The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1446IS8 Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1446LCS8#PBF Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1446CN8 Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LTC1446LS8#TR Linear Technology IC DUAL, SERIAL INPUT LOADING, 12-BIT DAC, PDSO8, SOP-8, Digital to Analog Converter
LTC1446LCS8 Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1446CN8#PBF Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C

B 1446 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - schematic diagram CORDLESS DRILL

Abstract:
Text: , respectively, in the 76 and 144.6 MHz transmitters. The Q1 output transistor is a linear amplifier in the 49.7 , Power Output to 60 MHz Using Direct RF Output + 10 dBm Power Output Attainable Using On­Chip Transistor , ) AUXILIARY TRANSISTOR STATIC CHARACTERISTICS Characteristics Symbol Min Typ Max Unit , ) AUXILIARY TRANSISTOR DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (VCE = 3.0 V) Current Gain , 68 p 10 p 68 p 470 p 12 p 20 p 120 p 144.6 MHz 12.05 5.6 0.15 0.10 150 220 k 47 p 10 p


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PDF MC2833/D MC2833 MC2833 schematic diagram CORDLESS DRILL MC2833P .47 uH low power fm transmitter Low power FM transmitter system MC2833 ic M1175-A circuit diagram of 27 mhz transmitter 16 pin ic M1175
1996 - Not Available

Abstract:
Text: A ≅ 0V B : VOUT A ≅ 2.048V C: VOUT A ≅ 4.095V 1446 /46L F02 9 LTC1446/LTC1446L U , Allows Direct Optocoupler Interface Low Cost The LTC ® 1446 /LTC1446L are dual 12 , -BIT DAC B µP 0.5 0.3 – 1 CLK 3 CS/LD 24-BIT SHIFT REG AND DAC LATCH RAIL-TO-RAIL VOLTAGE OUTPUT + 12-BIT DAC A 0.4 VOUT B 8 VOUT A 5 DNL ERROR (LSB) 2 DIN , 1024 1536 2048 2560 3072 3584 4095 CODE 1446 /46L G13 GND 6 1446 /1446L TA01 1 LTC1446


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PDF LTC1446/LTC1446L 12-Bit LTC1446L) LTC1446) 500kHz 1446/LTC1446L LTC1458/LTC1458L
1996 - 8-lead plastic so

Abstract:
Text: C ­4.096 ­8.190 A: VOUT A 0V B : VOUT A 2.048V C: VOUT A 4.095V 1446 /46L F02 9 , Allows Direct Optocoupler Interface Low Cost The LTC ® 1446 /LTC1446L are dual 12 , VOUT A 5 DNL ERROR (LSB) ­ 1 CLK 3 CS/LD 0.4 0.3 12-BIT DAC B µP 0.5 VOUT B 8 , 2560 3072 3584 4095 CODE 1446 /46L G13 GND 6 1446 /1446L TA01 1 LTC1446/LTC1446L W W , .­40°C to 85°C VOUT A /VOUT B . ­0.5V to VCC + 0.5V Maximum Junction


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PDF LTC1446/LTC1446L 12-Bit LTC1446L) LTC1446) 500kHz 1446/LTC1446L LTC1458/LTC1458L 8-lead plastic so 1446l LTC1446 LTC1446L
1996 - 1446

Abstract:
Text: SO-8 May 1996 U DESCRIPTIO FEATURES s s s s s s s s s s ® The LTC 1446 /1446L , Nonlinearity vs Input Code 2 DIN 0.5 + 12-BIT DAC B µP 0.4 VOUTB ­ 1 CLK 3 CS/LD 24 , 1536 2048 2560 3072 3584 4095 CODE POWER-ON RESET 1446 /46L G13 6 1446 /1446L TA01 , 100 0.1 1 10 LOAD CURRENT (mA) 1446 /46L G01 VCC = 3V 660 650 VCC = 2.7V 640 , 5 25 45 65 85 105 125 TEMPERATURE (°C) 1446 /46L G03 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA


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PDF LTC1446/LTC1446L 12-Bit 1446/1446L 12-bit LTC1446L) LTC1446) LTC1446 LTC1454/LTC1454L 1446 B 1446 transistor LTC1446CS8
1996 - B11a

