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Infineon Technologies AG
BAS 16-02L E6327 Diode Switching 85V 0.2A 2-Pin TSLP T/R (Alt: SP000013548)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (2) BAS 16-02L E6327 Tape and Reel 0 52 Weeks, 2 Days 15,000 - - - - - Buy Now
BAS 16-02L E6327 Tape and Reel 0 70 Weeks, 2 Days 15,000 - - - - - Buy Now
Infineon Technologies AG
BAS 16-02L E6327XT Diode Switching 85V 0.2A 2-Pin TSLP T/R - Tape and Reel (Alt: BAS1602LE6327XTMA1)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet BAS 16-02L E6327XT Reel 0 45,000 - - - - - Buy Now

BAS16-02L/ datasheet (5)

Part Manufacturer Description Type PDF
BAS16-02L Infineon Technologies Silicon Switching Diode Original PDF
BAS16-02L Infineon Technologies Silicon Switching Diode Original PDF
BAS16-02L Infineon Technologies High Speed Switching Diodes; Package: PG-TSLP-2; Configuration: Single; V<sub>R</sub> (max): 80.0 V; I<sub>F</sub> (max): 200.0 mA; I<sub>R</sub> (max): 100.0 nA; t<sub>rr</sub> (max): 4.0 ns; Original PDF
BAS16-02LE6327 Infineon Technologies Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SWITCHING 80V 0.2A 2TSLP Original PDF
BAS16-02LE6327 Infineon Technologies DIODE SWITCHING DIODE 80V 0.2A 2TSLP-2 T/R Original PDF

BAS16-02L/ Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - A6s DIODE

Abstract: BAS16
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 , D 3 2 2 Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S , BAS16- 02L , -07L4 200 BAS16-02V, -02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 , , BAS16- 02L / -02V/ -02W/ -07L4 2.5 Total power dissipation 54 °C BAS16- 02L , -07L4, TS BAS16 , 1For -65 . 150       BAS16- 02L , -07L4 °C 125 calculation of RthJA


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 A6s DIODE BAS16
2003 - BAS16

Abstract: bas16 a6 BAS16/S/U/W BAS16-03W BAS1602W BAS16 transistor BAS16 SOT23 A6s sot23 a6s marking Puls
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! " # , BAS16 , BAS16S BAS16U BAS16W BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* SOT23 SOT363 SC74 , Forward current IF Unit V mA BAS16 250 BAS16- 02L 200 BAS16-02V, BAS16-02W 200 , forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16- 02L , TS 130 °C


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16-07L4 BAS16 bas16 a6 BAS16/S/U/W BAS16-03W BAS1602W BAS16 transistor BAS16 SOT23 A6s sot23 a6s marking Puls
2003 - BAS16

Abstract: No abstract text available
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 , D 3 2 2 Type BAS16 BAS16- 02L * BAS16-02V* BAS16-02W BAS16-03W BAS16-07L4* BAS16S , BAS16- 02L 200 BAS16-02V, BAS16-02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 , 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 Total power dissipation 370 54 °C , -03W, TS 250 130 °C  BAS16- 02L , TS   BAS16, TS mW Ptot 250 tbd


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 BAS16
2003 - diode A6s

Abstract: BAS16 BAS16-03W BAS1602W BAS16-02V marking a6 sot363 BAS16S BAS16U BAS16W SC79
Text: BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16- 02L , 2 Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W , voltage VRM 85 Forward current IF Unit V mA BAS16 250 BAS16- 02L , -07L4 200 , forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 Total power dissipation 54 °C 370 BAS16- 02L , -07L4, TS BAS16-02V, -02W, TS


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 diode A6s BAS16 BAS16-03W BAS1602W BAS16-02V marking a6 sot363 BAS16S BAS16U BAS16W SC79
2003 - BAS16

Abstract: BAS16-03W BAS1602W BAS16-02W BAS16-02V BAS16-02L BAS16S BAS16U BAS16W SC79
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16 , 85 Forward current IF Value Unit V mA BAS16 250 BAS16- 02L , -07L4 200 , , BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16- 02L , -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS16-03W BAS1602W BAS16-02W BAS16-02V BAS16-02L BAS16S BAS16U BAS16W SC79
BAS16

Abstract: No abstract text available
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16 , voltage VRM 85 Forward current IF Unit V mA BAS16 250 BAS16- 02L , -07L4 200 , forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 Total power dissipation mW Ptot BAS16, TS ≤ 54 °C 370 BAS16- 02L , -07L4


