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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUHS20F60 CUHS20F60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H
CUHS15S60 CUHS15S60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H
CUHS20S60 CUHS20S60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H
CUHS15F60 CUHS15F60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC

B26 diode SCHOTTKY Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - MBRS260T3

Abstract: marking code b26
Text: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency , for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER , Body Model = 3B Marking: B26 SMB CASE 403A PLASTIC MARKING DIAGRAM B26 B26 = Device Code


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PDF MBRS260T3 r14525 MBRS260T3/D MBRS260T3 marking code b26
2001 - marking B26 diode SCHOTTKY

Abstract: 403a MBRS260T3
Text: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal­to­silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency , for Over­Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER , Body Model = 3B Marking: B26 SMB CASE 403A PLASTIC MARKING DIAGRAM B26 B26 = Device Code


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PDF MBRS260T3 r14525 MBRS260T3/D marking B26 diode SCHOTTKY 403a MBRS260T3
2008 - diode td15

Abstract: diode td13 DIODE B12 51 B12 68 diode
Text: for target application. V DD schottky barrier diode V DD 10K VDD XRST V T + 220 , G10 R17 R16 R15 R14 GND VDD R13 R12 R11 R10 100-Pin TQFP (Top View) B24 B25 VDD GND B26 B27 , B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 14 / 27 LVDS Data Output Table for Function , Pixel Data MAP=H Input Pin Name R22 R23 R24 R25 R26 R27 G22 G23 G24 G25 G26 G27 B22 B23 B24 B25 B26 B27 , G24 G25 B20 B21 B22 B23 B24 B25 HSYNC VSYNC DE R26 R27 G26 G27 B26 B27 L 18 / 27 LVCMOS Data


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PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V diode td15 diode td13 DIODE B12 51 B12 68 diode
2011 - Diode Mark B14

Abstract: No abstract text available
Text: application. VDD VDD schottky barrier diode 10KO VDD XRST 220O VT+ Be careful of , 33 32 31 30 29 28 27 26 R15 GND VDD R14 R13 R12 R11 R10 GND VDD CLKOUT B27 B26 B25 B24 B23 GND VDD , B21 B22 B23 B24 B25 B26 B27 HSYNC VSYNC DE 18Bit R20 R21 R22 R23 R24 R25 G20 G21 G22 G23 G24 G25 B20 , G22 G23 G24 G25 G26 G27 B20 B21 B22 B23 B24 B25 B26 B27 HSYNC VSYNC DE TFT Panel Data 24Bit LSB R10 , ' B26 ' B25' B24' X X X B27 B26 B25 B24 X'' RD2+/- B20' G21


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PDF BU7985KVT 56bit 12057EAT04 150MHz 112MHz 180MHz) 20MHz 112MHz. R1120A Diode Mark B14
2011 - BU7988

Abstract: No abstract text available
Text: application. VDD VDD schottky barrier diode 10KO VDD XRST 220O VT+ Be careful of , 33 32 31 30 29 28 27 26 R15 GND VDD R14 R13 R12 R11 R10 GND VDD CLKOUT B27 B26 B25 B24 B23 GND VDD , B21 B22 B23 B24 B25 B26 B27 HSYNC VSYNC DE 18Bit R20 R21 R22 R23 R24 R25 G20 G21 G22 G23 G24 G25 B20 , G22 G23 G24 G25 G26 G27 B20 B21 B22 B23 B24 B25 B26 B27 HSYNC VSYNC DE TFT Panel Data 24Bit LSB R10 , ' B26 ' B25' B24' X X X B27 B26 B25 B24 X'' RD2+/- B20' G21


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PDF 56bit BU7985KVT 12057EAT04 150MHz 112MHz 180MHz) 20MHz 112MHz. R1120A BU7988
2008 - DIODE B23

Abstract: DIODE B12 51 b1375 IC-1920 TOP MARK B2X
Text: for target application. V DD schottky barrier diode V DD 10K VDD XRST V T + 220 , VDD CLKOUT B27 B26 B25 B24 B23 GND VDD B22 B21 B20 G27 GND VDD G26 1 2 3 4 5 6 7 , G24 G26 MSB G27 G25 G27 LSB B20 B20 B21 B21 B22 B20 B22 B23 B21 B23 B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 HSYNC HSYNC HSYNC VSYNC VSYNC VSYNC DE DE DE LSB MSB LSB MSB LSB MSB , X' B27' B26 ' B25' B24' X X X B27 B26 B25 B24 X'' RD2+/- B20' G21


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PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. DIODE B23 DIODE B12 51 b1375 IC-1920 TOP MARK B2X
2010 - diode b22

