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AUY18/4 datasheet (1)

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AUY18

Abstract: B13 transistors 100S Germanium Transistor AUY18V ic B17
Text: Tensioning plate t 4 1 1 02.7 01.2 0.06 Mica disc -3» >-.4.5±aj» Insulating nipple scale: 2:1 , emitter circuit) lO1» 'k 5 103 5 10z 5 101 4 au Lj


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PDF AUY18 Q62901 Q62901-B17-A Q62901-B17-B Q60120- Q62901 AUY18 B13 transistors 100S Germanium Transistor AUY18V ic B17
2010 - ASZ15

Abstract: ad143 ASZ18 AUY37 ASZ16 AUY35 GT906AM AU113 NKT-402 AUY22A
Text: -66var TO-66var StR-1/ 4 TO-3 TO-3 !9-3 TO-204var TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 45 , 170 80 120 4 ~~~ 250 250 430k 430k 430k 5.0k 400k 4UUk 450k 450k 450k 250k 300k ~~OO~ 3.0m 3.0m , +g:~ TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 !9-3var TO-3 TO-3 TO-41 TO-3 TO-3 TO-3 TO-3 StR-1/ 4 TO , J 125 J 100 C 100 J 100 J 100 J 100 J 100 J +g:~ TO-3 TO-3 TO-3 StR-1/ 4 TO-3 TO-3 TO-3 TO-3 !


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PDF 2N5900 MP3730A ADY25 AD159 AD138 ASZ17 ASZ18 CTP1306 ASZ15 ad143 AUY37 ASZ16 AUY35 GT906AM AU113 NKT-402 AUY22A
AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Text: 0.3 0.3 1.5 1.5 4 4 2 2 127 127 127 127 127 127 30 30 80 80 80 10 10 20 , .360 M AX. 4 • ? - E 1" 4 — ■M 3 f jp ffp f ^ 1 TUP A IV? N.7 .140 D IA . M A , M T-22 M T-23 MT-7 « 1 / 4 - 28UNF 8U N F-2A p l T± = Æ ! , / .090 MAX. \ .3 9 0 i .02 5 ■p t MAX. TO-68 .3 4 0 - .025 M T-36 SEATIN G PLANE G erm anium


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PDF ADY11 ADY27 NS257 AD143 ad148 ASZ1015 Germanium Power Devices
AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Text: 2 1 0.45 1.5 127 AD148 32 26 10 3.5 30-60 1 1 0.45 4 127 AD148—IV 32 26 10 3.5 50-100 1 1 0.45 4 127 —V AD149 50 30 20 3.5 30-60 1 1 0.3 2 127 AD149— IV 50 30 20 3.5 50-100 1


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PDF AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
AL102 ATES

Abstract: 2N2222A mps KR206 AD149 SFT353 TIS88 2N4265 2N2431 TIS58 2SC984
Text: /2 20106 20100/0 20110 20130 20130 2Q140 20141 20201/2 20240 2G270/1 20301 20302 2G303/ 4 2G306 , -6, BFY10, MPSH34. A ^H B C 1 4 0 -1 4 0 /6 , B8Y44, MP8H34,2N1613. ASY27, BC140-140/6, BSY44, MPSH34 , , OC78-80. 2N581-1308. _ API 37, ASY26-27,0 6 4 6 ,2N1305. ASY27, 2N1307. AD150, TI3027,2N2836. A0131 , 2N630 2N631 2N632 214633 2N634A 2N 635/6 2N638 2N 638A /B 214639 2N640 2N641 214642 2N 64 3/ 4 /S 2N647 214649 2N650 2N 651/A 2N 6S2/A 2 N 6 5 3 / 4 /5 2N656 2N658 2N6S9 2N660 AC117-122/30-153-153V1


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PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 SFT353 TIS88 2N4265 2N2431 TIS58 2SC984
IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: (-Ucev = 32V; 1/be^0.2V) ^CEV 5(<18* <50 Emitter-base cutoff current (-l/EBO = 16V) — ^EBO 4 (<18 , 1.5 (>0.5) 1.5 (>0.5) MHz 'bb- 75 (<200) 75 (<200) n cb.,c 27 27 pf NF 4 (<10)* 3 ( < 6) * db 3 (1.2 , high-frequency use in a case 18 A 4 DIN 41 876 (TO-72). The terminals are electrically insulated from the case , .3 = Z. 4 = 20 turns 0.5 enameled silk-covered copper wire on core B 63310 K1 A 12.3. CK = 1.5 to 5pf so , . Kcr3V 0 1 2 3 4 5 6mA Small-signal short-circuit input admittance y,1e , (common emitter circuit) mmho