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16
2003 - BAS16

Abstract: diode A6s BAS16-03W BAS16U BAS16-07L4 BAS1602W BAS16S BAS16-02V BAS16W SC79
Text: BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16- 02L , 2 Type BAS16 BAS16- 02L * BAS16-02V* BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W , 85 Forward current IF Value Unit V mA BAS16 250 BAS16- 02L 200 BAS16 , -07L4 200 Surge forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 Total power dissipation 370 54 °C BAS16- 02L , TS BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U SCD80 BAS16 diode A6s BAS16-03W BAS16U BAS16-07L4 BAS1602W BAS16S BAS16-02V BAS16W SC79
2007 - BAS16

Abstract: bas16 a6 BAS16-03W BAS1602W BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U BAS16W
Text: compliant) package 1) · Qualified according AEC Q101 BAS16 BAS16W BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16 , reverse voltage VRM 85 Forward current IF Value Unit V mA BAS16 250 BAS16- 02L , t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation Ptot mW BAS16, T S 54 °C 370 BAS16- 02L , -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 bas16 a6 BAS16-03W BAS1602W BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U BAS16W
2004 - BAS16-03W

Abstract: BAS16 BAS16U BAS16 infineon BAS1602W BAS16-02W BAS16-02V BAS16S BAS16W SC79
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16 , 85 Forward current IF Value Unit V mA BAS16 250 BAS16- 02L , -07L4 200 , , BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16- 02L , -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16-03W BAS16 BAS16U BAS16 infineon BAS1602W BAS16-02W BAS16-02V BAS16S BAS16W SC79
2001 - BAS16

Abstract: BAS16-02L
Text: BAS16- 02L Silicon Switching Diode Preliminary data For high-speed switching application 2 1 Type BAS16- 02L Maximum Ratings Parameter Diode reverse voltage Peak reverse voltageForward current Surge forward current Total power dissipation TS = tbd Junction temperature Storage temperature Thermal , Note Thermal Resistance 1 Aug-29-2001 BAS16- 02L Electrical Characteristics at TA = 25 , Aug-29-2001 BAS16- 02L Reverse current IR = (TA ) VR = Parameter BAS 16 EHB00022 Forward


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PDF BAS16-02L Aug-29-2001 100ns, EHN00017 EHB00022 EHB00025 BAS16 BAS16-02L
2007 - BAS16

Abstract: No abstract text available
Text: compliant) package 1) • Qualified according AEC Q101 BAS16 BAS16W BAS16- 02L BAS16-02V BAS16 , ,     Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W ! , Peak reverse voltage VRM 85 Forward current IF Unit V mA BAS16 250 BAS16- 02L , 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation Ptot mW BAS16, T S ≤ 54 °C 370 BAS16- 02L , -07L4, TS ≤ 130 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16-07L4 BAS16
2007 - MARKING CODE A6s

Abstract: BAS16 bas16 a6 A6S marking code BAS16U bas16 infineon top marking code BAS16-03W DIODE MARKING CODE LAYOUT G SOT23 marking code a6 BAS1602W
Text: compliant) package 1) · Qualified according AEC Q101 BAS16 BAS16W BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16 , voltage VRM 85 Forward current IF Value Unit V mA BAS16 250 BAS16- 02L , -07L4 , , BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, T S 54 °C 370 BAS16- 02L , -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U MARKING CODE A6s BAS16 bas16 a6 A6S marking code BAS16U bas16 infineon top marking code BAS16-03W DIODE MARKING CODE LAYOUT G SOT23 marking code a6 BAS1602W
2005 - BAS16

Abstract: transistor marking NA 85 SOt323 marking code 6X DIODE MARKING CODE G SOT23 DIODE MARKING CODE LAYOUT G SOT23 a6s marking BAS16-02V BAS16-02L marking 38 marking 20 sot363
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16- 02L , current IF Value Unit V mA BAS16 250 BAS16- 02L , -07L4 200 BAS16-02V, -02W 200 , current IFSM A t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16- 02L , BAS16, BAS16S 260 BAS16- 02L , -07L4 80 BAS16-02V, -02W 120 BAS16-03W 135


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 transistor marking NA 85 SOt323 marking code 6X DIODE MARKING CODE G SOT23 DIODE MARKING CODE LAYOUT G SOT23 a6s marking BAS16-02V BAS16-02L marking 38 marking 20 sot363
2005 - BAS16

