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ISL55143IRZ-T Intersil Corporation High-Speed 18V CMOS Comparators; TQFN36; Temp Range: -40° to 85°C
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ATF-55143 datasheet (12)

Part Manufacturer Description Type PDF
ATF55143 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original PDF
ATF-55143 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original PDF
ATF-55143 Avago Technologies Single Voltage E-pHEMT Low Current Low Noise +24.2dBm OIP3 in SC-70 Original PDF
ATF-55143-BLK Agilent Technologies FET, Enhancement, 0.18 VThreshold, ID 0.1 A Original PDF
ATF-55143-BLKG Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 2.7V 10MA SOT-343 Original PDF
ATF-55143-TR1 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original PDF
ATF-55143-TR1 Agilent Technologies FET, Enhancement, 0.18 VThreshold, ID 0.1 A Original PDF
ATF-55143-TR1 Agilent Technologies Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original PDF
ATF-55143-TR1G Avago Technologies RF FETs, Discrete Semiconductor Products, IC TRANS E-PHEMT 2GHZ SOT-343 Original PDF
ATF-55143-TR2 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original PDF
ATF-55143-TR2 Agilent Technologies FET, Enhancement, 0.18 VThreshold, ID 0.1 A Original PDF
ATF-55143-TR2G Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 2.7V 10MA SOT-343 Original PDF

ATF-55143 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

Abstract: ATF-55143 SOT 23 AJW ATF55143 LL1608-F2N7S ATF-54143 LL1608-FH2N7S LL1608-FH5N6K knife edge isolation LL1608-FH10NK
Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies' ATF-55143 is a low noise , typical bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-55143 , current. The ATF-55143 is housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The 400 micron gate width of the ATF-55143 makes it ideal for applications in the 2 to 10 GHz frequency range


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PDF ATF-55143 ATF-55143 ATF55143 5988-3399EN 5989-3007EN agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW LL1608-F2N7S ATF-54143 LL1608-FH2N7S LL1608-FH5N6K knife edge isolation LL1608-FH10NK
2006 - transistor ajw

Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
Text: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , linearity. Besides having a very low typical noise figure (0.6 dB), the ATF-55143 uses a 2.0 Volt bias and provides a +21 dBm intercept point at 10 mA drain current. In addition, the ATF-55143 is an enhancement , differential between the gate and source terminals. The ATF-55143 is one of a family of new high dynamic , frequency range. The ATF-55143 is specified on the datasheet at 2 GHz at a Vds of 2.7V and an Ids of 10


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PDF ATF-55143 ATF-55143 AN-1281: ATF-54143 5988-9555EN transistor ajw ATF55143 Curtice AN-1222 ATF-551M4 ATF-5X143 55143
2002 - lna 2.5 GHZ s parameter ads design

Abstract: 5Ghz lna transistor Curtice ATF-55143 BCV62B ATF55143 ATF-54143 S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise , Q1 ATF-55143 C1 C4 Zo Zo C8 L2 L1 LL1 LL2 C5 C2 R6 R1 C3 R2 R5 R3 C7 Q2, Q3 BCV62B Vdd R4 Introduction The Agilent Technologies ATF-55143 is a low noise , biasing the typical bipolar junction transistor. The ATF-55143 is a 400 micron gate width device with 2 GHz performance tested and guaranteed at a Vds of 2.7 V and Id of 10 mA. The ATF-55143 is housed in


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PDF ATF-55143 ATF55143 o8675 5988-5846EN ECEN4228 ATF-551M4 lna 2.5 GHZ s parameter ads design 5Ghz lna transistor Curtice BCV62B ATF-54143 S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
2003 - agilent pHEMT transistor

Abstract: Curtice agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw ATF-54143 ATF-55143 advanced design system ATF55143 ATF-5X143 bjt differential amplifier application circuits
Text: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , high linearity. Besides having a very low typical noise figure (0.6 dB), the ATF-55143 uses a 2.0 Volt bias and provides a +21 dBm intercept point at 10 mA drain current. In addition, the ATF-55143 , current creating a voltage differential between the gate and source terminals. The ATF-55143 is one of , for applications in this frequency range. The ATF-55143 is specified on the datasheet at 2 GHz at a


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PDF ATF-55143 ATF-55143 5988-9555EN agilent pHEMT transistor Curtice agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw ATF-54143 advanced design system ATF55143 ATF-5X143 bjt differential amplifier application circuits
2001 - SOT 23 AJW