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PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: 176, 2SB 5 4 ,2SB 5 6 ,2SB 56A, AC 125, AC 126, 2SB 54, 2SB 56, 2SB 56A, AC 125, AC 126, 2SB 54,2SB 56 , 20-42 2a 2a 2a 2a 2a 2a 2SB 54, 2SB 56, 2SB 56A, AC 2SB 5 4 ,2SB 56, 2SB 56A, AC 2SB 54,2SB 56, 2SB 56A


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
NT101

Abstract: bf503 KT-934 Kt606 SEMICON INDEXES Mps56 transistors 2SA749 72284 2sk81 2SB618
Text: Distributors White Manufacturer’s Logos 3 Alphanumeric listing of transistors Pink 4 Alphanumeric listing , also listed separately with appropriate column headings in Section 4 . Unijunction Transistors are , as those in Sections 3, 4 & 5. FOR THE BUYER The buyer of transistors will find the final columns of Sections 3, 4 & 5 particularly useful where the manufacturers of each transistor are given in , Sections 3 and 4 are itemized on the inside of the back cover. VALUES QUOTED All values quoted are


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y51 h 120c

Abstract: ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Text: 25MA 500MA 85C 85C 85C 85C 85C 15DMWF 100MWF 100MWF 100MWF 225MWF 80DK 4 DM 4 DM 60M 1M 30P 5P 5P


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PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
sx3704

Abstract: AP239 Transistor 80139 8C547 2N50B IN2222A 6C131C radio AC176 AC126 sft353 2N2064
Text: = = = = green grey red yellow blue 2 2 3 MANUFAC 4 EU R O P EA N 5 | 6 A M E R IC A N JAP , N-channel P PNP transistor or P-channel PN unijunction transistor 4 . MANUFAC Manufacturer (see separate , AC141— 4 A C 1 4 1 -5 G G G G G N N N N N AT AT AT AT AT G G N AT P AT G P AT AC142HK AC142K , AC142— 4 AC142—6 AC142—6 G G G G P P P P AC163KVI AC163V AC153V AC176VI AC176 2N647 2742430 01 01 01 01 01 AC176K AC178K AC176K AC 176 AC176 AC 1 4 1 -6 AC142 AC142 AC142 AC142H AT AT AT AT


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Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


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IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: leaf update pack - ISBN 0 904944 82 4 Volume 3 - INTEGRATED CIRCUITS - Edition 1 5 Soft bound - ISBN , €” 3.005 3.199 3.370 3.384 4 Listing of Field-Effect Transistors A- Z 4.005 1 — 4.059 llllll , section 4 . For the Buyer The buyer of semiconductors will find the right-hand column of Sections 3 and 4 , Blatter in Ringhefter - ISBN 0 904944 81 6 Aktualisierungspaket, lose Blatter - ISBN 0 904944 82 4 Band 3 , Auflistung von bipolaren Transistoren Digital-Transistoren I.G.B.T. A-Z 3.005 1 — 3.199 3.370 3.384 4


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
t110 94v 0

Abstract: PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
Text: published 38 times per year in the following sequence: 2 in Jan., 4 in Mar., 2 in Apr., 2 in May, 6 in Jun , .134 3. Germanium 4 . Silicon PNP , number con- 00115 taining the zero is listed first. AP01 AP1 AP02 4 . Number and/or letter groupings , preceding page. A simplified model of the arrangement as described is shown below. 4 Type Number Chara , - 37 STI UPI DIT ETC 2N1 1 4 AMR 139- 79 STI HSE 364- 41 2N59B AMR 143- 86 HTN NJS CRI CSR


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PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
TH20594MC1.4

