The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

B 773 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
sanyo S.E. 60 WF capacitors

Abstract: B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770-MAX773 MAX770 MAX771 MAX772 MAX773
Text: MAX773. An NPN transistor can be used, but be extremely careful w hen d e te rm in in g the b a se c u , follows: 1 b = Ilim / B Use the worst-case (lowest) value for B given in the transistor 's electrical , high leakage current. NPN Transistors The M A X 773 ca n d riv e NPN tra n s is to rs , b u t be , PFM Control Scheme 300kHz Switching Frequency M A X 770-M A X 773 _ Ordering , , 10sec).+300°C CLJLXVVI-OLLXVin S tre sse s b e y o n d th o se lis


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PDF MAX770-MAX773 110nA 300kHz) MAX770/MAX771/MAX772 MAX770P MAX773 sanyo S.E. 60 WF capacitors B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770 MAX771 MAX772 MAX773
2008 - RP902

Abstract: No abstract text available
Text: x ­ E2 a b c d Code a b c d e f g Part Number Contents Designation of Package Type K , No Yes No Yes No Yes No A B C D VFM / PWM VFM / PWM PWM ONLY PWM ONLY e Designation of function options2. The start order A B C D f E F G H J K L M g DCDC12 DCDC12 DCDC12 DCDC12 DCDC12 DCDC12 DCDC21 , Leak Current "H" LX1 Leak Current "L" Pch Transistor ON Resistance Nch Transistor ON Resistance LX1 , Pch Transistor ON Resistance Nch Transistor ON Resistance LX2 Limit Current Protection Delay Time


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PDF RP902 EA-196-080311 RP902
8206F

Abstract: transistor ge 703 BA8205 BA820 1SS131 B 773 transistor ML8205 BA6565A
Text: volta ge B A 8 206 P ow er dissipation B A 8206F O pe ra ting tem pe rature S tora ge tem pe rature Topr , Circuit V SUS Fig. 4 'si 's u s k f Hl v c c = v su s R1 = 773 k il, C1 = 0.1 ^ F R2 = 595 k , O L T A G E : V cc (V ) Figure 1 Industrial ICs Figure 2 Source transistor RDHVn 77 , L T A G E : V cc (V ) Figure 3 Sink transistor Test circuits Switch settings for individual tests Test v si, v sus Ui> 'sus SW1 1 1 SW2 1 1 2 3 R1 = 773 ki2, C1 = 0.1 nF R2 = 595 k


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PDF BA8206 BA8206F BA8206F BA8205, BA6565A ML8205 BA8206 8206F transistor ge 703 BA8205 BA820 1SS131 B 773 transistor
PQHR106YA

Abstract: PQHR ML8204 TELEPHONE RINGER
Text: ringer oscillation II < 773 k£2, C1 =0.1 (iF R2 = , ) Figure 2 Source transistor noHfn 71 BA8204, BA8204F Telephone systems: Tone ringer 40 l Oi , Sink transistor Test circuits IS S I 31 X 4 PQHR106YA Piezoelectric buzzer Figure 4 Ringer , Test sw. 1 3 2 sw 2 1 2 2 k fm fH2 R, = 773 k£l, C, = 0.1 |iF R2 = 595 ki2, C2= 0.0022 nF , OUT 1S S131X 4 BA8204/ B A8204F Figure 9 Example of BA8204 or BA8204F application 74 RDNm


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PDF BA8204 BA8204F BA8204F BA8204 BA6564A ML8204 S131X BA8204/B PQHR106YA PQHR TELEPHONE RINGER
transistor D 5703

Abstract: transistor c 458
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5255 2 SC 5 2 5 5 V H , Current - - ÏCBO VCB = 10V, IE =0 1 ¡JL A Emitter Cut-off Current - - !EB0 v e b = i v , ic = o hpE Tr , pF Cob V c b = 5V, IE = 0, f = 1MHz Reverse Transfer (Note 2) - 0.4 0.8 pF Cre Capacitance (Note 1 , COLLECTOR CURRENT Ic (mA) COLLECTOR-BASE VOLTAGE Vc b 77.3 77.3 77 76.5 76 75.2 74.2 Mag. 0.866 0.701


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PDF 2SC5255 S21el2 S2l147 transistor D 5703 transistor c 458
2012 - AN44183A

