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IBAR6-6D Tripp Lite SURGE SUPPRSSR 6OUT 6'CORD
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BAR 66 E6327 Infineon Technologies AG Avnet - $0.07 $0.06
BAR 66 E6327 Infineon Technologies AG Avnet - €0.11 €0.06
BAR 66 E6327 Infineon Technologies AG Chip1Stop 1,420 $0.23 $0.08
BAR66E6327 Infineon Technologies AG ComS.I.T. 4,285 - -
BAR66E6327HTSA1 Infineon Technologies AG element14 Asia-Pacific - $0.53 $0.19
BAR66E6327HTSA1 Infineon Technologies AG Avnet - $0.08 $0.07
BAR66E6327HTSA1 Infineon Technologies AG Newark element14 90 $0.37 $0.09
BAR66E6327HTSA1 Infineon Technologies AG element14 Asia-Pacific 90 $0.53 $0.19
BAR66E6327HTSA1 Infineon Technologies AG RS Components 2,750 £0.10 £0.08
BAR66E6327HTSA1 Infineon Technologies AG Chip1Stop 7,545 $0.07 $0.07
BAR66E6327HTSA1 Infineon Technologies AG Avnet 30,000 €0.12 €0.06
BAR66E6327HTSA1 Infineon Technologies AG Chip1Stop 7,545 $0.24 $0.11
BAR66E6327HTSA1 Infineon Technologies AG Chip1Stop 7,545 $0.12 $0.07
BAR66E6327HTSA1 Infineon Technologies AG Farnell element14 220 £0.24 £0.07
BAR66E6433 Infineon Technologies AG Avnet - - -
IBAR6-6D Tripp Lite Avnet - - -
IBAR6-6D Tripp Lite Chip1Stop 12 $57.65 $53.60
IBAR6-6D Tripp Lite Allied Electronics & Automation 37 $68.64 $60.32

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BAR66 datasheet (11)

Part Manufacturer Description Type PDF
BAR66 Infineon Technologies PIN Diode array Surge protection device Original PDF
BAR66 Infineon Technologies Silicon PIN Diode Array Original PDF
BAR66 Infineon Technologies RF Antenna ESD Protection; Package: PG-SOT23-3; V<sub>ESD</sub>(min)(IEC61000-4-2 contact): 25.0 kV; V<sub>RWM</sub>: 150.0 V; Ct, Cl @ 0V: 0.7 pF; I<sub>R</sub> (typ): 20.0 nA; Ipp @ tp=8/20 us: 12.0 A Original PDF
BAR66 Kexin Silicon PIN Diode Original PDF
BAR66 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BAR66 Siemens Silicon PIN Diode Array (Surge protection device Two PIN diodes, series configuration) Original PDF
BAR66 TY Semiconductor Silicon PIN Diode - SOT-23 Original PDF
BAR66 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BAR66E6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE ARRAY OVP 150V 200MA SOT23 Original PDF
BAR66E6327 Infineon Technologies DIODE PIN SWITCH 150V 3SOT-23 Original PDF
BAR66E6433 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN ARRAY 150V 200MA SOT23 Original PDF

BAR66 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: SIEMENS BAR66 Silicon PIN Diode Array • • • Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code (taped) Pin Configuration 1 2 A1 Q62702-A1473 , Vh BAR66 150 Unit Forward current Forward current (tp=1nS) If 200 mA If 20 , Semiconductor Group 1998-11-01 210 ' ■flE 3 5 b 0 5 01 502 43 3 lab ■BAR66


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PDF BAR66 Q62702-A1473 OT-23 012Q244
2004 - BAR66

Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Note Thermal Resistance 1 Aug-25-2004 BAR66. Electrical Characteristics at TA = 25 , (BR) IR VF 150 - 2 Aug-25-2004 BAR66. Diode capacitance CT = (VR) f = Parameter 0.8 , Aug-25-2004 BAR66. Permissible Puls Load RthJS = (tp) BAR66 10 K/W 3 Permissible Pulse


