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Part Manufacturer Description Datasheet Download Buy Part
APTGT200H120G Microsemi Corporation Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, 12 PIN

APTGT200H120 datasheet (2)

Part Manufacturer Description Type PDF
APTGT200H120 Advanced Power Technology Full - Bridge Fast Trench + Field Stop IGBT Power Module Original PDF
APTGT200H120G Microsemi Full - Bridge Fast Trench + Field Stop IGBT Power Module Original PDF

APTGT200H120 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - APTGT200H120

Abstract: No abstract text available
Text: APTGT200H120 VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , . APT website ­ http://www.advancedpower.com 1-5 APTGT200H120 ­ Rev 0 Q1 G1 APTGT200H120 , 2-5 APTGT200H120 ­ Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT200H120 , APT website ­ http://www.advancedpower.com 3-5 APTGT200H120 ­ Rev 0 May, 2005 Package outline (dimensions in mm) APTGT200H120 Typical Performance Curve Output Characteristics (VGE =15V


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PDF APTGT200H120 APTGT200H120
2006 - APT0502

Abstract: APT0601 APTGT200H120G
Text: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , APTGT200H120G ­ Rev 1 Q1 G1 APTGT200H120G All ratings @ Tj = 25°C unless otherwise specified ICES , Characteristic mJ 2-5 APTGT200H120G ­ Rev 1 Electrical Characteristics APTGT200H120G Thermal and , www.microsemi.com 3-5 APTGT200H120G ­ Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT200H120G Typical Performance Curve Output Characteristics (VGE =15V) 400 TJ=125°C V GE


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PDF APTGT200H120G APT0502 APT0601 APTGT200H120G
Not Available

Abstract: No abstract text available
Text: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , www.microsemi.com 1-5 APTGT200H120G – Rev 1 Symbol VCES APTGT200H120G All ratings @ Tj = 25 , July, 2006 IRM Test Conditions mJ 2-5 APTGT200H120G – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200H120G Thermal and package characteristics , www.microsemi.com 3-5 APTGT200H120G – Rev 1 July, 2006 SP6 Package outline (dimensions in mm


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PDF APTGT200H120G
2011 - N-channel MOSFET 800v 50a to-247

Abstract: SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
Text: No file text available


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PDF 10F-A, N-channel MOSFET 800v 50a to-247 SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: No file text available


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
Text: No file text available


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PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
sot-227 footprint

Abstract: VRF2933 APT35GP120JDQ2 DRF1200 SP6-P ARF1511 ARF521 smps welder inverter APTGT25DA120D1G TO-247
Text: No file text available


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PDF
2012 - Not Available

Abstract: No abstract text available
Text: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , www.microsemi.com 1-6 APTGT200H120G – Rev 2 October, 2012 Symbol VCES APTGT200H120G All ratings @ Tj , 350 600 Unit V µA A 2.1 V ns µC mJ 2-6 APTGT200H120G – Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200H120G Thermal and package , outline (dimensions in mm) www.microsemi.com 3-6 APTGT200H120G – Rev 2 October, 2012 See


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PDF APTGT200H120G
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