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Part Manufacturer Description Datasheet Download Buy Part
BAP64-05W-TP Micro Commercial Components Pin Diode, 175V V(BR), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
BAP64-05-TP Micro Commercial Components Pin Diode, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
BAP64-04W-TP Micro Commercial Components Pin Diode,

BAP64-05-TP datasheet (1)

Part Manufacturer Description Type PDF
BAP64-05-TP Micro Commercial Components RF Diodes, Discrete Semiconductor Products, DIODE RF PIN 175V 100MA SOT23 Original PDF

BAP64-05-TP Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - BAP64-04W

Abstract: BAP64
Text: Symbol Min. TYP IR Max. Unit 10 uA 1.0 1.1 0.52 0.37 0.23 20 0.5 0.35 40 V pF pF pF Conditions VR , =100MHz Revision: B www.mccsemi.com 1 of 3 2011/12/ 05 Typical Characteristics MCC TM Micro , www.mccsemi.com Revision: B 2 of 3 2012/12/ 05 MCC Micro Commercial Components TM Ordering Information Device (Part Number)- TP Packing Tape&Reel;3Kpcs/Reel *IMPORTANT NOTICE* Micro Commercial , of 3 2012/12/ 05 2 Micro Commercial Components


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PDF BAP64-04W BAP64-05W BAP64-06W 200mW OT-323 BAP64
2008 - BAP64-04W

Abstract: No abstract text available
Text: =50mA 0.52 Cd2 Conditions VR=175V 1.1 VF Max. Unit 10 uA 1.0 V VR=20V 0.5 pF , Components Ordering Information Device Packing (Part Number)- TP Tape&Reel;3Kpcs/Reel


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PDF BAP64-04W BAP64-05W BAP64-06W 200mW OT-323 BAP64-04W
Not Available

Abstract: No abstract text available
Text: Cd1 0.52 Cd2 0.37 Cd3 V Conditions VR=175V VR=20V IF=50mA 0.5 pF VR=1V,f , Information Device Packing (Part Number)- TP Tape&Reel;3Kpcs/Reel *IMPORTANT NOTICE* Micro


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PDF BAP64-04W BAP64-05W BAP64-06W 200mW OT-323
2014 - marking v6 07 diode

Abstract: No abstract text available
Text: resistance Min IF = 0.5 mA rD Parameter Conditions - 0.7 1.35  - 1.55 , 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with a 50 ï , surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale


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PDF BAP64-02 OD523 sym006 marking v6 07 diode
2013 - Not Available

Abstract: No abstract text available
Text: BAP64-04 / BAP64- 05 / BAP64-06 Small Signal General Purpose PiN Diode Elektronische Bauelemente , 2 MARKING CODE Part Name D BAP64-04 BAP64- 05 BAP64-06 4K 5K 6K Marking , Voltage VF IR Diode Capacitance CD 0.52 - 1.1 10 1 0.5 0.35 40 20 3.8 1.35 V , 0.5 mA, f =100MHz IF =1mA, f =100MHz IF =10mA, f =100MHz IF =100mA, f =100MHz When switched from , specification will not be informed individually. Page 1 of 2 BAP64-04 / BAP64- 05 / BAP64-06 Elektronische


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PDF BAP64-04 BAP64-05 BAP64-06 OT-23 BAP64-04 BAP64-05 100MHz
2014 - Not Available

Abstract: No abstract text available
Text: = 0.5 mA rD Parameter Conditions - 0.7 1.35  - 1.55 - s - , circuit (1) IF = 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with


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PDF BAP64-02 OD523
2014 - BAP64-04WS

Abstract: No abstract text available
Text: Forward Voltage VF IR Diode Capacitance CD 0.52 - 1.1 10 1 0.5 0.35 40 20 3.8 , =175V VR =20V VR =0, f =1MHz VR =1 V, f =1MHz VR =20 V, f =1MHz IF = 0.5 mA, f =100MHz IF =1mA, f