Abstract: rohm b14 DIODE B23 ROHM R25
Text: for target application. V DD schottky barrier diode V DD 10K VDD XRST V T + 220 , VDD CLKOUT B27 B26 B25 B24 B23 GND VDD B22 B21 B20 G27 GND VDD G26 1 2 3 4 5 6 7 , G24 G26 MSB G27 G25 G27 LSB B20 B20 B21 B21 B22 B20 B22 B23 B21 B23 B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 HSYNC HSYNC HSYNC VSYNC VSYNC VSYNC DE DE DE LSB MSB LSB MSB LSB MSB , X' B27' B26 ' B25' B24' X X X B27 B26 B25 B24 X'' RD2+/- B20' G21


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PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. R1010A diode b22 rohm b14 DIODE B23 ROHM R25
2009 - Not Available

Abstract: No abstract text available
Text: enough examination for target application. V DD V DD VDD schottky barrier diode 10KΩ V T , 31 30 29 28 27 26 R15 GND VDD R14 R13 R12 R11 R10 GND VDD CLKOUT B27 B26 B25 , B26 B24 B26 MSB B27 B25 B27 HSYNC HSYNC HSYNC VSYNC VSYNC VSYNC DE DE DE 15 / 20 , RD2+/- X' B27' B26 ' B25' B24' X X X B27 B26 B25 B24 X'' B20' G21' G20 , G15 G14 G13 B23'' RC1+/- DE RD1+/- X VSYNC HSYNC B27 B26 B25 B24 DE B21 B20


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PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz.
2008 - schottky barrier diode b22

Abstract: diode b27 Diode B2x Diode Mark ON B14 schottky B22 DIODE B23 BU7988KVT DIODE B12 51 Diode Mark B14 TQFP100V
Text: for target application. V DD V DD VDD schottky barrier diode 10K V T XRST 220 , R15 GND VDD R14 R13 R12 R11 R10 GND VDD CLKOUT B27 B26 B25 B24 B23 GND VDD B22 B21 , B21 B23 B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 HSYNC HSYNC HSYNC VSYNC , B23'' RC2+/- RD2+/- X' B27' B26 ' B25' B24' X X X B27 B26 B25 B24 X , B13 B12 G17 G16 G15 G14 G13 B23'' RC1+/- DE RD1+/- X VSYNC HSYNC B27 B26 B25 B24


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PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. schottky barrier diode b22 diode b27 Diode B2x Diode Mark ON B14 schottky B22 DIODE B23 BU7988KVT DIODE B12 51 Diode Mark B14 TQFP100V
BU7988KVT

Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
Text: VDD schottky barrier diode 10K V T XRST 220 Be careful of temperature of the capacitor , B25 VDD GND B26 B27 HSYNC VSYNC DE CLKIN RF RS Reserved0 MAP MODE1 MODE0 OE SEL_BIT , B23 B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 14 / 27 LVDS Data Output , B23 B24 B25 B26 B27 HSYNC VSYNC DE R20 R21 G20 G21 B20 B21 L R20 R21 R22 R23 R24 , B26 B27 L 18 / 27 LVCMOS Data Inputs Timing Diagrams in Dual Link Dual-in / Dual-out Mode


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PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V 500pcs 08T241A BU7988KVT DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
2011 - TA141

Abstract: HSYNC, VSYNC, DE TB-141
Text: schottky barrier diode 10KO VDD VDD XRST 220O XRST Internal Reset VT+ Be careful of temperature of , ROHM Co., Ltd. All rights reserved. B24 B25 VDD GND B26 B27 HSYNC VSYNC DE CLKIN RF RS Reserved0 MAP , LSB 24Bit R20 R21 R22 R23 R24 R25 R26 R27 G20 G21 G22 G23 G24 G25 G26 G27 B20 B21 B22 B23 B24 B25 B26 , G25 G26 G27 B20 B21 B22 B23 B24 B25 B26 B27 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved , G26 G27 B22 B23 B24 B25 B26 B27 HSYNC VSYNC DE R20 R21 G20 G21 B20 B21 L MAP=L Input Pin Name R20 R21


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PDF 56bit BU7988KVT 12057EAT05 150MHz 112MHz 224MHz) TQFP100V R1120A TA141 HSYNC, VSYNC, DE TB-141
2011 - TA141

