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Part Manufacturer Description Datasheet Download Buy Part
APT64GA90B2D30 Microsemi Corporation Insulated Gate Bipolar Transistor, 117A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TMAX-3
APT64GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 117A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3

APT64GA90B datasheet (2)

Part Manufacturer Description Type PDF
APT64GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 64; Original PDF
APT64GA90B2D30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; Original PDF

APT64GA90B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 3525 boost

Abstract: IGBT full bridge APT64GA90B MIC4452
Text: APT64GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT64GA90B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT64GA90B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V


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PDF APT64GA90B 3525 boost IGBT full bridge APT64GA90B MIC4452
Not Available

Abstract: No abstract text available
Text: Switching Safe Operating Area Turn-On Delay Time APT64GA90B_S TJ = 25° unless otherwise specifi ed , . Typical Performance Curves APT64GA90B_S 300 100 V GE = 15V IC, COLLECTOR CURRENT (A , (NORMALIZED) 1.15 Typical Performance Curves APT64GA90B_S 200 VCE = 600V TJ = 25°C, or 125 , Losses vs Junction Temperature Typical Performance Curves APT64GA90B_S 1000 10,000 1,000 , 052-6325 Rev D Z JC, THERMAL IMPEDANCE (°C/W) 0.30 APT64GA90B_S 10% TJ = 125°C Gate


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PDF APT64GA90B APT64GA90S
2011 - Not Available

Abstract: No abstract text available
Text: TJ = +125°C 18 26 131 104 1192 1088 17 27 181 171 1857 2311 193 APT64GA90B_S Typ 3525 318 53 162 , 100 V GE APT64GA90B_S 300 15V 13V 11V 10V 200 9V 8V 7V 50 6V = 15V TJ= 55°C TJ= 125°C IC , (OFF), TURN-OFF DELAY TIME (ns) VCE = 600V TJ = 25°C, or 125°C RG = 4.7 L = 100H APT64GA90B_S , APT64GA90B_S 1,000 10 Coes 100 1 Cres 0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER , , Junction-To-Case vs Pulse Duration 10 052-6325 Rev D 6 - 2011 APT64GA90B_S 10% Gate Voltage td(on


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PDF APT64GA90B APT64GA90S APT64GA90S
APT64GA90B

Abstract: MIC4452 DIODE 76A
Text: (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT64GA90B_S , contained herein. Typical Performance Curves 100 V GE = 15V APT64GA90B_S 300 TJ= 55 , ) APT64GA90B_S 200 20 18 16 14 12 VGE =15V,TJ=125°C 160 120 VGE =15V,TJ=25°C 80 40 VCE , Temperature Typical Performance Curves APT64GA90B_S 1000 10,000 IC, COLLECTOR CURRENT (A) C , APT64GA90B_S 10% TJ = 125°C Gate Voltage td(on) APT30DQ100 90% tr IC V CC V CE


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PDF APT64GA90B APT64GA90S APT64GA90B MIC4452 DIODE 76A
2009 - APT64GA90B

Abstract: MIC4452 DIODE 76A
Text: (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT64GA90B_S , contained herein. Typical Performance Curves 100 V GE = 15V APT64GA90B_S 300 TJ= 55 , ) APT64GA90B_S 200 20 18 16 14 12 VGE =15V,TJ=125°C 160 120 VGE =15V,TJ=25°C 80 40 VCE , Temperature Typical Performance Curves APT64GA90B_S 1000 10,000 1,000 Coes 100 Cres 10 , IMPEDANCE (°C/W) 0.30 APT64GA90B_S 10% TJ = 125°C Gate Voltage td(on) APT30DQ100 90


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PDF APT64GA90B APT64GA90S APT64GA90B MIC4452 DIODE 76A
single phase inverter IGBT

Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
Text: APT40DQ100BG 800 200m T-Max 2.7 APT64GA90B MOS 8 IGBT APT60DQ100BG 900 2.5V TO


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PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
Text: No file text available


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PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
2011 - N-channel MOSFET 800v 50a to-247

Abstract: SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
Text: APT64GA90B APT80GA90B Package Style TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40


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PDF 10F-A, N-channel MOSFET 800v 50a to-247 SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
Text: APT64GA90B APT80GA90B TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 14 17 20 30


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PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO , -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
2013 - LE79Q2281

Abstract: JANSR2N7261 IC ZL70572 GC4600 Dimming LED Driver aplications Dimming LED aplications datasheet transistor SI 6822 BR17 2N2907AUB 2N2369AU
Text: No file text available


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2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Not Available

Abstract: No abstract text available
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT64GA90B2D30 when switching at high frequency. TO -24 7 Combi (IGBT and Diode


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PDF APT64GA90LD30 APT64GA90B2D30 O-247
2008 - APT64GA90B2D30

Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
Text: SSOA td(on) tr td(off) tf APT64GA90B2D30_LD30 TJ = 25°C unless otherwise specified Typ , / Test Conditions APT64GA90B2D30_LD30 Maximum Average Forward Current (TC = 102°C, Duty Cycle = 0.5 , (ns) 500 90 APT64GA90B2D30_LD30 0.6 30 25 20 0.4 Qrr 15 10 0.2 5 0.0 , specified APT64GA90B2D30_LD30 Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30H trr/Qrr , APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8® is a high


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PDF APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
2010 - IGBT 900v 60a

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT64GA90B2D30 when switching at high frequency. TO -2 47 Combi (IGBT and Diode


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PDF APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
2011 - Not Available

Abstract: No abstract text available
Text: APT64GA90LD30 APT64GA90B2D30 900V High Speed PT IGBT APT64GA90LD30 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent , , even APT64GA90B2D30 when switching at high frequency. TO -24 7 Combi (IGBT and Diode


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PDF APT64GA90LD30 APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 O-247
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