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PDF BAR66. BAR66 Aug-25-2004 BAR66
2007 - GP 005 DIODE

Abstract: BAR66 BCW66 marking PMs
Text: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage , Resistance 4For 1 2007-04-19 BAR66. Electrical Characteristics at TA = 25°C, unless , 1 and pin 2 are connected 2I 2 2007-04-19 BAR66. Diode capacitance CT = (VR) f = , 60 80 100 120 °C 150 TS 3 2007-04-19 BAR66. Permissible Puls Load RthJS = , s 10 0 tP 4 2007-04-19 Package SOT23 BAR66. 0.4 +0.1 -0.05 1) 2


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PDF BAR66. BAR66 GP 005 DIODE BAR66 BCW66 marking PMs
2004 - Not Available

Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Note Thermal Resistance 1 Aug-25-2004 BAR66. Electrical Characteristics at TA = 25 , (BR) IR VF 150 - 2 Aug-25-2004 BAR66. Diode capacitance CT = (VR) f = Parameter 0.8 , Aug-25-2004 BAR66. Permissible Puls Load RthJS = (tp) BAR66 10 K/W 3 Permissible Pulse


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PDF BAR66. BAR66
2003 - BAR66

Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Parameter Feb-04-2003 BAR66. Electrical Characteristics at TA = 25°C, unless otherwise specified , mA, rr RL = 100 Charge carrier life time 2 Feb-04-2003 BAR66. Forward , °C 150 TS VF 3 Feb-04-2003 BAR66. (tp ) Permissible Pulse Load IFmax / IFDC


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PDF BAR66. BAR66 Feb-04-2003 BAR66
2001 - BAR66

Abstract: No abstract text available
Text: BAR66 Silicon PIN Diode Array 3 Surge protection device Two PIN diodes, series , 3 1 2 EHA07005 Type Marking BAR66 PMs Pin Configuration 1 = A1 2 = C2 , calculation of RthJA please refer to Application Note Thermal Resistance 1 Aug-24-2001 BAR66 , = 6 mA, IR = 3 mA Series inductance 2 Aug-24-2001 BAR66 Diode capacitance CT = f (VR , 10 -2 0.5 0.6 0.7 0.8 0.9 1 V 1.2 VF 3 Aug-24-2001 BAR66


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PDF BAR66 VPS05161 EHA07005 Aug-24-2001 BAR66
2005 - BAR66

Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Note Thermal Resistance 1 Aug-25-2004 BAR66. Electrical Characteristics at TA = 25 , (BR) IR VF 150 - 2 Aug-25-2004 BAR66. Diode capacitance CT = (VR) f = Parameter 0.8 , Aug-25-2004 BAR66. Permissible Puls Load RthJS = (tp) BAR66 10 K/W 3 Permissible Pulse


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PDF BAR66. BAR66 BAR66
2009 - 2I k

Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage , 3For 1 2011-06-27 BAR66. Electrical Characteristics at TA = 25°C, unless otherwise , according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected 2 2011-06-27 BAR66. , 40 60 80 100 120 °C 150 VF TS 3 2011-06-27 BAR66. Permissible Puls , 4 2011-06-27 Package SOT23 BAR66. Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3


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PDF BAR66. BAR66 2I k
1997 - BAR66

Abstract: Q62702-A1473
Text: BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code (taped) Pin Configuration 1 2 A1 C2 Q62702-A1473 Package 3 C1/A2 , temperature range Storage temperature range BAR66 Unit 150 V 200 mA 20 A 250 mW , , 05.05.94 BAR66 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter


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PDF BAR66 Q62702-A1473 OT-23 BAR66 Q62702-A1473
marking PM

