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AS29F400T-150TC datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
AS29F400T-150TC AS29F400T-150TC ECAD Model Alliance Semiconductor EEPROM Parallel Async Original PDF

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AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC 28K1 AS4LC1M16ES-50TC 120TC as7c3 AS29F040-120TC 1SPC AS29F200T
Text: 9F400B-150TC AS29F400B-15QT1 AS29F400T-150TC A529F400T-1 50TI AS29F400B-1S0SC AS29F400B-150SI AS29F400T


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PDF AS7C164- AS7C164-8JC 64-10JC AS7C164L-I AS7C164-12PC AS7C164L-1 AS7C164L-UJC AS7C2S6-12PC AS7C164-1SPC 64L-I5PC AS4C256K16F0-60JC AS7C164-20PC AS7CI64-20JC 28K1 AS4LC1M16ES-50TC 120TC as7c3 AS29F040-120TC 1SPC AS29F200T
29F400-70

Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Text: -120TC AS29F400B-120TI AS29F400B- 150TC AS29F400B-1S0TI 48-pin AS29F400T-5STC AS29F400T-70TC AS29F400T-90TC AS29F400T-120TC AS29F400T-150TC AS29F400T-70TI AS29F400T-90TI AS29F400T-I20TI AS29F400T-I50T1


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PDF AS29F400 512KX8 256KX16 wr-120TC AS29F400T-150TC AS29F400T-70TI AS29F400T-90TI AS29F400T-I20TI AS29F400T-I50T1 AS29F400B-55SC 29F400-70 programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
1996 - flash 29f400

Abstract: 29f400 1702 eprom MD 202 HV Component Associates AN 5011 P 512KO 1702 eprom programmer J-Squared Technologies 29F400-90
Text: -120TC AS29F400B-120TI AS29F400B- 150TC AS29F400B-150TI AS29F400T-55TC AS29F400T-70TC AS29F400T-70TI AS29F400T-90TC AS29F400T-90TI AS29F400T-120TC AS29F400T-120TI AS29F400T-150TC AS29F400T


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PDF 8/256K AS29F400 48-pin 44-pititute flash 29f400 29f400 1702 eprom MD 202 HV Component Associates AN 5011 P 512KO 1702 eprom programmer J-Squared Technologies 29F400-90
29F400-70

Abstract: 29f400 programming 29F400 9F400 29F400-90
Text: -90TC AS29F400B-90TI AS29F400B-120TC AS29F400B-120TI AS29F400B- 150TC AS29F400B-150TI AS29F400T-S5TC AS29F400T


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PDF AS29F400 512KX8/256KX16 S12KX8/256KX16 512KX8 256Kxl6 cycl9F400T-70TI AS29F400T-90TC AS29F400T-90TI AS29F400T-120TC AS29F400T-120TI 29F400-70 29f400 programming 29F400 9F400 29F400-90
AS19F

Abstract: 29F2C F002T
Text: 4 0 0 B 1 50TC A S2 9 F 4 0 0 B 1 SOT/ A S2 9F4 0 0T 150TC A S2 9F4 0 0T 150T1 A S2 9 F 4 0 0 B - IS


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PDF 150TC 150T1 -150SI 32-bit 64-bit 128-bit 128-bit AS19F 29F2C F002T
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF AS29F400 512KX8 256KX16 ip9F400T-1SOTC AS29F400T-ISOU AS29F400B-55SC AS29F400B* AS29F400B-70SI AS29F400B-90SC AS29F400B-90SI
150TC

Abstract: No abstract text available
Text: RESISTANCE: 5 G OHMS MINIMUM. WORKING VOLTAGE: 500 V.AC [rms], 3. WORKING TEMPERATURE: -65* TO + 150TC . 4


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PDF -D-5948 150TC. 150TC
LM136

Abstract: LT1009C LT1009M
Text: -474 - LT 1009 2.5V) T I «ïEîSrfCffiÂT-ïi,. o tbíjaBE-2.5V±0.2X o S4fp*HESSH' '400/iA~10mA o SbfPW Vt'-S'VX "0.6Q max O unííSLW:ax'"25pprn/'C max i'(i - 70 C J o LM136 ifiîti o/ï-y'r — i? 3t'y TO 46 / 3 t'y TO-92 yíWn? / .y (n— F -y F LD) LP) : 20mA /f : 10mA T0p¡ : 0~70"C ( LT1009C) -55~ + 125'C ( LT1009M) T,tn : -65— + 150TC 7V» : 300 *C • 10 sec m n 9J ffi # LT1009M LT1009C # tt « 'h « * « * * 'h m m ft * Vz 7z=lmA, T„=25t 2.495 2.5