Abstract: No abstract text available
Text: Phase A Torque reference voltage input Phase B Torque reference voltage input Internal reference voltage , output Mix Decay setup 1 Mix Decay setup 2 Phase B motor drive output 2 Phase B motor drive output 2 Phase B motor drive output 1 Phase B motor drive output 1 N.C. N.C. N.C. N.C. N.C. Phase B motor current detection Phase B motor current detection Notes) Concerning detail about pin description, please refer to , Low High Low High - - ST3 Low Low Low Low High High Low Low Low Low High High Phase B 90° advance to


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PDF AN44183A AN44183A
2012 - Not Available

Abstract: No abstract text available
Text: Phase B current (%) ­70.7 ­ 77.3 ­83.1 ­88.2 ­92.4 ­95.7 ­98.1 ­99.5 ­100 ­99.5 ­98.1 ­95.7 ­92.4 ­88.2 , 95.7 92.4 88.2 83.1 77.3 Phase B current (%) 70.7 77.3 83.1 88.2 92.4 95.7 98.1 99.5 100 99.5 98.1 95.7 , Note) Ta = 25°C±2°C, unless otherwise specified. B No. Power Block 1 2 3 4 Parameter Symbol , Electrical Characteristics at VM = 24.0 V (continued) Note) Ta = 25°C±2°C, unless otherwise specified. B , 24.0 V (continued) Note) Ta = 25°C±2°C, unless otherwise specified. B No. Parameter Symbol


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PDF AN44183A HSOP056-P-0300F AN44183A
diode phc 47

Abstract: 0/zener diode phc 47
Text: Slow-decay mode the low side transistor of the H-bridge is turned off keeping the high side transistor on , transistor and diode loop. The current decays slowly because of the low loop voltage. The Slow-decay can be , 23 6 22 11 21 5 20 7 19 10 18 12 INH1/ INH2/ A B O1 2 C , 42.8 47.1 51.4 55.6 59.6 63.4 67.2 70.7 74.1 77.3 80.3 83.1 85.8 88.2 90.4 92.4 94.2 , 70.7 74.1 77.3 80.3 83.1 85.8 88.2 90.4 92.4 94.2 95.7 97.0 98.1 98.9 99.5 99.9 100


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PDF LS8292 LS8293 diode phc 47 0/zener diode phc 47
2011 - LS8292

Abstract: No abstract text available
Text: Slow-decay mode the low side transistor of the H-bridge is turned off keeping the high side transistor on , transistor and diode loop. The current decays slowly because of the low loop voltage. The Slow-decay can be , 20 7 19 10 18 12 EN/ Cm 9 10MΩ A B O1 XTLO TBLNK D O2 , 51.4 55.6 59.6 63.4 67.2 70.7 74.1 77.3 80.3 83.1 85.8 88.2 90.4 92.4 94.2 95.7 97.0 , 77.3 80.3 83.1 85.8 88.2 90.4 92.4 94.2 95.7 97.0 98.1 98.9 99.5 99.9 100 99.9 99.5


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PDF LS8292 LS8293 LS8292
cd 5411 ic

Abstract: TRANSISTOR C 3619 uhf amp circuit diagrams 2SC4673 ic 2764 B 773 transistor c 3927 transistor c 3927 EN3927 2038p
Text: Ordering number : EN3927 NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amp, Wide-Band Amp Applications Features Package Dimensions · Low noise figure : NF=1.5dB typ (f=0.9GHz). unit: mm · High power gain : S2le2=8.0dB typ (f=0.9GHz). · High cutoff frequency : fT=4.5GHz typ. 2038-PCP [2SC4673] E : Emitter C : Collector B : Base SANYO : PCP Specifications , 0.064 77.3 0.094 77.9 0.125 77.3 0.142 76.8 0.155 76.1 0.186 74.7 S22 MAG ANG 0.535


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PDF EN3927 2SC4673 2038-PCP 2SC4673] 250mm2 cd 5411 ic TRANSISTOR C 3619 uhf amp circuit diagrams 2SC4673 ic 2764 B 773 transistor c 3927 transistor c 3927 EN3927 2038p
Not Available

Abstract: No abstract text available
Text: Characteristics1 105°C/W 9jc Active Transistor Power Dissipation 275 mW Junction Temperature Above Case , 14.02 12.99 11.24 8.62 5.58 2.48 -.3 8 -3.09 -5.58 - 7.73 -9.13 -10.02 -10.22 -10.72 -11.10 , .575 .624 .660 .683 .708 .733 . 773 .816 .848 175.3 173.3 -98.1 -79.8 -90.2 -102.5 , -168.5 170.3 146.1 1-69 4 4 4 7 S A 4 0 0 1 0 b b 3 34T ■dB -20.566 -20.541 -20.672


