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Part Manufacturer Description Datasheet Download Buy Part
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

AVALANCHE TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - ZTX415

Abstract: AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
Text: Application Note 8 Issue 2 January 1996 The ZTX415 Avalanche Mode Transistor An Introduction , / high current pulse generators. The Zetex Semiconductors ZTX415 is an avalanche transistor that , Characteristics in the Avalanche Region. What Is An Avalanche Transistor ? Avalanche transistors are , the important parameters of an avalanche mode transistor with particular reference to the ZTX415 , voltage characteristic of the avalanche device, e.g. to obtain a high voltage pulse the transistor must


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PDF ZTX415 NS-25, AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
2014 - K1 transistor

Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current (Pulse width , : Level 1 per J-STD-020 • Specifically designed for Avalanche mode operation • â , Reliability Applications Description • The FMMT413 is an NPN silicon planar bipolar transistor , Adaptive Cruise Control operating in avalanche mode. Tight process control and low Collision


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PDF FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor
AVALANCHE TRANSISTOR

Abstract: ZTX325 ZTX327 ZTX415 ZTX320 ZTX321 ZTX322 ZTX323
Text: 500 'Typical. TABLE 15: NPN AVALANCHE TRANSISTOR Specifically designed to operate in the avalanche


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PDF ZTX327 350mW ZTX320 ZTX321 ZTX322 ZTX323 ZTX325 175mW AVALANCHE TRANSISTOR ZTX415
2014 - Not Available

Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current (Pulse width = 20ns) BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded , • • Specifically designed for Avalanche mode operation • • Totally Lead-Free , €¢ Automotive Radar Systems designed for operating in avalanche mode. Tight process control and Adaptive


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PDF FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084
AVALANCHE TRANSISTOR

Abstract: ZTX415 ZTX327
Text: 200 500 TABLE 15: NPN AVALANCHE TRANSISTOR Specifically designed to operate in the avalanche mode


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PDF ZTX327 ZTX320 ZTX322 ZTX323 ZTX325 ZTX415 AVALANCHE TRANSISTOR
Transistor 2N3866

Abstract: ZTX415 ZTX327 ZTX323 ZTX321 AVALANCHE TRANSISTOR ZTX320 ZTX322 Scans-00107843 2N3866
Text: 500 'Typical. TABLE 15: NPN AVALANCHE TRANSISTOR Specifically designed to operate in the avalanche


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PDF ZTX327 350mW ZTX320 ZTX321 ZTX322 ZTX323 ZTX325 175mW OT-23 2N4427 Transistor 2N3866 ZTX415 AVALANCHE TRANSISTOR Scans-00107843 2N3866
2006 - FMMT413

Abstract: FMMT413TA FMMT413TD
Text: FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving. Features C · Avalanche mode operation · 50A peak avalanche current · Low inductance packaging B E Applications ·


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PDF FMMT413 FMMT413 FMMT413TD FMMT413TA FMMT413TA FMMT413TD
2006 - Not Available

Abstract: No abstract text available
Text: FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving. Features C • Avalanche mode operation • 50A peak avalanche current • Low inductance packaging B E Applications


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PDF FMMT413 FMMT413 FMMT413TD FMMT41ia
2003 - PULSED LASER DIODE DRIVER

Abstract: IXDD415SI PCO-7120 12E9S DE150 . LIDAR for LASER RANGE FINDER 7120 DE-150 Directed Energy
Text: switching element. Unlike avalanche transistor drivers, the power MOSFET of the PCO-7120 is not operated , the drain of the output transistor . The diode must be electrically isolated from earth (chassis , transistor , and to simplify mounting or installation of the driver. Ordering Information: · The PCO


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PDF PCO-7120 200ns PULSED LASER DIODE DRIVER IXDD415SI 12E9S DE150 . LIDAR for LASER RANGE FINDER 7120 DE-150 Directed Energy
VHF Transistors

Abstract: ZTX325 FMMT5088 BC860C BC860B BC860A BC850C BC850B BC849C BC849B
Text: 0.2/5 300 BC859C 30 30 100 350 420/800 2/5 4 0.2/5 300 AVALANCHE TRANSISTOR (NPN) hFE at Peakt , operate in the avalanche tMaximum pulse width 20nsec. mode. Suitable for pulsing laser diodes and other


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PDF OT-23 FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 BC860A VHF Transistors ZTX325 BC860C BC860B
PCO-7120

Abstract: PCA-9145
Text: IC as the main switching element. Unlike avalanche transistor drivers, the power MOSFET of the PCO , of the output packages and mounting preferences, there are two solder transistor . The diode must be , switching transistor , and to simplify mounting or installation of the driver. Technical Overview The


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PDF PCO-7120 500mA PCO-7120 103mm PCA-9145: PCA-9245 PCA-9145
2000 - PCA-9140