Abstract:
Text: s s s s s s s s s s s The LTC® 1446 /LTC1446L are dual 12-bit digital-to-analog , -BIT DAC B µP 0.5 VOUT B 8 0.2 0.1 0 ­0.1 ­0.2 ­0.3 ­0.4 ­ ­0.5 4 DOUT 0 POWER-ON RESET 512 1024 1536 2048 2560 3072 3584 4095 CODE 1446 /46L G13 GND 6 1446 /1446L TA01 , .­40°C to 85°C VOUT A /VOUT B . ­0.5V to VCC + 0.5V Maximum Junction , NUMBER TOP VIEW CLK 1 8 VOUT B DIN 2 7 VCC CS/LD 3 6 GND DOUT 4 5


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PDF LTC1446/LTC1446L 12-Bit 1446/LTC1446L LTC1446L) LTC1446) LTC4/LTC1454L 16-Lead B11a diode MARKING CODE 930 LTC1446 LTC1446L optocoupler 2560 quad 74HC04 NOT GATE datasheet
2005 - transistor 301

Abstract:
Text: High Voltage Photoflash Capacitor Charger · Designed for use with PNP or NPN Transistor · Operating Temperature : -40°C to +85°C · UL 94V-0 Recognized Components · UL 1446 Class B Insulation System · Very Low Core Loss · Isolation : 500 Vrms Electrical Parameters @ 25° C PCA Part Number Transistor Design , 22.3 22.3 DCR ( Typ.) Pri. .045 .045 Sec.1 301 301 A B Schematic · N : Not Required/No Connection · , .079 (2.00) Side Marking : .012 PCA EPC3225G-X(.300) D.C. .193 (4.90) D2 1.5V + R Schematic B


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PDF EPC3225G-X EPC3225G-1 EPC3225G-2 -320V) EPC3225G-X( CSC3225G-X transistor 301 flyback transformer
2005 - B 1446 transistor

Abstract:
Text: High Voltage Photoflash Capacitor Charger · Designed for use with PNP or NPN Transistor · Operating Temperature : -40°C to +85°C · UL 94V-0 Recognized Components · UL 1446 Class B Insulation System · Very , -1 Voltage (Vdc) Transistor Design PNP or NPN V in EPC3225G-2 320 1.5 Primary OCL @ , Pri. Sec.1 1:240:2.4 22.3 .045 301 A 1:240:N 22.3 .045 301 B , .008 (.203) Schematic B 1 Pri. 3 8 Sec.1 7 Pad Layout .079 (2.00) .067 (1.70


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PDF EPC3225G-X EPC3225G-1 EPC3225G-2 EPC3225G-X( -320V) CSC3225G-X B 1446 transistor flyback layout flyback transformer pin connections 10 pin flyback transformer schematics AMP320 marking 012 transistor B 892 csc3225 B 892 100 kHz flyback transformer
CQ 523

Abstract:
Text: Ordering number: EN5433 _FC157 NPN Epitaxial Planar Silicon Composite Transistor , each individual transistor . Marking: 157 Electrical Connection Package Dimensions 2067A (unit : mm , * Ls .1 10 5 ì 10 2 £ 0 1 o a -T3 O £ ■»i T3 bq B •a o o , 11.573 144.6 0.035 71.3 0.885 -18.7 400 0.540 -64.0 8.744 122.0 0.058 63.0 0.731 -27.7 600 0.400 -83.2 , 144.6 0.102 65.7 0.926 -21.1 600 0.780 -56.2 2.929 128.8 0.138 56.2 0.858 -29.5 800 0.699 -72.0 2.656


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PDF EN5433 FC157 FC157 2SC5245, CQ 523 cq 531 mc 5357 Z0 607 cq 765 NPN/CQ 523 s22L transistor but 607 2SC5245
TRANSISTOR ML6

Abstract:
Text: S B ^ l 0031777 fiSl * A P X NPN 6 GHz wideband transistor BFQ270 , wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T > PINNING PIN â , emitter 4 t s \ , 3 ) 1. . DESCRIPTION Silicon NPN transistor mounted in a , base. 2 M C6 B 89 Top view F ig ,1 S O T 1 7 2 A 1 . It is primarily intended for use , ^31 0031773 10b H A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor


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PDF bb53T31 BFQ270 OT172A1 TRANSISTOR ML6
TRANSISTOR ML6

Abstract:
Text: transistor BFQ270 ^N AMER PHILIPS/DISCRETE b^E » FEATURES • High power gain • Emitter-ballasting , Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads , Its Respective Manufacturer Philips Semiconductors ■bb5 3T31 0031773 1D b H A P X Product specification NPN 6 GHz wideband transistor BFQ270 - N AMER PHIL IPS/DISCRETE blE D LIMITING VALUES In , Tin WM APX Product specification NPN 6 GHz wideband transistor BFQ270 - N AMER PHILIPS/DISCRETE


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PDF DD3177E BFQ270 OT172A1 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips resistor MR25 philips MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor URA746 resistor 240
2009 - MGF4963BL

Abstract:
Text: DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT (High Electron Mobility Transistor ) is , ) 2.6±0.1 Top (0.30) Bottom 0.5±0.1 (2.3) aAA (2.3) (0.30) 3.2±0.1 B , 0.400 174.2 0.370 -165.2 0.360 - 144.6 0.360 -124.3 0.370 -104.1 0.390 -84.4 0.420 -65.3 , -48.9 -64.2 -80.9 -97.6 -115.3 -131.8 -148.0 -163.8 -178.8 163.9 144.6 122.9 101.5 80.4 , ) (ang) -13.2 -26.8 -40.6 -56.1 -70.8 -83.3 -94.6 -104.1 -113.1 -122.9 -132.9 - 144.6 -157.5


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PDF 16/Oct MGF4963BL MGF4963BL 20GHz 4000pcs InGaAs HEMT mitsubishi MGF496 MGF4963B RO4003C
Silicon Bipolar Transistor

Abstract:
Text: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features , fT silicon NPN transistor designed to work at 8 - 12 v olts VCC and with collector currents up to , transistor is designed for use in medium power amplifiers through 3 GHz and oscillators operating from VHF , reliability and ease of chip and wire assembly. This transistor series is also manufactured with silicon , Medium Power, 2 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Maximum Ratings @


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PDF MP4T56800 MP4T568 MP4T56800, Silicon Bipolar Transistor MP4T56800 c 1685 transistor Medium Power Bipolar Transistors S21E S22E
1996 - IC 3263

Abstract:
Text: Silicon Bipolar Transistor Case Style MA4T56800 V2.00 Chip - MA4T56800 Case Style 1170 A DIM. A B , Preliminary Specifications Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor , MA4T568 is a medium power, high fT silicon NPN transistor designed to work at 8 - 12 volts VCC and with , chip transistor is designed for use in medium power amplifiers through 3 GHz and oscillators operating , provide maximum device reliability and ease of chip and wire assembly. This transistor series is also


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PDF MA4T56800 MA4T568 MA4T56800, MA4T56800 MA4T568000 IC 3263 medium power high voltage transistor SILICON npn POWER TRANSISTOR c 869 transistor c 3263
b 595 transistor

Abstract:
Text: Bipolar Transistor Features · High Output Power, 23 dBm PldB @ 1 GHz · High Gain-Bandwidth Product, 4 GHz fT · High Power Gain, I S21E 12 = 12 dB @ 1 GHz G TU (m ax.) = 11 d B @ 2 GHz MA4T56800 V2.00 Description The MA4T568 is a m edium power, high fT silicon NPN transistor designed to work at 8 - 12 volts , ceramic package. This chip transistor is designed for use in m edium pow er amplifiers through 3 GHz and , Silicon Bipolar Transistor Maximum Ratings @+25°c Parameter Col lector-Base Voltage Collector-Emitter


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PDF MA4T56800 MA4T568 MA4T56800, MA4T56800 MA4T568000 b 595 transistor
transistor bc 237c