Abstract: TH3169.4 XN203M-V1.4 SUN4004BS-8.4 L6262-2.4 guardmaster+atlas+4 LT1731EMS8-8.4 PEF22622FV1.4 PSB21150FV1.4 schrack+ra+4
Text: 4 3 THIS DRAWING IS UNPUBLISHED. 7W\ W COPYRIGHT 2009 RELEASED FOR PUBLICATION BY , 0 ) APVD WK NOTES 1 MATERIAL: HOUSING: NYLON 66, U L 9 4 V - 0 , COLOR: SEE TABLE , ' C PER TEST SPEC. 1 0 9 - 2 0 2 , CONDITION B. RAISED TYPE PN: 9 - 4 4 0 0 5 4 - 2 LOGO , 4P 3P 2P 16P 15P 14P 13P 12P 11P 10P 9P 8P 7P 6P 5P 4P 3P 2P POS. 8 - 4 4 0 0 5 4 -9 8 - 4 4 0 0 5 4 -8 8 - 4 4 0 0 5 4 -7 8 - 4 4 0 0 5 4 -6 6 - 4 4 0 0 5 4 -9 6 - 4 4 0 0 5 4 -8 6


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PDF MAR11 TH20594MC1.4 TH3169.4 XN203M-V1.4 SUN4004BS-8.4 L6262-2.4 guardmaster+atlas+4 LT1731EMS8-8.4 PEF22622FV1.4 PSB21150FV1.4 schrack+ra+4
2005 - TH3169.4

Abstract: TH20594MC1.4 C1206 KEMET G150XTN06.4 CDR35BX124B XN203M-V1.4 CDR32 CDR31 CDR03 CDR01-CDR06
Text: -55681 PART NUMBER 100 Volt - C1808 SIZE (MILITARY CDR03) (Cont'd) 560 J C1808P561J1G( 4 )C CDR03BP561BJW( 4 ) 680 J,K C1808P681(3)1G( 4 )C CDR03BP681B(3)W( 4 ) 820 J C1808P821J1G( 4 )C CDR03BP821BJW( 4 ) 1,000 J,K C1808P102(3)1G( 4 )C CDR03BP102B(3)W( 4 ) 12,000 K C1808P123K1X( 4 )C CDR03BX123BKW( 4 ) 15,000 K,M C1808P153(3)1X( 4 )C CDR03BX153B(3)W( 4 ) 18,000 K C1808P183K1X( 4 )C CDR03BX183BKW( 4 ) 22,000 K,M C1808P223(3)1X( 4 )C CDR03BX223B(3)W( 4 ) 27,000 K C1808P273K1X( 4 )C CDR03BX273BKW( 4 ) 33,000 K,M C1808P333(3)1X( 4 )C


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PDF CHIP/MIL-PRF-55681 CDR01 CDR02 CDR03 CDR04 C0805 C1805 C1808 C1812 CDR05 TH3169.4 TH20594MC1.4 C1206 KEMET G150XTN06.4 CDR35BX124B XN203M-V1.4 CDR32 CDR31 CDR03 CDR01-CDR06
1999 - L6262-2.4

Abstract: schrack+ra+4
Text: 0.50 ­­­ 1.0 OM­­­ ­­­ 2.0 ON­­­ 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4


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2011 - Not Available

Abstract: No abstract text available
Text: RESISTANCE : 25m MAX. INSERTION FORCE : 0.75 N MAX / CONT EXTRACTION FORCE : 0.15 N MIN / CONT 4 INSULATION RESISTANCE : 10 M MIN. 4 A 8.00 (4X2.0) A 2.00 0.05 2.00 0.05 (24X) 48.00 49.90 NOTES : 1 , . HOUSING : LCP 30% GLASS-FILLED. 4 . CONNECTOR PRINTED WITH P/N AND DATE CODES. 5. FOR ACTUAL CONTACT LOADINGS, SEE LOADING PATTERN MATING SIDE.} 6. 4 = LEVEL 1 (5.30) 5 = LEVEL 2 (6.80) 6 = LEVEL 3 (8.30) LEAD FREE INDICATOR : LF = LEAD FREE 15.40 0.50 B 11.60 +0.20 0 NOTE 2 NOTE 4 NOTE 5 B


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PDF B20190 I05-0108 I06-0107 I08-0050 I10-0098 I11-0044 I11-0044 HM2J08PE5110---- BSC202767003
XN203M-V1.4