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PDF BAP64-04WS BAP64-05WS BAP64-06WS OT-323 BAP64-04WS BAP64-05WS 100MHz
2010 - Not Available

Abstract: No abstract text available
Text: resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF , . handbook, halfpage s 2 0 MLD367 21 (dB) - 0.5 handbook, halfpage s 2 (1) (2) 0 MLD368 21 (dB) -5 (3) -1 -10 -1.5 (4) -15 -2 -20 -2.5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 (3) IF = 1 mA. 2 2.5 f (GHz) 3 -25 0.5 1 1.5 2 2.5 f (GHz) 3 (4) IF = 0.5 mA. Diode inserted in series with a 50 stripline circuit and


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PDF M3D102 BAP64-05W BAP64-05W OT323 MAM382 R77/01/pp9 771-BAP64-05W-T/R
2008 - BAP64-02

Abstract: BAP64 NXP SMD diode MARKING CODE nxp marking code
Text: 0.35 IF = 0.5 mA diode forward resistance 0.48 VR = 20 V; f = 1 MHz rD VR = 0; f = 1 , -3 -20 -4 -5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) 3 1 1.5 2 2.5 3 f (GHz) (3) IF = 1 mA. (4) IF = 0.5 mA. Diode zero biased and , stripline circuit and biased via the analyzer Tee network; Tamb = 25 °C. Fig.4 -30 0.5 Insertion , surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale


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PDF BAP64-02 BAP64-02 BAP64 NXP SMD diode MARKING CODE nxp marking code
2012 - Not Available

Abstract: No abstract text available
Text: IR1 VR1=175V 10 IR2 VR2=20V 1 Cd1 VR=0V, f=1MHz Cd2 VR=1V,f=1MHz 0.5


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PDF OT-323 BAP64-04W OT-323 BAP64-04W BAP64-05W BAP64-06W 100MHz 100mA,
2001 - BAP63-01

Abstract: bap50-05 BAP64-03 BAP70-02 equivalent HSMP-3893 Diode RN731V BAP64-06W BAP64 1SV308 replacement BAP50-04
Text: -05W BAP50-02 BAP50-03 BAP50-04 BAP50- 05 BAP50-04W BAP50-05W BAR64-02W BAP64-02 BAR64-03W BAP64-03 BAR64-04 BAP64-04 BAR64- 05 BAP64- 05 BAR64-06 BAP64-06 BAR64-04W BAP64-04W BAR64-05W BAP64 , -01 BAR65-02W BAP65-02 BAR65-03W BAP65-03 BAR65-05W BAP65- 05 BAP65-05W BAP70-02 BA595 BAP70 , > 35 > 35 Cd (f=1 MHz) in fF Rd (100 MHz) 6V 20 V 0.5 mA 1 mA 2 mA 3 mA 5 mA 10 mA 100 mA , - 0.36 < 0.5 - -IR BA891 SOD523 Single - < 1 - - > 35 30 V


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2013 - Not Available

Abstract: No abstract text available
Text: Voltage VF IR Diode Capacitance CD 0.52 - 1.1 10 1 0.5 0.35 40 20 3.8 1.35 V , 0.5 mA, f =100MHz IF =1mA, f =100MHz IF =10mA, f =100MHz IF =100mA, f =100MHz When switched from


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PDF BAP64-04W BAP64-05W BAP64-06W OT-323 BAP64-04W BAP64-05W 100MHz
2010 - MARKING CODE V4

Abstract: MGU320 DIODE marking S4 06 BAP64-06W 1rd10 a/a/DIODE s212
Text: capacitance VR = 20 V; f = 1 MHz diode forward resistance 0.23 0.35 pF IF = 0.5 mA; f = 100 , IF = 100 mA; f = 100 MHz; note 1 10.9 dB IF = 0.5 mA; f = 900 MHz 1.86 dB IF = 0.5 mA; f = 1800 MHz 1.01 dB 1.06 dB 1.10 dB IF = 10 mA; f = , MHz insertion loss 2.23 IF = 1 mA; f = 1800 MHz s212 2.06 IF = 0.5 mA; f = 2450 , (dB) -5 (2) (3) (4) -2 -10 -3 -15 -4 -20 -5 0.5 (1) IF = 100 mA. (2


