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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

AV smd transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - transistor 2N2222 SMD

Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor ACPR600 TRANSISTOR SMD L3 78L08 w2 smd transistor
Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , common source class-AB test circuit. Mode of operation f VDS PL PL( AV ) Gp D ACPR400 ACPR600 , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6


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PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 78L08 w2 smd transistor
2007 - capacitor 2200 uF

Abstract: transistor 2N2222 SMD R10 smd BLF4G10-160 ACPR750 ACPR600 ACPR400 ACPR1980 78L08 2N2222
Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , common source class-AB test circuit. Mode of operation f VDS PL PL( AV ) Gp D ACPR400 ACPR600 , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6


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PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 78L08 2N2222
2008 - 30RF35

Abstract: VJ1206Y104KXB smd transistor equivalent table
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , ] [2] f (MHz) 2500 to 2700 VDS PL( AV ) (V) 32 (W) 20 PL(p) Gp (W) 200 16 D ACPR885k , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
2010 - BLF6G22LS-100

Abstract: RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 - 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL( AV ) D IMD3 ACPR (dB) (%) (dBc , Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol


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PDF BLF6G22LS-100 BLF6G22LS-100 RF35
2010 - SmD TRANSISTOR a41

Abstract: No abstract text available
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 18.2 [1] VDS PL( AV ) Gp ηD IMD3 ACPR (% , -100 NXP Semiconductors Power LDMOS transistor 1.3 Applications ̈ RF power amplifiers for W-CDMA , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless


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PDF BLF6G22LS-100 SmD TRANSISTOR a41
2010 - transistor D 1002

Abstract: BLF6G22LS-100 RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 02 - 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL( AV ) D IMD3 ACPR (dB) (%) (dBc , Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 , . 2010. All rights reserved. 2 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor


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PDF BLF6G22LS-100 BLF6G22LS-100 transistor D 1002 RF35
2008 - BLF6G22LS-100

Abstract: RF35 TRANSISTOR SMD BV
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL( AV ) Gp D , transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless


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PDF BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV
2008 - C5750X7R1H106M

Abstract: 30RF35
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL( AV , (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 , -100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , (MHz) 3400 to 3600 VDS (V) 28 PL( AV ) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj =


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
2009 - transistor 9575

Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 - 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL( AV , ) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
2010 - BLF6G10LS-160RN

Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 - 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL( AV , Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13
2010 - Not Available

Abstract: No abstract text available
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL( AV , substances (RoHS) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications , BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , (MHz) 3400 to 3600 VDS (V) 28 PL( AV ) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL( AV , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
2008 - transistor K 1352

Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M BLF6G27LS-135 BLF6G27-135 30RF35 722 smd transistor
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL( AV ) PL(p , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M 30RF35 722 smd transistor
2009 - C5750X7R1H106M

Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL( AV ) Gp D , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol


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PDF BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table
Not Available

Abstract: No abstract text available
Text: -23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor , Continental Device India Limited Data Sheet –V CBO –V CEO –V EBO –IC Ptot Tj m ax. m ax. m ax. m ax. m ax. m ax. 50 50 5 150 150 150 hFE min. m ax. 70 400 –V CBO –V CEO –V EBO –IC –I B m ax. m ax. m ax. m ax. m ax. 50 50 5 150 30 V V V , voltage –V (BR)CEO min –IC = 1 mA; IB = 0 50 V Collector cut-off current –VCB = 50 V; IE = 0


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PDF OT-23 CSA1162 CSA1162Yâ CSA1162GR C-120
2008 - Not Available

Abstract: No abstract text available
Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 - 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , VDS (V) 32 PL( AV ) (W) 32 Gp (dB) 22 D (%) 27 ACPR (dBc) -42[1] Test signal: 3GPP; test , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor , 2008 2 of 10 NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor 6. Characteristics


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PDF BLF6G10LS-160 BLF6G10LS-160
2013 - Not Available

Abstract: No abstract text available
Text: BLF6G10S-45 Power LDMOS transistor Rev. 4 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , VDS (V) 28 PL( AV ) (W) 1.0 Gp (dB) 23 D (%) 8 ACPR (dBc) 48.5[1] Test signal: 3GPP; test , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10S-45 Power LDMOS transistor , Rev. 4 - 11 March 2013 2 of 11 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 6


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PDF BLF6G10S-45
2008 - transistor BV-1 501

Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. D 1-carrier N-CDMA[2] VDS PL( AV ) PL , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB
2011 - Not Available

Abstract: No abstract text available
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station , ] f (MHz) VDS PL( AV ) PL(M) [1] Gp (V) (W) 18.5 (W) 130 13 D ACPR885k ACPR1980k (dBc) (dBc) 65 , -100; BLF6G38LS-100 WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Symbol


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
2011 - Not Available

Abstract: No abstract text available
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , performance at Tcase = 25 C in a class-AB production test circuit. 1-carrier N-CDMA[2] f VDS PL( AV , -100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications  RF power amplifiers for , of 13 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
2010 - transistor 502

Abstract: Rogers 4350B doherty combiner Doherty amp BLD6G22LS-50,112 BLD6G22L-150BN/2 BLD6G21LS-50 BLD6G21L-50 4350B 2110 transistor
Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev , proper input/output match and bias setting as with a normal class-AB transistor . Table 1. Typical performance RF performance at Th = 25 °C. W-CDMA [1][2] f VDS PL( AV ) Gp D ACPR PL , transistor Integrated ESD protection Good pair match (main and peak on the same chip) Independent , W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 4. Block diagram RF-input/bias main


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PDF BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50 BLD6G22LS-50 transistor 502 Rogers 4350B doherty combiner Doherty amp BLD6G22LS-50,112 BLD6G22L-150BN/2 BLD6G21LS-50 BLD6G21L-50 4350B 2110 transistor
Not Available

Abstract: No abstract text available
Text: Transistor MTTF Mean Time To Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device , BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for , ] IDq VDS PL( AV ) D ACPR (dB) (%) (dBc) 18.0 32 31[1] Gp Test , -160BV NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin


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PDF BLF8G22LS-160BV
2011 - 1206 PHILIPS

Abstract: transistor 86
Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 - 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base , [1] f (MHz) 2110 to 2170 IDq (mA) 1300 VDS (V) 32 PL( AV ) (W) 55 Gp (dB) 18.0 D (% , BLF8G22LS-160BV Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4,5 6 7 [1 , Semiconductors BLF8G22LS-160BV Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25


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PDF BLF8G22LS-160BV excell11 1206 PHILIPS transistor 86
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