Abstract: TH3169.4
Text: Tantalum Capacitor m iniReel C ap 4 " O rd e r ( N um ber Yj A-Case EIA 3 216 m iniBag C ap O rd e r N um ber s lflilii S&iiss! A-Case EIA 3 216 .l f l F 35V 6 4 1 -6 1 0 -lp .F 35V . 4 7 p F 25V 1-Oji.F 1 6V 6 4 1 -6 4 7 6 4 1 -7 1 0 ^ 5 0 p C . . 4 7 p F 25V l.O p F 16V 4 4 i -6 4 7 4 4 1 -7 1 0 1 .5 p F 16V 6 4 1-7 15 1 0 0 P C . 1 .5 p F 16V 4 4 1- 7 1 5 2 .2 p F 10V Rag 6 4 1 -7 2 2


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PDF 150pF XN203M-V1.4 TH3169.4
2005 - Not Available

Abstract: No abstract text available
Text: )2G5C(1) CC75CH9R1(3) CCR75CH9R1(3)(1) C114G100( 4 )2G5C(1) CC75CH100( 4 ) CCR75CH100( 4 )(1) C114G110( 4 )2G5C(1) CC75CH110( 4 ) CCR75CH110( 4 )(1) C114G120( 4 )2G5C(1) CC75CH120( 4 ) CCR75CH120( 4 )(1) C114G130( 4 )2G5C(1) CC75CH130( 4 ) CCR75CH130( 4 )(1) C114G150( 4 )2G5C(1) CC75CH150( 4 ) CCR75CH150( 4 )(1) C114G160( 4 )2G5C(1) CC75CH160( 4 ) CCR75CH160( 4 )(1) C114G180( 4 )2G5C(1) CC75CH180( 4 ) CCR75CH180( 4 )(1) C114G200( 4 )2G5C(1) CC75CG200( 4 ) CCR75CG200( 4 )(1) C114G220( 4 )2G5C(1) CC75CG220( 4 ) CCR75CG220( 4 )(1) C114G240( 4


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PDF EIA-198
Not Available

Abstract: No abstract text available
Text: % ± 20% ≤ 6 √CV µA, 6 max, 5 min. –20 °C multiple of 25 °C Z ≤ 8 for 16 to 50 V, 4 for , ) 10.3 8.2 16.9 Nominal Size DXL (in) 19.0 1 3/8 X 5 3/ 4 33000 4CMC333M016AK8 34.2 27.2 5.7 6.4 1 3/8 X 1 3/ 4 220000 4CMC224M016EC8 13 10.3 15.2 17 1 3/ 4 X 4 1/ 4 55000 4CMC553M016AA8 21.2 16.9 8.4 9.4 1 3/8 X 2 1/ 4 240000 4CMC244M016BJ8 11.7 9.3 15.6 17.5 2 X 3 3/ 4 77000 4CMC773M016AH8 18.3 14.6 9.3 10.4


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PDF 4CMC112M450BH8 4CMC182M500EF8 4CMC122M450EB8 4CMC182M500BD8 4CMC122M450AC8 4CMC212M500BE8 4CMC132M450AD8 4CMC232M500BF8
2002 - TH3169.4

Abstract: No abstract text available
Text: 20% 6 CV A, 6 max, 5 min, 20 C multiple of 25 C Z 8 for 16 to 50 V, 4 for 63 to 100 V, 3 for 160 V & , 21.2 17.8 23.5 19.0 1 3/8 X 1 3/ 4 1 3/8 X 2 1/ 4 1 3/8 X 2 3/ 4 1 3/ 4 X 2 1/ 4 1 3/8 X 3 1/ 4 1 3/ 4 X 2 3/ 4 1 3/8 X 3 3/ 4 2 X 2 1/ 4 1 3/8 X 4 1/ 4 1 3/ 4 X 3 1/ 4 2 X 2 3/ 4 1 3/8 X 4 3/ 4 1 3/8 X 5 1/ 4 1 3/ 4 X 3 3/ 4 2 X 3 1/ 4 1 3/8 X 5 3/ 4 1 3/ 4 X 4 1/ 4 2 X 3 3/ 4 1 3/ 4 X 4 3/ 4 1 3/ 4 X 5 1/ 4 2 X 4 1/ 4 1 3/ 4 X 5 3/ 4 2 X 4 3/ 4 Cap. F Catalog Part Number ESR Max. 25 °C Ripple Amps, 85 °C Nom Size 120 Hz 20 kHz


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PDF 4CMC781M500BH8 4CMC821M500EB8 4CMC821M500AC8 4CMC901M500AD8 4CMC102M500BB8 4CMC102M500AE8 4CMC102M500EJ8 4CMC112M500AF8 4CMC122M500EC8 4CMC132M500BJ8 TH3169.4
SUN4004BS-8.4

