BBY51. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation · For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51- 02W BBY51-03W ! , , Type BBY51 BBY51-02L BBY51- 02W BBY51-03W Package SOT23 TSLP-2-1 SCD80 SOD323 Configuration common cathode single, leadless single single LS(nH) 2 0.4 0.6 , Date code 2003, July Type code BAR63- 02W Laser marking Cathode marking Example


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PDF BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W SCD80 marking code INFINEON sod323 diode marking code AC marking code diode 14 BBY51-02L BBY51-02W BBY51 BCW66 SC79 SCD80 DIODE Q marking
2007 - diode marking code 7

Abstract: marking code INFINEON DIODE T4 marking INFINEON date code marking marking G SOT323 Transistor DIODE T4 T3 marking BBY57-02V marking ag diode AEC marking DIODE T4 marking 3 TERMINAL
Text: compliant) package 1) · Qualified according AEC Q101 BBY57-02L BBY57-02V BBY57- 02W BBY57-05W ! , , Type BBY57-02L BBY57-02V BBY57- 02W BBY57-05W Package TSLP-2 SC79 SCD80 SOT323 , 0.35 1.45 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63- 02W


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PDF BBY57. BBY57-02L BBY57-02V BBY57-02W BBY57-05W SCD80 diode marking code 7 marking code INFINEON DIODE T4 marking INFINEON date code marking marking G SOT323 Transistor DIODE T4 T3 marking BBY57-02V marking ag diode AEC marking DIODE T4 marking 3 TERMINAL
Supplyframe Tracking Pixel