Abstract: BAS1602W SC79 BAS16W BAS16U BAS16S BAS16-07L4 BAS16-03W BAS16-02W BAS16-02V
Text: BAS16- 02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16- 02L * BAS16-02V BAS16-02W BAS16-03W BAS16 , 85 Forward current IF Value Unit V mA BAS16 250 BAS16- 02L , -07L4 200 , , BAS16- 02L / -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16- 02L , -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250 BAS16


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PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W SC79 BAS16W BAS16U BAS16S BAS16-07L4 BAS16-03W BAS16-02W BAS16-02V
2005 - Not Available

Abstract: No abstract text available
Text: . 0.8 @ IF = 10mA) · Very low signal distortion BAR89- 02L BAR89-02LRH 1 2 Type BAR89- 02L , Parameter Diode reverse voltage Forward current Total power dissipation BAR89- 02L , BAR89-02LRH, T s 133 , - soldering point1) BAR89- 02L , BAR89-02LRH, 1For Symbol VR IF Ptot Tj Top Tstg Symbol RthJS , IF = (T S) BAR89- 02L , BAR89-02LRH 120 mA mA Permissible Puls Load R thJS = (tp) BAR89- 02L , ) BAR89- 02L , BAR89-02LRH 10 2 Insertion loss |S21|2 = (f) IF = Parameter BAR89- 02L in series


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PDF BAR89. BAR89-02L BAR89-02LRH BAR89-02LRH* BAR89-02L, BAR89-02LRH,
2005 - BAR65

Abstract: No abstract text available
Text: (typ. 0.5 pF @ 0V) · Fast switching applications BAR65- 02L BAR65-02V BAR65-03W Type BAR65- 02L , otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR65- 02L , TS , 1) BAR65- 02L BAR65-02V BAR65-03W Symbol RthJS 90 130 145 Value Unit K/W Electrical , -27-2005 BAR65. Forward current IF = (T S) BAR65- 02L Forward current IF = (T S) BAR65-02V 120 mA 120 , 5 Jan-27-2005 BAR65. Permissible Puls Load RthJS = (tp) BAR65- 02L 10 2 Permissible


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PDF BAR65. BAR65-02L BAR65-02V BAR65-03W BAR65-02L OD323 BAR65-02L, BAR65-02V, BAR65
2007 - Not Available

Abstract: No abstract text available
Text: (typ. 0.5 pF @ 0V) · Fast switching applications BAR65- 02L BAR65-02V BAR65-03W Type BAR65- 02L , otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR65- 02L , TS , ) BAR65- 02L BAR65-02V BAR65-03W Symbol RthJS 90 130 145 Value Unit K/W Electrical , 2007-02-23 BAR65. Forward current IF = (T S) BAR65- 02L 120 mA Forward current IF = (T S) BAR65 , 150 TS 5 2007-02-23 BAR65. Permissible Puls Load RthJS = (tp) BAR65- 02L 10 2


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PDF BAR65. BAR65-02L BAR65-02V BAR65-03W BAR65-02L OD323 BAR65-02L, BAR65-02V,
2007 - Not Available

Abstract: No abstract text available
Text: Q101 BAR50- 02L BAR50-02V Type BAR50- 02L BAR50-02V Package TSLP-2-1 SC79 Configuration , otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR50- 02L , TS , Resistance Parameter Junction - soldering point 1) BAR50- 02L BAR50-02V Symbol RthJS Value 80 120 , = 100 MHz VR = 0 V, f = 1.1.8 GHz, BAR50- 02L VR = 0 V, f = 1.1.8 GHz, all other Reverse parallel , current IF = (T S) BAR50- 02L Forward current IF = (T S) BAR50-02V 120 mA 120 mA 100 90 80


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PDF BAR50. BAR50-02L BAR50-02V BAR50-02L, BAR50-02V,
2005 - 2005 Z

Abstract: SC79 BAS16-02L BAR65-03W BAR65-02V BAR65-02L BAR65 BAR63-03W BAR63-02V SCD80
Text: capacitance (typ. 0.5 pF @ 0V) · Fast switching applications BAR65- 02L BAR65-02V BAR65-03W Type BAR65- 02L * BAR65-02V BAR65-03W Package TSLP-2-1 SC79 SOD323 Configuration single, leadless , BAR65- 02L , TS 128°C 250 BAR65-02V, TS 118°C 250 BAR65-03W, TS 113°C 250 150 , Junction - soldering point 1) RthJS Value Unit K/W BAR65- 02L 90 BAR65-02V 130 , 2005-10-19 BAR65. Forward current IF = (T S) Forward current IF = (T S) BAR65- 02L BAR65