Abstract: PEF22622FV1.4
Text: m olex 1.25m m (.0 4 9 ") Pitch FEATURES AND SPECIFICATIONS FFC/FPC Connector Electrical , .5 0 (.0 9 8 ) 16 5 2 0 4 4 -1 6 4 5 2 3 . 4 0 (.9 2 1 ) 1 8 .7 5 (.7 3 8 ) 29 5 2 0 4 4 -2 9 4 5 ' 3 9 .6 5 (1 .5 6 1 ) 3 5 .0 0 (1 .3 7 7 ) 4 . 5 2 0 4 4 -0 4 4 5 8 . 4 0 (.3 3 1 ) 3 .7 5 ( .1 4 7 ) 17 5 2 0 4 4 -1 7 4 5 2 4 .6 5 (.9 7 0 ) 2 0 .0 0 (.7 8 7 ) 30 5 2 0 4 4 -3 0 4 5 4 0 .9 0 (1 .6 1 0 ) 3 6 .2 5 ( 1 . 4 2 7 ) 5 . 5 2 0 4


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PDF bS873BS SUN4004BS-8.4 PEF22622FV1.4
Not Available

Abstract: No abstract text available
Text: 12 11 10 9 8 4 4 2 4 8 P AC KAG IN G T A P E T Y P A L L AROUND ON BOTH MAJOR AN , .5" X 4 .5 ' T Y P (3) P L S E E N O TE tt5 G ANG ED IN V E R TED U N S H IE LD E D / SH IE LD E D MODJACK A S S E M B L Y (S E E 'D E T A IL A ' FO R O R IEN TATIO N INTO T R A Y ) 4 4 2 4 8 F A M ILY 4 4 5 8 0 F A M ILY NO MO DJACKS TH IS TR A Y S E E N O TE *1 T R A Y O R IEN TATIO N T Y P (9) P L S E E N O TE « 4 D E T A IL A (T R A Y D E T A IL REMOVED FO R C LA R ITY


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PDF
IC 4094

Abstract: 4094N 4094 be MINI CKTS ic cd 4094
Text: ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( .100 2.54 .2 0 0 5.0 8 .3 0 0 7.6 2 . 4 0 0 10.16 .5 0 0 12.70 .6 0 0 15.24 .7 0 0 17.78 .8 0 0 2 0 .3 2 .9 0 0 2 2 .8 6 1.000 2 5 . 4 0 1.100 2 7.94 1.200 3 0 . 4 8 1.300 3 3 .0 2 1.400 3 5 .5 6 1.500 38.10 1.600 4 0 .6 4 1.700 43.18 1.800 4 5.72 1.900 4 8 .2 6 2 .0 0 0 5 0 .8 0 2.100 5 3.34 2 .2 0 0 5 5.88 2 .3 0 0 5 8.42 2 . 4 0 0 6 0 .9 6 2 .5 0 0 6 3 .5 0 2 .6 0 0 6 6 .0 4 2 .7 0 0 6 8 .5 8 ± ± ± ± ± ± ± ± , ) .011 .28 ) .011 .28 ) .011 .28 ) DIM. A .190 ± ( 4.8 3 ± .2 9 0 ± ( 7.3 7 ± .3 9 0 ± ( 9.91 ± . 4 9 0


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PDF SDA-4094 IC 4094 4094N 4094 be MINI CKTS ic cd 4094
Not Available

Abstract: No abstract text available
Text: 11.8dB, output noise voltage : Vno = '102dBm typ,). 3) Bass boost circuit. 4 ) AVC (Auto Volume Control , 0 , Symbol led Icc2 Icc3 Icc4 Alec Min. - Typ. 0.2 3.1 4 .9 Max. 3.0 4 .7 Unit , cc 4 Circuit current 3 Circuit current 4 Circuit current variation Voltage gain Rated output power , =1.0V Vo=0.3Vrmo THD V no 1 V no 2 0.1 -1 0 2 -0 9 1 6 .0 0.5 -9 7 -8 4 % dBm dBm kQ , rejection 4 Bass boost AVC level Channel separation Mute level Beep output voltage Power ON voltage 1


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PDF BA3574BFS BA3574BFS 102dBm
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