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PDF PP-38
12N08l

Abstract: 2n08 MTP12N10L B 773 transistor 70220AB YLE relay 221A-04 AN569 MTP12N08L yi73
Text: JUL 12 '00 14:10 FR SPC TECHNOLOGY 773 907 5180 TO 9011441132794449 P.02/08 li ¿(dtftf y:bH HM , Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS Those , «»• JUL 12 '00 14:11 FR SPC TECHNOLOGY 773 907 5180 TO 9011441132794449 P.03/08 jul il ¿uuu a , * 300 (it, Duty Cycle « 7%. motorola MTOi'Hinai ^ mtim^MiAMu^ JUL 12 '00 14:11 FR SRC TECHNOLOGY 773 , <_cjcJtj wJ - rill I I M^ w»i_ivvi 773 907 5180 TO 9011441132794449 P.05/08 l_ I t I !_ IV. 1_ (_


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PDF 221A04 70-220AB MTP12Nfi 12N08l 2n08 MTP12N10L B 773 transistor 70220AB YLE relay 221A-04 AN569 MTP12N08L yi73
2004 - mj 773

Abstract: 2SK3443
Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3443 Switching , pin. VDD = 50 V, Tch = 25°C (initial), L = 773 µH, RG = 25 , IAR = 30 A 4 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an , VDD VDS (V) Test circuit RG = 25 VDD = 50 V, L = 773 µH 5 Wave form AS = 1 B VDSS L I2 B 2 VDSS - VDD 2004-07-06 2SK3443 RESTRICTIONS ON PRODUCT USE


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PDF 2SK3443 mj 773 2SK3443
2002 - k344

Abstract: No abstract text available
Text: ) Test circuit RG = 25 VDD = 50 V, L = 773 µH AS = Wave form 1 B VDSS L I2 B - 2 VDSS VDD , 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm · · · · Low drain-source ON , that the channel temperature is below 150°C. Note 2 VDD = 50 V, Tch = 25°C (initial), L = 773 µH, RG = , temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 1


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PDF 2SK3443 k344
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SC5255 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5255 VHF-UHF , Type Name hpE Rank MHR^" TET " B " l 2 MICROWAVE CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , €” !CBO VCB = 10V, IE = 0 1 ¡j.A Emitter Cut-off Current — — v EB = iv , I c = 0 ie b o hpE , can m alfu n ctio n or fa il due to th e ir inhere nt e le ctrical sensitivity an d v u ln e ra b , fa ilu re o f a T O S H IB A prod u ct could cause loss of hum an life, b odily injury or d a m a g


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PDF 2SC5255
2006 - Not Available

Abstract: No abstract text available
Text: ) Test circuit RG = 25 VDD = 50 V, L = 773 µH Wave form AS = 1 B VDSS L I2 B 2 VDSS - , 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = , does not exceed 150°C. Note 2 VDD = 50 V, Tch = 25°C (initial), L = 773 µH, RG = 25 , IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an


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PDF 2SK3443
Not Available

Abstract: No abstract text available
Text: °C (initial), L = 773 jiH, R g = 25 i2, Ia r = 30 A This transistor is an electrostatic sensitive device , circuit Rg = 25 P. V dd = 50 V, L = 773 fiH Wave form = ^ l `2 V ds eas Bv d s s b v d s s - vqd , TOSHIBA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ji-MOSV) 2SK3443 T E N T A T IV E 2SK3443 Industrial Applications U nit in mm High Speed Switching, High Current , t on 0< ^ r T :lRL = 5 .0 n / b J v DD= / o v Duty á 1%, tw = 10 us Qg D < o C fl


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PDF 2SK3443
tb 1253 ang

Abstract: No abstract text available
Text: . , _ +125°C eJC . 105°C/W Active Transistor Power Dissipation . . . , E i> n im n b b 0007=154 0 b i a v a UTO/UTC/PPA 441 Series Thln-Fllm Cascadable , FREQ. MHz B IA S = 15,00 VOLTS VSWR IN GAIN dB 1.29 1.16 1.10 1.31 1.65 2.06 2v42 , ,62 5.58 2.48 -.38 -3.09 -5.58 - 7.73 . -9.13 -10.02 -10.22 -10.72 -11.10 PHASE DEV -.20 , ,708 .733 . 773 .816 .848 175.3 173.3 -98.1 -79,8 -90.2 -102,5 -116.5 -125.3 -129.2