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PDF M3D102 BAP64-06W OT323 R77/02/pp9 MARKING CODE V4 MGU320 DIODE marking S4 06 BAP64-06W 1rd10 a/a/DIODE s212
2011 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAP64-04, 05 ,06 Pin Diode SOT-23 FEATURES  High voltage ,current controlled  RF resistor for RF attenuators and switches  Low diode capacitance  Low diode forward resistance  Low series inductance  For applications up to 3 GHz BAP64-04 BAP64- 05 , Reverse Current Cd1 VR1=175V VR2=20V 1 VR=0V, f=1MHz 0.52 Cd2 0.5 Cd3 40


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PDF OT-23 BAP64-04 OT-23 BAP64-04 BAP64-05 BAP64-06 100MHz 100mA,
2014 - marking v6 07 diode

Abstract: No abstract text available
Text: resistance Min IF = 0.5 mA rD Parameter Conditions - 0.7 1.35  - 1.55 , 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with a 50 ï


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PDF BAP64-03 OD323 sym006 marking v6 07 diode
2010 - BAP64-03

Abstract: BAP64-03,115
Text: V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = , (1) (2) 0 MCD776 21 (dB) -1 S21 2 (3) (dB) -10 -2 (4) -3 -20 -4 -5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) 3 -30 0.5 1 1.5 2 2.5 f (GHz) 3 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 , rights. Printed in The Netherlands R77/ 05 /pp8 Date of release: 2004 Feb 11 Mouser Electronics


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PDF BAP64-03 BAP64-03 OD323 sym006 OD323) R77/05/pp8 771-BAP64-03-T/R BAP64-03,115
1999 - BP317

Abstract: BAP64-02 smd diode 6F MCC SMD DIODE
Text: MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz , - 0.52 0.37 0.23 20 10 2 0.7 1.55 BAP64-02 MAX. 1.1 - - 0.5 0.35 40 20 3.8 1.35 - UNIT V V , Plastic surface mounted package; 2 leads BAP64-02 SOD523 A c HE v M A D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm A 0.7 0.5 bp 0.35 0.25 c


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PDF M3D319 BAP64-02 BAP64-02 OD523 OD523) MAM405 125004/00/02/pp8 BP317 smd diode 6F MCC SMD DIODE
2010 - BAP64-05

Abstract: DIODE marking S4 06
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAP64- 05 Silicon PIN diode , specification Silicon PIN diode BAP64- 05 FEATURES PINNING High voltage, current controlled , PIN diode BAP64- 05 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL , = 20 V; f = 1 MHz diode forward resistance 0.23 0.35 pF IF = 0.5 mA; f = 100 MHz; note , specification Silicon PIN diode BAP64- 05 GRAPHICAL DATA MCD769 102 handbook, halfpage MCD770


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PDF M3D088 BAP64-05 R77/04/pp8 BAP64-05 DIODE marking S4 06
BAP64-05

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAP64- 05 Silicon PIN diode Preliminary specification , inductance · For applications up to 3 GHz. BAP64- 05 PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode , Preliminary specification Silicon PIN diode ELECTRICAL CHARACTERISTICS T j= BAP64- 05 25 °C unless , , f = 1 MHz V R = 20 V; f = 1 MHz 200 - 0.95 0.52 0.37 0.23 20 10 2 0.7 1.55 1.1 0.5 0.35 40 20 3.8 1.35 V V pF pF PF Q. Q. Cl Q (IS cd rD diode forward resistance lF = 0.5 mA; f


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PDF BAP64-05 BAP64-05 SCA64 125004/00/02/pp8
2000 - Not Available