Abstract: HORIZONTAL DRIVER TRANSISTOR EG*G Optoelectronics PCA-9210 1nS pulse width circuit PCO-7110 for LASER RANGE FINDER . LIDAR LIDAR model TRANSISTOR mosfet 40A
Text: . Unlike avalanche transistor drivers, neither the power MOSFET or the gate drive transistor of the PCO


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PDF 50KHz PCO-7110, PCO-7110 PCA-9140 10ns/Div HORIZONTAL DRIVER TRANSISTOR EG*G Optoelectronics PCA-9210 1nS pulse width circuit for LASER RANGE FINDER . LIDAR LIDAR model TRANSISTOR mosfet 40A
laser diode 905nm

Abstract: E1311 narrow pulse width circuit LIDAR trigger module perkin 225nm hybrid HV modules 1FW transistor hv circuit perkin
Text: a high speed avalanche transistor . The transistor is triggered by a user-supplied TTL base signal


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PDF 850nm 905nm 1550nm mils/75 6mi1s/150nm 9rnils/225nm 12tnils/300pm laser diode 905nm E1311 narrow pulse width circuit LIDAR trigger module perkin 225nm hybrid HV modules 1FW transistor hv circuit perkin
2003 - CW 7810

Abstract: pco-7810 PCA-9145 400 high voltage switch model laser power PCO-7810-40-5 transistor 7810 7810 nanosecond pulse generator LIDAR model PULSED LASER DIODE DRIVER
Text: avalanche transistor drivers, neither the power MOSFET or the gate drive transistor of the PCO-7810 are


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PDF PCO-7810 200KHz PCO-7810, PCA-9145 CW 7810 400 high voltage switch model laser power PCO-7810-40-5 transistor 7810 7810 nanosecond pulse generator LIDAR model PULSED LASER DIODE DRIVER
2003 - 2N2369 AVALANCHE PULSE GENERATOR

Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
Text: Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 , . H. Shaver, P. G. Griffith, " Avalanche Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December, 1962. 13. R. B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits , is settable from before-to-after a trigger output. This circuit uses an avalanche pulse generator to , further discussion and recommendations. Note 4: Additional examples of avalanche pulse generators and


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PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
1999 - 2N2369 Spice

Abstract: HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 HP1120A 2N2369 avalanche nanosecond pulse stretcher nanosecond pulse generator Avalanche Transistor Circuits for Generating AN793 motorola
Text: , " Avalanche Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December, 1962. 26. R. B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits," Technical Report No. 1653-1 , Edition, Wiley Interscience, 1977. 30. G. B. B. Chaplin, "A Method of Designing Transistor Avalanche , Avalanche Switching Circuit Utilizing Double-Diffused Silicon Transistors," Fairchild Semiconductor, Application Note 8/2 (December 1961) 31. Motorola, Inc., " Avalanche Mode Switching," Chapter 9, pp


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PDF AN79-31 AN79-32 an79f 2N2369 Spice HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 HP1120A 2N2369 avalanche nanosecond pulse stretcher nanosecond pulse generator Avalanche Transistor Circuits for Generating AN793 motorola
2009 - 2N2369 avalanche

Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA CTX-02-16004 P-6056 motorola transistor handbook crystal generator 1GHz 2N3866 application note
Text: , F Shaver, P Griffith, " Avalanche .H. .G. Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December 1962. 8. R.B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits," , . 14. G. B. B. Chaplin, "A Method of Designing Transistor Avalanche Circuits with Applications to a , includes a paralleled, Darlington driven RF transistor output stage. The collector voltage adjustment , TRANSISTOR WITH 22F SANYO OSCON PARALLELED WITH 2.2F MYLAR Q3 Q6 1 AN122 F05 Figure 5. Pulse


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PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA CTX-02-16004 P-6056 motorola transistor handbook crystal generator 1GHz 2N3866 application note
2007 - 16f73

Abstract: 74ACH14 cd4040 application note 16f73 rs232 74ACH74 LT1150 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic
Text: Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 , ., " Avalanche Mode Switching," Chapter 9, p. 285-304. Motorola Transistor Handbook, 1963. 20. Williams, Jim , . Hamilton, F H. Shaver, P G. Griffith, " Avalanche . . Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December 1962. 22. R. B. Seeds, "Triggering of Avalanche Transistor , 's circuit operates similarly to FET-based Figure 2, although the bipolar transistor 's normally off


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PDF an113f AN113-19 AN113-20 16f73 74ACH14 cd4040 application note 16f73 rs232 74ACH74 LT1150 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic
2000 - ICE2xXXX

