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Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
APT68GA60B2D40 Microsemi Corporation Insulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TMAX-3
APT68GA60B Microsemi Corporation Insulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

APT68GA60B datasheet (2)

Part Manufacturer Description Type PDF
APT68GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 68; Original PDF
APT68GA60B2D40 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 68; Original PDF

APT68GA60B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - APT68GA60B

Abstract: MIC4452 IGBT microsemi
Text: APT68GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT68GA60B G C E Single die IGBT TYPICAL APPLICATIONS , ) tr td(off) tf APT68GA60B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE


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PDF APT68GA60B APT68GA60B MIC4452 IGBT microsemi
2009 - Not Available

Abstract: No abstract text available
Text: +125°C 202 21 27 133 88 715 607 20 26 175 129 1117 1025 APT68GA60B_S Typ 5230 526 59 198 32 66 A nC , . 052-6326 Rev B 2 - 2009 Typical Performance Curves 120 100 80 60 40 20 0 V GE APT68GA60B_S 350 , 100H 250 APT68GA60B_S td(ON), TURN-ON DELAY TIME (ns) 200 VGE =15V,TJ=125°C 150 100 , , COLLECTOR CURRENT (A) 1000 APT68GA60B_S C, CAPACITANCE (pF) 100 1000 Coes 100 Cres 10 10 1 , THERMAL IMPEDANCE MODEL ZEXT .0584 .1809 052-6326 Rev B 2 - 2009 APT68GA60B_S 10% Gate


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PDF APT68GA60B APT68GA60S APT68GA60S
2009 - APT68GA60B

Abstract: APT68GA60S MIC4452
Text: - Collector Charge Switching Safe Operating Area Turn-On Delay Time APT68GA60B_S TJ = 25°C unless , CURRENT (A) GE APT68GA60B_S 350 Typical Performance Curves 25 td(OFF), TURN-OFF DELAY TIME , = 15V 20 15 10 5 0 0 20 APT68GA60B_S 250 30 40 60 200 VGE =15V,TJ , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT68GA60B_S 1000 Cies , 052-6326 Rev C ZJC, THERMAL IMPEDANCE (°C/W) 0.30 APT68GA60B_S 10% Gate Voltage TJ = 125


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PDF APT68GA60B APT68GA60S APT68GA60B APT68GA60S MIC4452
Not Available

Abstract: No abstract text available
Text: APT68GA60B_S TJ = 25° unless otherwise specifi ed C Test Conditions Min Typ Capacitance VGE = , . Typical Performance Curves APT68GA60B_S 350 120 GE = 15V TJ= 125°C 100 TJ= 150 , ¼H VGE = 15V 20 15 10 5 0 0 20 APT68GA60B_S 250 30 40 60 200 VGE , APT68GA60B_S 1000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 1000 Coes 100 , Pulse Duration 052-6326 Rev D 6 - 2011 Z JC, THERMAL IMPEDANCE (°C/W) 0.30 APT68GA60B_S


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PDF APT68GA60B APT68GA60S switchin51
2011 - 100c1a

Abstract: No abstract text available
Text: +125°C 202 21 27 133 88 715 607 20 26 175 129 1117 1025 APT68GA60B_S Typ 5230 526 59 198 32 66 A nC , . 052-6326 Rev D 6 - 2011 Typical Performance Curves 120 V GE APT68GA60B_S 350 300 TJ= 150°C IC , 250 APT68GA60B_S td(ON), TURN-ON DELAY TIME (ns) 25 200 VGE =15V,TJ=125°C 20 150 , APT68GA60B_S C, CAPACITANCE (pF) 100 1000 Coes 100 Cres 10 1 10 0 100 200 300 400 500 VCE , , Junction-To-Case vs Pulse Duration 052-6326 Rev D 6 - 2011 APT68GA60B_S 10% Gate Voltage td(on) 90% tr V


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PDF APT68GA60B APT68GA60S APT68GA60S 100c1a
single phase inverter IGBT

Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
Text: Output Power (kW) APT60N60BCSG CoolMOS APT40DQ60BG 600 45m TO-247 2.5 APT68GA60B


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PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
Text: APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO


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PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
Text: No file text available


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PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
2011 - N-channel MOSFET 800v 50a to-247

Abstract: SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
Text: APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40


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PDF 10F-A, N-channel MOSFET 800v 50a to-247 SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: APT68GA60B APT80GA60B APT102GA60B2 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or , APT68GA60B2D40 APT80GA60LD40 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® T-MAX® or TO-264 TO


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
2013 - LE79Q2281

Abstract: JANSR2N7261 IC ZL70572 GC4600 Dimming LED Driver aplications Dimming LED aplications datasheet transistor SI 6822 BR17 2N2907AUB 2N2369AU
Text: No file text available


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PDF
2010 - APT68GA60LD40

Abstract: MIC4452 APT68GA60B2D40
Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT68GA60B2D40 when switching at high frequency. TO -2 47 Combi (IGBT and Diode


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PDF APT68GA60LD40 APT68GA60B2D40 APT68GA60LD40 MIC4452 APT68GA60B2D40
2008 - 400v 20A ultra fast recovery diode

Abstract: TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452
Text: SSOA td(on) tr td(off) tf APT68GA60B2D40_LD40 TJ = 25°C unless otherwise specified Typ , / Test Conditions APT68GA60B2D40_LD40 Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5 , -55°C 0 APT68GA60B2D40_LD40 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction , otherwise specified APT68GA60B2D40_LD40 Vr diF /dt Adjust +18V APT40GT60BR 0V D.U.T. 30H , APT68GA60B2D40 APT68GA60LD40 600V APT68GA60B2D40 High Speed PT IGBT POWER MOS 8® is a high


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PDF APT68GA60B2D40 APT68GA60LD40 400v 20A ultra fast recovery diode TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452
2011 - APT68GA60B

Abstract: No abstract text available
Text: APT68GA60LD40 APT68GA60B2D40 600V High Speed PT IGBT APT68GA60LD40 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent , , even APT68GA60B2D40 when switching at high frequency. TO -24 7 Combi (IGBT and Diode


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PDF APT68GA60LD40 APT68GA60B2D40 APT68GA60LD40 APT68GA60B2D40 O-247 APT68GA60B
Not Available

Abstract: No abstract text available
Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT68GA60B2D40 when switching at high frequency. TO -24 7 Combi (IGBT and Diode


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PDF APT68GA60LD40 APT68GA60B2D40 O-247
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