Abstract:
Text: range Maximum thermal resistance Junction case flthJC 2.5 K/W . BU 204 Vceo Kces *cav / a> 'CM ^ B M , 17E » a^SDO^b 000* 1446 1 AL6G T - 3 3 - (^ Min. Typ. Max. I BU 204 · tsU 205 · BU 206 , ) BEsat < / 2) BEsat U Base-emltter saturation voltage lc = 2 A , / B = 1 A BU 204, BU 205 /c = 2 A ,/a , ^cb = 10 V, f - 1 MHz Fall time /c = 2 A ,/ b = 1 A " t i 5 j *r CCB0 * pF » |JS 1 1The , ; BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor on tape1 1 Additional


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PDF IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
st zo 607

Abstract:
Text: Ordering number:EN5185 _2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp , k ,-1) TO? -29- TÌ - n 1 ! -44- *H* OA. .0-0-1 1*0-6 0- B *1 M—I 1 : Base 2 : Emitter 3 , 5 1.0 5 10 i 1C 16 CQ T3 I U M B -a o e & 00 6 T3 4 & c 2 EL , Freq(MHz) ISH 1 ZSU 1 S2i 1 ¿S2i 1 S12 1 ¿S12 1 S22 1 ¿§22 ZOO 0.725 -37.6 11.573 144.6 0.035 71.3 , 0.978 -11.1 400 0.876 -38.2 3.198 144.6 0.102 65.7 0.926 -21.1 600 0.780 -56.2 2.929 128.8 0.138 56.2


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PDF EN5185 2SC5275 10dBtyp st zo 607 ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor B/B/CQ 643
2001 - S321

Abstract:
Text: -0UR-024B 24V 15 85 SF321-0UR-028B 28V 15 85 SF321-0UR-120A 1.01 ±0.25 3724, 1446 , Center Contact Polarity B = BiPolar AC/DC A = AC only 120º SF321 407,502,3708 1.01 ±0.25 SF321-0UO-006B 5/6V 20 130 3724, 1446 1449,52 SF321-0UO-014B 12/14V 20 SF321 , With S321 Narrow (15º) Beam Intensity 3.5K mcd@20 mA 116 3724, 1446 SF321-0UY-014B 12/14V , 39 SF321-0UY-028B .40 SF321-0UY-120A 120VAC Center Contact Polarity B = BiPolar AC/DC


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PDF SF321-0UR-006B SF321-0UR-014B 12/14V SF321-0UR-024B SF321-0UR-028B SF321-0UR-120A 660nm 120VAC SF321 SF321-0UO-006B S321 SF-3215 SF321 3708 SF321-0UO-006B SF321-0UR-014B
2006 - VARIABLE RESISTOR FOOTPRINTS

Abstract:
Text: National Semiconductor Application Note 1446 Chris Richardson March 2006 Specifications Of , . AN- 1446 © 2006 National Semiconductor Corporation AN201812 www.national.com AN- 1446 , ceramic capacitor placed at Csync. www.national.com 2 AN- 1446 Complete Circuit Schematic , Measurement Setup 3 www.national.com AN- 1446 Connection Diagrams (Continued) 20181209 , 6. Switch Node Voltage (VIN = 12V, VO = 1.2V, IO = 5A) www.national.com 4 AN- 1446


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PDF LM3495 62mil CSP-9-111S2) CSP-9-111S2. AN-1446 VARIABLE RESISTOR FOOTPRINTS C3225X5R1E226M SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A RLF12560T-1R0N140 MBR0530 HAT2198R HAT2165H AN-1446
S321

Abstract:
Text: Based LEDs 407,502,3708 1.01 ± 0 .2 5 - SF321-OUR-006B Center C ontact Polarity B = BiPolar AC , Center C ontact Polarity B = BIPolar AC/DC A = AC only Replace SF321 With S321 Narrow (15°) Beam Intensity 3.5K m cd@ 20 mA < - 1.01 ± 0 . 2 5 - > 3724, 1446 1449,52 SF321 , Super Yelli InGaAlP 407.502,3708 3724, 1446 1449,52 SF321-0UY-006B SF321-0UY-014B SF321 , 39 C enter C ontact Polarity B = BiPolar AC/DC A = AC only Replace SF321 W ith S321 Narrow (15