Abstract: transformer calculation excel siemens GR 40 rectifier siemens GR 60 rectifier AVALANCHE TRANSISTOR ICE2A765 230V INPUT AND 48V 10A OUTPUT SMPS ICE2B365 vfd circuit diagram for siemens flycal
Text: safe value this limits the avalanche losses of the CoolMOS AN-SMPS-ICE2xXXX-1 transistor , cycle (D) of the integrated CoolMOS Transistor is controlled to maintain a constant output voltage , ) transformer currentof the flyback converter depicted on p. 3 When the CoolMOS Transistor is swiched on , linear increase of the primary current (IPRI) while the CoolMOS Transistor is on. When the CoolMOS Transistor is swiched off, the voltage reverses on all transformer windings (flyback action) until it is


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PDF Room14J1 Room1101 ICE2xXXX transformer calculation excel siemens GR 40 rectifier siemens GR 60 rectifier AVALANCHE TRANSISTOR ICE2A765 230V INPUT AND 48V 10A OUTPUT SMPS ICE2B365 vfd circuit diagram for siemens flycal
2002 - smps circuit diagram of 300W

Abstract: layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps AN-CoolMOS-04 07n60 mosfet circuit diagrams 07N60 ZVT Full bridge transformer IGBT 500 Watt Phase Shifted ZVT Power Converter infineon cool MOSFET dynamic characteristic test H-bridge 24 VOLT 80 AMP smps
Text: Avalanche Rating Avalanche energy capability is the measure of a transistor 's ability to handle energy in the drain to source avalanche breakdown mode, in which the transistor acts ideally as a high power , Avalanche Rating and the VBE junction potential decreases. For this reason, though a MOSFET transistor may , Transistor Selection Topology Avalanche possible? CoolMOSTM PFC Boost Converter No 600 V , must be dissipated on the primary side by the power transistor in avalanche , or by additional


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PDF AN-CoolMOS-04 2002-Sep. smps circuit diagram of 300W layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps AN-CoolMOS-04 07n60 mosfet circuit diagrams 07N60 ZVT Full bridge transformer IGBT 500 Watt Phase Shifted ZVT Power Converter infineon cool MOSFET dynamic characteristic test H-bridge 24 VOLT 80 AMP smps
4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 D 843 Transistor Power MOSFETs Transistor irf230 h a 431 transistor n-channel 4336 742r MOSFET IRF460
Text: Power Field-Effect Transistor . N-Channel Enhancement-Mode Power MOS Field-Effect Transistor . N-Channel Enhancement-Mode Power MOS Field-Effect Transistor . N-Channel Enhancement-Mode Power Field-Effect Transistor . N-Channel Enhancement-Mode Power MOS Field-Effect Transistor . N-Channel Enhancement-Mode Power MOS Field-Effect Transistor . N-Channel Enhancement-Mode Power MOS Field-Effect Transistor


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PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 D 843 Transistor Power MOSFETs Transistor irf230 h a 431 transistor n-channel 4336 742r MOSFET IRF460
1995 - AN601

Abstract: SMP30N10 john worman bipolar transistor tester
Text: transistor . The semiconductor industry defines this ruggedness as the capability to withstand avalanche , active or passive. The first, or active mode, results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode, results when the instantaneous chip , parasitic npn bipolar transistor and causes catastrophic thermal runaway. In either case, the MOSFET is , avalanche currents. Symbols and Definitions Whenever possible, symbols and definitions established by


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PDF AN601 ED-29, HDL-TR-1978 AN601 SMP30N10 john worman bipolar transistor tester
2001 - mosfet schematic solenoid driver

Abstract: AN-7515 RFP70N06 ronan
Text: temperature at the start of the UIS pulse (TJ) and the time the transistor remains in avalanche (tAV). It , transistor (see Figure 1) is presented as a chart with a vertical axis of (IAS) maximum avalanche current , PowerMOS transistor data sheets can be applied to a wide range of applications very easily and expanded , transistor users to determine if their application lies within the rated capability of a power transistor , the condition specified and the PowerMOS transistor user has no way to calculate whether the


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PDF
2002 - RFP70N06

Abstract: AN75 AN-7515 AN9322
Text: the PowerMOS transistor (IAS), the emi- junction temperature at the start of the UIS pulse (TJ) and the time the transistor remains in avalanche (tAV). It allows onuctor, the easy determination of the , transistor user has no way to calculate whether the particular application ysexceeds the device rating , PowerMOS transistor (see Figure 1) is presented as a chart with a vertical axis of (IAS) maximum avalanche current vs (tAV) time in avalanche as the horizontal axis. Two lines are shown, one for 25oC and


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PDF
5510E UIS tester

Abstract: bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
Text: the critical avalanche current required to excite the parasitic bipolar transistor . Blackburn[8 , . Dunning The evolution of the power MOSFET has resulted in a very rugged transistor . The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to , current reached during avalanche tAV the time duration of the avalanche phenomenon L the value of , labelled as either active or passive. The first, or active mode, results when the avalanche current


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PDF AN601 15-Feb-94 5510E UIS tester bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
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