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ATF-10100 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
ATF-10100 ATF-10100 ECAD Model Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
ATF-10100-GP3 ATF-10100-GP3 ECAD Model Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
ATF10100-GP3 ATF10100-GP3 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

ATF-10100 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - ATF-10100

Abstract: ATF-10100-GP3 ATF10100
Text: Number Devices Per Tray ATF-10100-GP3 50 18 ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 , 0.5 ­ 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features · Low Noise , High Output Power: 21.0 dBm Typical P1 dB at 4 GHz Description The ATF-10100 is a high performance , ATF-10100 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter , . VDS = 2V, IDS = 25 mA, TA = 25°C. ATF-10100 Typical Performance, T A = 25°C 16 NFO (dB) 1.5


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PDF ATF-10100 ATF-10100 ATF-10100-GP3 ATF10100
1999 - Not Available

Abstract: No abstract text available
Text: ATF-10100-GP3 50 18 ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 mA NFO dB Mag Ang , 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low , 4 GHz • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz Description The ATF-10100 is a , devices per wafer. mmho 80 140 mA 70 130 180 V -3.0 -1.3 -0.8 2 ATF-10100 , = 25°C. ATF-10100 Typical Performance, TA = 25°C 16 NFO (dB) 1.5 20 20 MSG MAG


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PDF ATF-10100 ATF-10100 metalliz05 5965-8702E
atf 204

Abstract: ATF-10100-GP1
Text: qs Ids Pt T ch T stg Absolute Maximum +5 V -4V Idss 430mW 175°C -65 to +175°C D ATF-10100 , 0.5-12 GHz Low Noise Gallium Arsenide FET Part Number Ordering Information Part Number ATF-10100-GP1 ATF-10100-GP3 ATF-10100-GP6 Devices Per Tray 5 50 Up to 300 Thermal Resistance: 9^ = 225°C/W TCH = , HEWLETT mLUm PACKARD ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET Features · · · · Low Noise , 4 GHz High Output Power: 21.0 dBm typical P1 dB at 4 GHz Chip Outline Description The ATF-10100


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PDF ATF-10100 Total60 atf 204 ATF-10100-GP1
25C1815

Abstract: No abstract text available
Text: +175°C Part Number ATF-10100-GP1 ATF-10100-GP3 ATF-10100-GP6 Devices Per Tray 5 50 Up to 300 Symbol V , W L 'H M PACKARD WhoI H EW LETT ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET , Description The ATF-10100 is a high performance gallium arsenide Schottky-barrier-gate field effect , ATF-10100 , 0.5-12 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings Parameter Drain-Source , 4.0 6.0 8.010.012.0 Frequency, GHz Frequency, GHz 7-7 ATF-10100 , 0.5-12 GHz Low


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PDF ATF-10100 nit122 25C1815
ATF-10100

Abstract: No abstract text available
Text: ATF-10100-GP3 50 18 ATF-10100 N oise P aram eters: VDS = F re q . GHz N F0 dB M ag 2 V, IDS , , reliable device. Chip Outline D escription The ATF-10100 is a high perfor mance gallium arsenide , 5965-8702E ATF-10100 A bsolute M aximum I tatings Sym bol V ds Vgs V qd Ids Pt T ch T stg P , d G ain vs. Frequency. V d s = 2V, I d s = 25 mA, TA = 25 C. ATF-10100 Typical Perform ance, T A , ATF-10100 Chip D im ensions Note: Die thickness is 4.5 mil, and backside metallization is 200 A Ti


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PDF TF-10100 ATF-10100
AVANTEK transistor

Abstract: No abstract text available
Text: Information Absolute Maximum 1 +5 V Idss 430 mW 175°C -65°C to +175°C Part Number ATF-10100-GP1 ATF-10100-GP3 ATF-10100-GP6 Devices Per Tray 5 50 Up to 300 Symbol Vds Vgs Ids Pt Tch Tstg Typical , : 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB at 4 GHz ATF-10100 0.5-12 GHz Low , = 1 mA AVANTEK INC "p i 3 \ - < 5 5 ATF-10100 , 0.5-12 GHz Low Noise Gallium Arsenide FET , *. 3 \ - ¿1^5 20E D 00übfl44 T ATF-10100 , 0.5-12 GHz Low Noise Gallium Arsenide FET