Abstract: No abstract text available
Text: S IE M E N S Silicon PIN Diode Array · · · Surge protection device Tw o PIN diodes, series configuration D esigned for surge overvoltage clamping in antiparallel connection BAR66 Type BAR66 Marking PM s Ordering Code (taped) Q 62702-A1473 Pin Configuration 1 2 A1 C2 Package 3 C1/A2 SO T , dissipation T S < 25°C 1) Operating temperature range Storage temperature range Symbol Vr BAR66 150 200 20 250 , Vf 0.95 1.2 BAR66 Value typ. max. Unit V V pF 0.4 0.35 0.6 Or n . 12 1.5 _


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PDF BAR66 62702-A1473 BAR66 marking PM
2007 - ESD5V0S1U-03W

Abstract: BAR66 ESD8V0L2B-03L Transient Voltage Suppressor SOD323 d480
Text: ESD-Protection BAR66 n.a. 0.8 1 > 15 6 V @ I PP = 8 A (8/20 µs) 12 SOT23 1 2 , ESD8V0L2B-03L GND BAR66 VCC Surge protection PIN diode Ultra low capacitance High IP3 Surge , VCC D+ 480 Mbit/s USB 2.0 Device DGND 2 x BAR66 Naming System for TVS Diodes ESD


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PDF IEC61000-4-2 ESD5V0S1U-03W B132-H8660-X-0-7600 BAR66 ESD8V0L2B-03L Transient Voltage Suppressor SOD323 d480
marking PMs

Abstract: smd rf transistor marking BAR66
Text: Diodes SMD Type Silicon PIN Diode Array BAR66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Two PIN diodes, series configuration 0.55 Surge protection device +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Designed for surge overvoltage clamping in antiparallel connection 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol


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PDF BAR66 OT-23 marking PMs smd rf transistor marking BAR66
Not Available

Abstract: No abstract text available
Text: Product specification BAR66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Two PIN diodes, series configuration 0.55 Surge protection device +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Designed for surge overvoltage clamping in antiparallel connection 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue R everse


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PDF BAR66 OT-23 250ina
BAR64-03W

Abstract: BA585
Text: -07 (Dual) BAR65-03W BAR66 (Dual) BAR80 BAT 18 BAT 18-04 (Dual) BAT 18-05 (Dual) BAT 18-06 (Dual) ^R


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PDF BA582 BA585 BA586 BA592 BA595 BA596 BA885 BA886 BAR14-1 BAR60 BAR64-03W
BB409

Abstract: BA389 d bb833 PACKAGE OUTLINES sod bb609
Text: SIEMENS AKTIEN6ESELLSCHAF bOE D fl23SbDS D G 4 S 4 n 3G5 « S I E Ê Microwave, RF & Tuner Diodes T 07-01 - PIN (General Purpose, Switching) Diodes IType Maximum Ratings VR V BA582 BA585 BA586 BA592 BA595 BA885 BA886 BAR 14-1 (Dual) BAR15-1 (Dual) BAR 16-1 (Dual) BAR17 BAR60 (Triple) BAR61 (Triple) BAR63-03 BAR64 BAR66 (Dual) BAT18 BAT 18-04 (Dual) BAT18-05(Dual) BAT 18-06 (Dual) 35 50 50 35 50 50 50 100 100 100 100 100 100 150 200 150 35 35 35 35 For complete package outlines


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PDF fl23SbDS BA582 BA585 BA586 BA592 BA595 BA885 BA886 BAR15-1 BAR17 BB409 BA389 d bb833 PACKAGE OUTLINES sod bb609
1999 - BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Text: 80 Ba597 IP3 [dBm] Ba595 Bar64 Bar66 60 Bar14 40 0.1 1 10 I / (r -R , Bias IF = 2 mA IF = 10 mA BA592 BAR63-03W BAR65-03W BA595 BA597 BA885 BAR14 BAR66 BAR64


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PDF
2010 - XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf smd marking D3 SOT363 XM0860SH smd code marking NEC rf transistor MGA51563
Text: -05W BAR64-06 BAR64-06W BAR64-07 BAR65-02V BAR65-03W BAR66 BAR67-02V BAR67-04 BAR81W NEW BAR86 , ] IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 (contact) (5/50ns) (8/20µs) BAR66 D 150 25 12 ESD1P0RFS DD