Abstract: agilent pHEMT transistor LL1608-FH5N6K LL1608-FH2N7S LL1608-FH10NK LL1608-F2N7S ATF-55143 ATF55143 ATF-54143 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Agilent Technologies' ATF-55143 is a low noise , biasing the typical bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-55143 , current. The ATF-55143 is housed in a 4lead SC-70 (SOT-343) surface mount plastic package. The 400 micron gate width of the ATF-55143 makes it ideal for applications in the 2 to 10 GHz frequency range


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PDF ATF-55143 ATF-55143 5988-3399EN SOT 23 AJW agilent pHEMT transistor LL1608-FH5N6K LL1608-FH2N7S LL1608-FH10NK LL1608-F2N7S ATF55143 ATF-54143 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
2006 - ATF-55143

Abstract: ECEN4228 ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285
Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise , printed inductors for small size and low cost. When biased at a Vds of 2 volts and Ids of 15 mA, the ATF-55143 , schematic is shown in Figure 1, with component values in Table 2. Q1 ATF-55143 C1 Table 1. Design , current while still running from a 3.3 volt supply voltage. The Avago Technologies ATF-55143 is a low , biasing the typical bipolar junction transistor. The ATF-55143 is a 400 micron gate width device with 2


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PDF ATF-55143 MTT-28, ECEN4228 ATF-551M4 5988-5846EN ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285
2006 - L-07C1N8ST

Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
Text: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description , very low typical noise figure (0.5 dB), the ATF-55143 uses a 2.7 Volt bias and provides a +24 dBm intercept point at 10 mA drain current. In addition, the ATF-55143 is an enhancement mode device and thus , be biased from a supply voltage of 3.0-3.3 volt range. The ATF-55143 is one of a family of new , performance tested and guaranteed at a Vce of 2.7V and Id of 10 mA. The ATF-55143 is housed in a 4-lead SC


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PDF ATF-55143 ATF-55143 AV01-0376EN L-07C1N8ST atf55143 fet curtice nonlinear model sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
2003 - 276 2043 transistor pnp

Abstract: ATF-55143 ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 0840 057 C0115
Text: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and , Package Marking DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a


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PDF ATF-55143 OT-343 SC-70) Desc157 5988-8410EN 5989-0009EN 276 2043 transistor pnp ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 0840 057 C0115
2001 - SOT343 C5

Abstract: 276 2043 transistor pnp transistor pnp 1.6-2.2
Text: Information Part Number ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK No. of Devices 3000 10000 100 , Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , 's ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol VDS VGS VGD IDS IGS


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PDF ATF-55143 SC-70 OT-343) OT-343 5988-3190EN SOT343 C5 276 2043 transistor pnp transistor pnp 1.6-2.2
2006 - TL 2272 -L4

Abstract: ATF-55143-TR1G C0115 362 marking code sot 23-6 21716-2 0503553 ATF-55143-TR2 ATF-55143-TR1 ATF-55143-BLK ATF-55143
Text: ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS , Application Note A004R: Electrostatic Discharge Damage and Control. ATF-55143 Absolute Maximum Ratings [1 , . ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a , from actual measurements. ATF-55143 Typical Performance Curves 1.2 1.0 Fmin (dB) GAIN


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PDF ATF-55143 ATF55143 SC-70 OT343) ATF-55143 OT-343 5989-3750EN TL 2272 -L4 ATF-55143-TR1G C0115 362 marking code sot 23-6 21716-2 0503553 ATF-55143-TR2 ATF-55143-TR1 ATF-55143-BLK
2001 - max 1788

Abstract: wy 636 transistor ATF-55143 ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 TL 2272 -L4 ATF agilent 5F
Text: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and , Package Marking DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high , conventional depletion mode devices. 1 ATF-55143 Absolute Maximum Rating s [1] Symbol Parameter , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a


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PDF ATF-55143 OT-343 SC-70) 5988-3190EN 5988-3587EN max 1788 wy 636 transistor ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 TL 2272 -L4 ATF agilent 5F
2001 - agilent RF Marking 07

Abstract: 55143 low noise high frequency HEMT from agilent 0* dbm sot343 Date code character identifies month of manufacture
Text: . Ordering Information Part Number ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK No. of Devices 3000 10000 , Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , available ­ Ideal for high volume applications About the Product Agilent Technologies's ATF-55143 is a , mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 , . ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical


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PDF ATF-55143 OT-343 SC-70) ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK 5988-3839EN agilent RF Marking 07 55143 low noise high frequency HEMT from agilent 0* dbm sot343 Date code character identifies month of manufacture
2006 - ATF pHEMT

