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Part Manufacturer Description Datasheet Download Buy Part
LTC6993HS6-1#TRPBF Linear Technology LTC6993 - TimerBlox: Monostable Pulse Generator (One Shot); Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C
LTC6993IS6-2#TRPBF Linear Technology LTC6993 - TimerBlox: Monostable Pulse Generator (One Shot); Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC6993CS6-3#TRPBF Linear Technology LTC6993 - TimerBlox: Monostable Pulse Generator (One Shot); Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6993HS6-4#TRPBF Linear Technology LTC6993 - TimerBlox: Monostable Pulse Generator (One Shot); Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C
LTC6993MPS6-3#TRMPBF Linear Technology LTC6993 - TimerBlox: Monostable Pulse Generator (One Shot); Package: SOT; Pins: 6; Temperature Range: -55°C to 125°C
LTC6993CS6-4#TRMPBF Linear Technology LTC6993 - TimerBlox: Monostable Pulse Generator (One Shot); Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C

Avalanche Transistor Circuits for Generating Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2N2369 AVALANCHE PULSE GENERATOR

Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
Text: . H. Shaver, P. G. Griffith, " Avalanche Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December, 1962. 13. R. B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits , Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 IRE-AIEE Solid State Circuits Conference, Philadelphia, PA., February 1958. 10. Motorola, Inc., " Avalanche , calibrated. Q5 requires selection for optimal avalanche behavior. Such behavior, while characteristic of


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PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
1999 - 2N2369 Spice

Abstract: HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 HP1120A 2N2369 avalanche nanosecond pulse stretcher nanosecond pulse generator Avalanche Transistor Circuits for Generating AN793 motorola
Text: , " Avalanche Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December, 1962. 26. R. B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits ," Technical Report No. 1653-1 , Edition, Wiley Interscience, 1977. 30. G. B. B. Chaplin, "A Method of Designing Transistor Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 IRE-AIEE , AN79 FA01 TO HORIZONTAL CIRCUITS Figure A1. Simplified Vertical Channel Diagrams for Different


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PDF AN79-31 AN79-32 an79f 2N2369 Spice HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 HP1120A 2N2369 avalanche nanosecond pulse stretcher nanosecond pulse generator Avalanche Transistor Circuits for Generating AN793 motorola
2009 - 2N2369 avalanche

Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA CTX-02-16004 P-6056 motorola transistor handbook crystal generator 1GHz 2N3866 application note
Text: , F Shaver, P Griffith, " Avalanche .H. .G. Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December 1962. 8. R.B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits ," , . 14. G. B. B. Chaplin, "A Method of Designing Transistor Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 IRE-AIEE Solid State Circuits Conference , . Motorola Transistor Handbook, 1963. 16. Williams, Jim, "A Seven-Nanosecond Comparator for Single Supply


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PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA CTX-02-16004 P-6056 motorola transistor handbook crystal generator 1GHz 2N3866 application note
TP12N10

Abstract: je210 MJF16206 desaturation design 1200 volt npn ex 3863 MUR8100E MTP8P10 MPF930 MJW16206
Text: Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors. POWER TRANSISTORS 12 , . Safe operating area curves indicate lc - Vq e limits of the transistor that must be observed for , 3-862 Motorola Bipolar Power Transistor Device Data MJW16206 TEST CONDITIONS FOR ISOLATION TESTS


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PDF MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn ex 3863 MUR8100E MTP8P10 MPF930
ex 3863

Abstract: MJf16206
Text: circuits for high and very high resolution, monochrome and color CRT monitors. · 1200 Volt Vc e S Breakdown , For High Voltage Off Drive Circuits - 8.0 V (Min) MAXIMUM RATINGS Rating Collector-Emitter Breakdown , operating area curves Indicate Iq - Vc e HmKs of the transistor that must be observed for reliable operation , 3-862 Motorola Bipolar Power Transistor Device Data M JW 16206 TEST CONDITIONS FOR ISOLATION , Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art


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PDF MJF16206 MJW16206 AN1040. ex 3863
transistor rc 3866

Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
Text: power transistor . It is specifically designed for use in horizontal deflection circuits for 20 mm , Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min) MAXIMUM RATINGS Rating , observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa tion than , hor izontal deflection circuits In computer monitor applications. Historically, deflection transistor , M H w H M llD N I M P I M M U m M JM M M I SCANSWITCHTM NPN Bipolar Power Deflection Transistor


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PDF MJW16212 AN1040. transistor rc 3866 t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
MPSG1000

Abstract: mpsg10 AN1076 MJH16206 1076 transistor
Text: two ways to speed up a horizontal output stage. One is to design the transistor specifically for the , source, with a compliance voltage high enough to avalanche the output transistor 's base-emitter junction , and Lp are not chosen in this way, either enough energy to adequately avalanche the output transistor , gain to operation at 6 amps gives a base current of 1.4 amps. For this transistor Eg{0ff) is specified , the output transistor 's device physics and work back to the horizontal oscillator. The base drive


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PDF AN1076/D AN1Q76/D AN1076/D MPSG1000 mpsg10 AN1076 MJH16206 1076 transistor
uis test

Abstract: ZXMN20B28K Avalanche Transistor Circuits for Generating TO252-3L ZXMN6A25N8 ZXMN15A27K TIP 298 ZXMN10A11K ZXMN10A11G ZXMN10A08G
Text: MOSFETs optimised for Voice over Internet Protocol (VoIP) Diodes Incorporated has extended its family of MOSFETs tailored for VoIP communication equipment. The ZXMN20B28K and ZXMN15A27K are avalanche rugged and designed for driving transformers in the DC-DC converter stage of Subscriber Line Interface Circuits (SLIC). These MOSFETs combined with a transformer allow a wide range of battery voltage (VBAT , compliant and contain no halogens or antimony compounds. Circuit Function For generating the VBAT


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PDF ZXMN20B28K ZXMN15A27K ZXMN20B28K ZXMN15A27K ZXMN6A25N8 ZXMN6A08G OT223 ZXMN6A08E6 OT23-6 ZXMN6A11G uis test Avalanche Transistor Circuits for Generating TO252-3L ZXMN6A25N8 TIP 298 ZXMN10A11K ZXMN10A11G ZXMN10A08G
2000 - zener 9A2

Abstract: 9A2 zener diode uis test power technics AR598 AN784 AN843
Text: data for safe designs. The short­term avalanche capability will be discussed with an insight of the , . The necessity for avalanche rugged power semiconductors has clearly been perceived by many , reliability. The energy is first stored in inductor L by turning on transistor Q for a period of time , DUT. For low breakdown voltage devices, a MOSFET might be preferred to the bipolar transistor . The , . Maximum Peak Current versus Avalanche Duration for a 15 A, 60 V MOSFET in an UIS Test Circuit. The


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PDF AR598 r14525 AR598/D zener 9A2 9A2 zener diode uis test power technics AR598 AN784 AN843
2000 - 9A2 zener diode

Abstract: zener 9A2 Avalanche Transistor Circuits for Generating power technics uis test
Text: the failure mechanisms leads to a new characterization method generating easy-to-use data for safe , of power semiconductors that are not intended to be used in avalanche . The necessity for avalanche , (UIS) test circuit (Fig 1). The energy is first stored in inductor L by turning on transistor Q for a , devices can sustain a low current for a long period of time (high energy) but at high avalanche currents , the transistor has to have a breakdown voltage higher than the DUT. For low breakdown voltage devices


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PDF AR598 AN843 AN784 9A2 zener diode zener 9A2 Avalanche Transistor Circuits for Generating power technics uis test
RECTIFIER DIODE 5A, 2500V VRRM

Abstract: DO220 transistor smps high voltage Diode BYT42 M byv26 smd MARK smd diode general semiconductor telefunken rr 100 byv26 tunnel diode photo thyristor
Text: : radiation generating R THYRISTOR: low power S TRANSISTOR : low power, switching T THYRISTOR , from 100 to 9999 for devices F TRANSISTOR : low power, high frequency G DIODE: oscillator , for SMPs (e.g. BYT42), damper and modulator diodes for the deflection circuits in CRTs (e.g. BY228 , . capital letters are used for the representation of external circuits of which the device is only a part , Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device