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PDF 400/iA 25pprn/ LM136 LT1009C) LT1009M) 150TC LT1009M LT1009C 400/iASftSlà LT1009C LT1009M
GMCT34F000000

Abstract: No abstract text available
Text: MINIMUM. 3. WORKING TEMPERATURE: -65*C TO + 150TC . 4. DIMENSIONS ARE IN INCHES [MILLIMETERS], DATE REV


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PDF 150TC. 38THE GMCT34F000000 GMCT34F000000
MM74HC

Abstract: MM54HC AAMI FAJ 40 2C11 125t MM74HC4016 MM54HC4016 74HC 150TC
Text: ) -55— + 125t (MM54HC) T„e : -65— + 150TC Tn, : 260r • lOsec *i muviuxt>wi£ *2 ¡BSEX-i ~j-f-Xt


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PDF MM54HC4016, MM74HC4016 12VPeal -50ntyp MM74HC) MM54HC) 1000ns 500ns 400ns MM74HC MM54HC AAMI FAJ 40 2C11 125t MM54HC4016 74HC 150TC
HA1812PS

Abstract: HA1812 HA1812GS 67-5V
Text: HA1812GS/PS ^Ett&S T-r > rf, L fciftffl «EJtKgl T-, íttttt 5 v h • (- V tr ( t V ki'T-í- S. O -> SSK- - 200mA max o O y >r-8 -fe 5 í y í? DIL y-y (HA1812GS) 8 t'^ DIL -y •ir — v1 (HA1812PS) (1) *££Jt«U (fe., árfitaa-MLSidUEt Lfc«&) -29 (T„ = 25°C) Fcc : 20V Víc : Vcc Vi, : ±FCc"í" /„,» : 200mA /«.ra (rei.i) : 2mA ( V-;<.*«) /ra : +2mA (7-r - l-'s< y > SÍSffi) P„ : 800mW«2> : -25-+751C T,„: -65~ + 150TC (HA1812GS) -55~ + 125t: (HA1812PS) b.eV [7 [7 -E 3c


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PDF HA1812GS/PS 200mA HA1812GS) HA1812PS) 800mWÂ 150TC HA1812 HA1812PS HA1812 HA1812GS 67-5V
uPC71D

Abstract: PC71D uPC71 sS2000 RA710 150TC PC71
Text: - 22 - fi P C 7 1 2 i TJ V '* U - * -e, m W j A t f , S /v S O l/X v ^ r - y F f f i t J ¿ ^ : o - C T T L te ¿ 'c o i^ jlg f e ill llis t f à - T ío 0 T y 7 ¿ ^ ñ ^ J C Í i / í A 710 ¿ S ^ n T t Ë T * ^ ^ . (T . = 2 5 0 24V V ¡-c/? ± 7 V Fd + 5V ¡0 UT 10mA P d 500m W T apt - 2 0 - + 8 o r T slg - 5 5 ~ + 150TC uPC71D V + - V" o * M t-^ ïlT )£ © Ü S -+ 1 0 V - + 14VÍ iH ^ ifO - 5 V -8 V C m m m G {n-H-feiixfefK- 40ns o /-\ -y *r - 'J 8 tT v -tr V 5 -/ -7 D IL A y


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PDF 150TC uPC71D PC71D uPC71D PC71D uPC71 sS2000 RA710 150TC PC71
BC212C

Abstract: Transistor BC212 BC212
Text: M C C TO-92 P lastic-E n cap su late T ran sisto rs X 1 BC212,B,C TRANSISTOR(PNP) FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e s p e c ifie d ) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current


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PDF BC212 150TC BC212B BC212C 100MHz Transistor BC212
Not Available

Abstract: No abstract text available
Text: Test C ond itions lc«3mA. IB=0 lc-0.001m A, lE=0 I e " 0 01, Ic*0 Vet»15V, Ie*0 V cb*15V, Ie=0, Ta» 150TC


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PDF KSP5179 150TC 200MHz 200MHz
LM217HV

Abstract: LM317HV LM117HV
Text: — 191 — tHtms.^JWm T-,*«Effli®, »SMfcJiu: ASO itiJjn.B.U»-ttl~t y ? yu • * + > 3 t" V > i? rv- ■- fEfflSe&ffJ 5V Cs*r v V ■i ' IMIIiHV' -»out - V? ( - KH) K K) 60V M-C-hk -55~ + 150TC (LM117HV) -25~+150°C (LM217HV) 0~ + 125t; (LM317HV)