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PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf smd marking D3 SOT363 XM0860SH smd code marking NEC rf transistor MGA51563
BAR54

Abstract: bar55 bar62 K2809 1000v 3a diode 113 sw1 spdt DIODE S2F r27-200 600-count Cyrustek
Text: S1B BP2 bar37 S34 S31 S29 S32 S30 S33 S27 S28 bar61 bar62 bar65 bar66


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PDF ES51964 6600counts) RS232 30min/15min) 00kHz RS232 SEG34 SEG33 SEG32 SEG31 BAR54 bar55 bar62 K2809 1000v 3a diode 113 sw1 spdt DIODE S2F r27-200 600-count Cyrustek
BAR54

Abstract: r27-200 ZR 500k resistor LPc3 bar55 6600A
Text: AUTO MANU ZERO REL PMAX PMIN BP4 bar61 bar62 bar65 bar66 10 S03 S04 20 30 S05


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PDF ES51965 6600counts) RS232 30min/15min) RS232 SEG35 SEG34 SEG33 SEG32 SEG31 BAR54 r27-200 ZR 500k resistor LPc3 bar55 6600A
1968 - 2SK508

Abstract: TEA5767 IRF power mosfets catalog 2SK147BL 2SK163 Funkamateur bfr53 2SK43 2SK162-K 2SK425
Text: No file text available


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PDF BB202 BGA6589 com/catalog/219/282/27046/index 31-24-3536195ronald 2SK508 TEA5767 IRF power mosfets catalog 2SK147BL 2SK163 Funkamateur bfr53 2SK43 2SK162-K 2SK425
2011 - BGT24MTR11

Abstract: AZ1045-04F 24GHz Radar BGA628L7 BAR86-02LRH ALPHA&OMEGA DATE CODE BFR181W SMV1705 marking code onsemi Diode 2SC4586
Text: -02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR65-02V BAR65-03W BAR66


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PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F 24GHz Radar BGA628L7 BAR86-02LRH ALPHA&OMEGA DATE CODE BFR181W SMV1705 marking code onsemi Diode 2SC4586
BAR54

Abstract: BAR50 ES51968 bar55 cshlpc1 SINGLE CHIP DIGITAL MULTIMETER digital multimeter diagram r27-200 BAR42 16 LF 660A
Text: m1 F bar57 bar58 bar61 bar62 bar65 bar66 S33 S34 S35 S4A AUTO


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PDF ES51968 6600counts) RS232 30min/15min) RS232 SEG35 SEG34 SEG33 SEG32 SEG31 BAR54 BAR50 bar55 cshlpc1 SINGLE CHIP DIGITAL MULTIMETER digital multimeter diagram r27-200 BAR42 16 LF 660A
2012 - Not Available

Abstract: No abstract text available
Text: bar65 bar66 S33 S34 S35 K2 Hz2 AUTO INRUSH MAX MANU S27 S28 S25 S26 S24 MAX


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PDF ES51968 6600counts) 00kHz 600nF 00MHz 10kHz) RS232 SEG35 SEG34 SEG33
2012 - 1/929 rev oh s26

Abstract: No abstract text available
Text: bar62 bar65 bar66 K2 Hz2 S25 S26 S24 MAX MIN HOLD AUTO MANU ZERO REL % K2 Hz2 BP1


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PDF ES51964 6600counts) 00kHz 600nF 00MHz 10kHz) cl113 RS232 SEG34 SEG33 1/929 rev oh s26
2009 - 2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: -06 BAR64-06W BAR64-07 BAR65-02L BAR65-02V BAR65-03W BAR66 BAR67-02V NEW BAR67-04 BAR81W BAR88 , types) 2 rf Cross Reference 10 1 10 P2 (BAR63x) P3 (BAR81W/BAR65x) P11 ( BAR66 , RF-Antenna Applications Type Characteristics VRWM [V] BAR66 D 150 DD 70 ESD1P0RFS ESD1P0RFW D


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PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
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