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IR6000

Abstract: IR-6000
Text: DMOS transistor body diode) to assure very rapid inductive current decay and a guaranteed avalanche , Output Current vs. Load Inductance for Single Pulse Avalanche Operation (Vcc = 14V) IR6000 IR6000 , . During norm al 4055452 0021384 403 ■The charge pum p starts generating gate voltage for , speed circuits for inductive loads without the use o f freewheeling diodes. Figure 18 shows the , □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The


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PDF IR6000 IR6000 goes31, D-6380 005136b IR-6000
1995 - MJ11016 equivalent

Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration MJF16206 726 MOTOROLA TRANSISTORS MC1391 MJ11016 NPN 200 VOLTS 20 Amps POWER TRANSISTOR using of damper in Horizontal Output Transistor vce 1200 and 5 amps transistor
Text: designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min , indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the , : GAPPED FOR LP = 30 µH VCE LB Q4 SCANSWITCH HORIZ OUTPUT TRANSISTOR LB = 0.5 µH CY = 0.01 , Motorola Bipolar Power Transistor Device Data 20 MJW16206 TEST CONDITIONS FOR ISOLATION TESTS


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MC1391 MJ11016 NPN 200 VOLTS 20 Amps POWER TRANSISTOR using of damper in Horizontal Output Transistor vce 1200 and 5 amps transistor
1996 - 1811P3C8

Abstract: TO247AE MJF16206 MDC1000 120C4 MUR8100E MUR8100 MTP8P10 MR856 2n533
Text: designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to , deflection circuits in computer monitor applications. Historically, deflection transistor design was focused , SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 TO247AE MDC1000 120C4 MUR8100E MUR8100 MTP8P10 MR856 2n533
1996 - 2N5337

Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min) Î Î Î Î Î Î Î Î , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to , deflection circuits in computer monitor applications. Historically, deflection transistor design was focused , SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E
1996 - 1811P3C8

Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to , deflection circuits in computer monitor applications. Historically, deflection transistor design was focused , SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E
2001 - MDC1000A

Abstract: 1811P3C8 MDC1000 MJF16206 MJW16206 2N6191 MTP8P10 MUR8100E MJ11016 equivalent mtp3055
Text: . They are specifically designed for use in horizontal deflection circuits for high and very high , observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than , ON Semiconductort MJW16206 SCANSWITCHt NPN Bipolar Power Deflection Transistors For High , Desaturation Specified (New Turn­Off Characteristic) · Maximum Repetitive Emitter­Base Avalanche Energy , 0.25 Volts (Typ) at 6.5 Amps Collector Current · High Emitter­Base Breakdown Capability For High


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PDF MJW16206 MJF16206 MJW16206 r14525 MJW16206/D MDC1000A 1811P3C8 MDC1000 2N6191 MTP8P10 MUR8100E MJ11016 equivalent mtp3055
1996 - EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 MJF18006 MJF18004 MJF18002 MJE18008 MJE18006 MJE18004 MJE18002 transistor mjw16212
Text: Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor . It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , Drive Circuits - 8.0 Volts (Min) *Motorola Preferred Device POWER TRANSISTOR 10 AMPERES 1500 , operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable


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PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MJF18006 MJF18004 MJF18002 MJE18008 MJE18006 MJE18004 MJE18002 transistor mjw16212
1995 - EQUIVALENT FOR mjf18004

Abstract: MJF18006 MJF18004 MJF18002 MJE18008 MJE18006 MJE18004 MJE18002 MJ11016 MC1391P
Text: Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor . It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , Drive Circuits - 8.0 Volts (Min) *Motorola Preferred Device POWER TRANSISTOR 10 AMPERES 1500 , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to


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PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MJF18006 MJF18004 MJF18002 MJE18008 MJE18006 MJE18004 MJE18002 MJ11016 MC1391P
MJF16206

Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 IMUR8100 078F
Text: Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJH16206 are state-of-the-art SWITCHMODE III bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors. • 1200 Volt Vqes , Emitter-Base Breakdown Capability For High Voltage Off Drive Circuits — 8.0 V (Min) MAXIMUM RATINGS , curves indicate Iq—Vce limits of the transistor that must be observed for reliable operation; i.e., the


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PDF b3b7254 1-33-OI MJF16206/D MJF16206 MJH16206 AN1040 MJF16206 MJH16206 MJW16206 MTP12N10 pin configuration transistor D 1557 K1194 MPF930 TMJE210 IMUR8100 078F
2001 - MC1391

Abstract: MJW16212 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856
Text: power transistor . It is specifically designed for use in horizontal deflection circuits for 20 mm , ON Semiconductort MJW16212 * SCANSWITCHTM NPN Bipolar Power Deflection Transistor For High , High Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min , observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than , subjected to an avalanche mode. Figure 2 gives the RBSOA characteristics. For inductive loads, high


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PDF MJW16212 MJW16212 r14525 MJW16212/D MC1391 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856
2002 - smps circuit diagram of 300W

Abstract: layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps AN-CoolMOS-04 07n60 mosfet circuit diagrams 07N60 ZVT Full bridge transformer IGBT 500 Watt Phase Shifted ZVT Power Converter infineon cool MOSFET dynamic characteristic test H-bridge 24 VOLT 80 AMP smps
Text: Avalanche Rating and the VBE junction potential decreases. For this reason, though a MOSFET transistor may , transistor . Application Note 23 V1.0, 2001-04 Introduction to Avalanche Considerations for , n k i n g . Introduction to Avalanche Considerations for CoolMOSTM in SMPS Applications , V1.0, 2001-04 Introduction to Avalanche Considerations for CoolMOSTM in SMPS Applications , issues for SMPS, including circuit issues involved in repetitive avalanche in power supplies, and how


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PDF AN-CoolMOS-04 2002-Sep. smps circuit diagram of 300W layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps AN-CoolMOS-04 07n60 mosfet circuit diagrams 07N60 ZVT Full bridge transformer IGBT 500 Watt Phase Shifted ZVT Power Converter infineon cool MOSFET dynamic characteristic test H-bridge 24 VOLT 80 AMP smps
Not Available

Abstract: No abstract text available
Text: . Application Note Avalanche Guarantee for Power MOS FET Document No. D18464EJ2V0AN00 (2nd edition) Date , responsibility for any losses incurred by customers or third parties arising from the use of these circuits , (IAV<2>) which has been amplified by the parasitic transistor flows to the collector side, generating , D18464EJ2V0AN Figure 11. Example of Conditions for Screening Avalanche Capability Ratings in Production , such as that disclosed through our website. Renesas Electronics does not assume any liability for


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PDF G0706
1998 - HP8180A

Abstract: SN74HC595 TPIC6595 gate-drain zener
Text: susceptibility of generating RFI due to the need for an internal oscillator. An oscillator provides little , avalanche time for a starting junction temperature of 25°C. 4­9 10 IAS ­ Peak Avalanche Current ­ , , versus avalanche time for the device, tav . The equation, V = L di/dt, can be used to relate this , transistor . A feature of power integrated circuits that is often neglected is their ability to conduct , page for generating the example 16-bit timing diagram explained above is listed in Table 3. 4­22


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PDF TPIC6595 SPLA004A HP8180A SN74HC595 gate-drain zener
2002 - tda 16833

Abstract: rs-flip-flop block diagram TDA 16831 TDA16831
Text: since last revision) Update of available types. Document's layout has been changed: 2002-Sep. For , circuits , descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact , worldwide. Warnings Due to technical requirements components may contain dangerous substances. For , -8-6 for Applications with POUT 40 W: TDA 16831/2/3/4 . . . . . . . P-DSO-14-11 for Applications with POUT


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PDF 2002-Sep. tda 16833 rs-flip-flop block diagram TDA 16831 TDA16831
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