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PDF BAR65. BAR65-02L BAR65-02V BAR65-03W OD323 BAR65-02L, 2005 Z SC79 BAS16-02L BAR65-03W BAR65-02V BAR65-02L BAR65 BAR63-03W BAR63-02V SCD80
2005 - 02L MARKING CODE

Abstract: No abstract text available
Text: forward resitance · Very low harmonics BAR50- 02L BAR50-02V 1 2 Type BAR50- 02L BAR50 , power dissipation BAR50- 02L , TS 130°C BAR50-02V, TS 120°C Junction temperature Operating temperature , point 1) BAR50- 02L BAR50-02V Symbol RthJS 80 120 Value Unit K/W Electrical Characteristics , capacitance VR = 1 V, f = 1 MHz VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1.1.8 GHz, BAR50- 02L , VF 4 2005-05-17 BAR50. Forward current IF = (T S) BAR50- 02L 120 mA Forward current


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PDF BAR50. BAR50-02L BAR50-02V BAR50-02L, BAR50-02V, 02L MARKING CODE
2005 - Not Available

Abstract: No abstract text available
Text: forward resitance · Very low harmonics BAR50- 02L BAR50-02V Type BAR50- 02L BAR50-02V Package , dissipation BAR50- 02L , TS 130°C BAR50-02V, TS 120°C Junction temperature Operating temperature range Storage , 1 2005-10-19 BAR50. Thermal Resistance Parameter Junction - soldering point 1) BAR50- 02L , MHz VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1.1.8 GHz, BAR50- 02L VR = 0 V, f = , VF 4 2005-10-19 BAR50. Forward current IF = (T S) BAR50- 02L Forward current IF = (T S


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PDF BAR50. BAR50-02L BAR50-02V BAR50-02L, BAR50-02V,
2007 - Not Available

Abstract: No abstract text available
Text: forward resitance · Very low harmonics BAR50- 02L BAR50-02V Type BAR50- 02L BAR50-02V Package , dissipation BAR50- 02L , TS 130°C BAR50-02V, TS 120°C Junction temperature Operating temperature range Storage , 1 2007-02-23 BAR50. Thermal Resistance Parameter Junction - soldering point 1) BAR50- 02L , MHz VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1.1.8 GHz, BAR50- 02L VR = 0 V, f = , BAR50. Forward current IF = (T S) BAR50- 02L 120 mA Forward current IF = (T S) BAR50-02V 120


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PDF BAR50. BAR50-02L BAR50-02V BAR50-02L, BAR50-02V,
2007 - BBY52-02L

Abstract: BBY52 BAR63-02W BAS16-02L BBY52-02W SC75 SC79 SCD80 marking code INFINEON
Text: BBY52. Silicon Tuning Diodes · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation · For VCO's in mobile communications equipment · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BBY52- 02L BBY52-02W Type BBY52- 02L BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS(nH) 0.4 0.6 Marking K KK , Stencil apertures Marking Layout (Example) BAS16- 02L Type code Cathode marking Laser marking


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PDF BBY52. BBY52-02L BBY52-02W SCD80 BBY52-02L BBY52 BAR63-02W BAS16-02L BBY52-02W SC75 SC79 SCD80 marking code INFINEON
2005 - BBY57-02W

Abstract: BBY57-05W E6327
Text: communications equipment For control elements such as TCXOs and VCXOs BBY57- 02L BBY57-02V BBY57-02W BBY57-05W 3 1 2 D 1 D 2 1 2 Type BBY57- 02L * BBY57-02V BBY57-02W BBY57-05W Package TSLP , V, f = 470 MHz, BBY57- 02L VR = 1 V, f = 470 MHz, all others 0.35 0.3 - 2 Mar , BAS16- 02L Laser marking Cathode marking Example Packing Code E6327: Reel ø180 mm = 15.000


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PDF BBY57. BBY57-02L BBY57-02V BBY57-02W BBY57-05W BBY57-02L* BBY57-02W SCD80 BBY57-05W E6327
2005 - Not Available

Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52- 02L BBY52-02W 1 2 Type BBY52- 02L * BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS (nH) Marking 0.4 K 0.6 KK * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode , 0.925 0.3 1 Stencil apertures Marking Layout Type code BAS16- 02L Laser marking


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PDF BBY52. BBY52-02L BBY52-02W BBY52-02L* SCD80 Oct-24-2002
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