Abstract: diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171
Text: schottky barrier diode 10KO VDD VDD XRST 220O XRST Internal Reset VT+ Be careful of temperature of , ROHM Co., Ltd. All rights reserved. B24 B25 VDD GND B26 B27 HSYNC VSYNC DE CLKIN RF RS Reserved0 MAP , LSB 24Bit R20 R21 R22 R23 R24 R25 R26 R27 G20 G21 G22 G23 G24 G25 G26 G27 B20 B21 B22 B23 B24 B25 B26 , G25 G26 G27 B20 B21 B22 B23 B24 B25 B26 B27 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved , G26 G27 B22 B23 B24 B25 B26 B27 HSYNC VSYNC DE R20 R21 G20 G21 B20 B21 L MAP=L Input Pin Name R20 R21


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PDF BU7988KVT 56bit 12057EAT05 150MHz 112MHz 224MHz) TQFP100V R1120A TA141 diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171
Diode Mark ON B14

Abstract: Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
Text: for target application. V DD V DD VDD schottky barrier diode 10K V T XRST 220 , R15 GND VDD R14 R13 R12 R11 R10 GND VDD CLKOUT B27 B26 B25 B24 B23 GND VDD B22 B21 , B21 B23 B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 HSYNC HSYNC HSYNC VSYNC , B23'' RC2+/- RD2+/- X' B27' B26 ' B25' B24' X X X B27 B26 B25 B24 X , B13 B12 G17 G16 G15 G14 G13 B23'' RC1+/- DE RD1+/- X VSYNC HSYNC B27 B26 B25 B24


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PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. TQFP100V 500pcs Diode Mark ON B14 Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
2008 - DIODE B12 51

Abstract: diode td15 BU7988KVT LVDS Serializer B12 2N DIODE B10B20 Diode Mark ON B14 b12 diode DIODE B12 DIODE B12 60
Text: VDD schottky barrier diode 10K V T XRST 220 Be careful of temperature of the capacitor , B25 VDD GND B26 B27 HSYNC VSYNC DE CLKIN RF RS Reserved0 MAP MODE1 MODE0 OE SEL_BIT , B23 B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 14 / 27 LVDS Data Output , B23 B24 B25 B26 B27 HSYNC VSYNC DE R20 R21 G20 G21 B20 B21 L R20 R21 R22 R23 R24 , B26 B27 L 18 / 27 LVCMOS Data Inputs Timing Diagrams in Dual Link Dual-in / Dual-out Mode


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PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V DIODE B12 51 diode td15 BU7988KVT LVDS Serializer B12 2N DIODE B10B20 Diode Mark ON B14 b12 diode DIODE B12 DIODE B12 60
2010 - schottky barrier diode b22

Abstract: g17g diode td15
Text: for target application. V DD schottky barrier diode V DD 10K VDD XRST V T + 220 , G10 R17 R16 R15 R14 GND VDD R13 R12 R11 R10 100-Pin TQFP (Top View) B24 B25 VDD GND B26 B27 , B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 14 / 27 LVDS Data Output Table for Function , Pixel Data MAP=H Input Pin Name R22 R23 R24 R25 R26 R27 G22 G23 G24 G25 G26 G27 B22 B23 B24 B25 B26 B27 , G24 G25 B20 B21 B22 B23 B24 B25 HSYNC VSYNC DE R26 R27 G26 G27 B26 B27 L 18 / 27 LVCMOS Data


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PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V R1010A schottky barrier diode b22 g17g diode td15
FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for , -247 B9 B9 B10 B11 B11 Schottky Barrier Diode Axial SOD-323FL SOD-123 SMA NA NB Narrow SMC , B23 B24 B24 B25 B26 Case Outlines B2733 B1 Rectifier Diode Part Number VRRM (V , Schottky Barrier Diode Part Number VRRM (V) IFAV (A) Condition IFSM (A) VFM(V) 25 , 150 150 150 9 9 9 9 9 9 9 9 9 9 9 B13 Schottky Barrier Diode Part Number


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PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
2009 - Diode Mark B14

Abstract: b26 diode
Text: for target application. V DD schottky barrier diode V DD 10K VDD XRST V T + 220 , G10 R17 R16 R15 R14 GND VDD R13 R12 R11 R10 100-Pin TQFP (Top View) B24 B25 VDD GND B26 B27 , B24 B22 B24 B25 B23 B25 B26 B24 B26 MSB B27 B25 B27 14 / 27 LVDS Data Output Table for Function , Pixel Data MAP=H Input Pin Name R22 R23 R24 R25 R26 R27 G22 G23 G24 G25 G26 G27 B22 B23 B24 B25 B26 B27 , G24 G25 B20 B21 B22 B23 B24 B25 HSYNC VSYNC DE R26 R27 G26 G27 B26 B27 L 18 / 27 LVCMOS Data


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PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V Diode Mark B14 b26 diode
2007 - semikron skiip 31 nab 12 T 18