Abstract: ATF-541M4 ATF-54143 Avago ATF at 2.4 Ghz AVAGO TECHNOLOGIES wireless ATF54143 ATF-55143 TMA DBM
Text: E-pHEMT FETs include the ATF-54143 and ATF-55143 in SC-70 package, and the ATF-541M4 and ATF-551M4 in , power amplifier for 802.11a and HiperLAN/2 wireless LAN at 5 GHz. The ATF-55143 and ATF-551M4 are , Amplifier for 802.11a and 802.11b Wireless LAN · ATF-55143 , ATF-551M4 ­ LNA for Cellular/PCS/W-CDMA , frequency · Optimized for 3V operation ATF-55143 2.7 10 2 0.6 18 24 14 4-lead SC


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PDF ATF-5x143, 5988-5089EN ATF pHEMT ATF-541M4 ATF-54143 Avago ATF at 2.4 Ghz AVAGO TECHNOLOGIES wireless ATF54143 ATF-55143 TMA DBM
2004 - ATF-55143-TR1

Abstract: A004R ATF-55143 ATF-55143-BLK ATF-55143-TR1G ATF-55143-TR2 gm 2211 SC 2272 L4 dc/BC 5047 pnp
Text: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , Technologies's ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4 , devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units VDS Drain-Source , ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical


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PDF ATF-55143 OT-343 SC-70) 5989-0009EN 5989-1921EN ATF-55143-TR1 A004R ATF-55143-BLK ATF-55143-TR1G ATF-55143-TR2 gm 2211 SC 2272 L4 dc/BC 5047 pnp
2004 - ATF-55143-TR1G

Abstract: PHEMT marking code a ATF-55143 A004R ATF-55143-TR2 ATF-55143-TR1 ATF-55143-BLK zo 107 TL 924 D 901 S 45 T
Text: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , Technologies's ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4 , devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units VDS Drain-Source , ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical


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PDF ATF-55143 OT-343 SC-70) 5989-1921EN 5989-3750EN ATF-55143-TR1G PHEMT marking code a A004R ATF-55143-TR2 ATF-55143-TR1 ATF-55143-BLK zo 107 TL 924 D 901 S 45 T
2005 - IR 9516

Abstract: ATF-55143-TR1G L 2608 C0143
Text: Information Part Number ATF-55143-TR1G ATF-55143-TR2G ATF-55143-BLKG No. of Devices 3000 10000 100 , ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies' ATF-55143 is a high dynamic range, very low noise, single , gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data , Control. ATF-55143 Absolute Maximum Ratings [1] Symbol VDS VGS VGD IDS IGS Pdiss Pin max


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PDF ATF-55143 ATF-55143 SC-70 OT-343) OT343 SC-70) 5989-3750EN AV02-0923EN IR 9516 ATF-55143-TR1G L 2608 C0143
2001 - ATF-55143

Abstract: ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 HEMT marking P
Text: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , intercept DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high dynamic range , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a


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PDF ATF-55143 OT-343 SC-70) 5988-3190EN 5988-3587EN ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 HEMT marking P
2002 - 276 2043 transistor pnp

Abstract: ATF-55143 ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 lambda lg 532 power supply
Text: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , intercept DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high dynamic range , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a


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PDF ATF-55143 OT-343 SC-70) 5988-3587EN 5988-8410EN 276 2043 transistor pnp ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 lambda lg 532 power supply
2006 - TL 2272 -L4

Abstract: TL 2272 -L6
Text: Container 7" Reel 13" Reel antistatic bag 7" Reel 13"Reel antistatic bag ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK ATF-55143-TR1G ATF-55143-TR2G ATF-55143-BLKG Package Dimensions Outline 43 (SOT-343/SC70 lead , ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , linearity and low noise makes the ATF-55143 ideal for cellular/PCS hand sets, wireless data systems (WLL/RLL , A004R: Electrostatic Discharge Damage and Control. ATF-55143 Absolute Maximum Ratings [1] Symbol


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PDF ATF-55143 ATF55143 SC-70 OT343) ATF-55143 OT343 5989-3750EN AV02-0923EN TL 2272 -L4 TL 2272 -L6
2005 - TL 2272 -L4

Abstract: 032871 01257 ATF-55143-TR1G HEMT Amplifier A004R MUR 1604 06183 ATF-55143-BLKG SC 2272 L4
Text: ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS hand sets , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , . ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a , been de-embedded from actual measurements. ATF-55143 Typical Performance Curves 1.2 1.0


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PDF ATF-55143 ATF55143 SC-70 OT343) OT343 SC-70) ATF-55143 5989-3750EN AV02-0923EN TL 2272 -L4 032871 01257 ATF-55143-TR1G HEMT Amplifier A004R MUR 1604 06183 ATF-55143-BLKG SC 2272 L4
2008 - MUR 1604