Abstract: No abstract text available
Text: 100 MHz; note 1 diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 , s 2 21 (dB) - 0.5 (1) 21 (dB) -5 (2) (3) -1 -10 (4) -1.5 -15 -20 -2 -2.5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) -25 0.5 , values. 2000 Jul 13 1.5 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50


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PDF M3D102 BAP64-05W OT323 613512/01/pp8
2001 - BAP64-04W

Abstract: MLD520
Text: resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 rD 0.7 1.35 L , -20 -5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) -25 0.5 3 , ; typical values. 2001 Jan 29 1.5 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with


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PDF M3D102 BAP64-04W OT323 613512/03/pp8 BAP64-04W MLD520
2005 - BB142

Abstract: 2SK163 BF245c SMD bap50 spice BF1109 spice 2SK508 BB143 BB184LX BF245A spice BF245c spice
Text: BGA6589 SOT343R SOT343R BGA2003 BGA2001 BAP51-02 BAP50- 05 BGA2003 BGA2001 BGA2003 900 , BGA2716 SOT343 BFG325 BAP51-02 BAP50- 05 7 9 1.4 (GPS) LNA GPS IC LNA MMIC , BB198 BB199 BB140LX BB143LX BB404LX 05 11 1 CQS CQS CQS CQS CQS CQS DEV DEV CQS CQS , 0.2 1 1 0.5 1 1 min 1.27 2.22 1.85 2.05 2.05 2.75 2.55 7.2 7.2 7.6 4.8 11.8 4.5 , 7.5 1 7.5 rs ( ) 1.2 0.4 0.5 0.5 0.5 0.6 0.6 0.35 0.4 0.4 0.8 0.25 0.35 0.35


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PDF TZA30x6 BB142 2SK163 BF245c SMD bap50 spice BF1109 spice 2SK508 BB143 BB184LX BF245A spice BF245c spice
1996 - CGD923

Abstract: 2SK163 BFG480W BFG591 amplifier bf998 BF1009SW 3SK290 BFG235 2N5653 TEA6848H
Text: for 900&1800 MHz Demoboard for W-CDMA RF6 BAP51-02 BAP50- 05 BGA2003 BGA2001 BGA2003 7 , BFG424F IF 2.45Ghz T/R, RF Switch Low-impedance PIN diode RF6 BAP51-02 BAP50- 05 , 1 1 1 1 0.2 0.2 1 1 0.5 0.5 1 1 min max 1.27 1.38 2.22 2.55 1.85 2.35 2.05 2.55 , 0.5 0.5 0.6 0.6 0.35 0.4 0.4 0.4 0.8 max 0.25 0.35 0.35 = ad* = FM(CREST-ICTEF6860 , SOD323 1.70 2.10 28 10.0 0.5 28 0.75 - X X - - 1.60 2.00 28


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PDF solutions/multimarket/transistors/25 CGD923 2SK163 BFG480W BFG591 amplifier bf998 BF1009SW 3SK290 BFG235 2N5653 TEA6848H
2010 - Not Available

Abstract: No abstract text available
Text: IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 rD 0.7 1.35  when , ) −10 (4) −2 −3 −20 −4 −5 0.5 1 1.5 2 (1) IF = 100 mA. f (GHz) −30 0.5 3 1 1.5 2 2.5 3 f (GHz) (3) IF = 1 mA. (2) IF = 10 mA. 2.5 (4) IF = 0.5 mA. Diode inserted in series with a 50  stripline circuit and biased via , patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/ 05 /pp8


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PDF BAP64-03 sym006 OD323 R77/05/pp8
2010 - BAP64-04W

Abstract: DIODE marking S4 06
Text: MHz diode forward resistance 0.23 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 20 40 , (dB) -5 (2) (3) (4) -2 -10 -3 -15 -4 -20 -5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) -25 0.5 3 2 2.5 f (GHz) 3 Diode , = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 stripline circuit and biased via


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PDF M3D102 BAP64-04W OT323 R77/03/pp9 BAP64-04W DIODE marking S4 06
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