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PDF 150TC LM117HV) LM217HV) LM317HV) OtST/S125^ LM117HV/217HV LM317HV 10mAs7Ls/MAX LM217HV LM317HV LM117HV
Not Available

Abstract: No abstract text available
Text: International IÖR Rectifier Diodes V|=M @ 7 tX Part Number VM M (V) * fav @ (A) (q tc 'f(AV) (V) >FSM 50 Hi M H i (A) {A) r ©JC(DC) (°C/W) Notes Fax on Demand Number Case Outline Key Power Module TU0HF140 T110HF160 1400 1600 1!0 85 110 85 1.35 1.35 1700 1700 1780 1780 0.4 7 0.4 7 8 8 9 9 27 27 20094 20094 M3 NOTES'. 9 For Item: 100% V R R M reapplied, Tj=Tj max.= 150tC ft Value given lor RthJC is per module 9 Vim measured at Ti*25aC 97 R


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PDF TU0HF140 T110HF160 150tC
AD834

Abstract: AD834G
Text: (X1, X2, Yl, Y2) PD : 500mW Tm : 0 ~ 70t (AD834G) -55 ~ + 125 r (AD834S/883B) Tm : -65 ~ + 150TC (ttâ


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PDF AD834 500MHz ommWtl---280mWtyp 500mW AD834G) AD834S/883B) 150TC -60sec AD834G
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF S29F4O0T-55TC S29F4Q -150T3 S29F400T- 9F400B -150SI S29F400T -150SI AS29F400B-5 S29F400T-5
SR360

Abstract: sr52 1N5818
Text: -65TCto+125TC -65*C to + 150TC ~65*C to +150*c .57/*.70 10 60/*85 150 NOTES : 1.Operating temperature range


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PDF D0-41 D0-201AD 1N5817 1N5818 1N5819 SR130 SR150 SR160 1N5820 1N5821 SR360 sr52
HALF WAVE 45 E 57 20-C1V

Abstract: 30KF60E 30KF60B 125c049 545121
Text: / / / 25"C h 'i = 150TC i i / / / 1


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PDF 3A/600V/trr 60nsec 30KF60E 30KF60B 247AC 150TC DISSIPSAT10N 02s-J HALF WAVE 45 E 57 20-C1V 30KF60B 125c049 545121
30VF60

Abstract: 30VF60F
Text: T = 150TC 'Tj =25 'C -1-f I / / I 0.5 1 1.5 2 2.5 3


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PDF A/600V/trr 35nsec 30VF60 30VF60F O-251AA O-252AA 30VF60 38MAX 30VF60F
SHINDENGEN DIODE

Abstract: No abstract text available
Text: f f iH ü x '/W x y 3 y h V7 ^ -K IW B tfä c E l Surface Mounting Device Single Diode Schottky Barrier Diode OUTLINE DIMENSIONS ° ® D2FS6 Case : 2F ® o -w i} J hV 5 » 60V 1.5A ·/JvffiSM D · T j 150TC ·PnnsM T l ^ y - y x U U I · SR®S ·D C /D C U V A - ? ·m m , y - h . o a « ü 1 1 n n o ^ l.r < m 1 1 _ _ _ _ i\ 1 n i i r [m i Æ fê ü RATINGS A bsolute M ax im u m Ratings 3.1-i=L oL^T * Conditions ^ m m m my. Unit r Item Storage


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PDF 150TC SHINDENGEN DIODE
Not Available

Abstract: No abstract text available
Text: y a y h + M 'J 7 ^ i-K -y<>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S20SC9M Case : MT0-3P i 3.3 * 02 90V 20A m a •TÌ 150TC 7i^yiyxUÿi •P rrs m • e jc f iV Jv ÿ n ( 7 ) b m i§ Absolute Maximum Ratings * £ R Item Symbol Average Rectified Forward Current I fsm Peak Surge Forward Current Repetitive Peak Surge Reverse


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PDF S20SC9M 150TC 814EI
cx 2601

Abstract: TA8005F TA8005S a85r
Text: ,: -55— + 150TC Tpin : 2601 ■10 sec ■»»toíiMííevsF/jvSi7v, -4orar„a85r) M £ A «= TA8005F


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PDF TA8005F TA8005S TA8005F) TA8005S) 280mW 500mW 150TC TA8005F, cx 2601 TA8005F a85r
Not Available

Abstract: No abstract text available
Text: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à ® • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m ■Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë m Absolute Maximum Ratings ¥ t£ Unit Tstg — 4 0 ~ 150 V Tj 150 V 40 V 45 V 10 A 4k Storage Temperature Operating Junction Temperature


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PDF SF10SC4R 150TC
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