Abstract: cir 2272 lambda lg 532 power supply A004R ATF-55143 ATF-55143-TR1G tl 2272 l4 b 1237
Text: ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS , Application Note A004R: Electrostatic Discharge Damage and Control. ATF-55143 Absolute Maximum Ratings [1 , . ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a , . Circuit losses have been de-embedded from actual measurements. ATF-55143 Typical Performance


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PDF ATF-55143 ATF55143 SC-70 OT343) ATF-55143 OT-343 5989-3750EN AV02-0923EN MUR 1604 cir 2272 lambda lg 532 power supply A004R ATF-55143-TR1G tl 2272 l4 b 1237
2003 - X108

Abstract: ATF-54143
Text: Agilent ATF-54143/ 55143 /58143 Reliability Data Sheet Description The ATF-54143/ 55143 /58143 Enhancement Mode FETs are fabricated with Agilent Technologies' new PHEMT C process. This process has been qualified at wafer level and a similar robustness was observed as compared to other PHEMT processes. The ATF-54143/ 55143 /58143 was tested at various stress intervals for DC and RF functionality, i.e., Vd, Vg, Id, NF, Ga, OIP3 and OP1dB. The following data was gathered from the product qualification


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PDF ATF-54143/55143/58143 ATF-54143/55143/58143 JESD22-A113-A 5988-4885EN 5988-9133EN X108 ATF-54143
wimax

Abstract: MGA-72543 atwk-wx01 VMMK-1225 ALM-42316 ALM-31222 ADA-4789 transistor 3866 MGA-632P8 limiters
Text: AVAGO TECHNOLOGIES WiMAX Designer Kit (ATWK-WX01) Contains 3 parts each of the following 32 part numbers: ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 ABA-54563 ADA-4789 HSMP-3816 HSMP-3866 ATF-54143 ATF-55143 ATF-33143 MGA-645T6 MGA-655T6 MGA-675T6 MGA-632P8 MGA-14516 VMMK-1225 MGA-72543 MGA-71543 MGA-425P8 MGA-665P8 ATF-531P8 MGA-53589 IAM-92516 IAM-93516 HSMP-482B HSMP-4820 Avago's WiMAX Designer Kit. This kit has a broad mix of


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PDF ATWK-WX01) ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 wimax MGA-72543 atwk-wx01 VMMK-1225 ALM-42316 ALM-31222 ADA-4789 transistor 3866 MGA-632P8 limiters
2002 - agilent pHEMT transistor

Abstract: ATF pHEMT pHEMT transistor atf541m4 2907A EQUIVALENT schematic diagram ac power regulator knife edge isolation LL1608-FH5N6K LL1608-FH2N7S LL1608-F2N7S agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Text: gate width ATF-55143 device is shown in Figure 10. The plot shown represents an amplifier that uses , . Wideband gain plot of 2 GHz ATF-55143 amplifier using minimal source inductance 20 10 0 GAIN (dB , 4 6 8 FREQUENCY (GHz) 10 12 14 Figure 11. Wideband gain plot of 2 GHz ATF-55143 , of 2 GHz ATF-55143 amplifier with an unacceptable amount of source inductance producing undesirable


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PDF ATF-541M4 ATF-55143 ATF-541xx agilent pHEMT transistor ATF pHEMT pHEMT transistor atf541m4 2907A EQUIVALENT schematic diagram ac power regulator knife edge isolation LL1608-FH5N6K LL1608-FH2N7S LL1608-F2N7S agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
2002 - ATF-54143

Abstract: ATF-641 ATF-10236 9015 transistor sot 23 atf54143 pHEMT ATF10236 variable power divider at 15 ghz ATF-54143 sot-343 ATF-55143 SC 9015
Text: ATF-55143 device is shown in Figure 15. The plot shown in Figure 15 represents an amplifier that , FREQUENCY (GHz) 12 14 Figure 15. Wide-band gain plot of 2 GHz ATF-55143 amplifier using minimal , ) 12 14 Figure 16. Wide-band gain plot of 2 GHz ATF-55143 amplifier with an acceptable amount of , 10 FREQUENCY (GHz) 12 14 Figure 17. Wide-band gain plot of 2 GHz ATF-55143 amplifier with


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PDF ATF-54143 source71 5988-6670EN ATF-10236 ATF-641 ATF-10236 9015 transistor sot 23 atf54143 pHEMT ATF10236 variable power divider at 15 ghz ATF-54143 sot-343 ATF-55143 SC 9015
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