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PDF
B 773 transistor

Abstract: 2N4403
Text: ALLEGRO MICROSYSTEMS INC T3 D ■050433A QDDBb?! 4 ■ALGR T-91-01 PROCESS DDA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor . It is designed for use as a low-noise, high-gain amplifier or as a medium-power switch. Its , . 2875 B -14 4—40 ALLEGRO MICROSYSTEMS INC 13 D ■G50433Ö G003b72 b ■ALGR T-91-01 PROCESS DDA , JUNCTION CAPACITANCE AS A FUNCTION OF REVERSE BIAS 2876 10 100 COLLECTOR CURRENT IN mA Oag. No. A-13, 773


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PDF 50433A T-91-01 G50433Ã G003b72 T-91-01 -al77 B 773 transistor 2N4403
pin diagram of bf 494 transistor

Abstract: siemens products transistor
Text: SIEMENS SIEGET®25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power , - Line Siemens Grounded Emitter Transistor 25 GHz f j - Line ESD: Electrostatic discharge , 490 AOs Q62702-F1721 1= B 2=E 3=C Package 4=C 5= E SCT-595 Maximum Ratings , /c = 300 mA, VCE = 3 V, f = 0.5 GHz Collector-base capacitance Q; b - 13 “ 15 3.7 , , cP CD Vq B = 2 V, f = 1 MHz 1 MHz Emitter-base capacitance ^eb 1/eb = 0.5V , f = 1 MHz


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PDF Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor
2002 - 2SK3443

Abstract: No abstract text available
Text: (V) Test circuit RG = 25 W VDD = 50 V, L = 773 mH 5 VDS Wave form AS = æ ö 1 B , 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications · · · · Unit: mm Low drain-source ON , current flows into S2 pin. 4 VDD = 50 V, Tch = 25°C (initial), L = 773 mH, RG = 25 W, IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 1 This transistor


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PDF 2SK3443 2SK3443
Not Available

Abstract: No abstract text available
Text: VS T T Figure 27. AD 773 E valuation B oard Schem atic Table IV. Com ponents List R , A D 773 A D V 7122 A D 680 A D 589 74AS04 1 1 1 1 1 F B 1 -F B 3 VIDEO A /D , in ilP o r tb lN b A IIU N o *1 ® AV00 — + 5 V ± 5 % , A V jj — 5 V ± 5 % , D V „„ â , – B ITS ORDERING GUIDE QT 22~| D RV dd BIT 7 [ Ï 7 BIT 6 Q7 BIT 5 MSB ï i ] BIT 1 (MSB) TT| BIT 2 i j ] BIT 3 15~1 B IT « *D - Ceramic D IP . F or outline inform


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PDF 10-Bit AD773 AD773 10-bit,
Not Available

Abstract: No abstract text available
Text: junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set , connected between Cs and ground. The EL lamp is connected between VA and V B . Applications □ W atches , and V B are configured as an H bridge and are switching in opposite states to achieve a minimum of , On-resistance o f switching transistor 15 £2 Idd V DD supply current (excluding HV8051 1.5 , , Rel-qS = 10 MÎ2 C HV8053 V A_ output drive frequency B HV8051 HV8053 »EL Min Typ


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PDF HV8051 HV8053 HV8051P HV8051LG HV8051X HV8053P HV8053LG HV8053X
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/ B Logic level , PowerMOS transistor Logic level FET BUK552-100A/ B P D % N orm alisedP ow er E te ra fin e 1E+01 , 773 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic , Specification PowerMOS transistor Logic level FET BUK552-1G0A/ B 12 t -I - r\vs /M *2 y y y * y s , level field-effect power transistor in a plastic envelope. The device is intended for use in Switched


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PDF BUK552-100A/B BUK552 -100A PINNING-T0220AB BUK552-1G0A/B
1995 - DK 53 code transistor

Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary , specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS DESCRIPTION · Two , Per transistor , for the PNP transistor with negative polarity VCBO collector-base voltage open , specification Transistor complementary pair PUMZ1 LIMITING VALUES In accordance with the Absolute , transistor , for the PNP transistor with negative polarity VCBO collector-base voltage open emitter


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PDF SC70-6 SCD47 113062/1100/01/pp8 DK 53 code transistor transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
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