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APT35GA90BD15 Microsemi Corporation Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
APT35GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3
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APT35GA90B datasheet (2)

Part Manufacturer Description Type PDF
APT35GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original PDF
APT35GA90BD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original PDF

APT35GA90B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - IGBT microsemi

Abstract: APT35GA90B MIC4452 power PFC max1934
Text: APT35GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT35GA90B G C E Single die IGBT TYPICAL APPLICATIONS , SSOA td(on) tr td(off) tf APT35GA90B TJ = 25°C unless otherwise specified Min Typ


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PDF APT35GA90B IGBT microsemi APT35GA90B MIC4452 power PFC max1934
2009 - APT35GA90B

Abstract: APT35GA90S MIC4452
Text: - Collector Charge Switching Safe Operating Area Turn-On Delay Time APT35GA90B_S TJ = 25°C unless , (A) GE APT35GA90B_S 250 0 20 5 40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge , (ns) 15 APT35GA90B_S 200 13 12 11 160 VGE =15V,TJ=125°C 120 80 40 0 5 , Typical Performance Curves APT35GA90B_S 10,000 200 100 1,000 100 Coes Cres 10 1 , , THERMAL IMPEDANCE (°C/W) 0.50 APT35GA90B_S 10% Gate Voltage TJ = 125°C td(on) 90


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PDF APT35GA90B APT35GA90S APT35GA90B APT35GA90S MIC4452
Not Available

Abstract: No abstract text available
Text: Eon2 td(off) APT35GA90B_S TJ = 25° unless otherwise specifi ed C 144 IC = 18A RG = , APT35GA90B_S 250 60 V 15V = 15V 13V TJ= 125°C 50 IC, COLLECTOR CURRENT (A) IC , ) 15 APT35GA90B_S 200 13 12 11 160 VGE =15V,TJ=125°C 120 80 40 0 5 10 , Losses vs Junction Temperature Typical Performance Curves APT35GA90B_S 200 10,000 100 1 , Duration 1 052-6332 Rev D 5 - 2011 Z JC, THERMAL IMPEDANCE (°C/W) 0.50 APT35GA90B_S 10


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PDF APT35GA90B APT35GA90S
2011 - Not Available

Abstract: No abstract text available
Text: 14 154 144 1044 907 APT35GA90B_S Min Typ 1934 173 28 84 14 34 A nC pF Parameter Input , Rev D 5 - 2011 Typical Performance Curves 60 V GE APT35GA90B_S 250 15V 13V IC, COLLECTOR , TIME (ns) VCE = 600V TJ = 25°C, or 125°C RG = 10 L = 100H APT35GA90B_S 200 14 160 VGE =15V , IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100 APT35GA90B_S 10 100 Coes Cres 1 , - 2011 APT35GA90B_S 10% Gate Voltage td(on) 90% tr V CC IC V CE TJ = 125°C APT30DQ120


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PDF APT35GA90B APT35GA90S
smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
Text: -247 or D3 TO-247 or D3 T-MAX® or TO-264 8 10 13 19 23 APT27GA90K APT35GA90B APT43GA90B , ISOTOP® TO-264 TO-264 8 10 13 21 19 23 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30


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PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
Text: No file text available


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PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
2011 - N-channel MOSFET 800v 50a to-247

Abstract: SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
Text: APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40


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PDF 10F-A, N-channel MOSFET 800v 50a to-247 SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO , -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
2013 - LE79Q2281

Abstract: JANSR2N7261 IC ZL70572 GC4600 Dimming LED Driver aplications Dimming LED aplications datasheet transistor SI 6822 BR17 2N2907AUB 2N2369AU
Text: No file text available


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2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
2009 - APT35GA90BD15

Abstract: MIC4452 full wave BRIDGE RECTIFIER 1044
Text: APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT35GA90BD15 TJ = 25°C unless otherwise specified Typ 173 f = , APT35GA90BD15 250 Typical Performance Curves 200 VCE = 600V TJ = 25°C, or 125°C RG = 10 L = 100H 14 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 APT35GA90BD15


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PDF APT35GA90BD15 APT35GA90BD15 MIC4452 full wave BRIDGE RECTIFIER 1044
2009 - full wave BRIDGE RECTIFIER 1044

Abstract: DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15
Text: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT35GA90BD_SD15 TJ = 25°C unless otherwise , , COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) GE APT35GA90BD_SD15 250 Typical Performance , (ns) td(ON), TURN-ON DELAY TIME (ns) 15 APT35GA90BD_SD15 13 12 11 160 VGE =15V , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT35GA90BD_SD15 200 , TC 1 052-6344 Rev D 7 - 2009 ZJC, THERMAL IMPEDANCE (°C/W) 0.50 APT35GA90BD_SD15


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PDF APT35GA90BD15 APT35GA90SD15 full wave BRIDGE RECTIFIER 1044 DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15
full wave BRIDGE RECTIFIER 1044

Abstract: APT35GA90BD15 MIC4452
Text: APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT35GA90BD15 TJ = 25°C unless otherwise specified Typ 173 f = , APT35GA90BD15 250 Typical Performance Curves 200 VCE = 600V TJ = 25°C, or 125°C RG = 10 L = 100H 14 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 APT35GA90BD15


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PDF APT35GA90BD15 full wave BRIDGE RECTIFIER 1044 APT35GA90BD15 MIC4452
2011 - full wave BRIDGE RECTIFIER 1044

Abstract: No abstract text available
Text: Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 18A RG = 104 TJ = +125°C 105 APT35GA90BD_SD15 Min , Rev E 5 - 2011 Typical Performance Curves 60 V GE APT35GA90BD_SD15 250 15V 13V IC , °C RG = 10 L = 100H APT35GA90BD_SD15 200 td(OFF), TURN-OFF DELAY TIME (ns) 14 160 VGE =15V,TJ , IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100 APT35GA90BD_SD15 10 100 Coes 10 Cres 1 , 052-6344 Rev E 5 - 2011 APT35GA90BD_SD15 10% Gate Voltage td(on) 90% tr V CC IC V CE TJ = 125


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PDF APT35GA90BD15 APT35GA90SD15 Ver18) full wave BRIDGE RECTIFIER 1044
Not Available

Abstract: No abstract text available
Text: ) APT35GA90BD_SD15 TJ = 25° unless otherwise specifi ed C 144 IC = 18A RG = 10 ns 1044 4 μJ , APT35GA90BD_SD15 250 60 V 15V = 15V 13V TJ= 125°C 50 IC, COLLECTOR CURRENT (A) IC , (ns) td(ON), TURN-ON DELAY TIME (ns) APT35GA90BD_SD15 13 12 11 160 VGE =15V,TJ , APT35GA90BD_SD15 200 10,000 100 1,000 100 Coes 10 Cres 1 IC, COLLECTOR CURRENT (A) C , (°C/W) 0.50 APT35GA90BD_SD15 10% Gate Voltage TJ = 125°C td(on) 90% APT30DQ120


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PDF APT35GA90BD15 APT35GA90SD15 APP61
2008 - DIODE ED 15

Abstract: high speed diode 15A APT10035LLL APT35GA90BD15 MIC4452 apt10035
Text: APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT35GA90BD15 TJ = 25°C unless otherwise specified Typ 145 f = , otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions APT35GA90BD15 IF(RMS , T = 125°C J V = 667V 30A 40 0 APT35GA90BD15 70 60 50 40 30 20 10 0 1 10


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PDF APT35GA90BD15 DIODE ED 15 high speed diode 15A APT10035LLL APT35GA90BD15 MIC4452 apt10035
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