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PDF ATF-10100 T31-2S AVANTEK transistor
1997 - GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Text: 12 5.0 2.2 9.0 [3] +18.0 85 mil plastic 5-71 ATF-10100 500 0.5 - 12 4


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PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
1997 - GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Text: 16 12 5.0 2.2 9.0[3] +18.0 85 mil plastic 5-71 ATF-10100 500 0.5 - 12


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PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Text: Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-13036 ATF-13136 ATF-13336 ATF-13284 ATF-13484 ATF-13786 Gate Width (jun) 500 250 750 500 500 250 750 500 500 500 250 250 250 250 250 250 Optimum Freq. Range (GHz) 0.5-12 2-18 0.5-6 0.5-10 0.5-12 2-16 0.5-6 0.5-10 0.5-12 0.5-12 2-16 2-16 2-16 1-16 1-16 1-12 Test Freq. (GHz) 4 12 4 4 4 12 4 4 4 4 12 12 12 4 4 10 NF. (dB) 0.5


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PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376
1997 - AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Text: -64023 . 4-183 ATF-10100 . 5-19 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
1997 - IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Text: -64023 . 4-183 ATF-10100 . 5-19 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
1997 - 5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Text: -64023 . 4-183 ATF-10100 . 5-19 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
1997 - HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Text: -64023 . 4-183 ATF-10100 . 5-19 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
PBYR10100

Abstract: L20A
Text: . 1060 1080 10100 Repetitive peak reverse voltage 60 80 100 V v*™ Crest working reverse voltage 60 , Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 1060 1080 10100 Vrrm Repetitive


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PDF PBYR10100 bb53131 T0220AC L20A
pbyr 1

Abstract: 20A SCHOTTKY BARRIER RECTIFIER PBYR10100 philips 4L2
Text: Average forward current PBYR- 1060 60 60 60 0.70 10 1080 80 80 80 0.70 10 10100 100 100 100 0.70 10 V V V , 1080 10100 VrRM Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse


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PDF PBYR10100 T0220AC pbyr 1 20A SCHOTTKY BARRIER RECTIFIER philips 4L2
Not Available

Abstract: No abstract text available
Text: . OF POSITIONS H DUAL 10-100 NOTE: Available only in multiples of ten NUMBER OF ROWS


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PDF
1999 - x050f

Abstract: 54mm Crane
Text: INSULATOR STYLE H TOTAL NUMBER OF POSITIONS DUAL 10-100 NOTE: Available in MULTIPLES OF TEN


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PDF OHYDWHG607 ISO9001 x050f 54mm Crane
1999 - US800

Abstract: Crane X050F
Text: PLATING (See Specs Below) G, F or T 10-100 D S NOTE: Not all pin lengths are stocked in all


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PDF ISO9001 US800 Crane X050F
1999 - X050F

Abstract: No abstract text available
Text: INSULATOR STYLE H DUAL TOTAL NUMBER OF POSITIONS 10-100 NOTE: Available only in MULTIPLES OF


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PDF 56WUDLJKW 22mm00008) ISO9001 X050F
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF
1998 - 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Text: No file text available


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PDF 5965-7732E 5968-2348E 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF
2006 - LL1608-F2N7S

Abstract: ATF34143 ATF-34143 601706 atf 36163 Low Noise Amplifier fet amplifier schematic schematic diagram DC amplifier 0805CS ATF-35143 ATF-36163
Text: No file text available


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PDF ATF-34143 ATF-34143 SC-70 OT-343) AV01-xxxxEN LL1608-F2N7S ATF34143 601706 atf 36163 Low Noise Amplifier fet amplifier schematic schematic diagram DC amplifier 0805CS ATF-35143 ATF-36163
1999 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 766WUDLJKW607 ISO9001
1999 - zo 103 ma 75 607

Abstract: ZO 103 MA 75 505 ATF-21186 P 1060 atf transistor zo 607 zo 607 MA ATF-21186-STR ATF-21186-TR1 5965-8716E
Text: No file text available


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PDF ATF-21186 ATF-21186 ATF-21186-TR1 ATF-21186-STR 5091-4862E 5965-8716E zo 103 ma 75 607 ZO 103 MA 75 505 P 1060 atf transistor zo 607 zo 607 MA ATF-21186-STR ATF-21186-TR1 5965-8716E
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