Abstract: No abstract text available
Text: brake chopper) is also needed for other evaluations, a Schottky diode has to be connected as shown in , Applications # :6/ B26 5*6 IJKL -3A %&'M?L +*A4127 /3 .=622(,=-72(06/A@2 )/6)4/.7N /3B26.26 A6/B27N OP'(5 , ,4. 7/@3-1 B*1.-@2 &4.,4. ,2-C )46623. &4.,4. - B26 -@2 )46623. EL- ; ¥< U$H %-WQ 7]/.)=/3@ 562^423 , 1-.)= D *4.,4. # Typical Applications # :6/ B26 5*6 IJKL -3A %&'M?L +*A4127 /3 .=622(,=-72(06 , . SEMIDRIVERTM Values '4,1> B*1.-@2 ,6/+-6> I3,4. 7/@3-1 B*1.-@2 &4.,4. ,2-C )46623. &4.,4. - B26


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PDF 43A26B 6/B26 A4127 /3B26 A6/B27N semikron skiip 31 nab 12 T 18
2011 - Not Available

Abstract: No abstract text available
Text: target application. VDD schottky barrier diode VDD VDD 10KO XRST VT+ 220O XRST , R11 R10 GND VDD CLKOUT B27 B26 B25 B24 B23 GND VDD B22 B21 B20 G27 GND VDD G26 , B13 B15 B25 B23 B25 B16 B14 B16 B26 B24 B26 B17 B15 B17 B27 , ' G23' B23 B22 G27 G26 G25 G24 G23 B23'' RC2+/- X' B27' B26 ' B25' B24' X X X B27 B26 B25 B24 X'' RD2+/- B20' G21' G20' R21


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PDF 56bit 12057EAT04 BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz.
D 8243 HC

Abstract: SO3A 6164 ram rb1-e N74S00 ITT301 N74S04 B177 55604A CD 5888
Text: Signetîcs Integrated Circuits Schottky TTL Schottky TTL 74S Series Introduction Schottky TTL uses a diode clamp design to ensure the highest speed possible at TTL logic levels typically 3ns gate propagation delay and 90 MHz flip flop toggle rate. However they remain compatible with most of the popular , Gate 5S388G 1 B26 N74S37N Quad 2-lnput NAND Buffer 5S389E 1 B28 N74S38N Quad 2-lnput NAND Buffer (o/c , Vrc « 4A 4Y 36 3A 3Y JTU^U^JìTuttjTUTL JZ TTGTTlrTÎmTîrE' TA 16 IV 2A 2B 2Y GNO B26 3B 3A


OCR Scan
PDF N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A D 8243 HC SO3A 6164 ram rb1-e N74S00 ITT301 N74S04 B177 55604A CD 5888
Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Text: 340mA CHOKE COIL 60V 2A Schottky Diode 40V 2A Schottky Diode 33V 1.5A FUSE 1394 R/A flat header PCI , B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28


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PDF PD72872 SSG-Z-140 GRM39F105Z10PT TEMSVB21A226M8R TEMSVB21C106M8R TESVD21A226M12R GHM1525B472K250 SLF10145T-471MR47 DSX630G24R576MHZ NFM4516P13C204F Schottky Diode 40V 2A NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
2005 - MBRS260T3G

Abstract: B26G MBRS260T3
Text: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency , http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Compact Package with J-Bend , °C) Symbol Value Unit VRRM VRWM VR 60 V IO 2.0 A IFSM 60 A B26 =


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PDF MBRS260T3 MBRS260T3/D MBRS260T3G B26G MBRS260T3
2010 - B26G

Abstract: marking B26 diode SCHOTTKY diode mbrs260t3 MBRS260T3 MBRS260T3G DSASW00315214
Text: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency , http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Compact Package with J-Bend , AYWW B26G G B26 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G =


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PDF MBRS260T3 MBRS260T3/D B26G marking B26 diode SCHOTTKY diode mbrs260t3 MBRS260T3 MBRS260T3G DSASW00315214
2012 - MBRS260T3G

Abstract: B26G
Text: MBRS260T3G, NRVBS260T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage , http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Compact , Characteristics AYWW B26G G B26 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week =


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PDF MBRS260T3G, NRVBS260T3G AEC-Q101 MBRS260T3/D MBRS260T3G B26G
2010 - MBRS260T3

Abstract: MBRS260T3G
Text: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency , http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Compact Package with J-Bend , B26G G B26 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free


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PDF MBRS260T3 MBRS260T3/D MBRS260T3 MBRS260T3G
Supplyframe Tracking Pixel