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PDF 660nm 612nm T3-114 SF321-OUR-006B SF321 cd/52 SF321-0U O-014B S321
transistor b 595

Abstract:
Text: Volt, High fT NPN Silicon Bipolar Transistor Features · High O utput Power, 23 dBm PldB @ 1 GHz · , 2 GHz Description The MA4T568 is a medium power, high fT silicon NPN transistor designed to w , , for use in hybrid applications as an amplifier or moderate pow er oscillator. It can also b e supplied in a common collector ceramic package. This chip transistor is designed for use in medium pow er , , High fT NPN Silicon Bipolar Transistor Maximum Ratings @ +25°c Parameter Collector-Base Voltage


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PDF MA4T56800 MA4T568 MA4T56800, operati8761 MA4T56800 MA4T568000 transistor b 595
NT 407 F transistor

Abstract:
Text: 500 mAdc T 0 -2 2 0 A B Compact Package NPN M JE15030* PNP M JE15029* M JE15031* ` M o to ro la , 120 Vdc, l£ = 0) (Vqb = 150 Vdc, lE = 0) Emitter Cutoff Current (V b e = 5.0 Vdc, lc = 0) ON , Bipolar Power Transistor Device Data MJE15028 MJE15030 MJE15029 MJE15031 There are two limitations on the power handling ability of a transistor : average junction temperature and second break down. Safe operating area curves indicate Iq - V q e limits of the transistor that must be observed for reliable


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PDF MJE15028/D JE15028* MJE15028, MJE15029 MJE15030, MJE15031 JE15030* JE15029* JE15031* NT 407 F transistor NT 407 F power transistor JE15030 JE15031 JE15029 MJE15031 transistor MJE15028-D transistor mje15028 MJE15028 Transistor
2007 - RD02MVS1

Abstract:
Text: RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8 , a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications , ,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE , RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS DRAIN , OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W


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PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 6D20 mosfet 1412 mosfet 4501 T112
2012 - RX62T

Abstract:
Text: ). 199 Module Stop Control Register B (MSTPCRB


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PDF RX62T 32-Bit RX600 R01UH0034EJ0130 210EH 752 BY100 dts HD 7.1 M 212EH 844 64P6QA NFE 02 352 OM 1654 PLQP0064-KB-A MPSA 506 transistor
2SC5109

Abstract:
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC5109 FOR VCO APPLICATION 2SC5109 SYMBOL VCBO VCEO Ve b o : B ic PC Tj Tstg RATING 20 10 3 30 60 150 125 -5 5 -1 2 5 SILICON NPN EPITAXIAL PLANAR TYPE , . MAX. UNIT VCB = 10V, IE = 0 0.1 /¿A 0.1 /¿A - - v E b = i v , i c -o V c e -5 V , Iq = 5mA 80 - , , Ie = 0, f = 1MHz (Note 2) - 0.5 0.9 pF V c b = 5V, IC = 3mA, f=30MHz - 5.5 10 ps - - (Note 1 , il Ang. -6 7 .7 -1 1 1 .7 -1 3 9 .8 -1 5 9 .8 -1 7 5 .0 171.9 161.7 152.1 144.6 138.5 Mag


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PDF 2SC5109 SC-59 2SC5109
Not Available

Abstract:
Text: TO SHIBA 2SC5110 TOSHIBA TRANSISTOR 2 S SILICON NPN EPITAXIAL PLANAR TYPE C 5 , 1.25±0.1, SYMBOL RATING UNIT VCBO VCEO Ve b o lB 20 10 3 30 60 100 125 -5 5-125 , TEST CONDITION Collector Cut-off Current v C B = io v , IE = 0 !CBO Emitter Cut-off Current v Eb , Constant Cc.rbb’ V c b = 5V, Ic = 3mA, f=30M H z (Note 1) (Note 2) MIN. TYP. MAX. UNIT — â , 144.6 138.5 Mag. 9.526 6.393 4.611 3.599 2.990 2.556 2.252 2.011 1.845 1.691 S12 Ang


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PDF 2SC5110 SC-70
Supplyframe Tracking Pixel