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APT80GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 145A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3
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APT80GA90B datasheet (1)

Part Manufacturer Description Type PDF
APT80GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 80; Original PDF

APT80GA90B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - ic 4560

Abstract: APT80GA90B MIC4452
Text: APT80GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT80GA90B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT80GA90B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V


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PDF APT80GA90B ic 4560 APT80GA90B MIC4452
Not Available

Abstract: No abstract text available
Text: APT80GA90B_S TJ = 25° unless otherwise specifi ed C Test Conditions Min Typ Capacitance VGE = , , the specifications and information contained herein. Typical Performance Curves APT80GA90B_S , Performance Curves APT80GA90B_S 300 VCE = 600V TJ = 25°C, or 125°C RG = 4.7Ω L = 100μH 22 , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT80GA90B_S C , 2011 10 -5 052-6324 Rev C Z JC, THERMAL IMPEDANCE (°C/W) 0.25 APT80GA90B_S 10


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PDF APT80GA90B APT80GA90S switc16)
2011 - Not Available

Abstract: No abstract text available
Text: 1389 18 31 192 128 2813 2082 239 APT80GA90B_S Min Typ 4560 411 62 200 30 72 nC pF Parameter , . 052-6324 Rev C 6 - 2011 Typical Performance Curves 100 V GE APT80GA90B_S 350 TJ= 125°C TJ , 25°C, or 125°C RG = 4.7 L = 100H APT80GA90B_S 300 250 200 VGE =15V,TJ=125°C 150 VGE , Temperature 0 Typical Performance Curves 10000 Cies APT80GA90B_S 1000 IC, COLLECTOR CURRENT (A , , Junction-To-Case vs Pulse Duration 1 052-6324 Rev C 6 - 2011 APT80GA90B_S 10% Gate Voltage td(on


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PDF APT80GA90B APT80GA90S
2009 - APT80GA90S

Abstract: APT80GA90B MIC4452
Text: Charge Switching Safe Operating Area Turn-On Delay Time APT80GA90B_S TJ = 25°C unless otherwise , GE = 15V TJ= 125°C IC, COLLECTOR CURRENT (A) TJ= 55°C 80 APT80GA90B_S 350 TJ= 150 , Performance Curves APT80GA90B_S 300 VCE = 600V TJ = 25°C, or 125°C RG = 4.7 L = 100H 22 td(OFF , Performance Curves APT80GA90B_S 1000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 , . 052-6324 Rev B 3 - 2009 FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL APT80GA90B_S 10% Gate


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PDF APT80GA90B APT80GA90S APT80GA90S APT80GA90B MIC4452
single phase inverter IGBT

Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
Text: -247 4.0 APT80GA90B MOS 8 IGBT APT75DQ100BG 900 2.5V TO-247 5.0 APT31M100B2 MOS


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PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
Text: APT64GA90B APT80GA90B TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 14 17 20 30


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PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
Text: No file text available


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PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
2011 - N-channel MOSFET 800v 50a to-247

Abstract: SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
Text: APT64GA90B APT80GA90B Package Style TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or


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PDF 10F-A, N-channel MOSFET 800v 50a to-247 SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
2013 - LE79Q2281

Abstract: JANSR2N7261 IC ZL70572 GC4600 Dimming LED Driver aplications Dimming LED aplications datasheet transistor SI 6822 BR17 2N2907AUB 2N2369AU
Text: No file text available


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2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
2008 - pearson 411

Abstract: ic 4560 APT80GA90LD40 APT10035LLL MIC4452 power Diode 20A
Text: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT80GA90B2D40_LD40 TJ = 25°C unless otherwise , Characteristic / Test Conditions IF(AV) IF(RMS) IFSM APT80GA90B2D40_LD40 Maximum Average Forward Current , 3500 T = 125°C J V = 667V 350 50 TJ = -55°C 0 APT80GA90B2D40_LD40 400 trr , TJ = 25°C unless otherwise specified APT80GA90B2D40_LD40 Vr diF /dt Adjust +18V , APT80GA90B2D40 APT80GA90LD40 900V APT80GA90B2D40 High Speed PT IGBT POWER MOS 8® is a high


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PDF APT80GA90B2D40 APT80GA90LD40 pearson 411 ic 4560 APT80GA90LD40 APT10035LLL MIC4452 power Diode 20A
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