The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
APT12057B2FLLG Microsemi Corporation Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
APT12057LFLLG Microsemi Corporation Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
APT1204R7BFLLG Microsemi Corporation Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
APT12031JFLL Microsemi Corporation Power Field-Effect Transistor, 30A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
APT12057JLL Microsemi Corporation Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
APT12067JLL Microsemi Corporation Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
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Search Stock (18)

  You can filter table by choosing multiple options from dropdownShowing 18 results of 18
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
APT1201R2BLLG Microsemi Corporation Richardson RFPD - - -
APT1201R4BFLLG Microsemi Corporation Richardson RFPD 1,350 $14.72 $13.97
APT1201R4SFLLG Microsemi Corporation Richardson RFPD - $14.71 $13.96
APT1201R6BVFRG Microsemi Corporation Richardson RFPD - $11.97 $11.37
APT1201R6BVFRG Microsemi Corporation Future Electronics - $15.77 $11.83
APT1201R6BVFRG Microsemi Corporation Chip1Stop 30 $12.45 $12.45
APT1201R6BVFRG Microsemi Corporation Chip1Stop 30 $12.45 $12.45
APT12031JFLL Microsemi Corporation Richardson RFPD - - -
APT12040JVFR Microwave Semiconductor Chip One Exchange 44 - -
APT12040JVR Microsemi Corporation Richardson RFPD 228 $85.00 $78.00
APT12040L2FLLG Microsemi Corporation Richardson RFPD - $46.05 $43.72
APT1204R7SFLLG Microsemi Corporation Richardson RFPD - $7.48 $7.10
APT1204R7SFLLG Microsemi Corporation New Advantage Corporation 60 $10.69 $9.97
APT12057JFLL Microsemi Corporation Richardson RFPD 1 $29.20 $29.20
APT12057JFLL Microsemi Corporation Chip1Stop 1 $55.50 $55.50
APT12057LFLLG Microsemi Corporation Richardson RFPD - $26.35 $25.01
APT12060LVRG Microsemi Corporation Richardson RFPD - - -
APT12067JFLL Microsemi Corporation Richardson RFPD - $30.19 $28.66

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APT120 datasheet (93)

Part Manufacturer Description Type PDF
APT-120 Abracon LAN Coupling Transformer (10Base-T and Ethernet) Original PDF
APT1201R2BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
APT1201R2BFLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 12A TO-247 Original PDF
APT1201R2BLL Advanced Power Technology POWER MOS 7 1200V 12A 1.200 Ohm Original PDF
APT1201R2BLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
APT1201R2SFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
APT1201R2SLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
APT1201R2SLL Advanced Power Technology POWER MOS 7 1200V 12A 1.200 Ohm Original PDF
APT1201R4BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
APT1201R4BFLLG Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A TO-247 Original PDF
APT1201R4BLL Advanced Power Technology POWER MOS 7 1200V 9A 1.400 Ohm Original PDF
APT1201R4BLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
APT1201R4SFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
APT1201R4SLL Advanced Power Technology POWER MOS 7 1200V 9A 1.400 Ohm Original PDF
APT1201R4SLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
APT1201R5BFVR Others Power MOS V, 1200V 10A, MOS-FET N-Channel enhanced Original PDF
APT1201R5BVFR Microsemi Power MOS V FREDFET Original PDF
APT1201R5BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
APT1201R5SFVR Others Power MOS V, 1200V 10A, MOS-FET N-Channel enhanced Original PDF
APT1201R5SVFR Microsemi Power MOS V FREDFET Original PDF

APT120 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - ethernet transformer centre tap

Abstract: APT-114 APT-117 APT-122 ALAN-1112 APT120
Text: CONFIGURATIONS P/N1 APT-117 APT-120 APT-123-101 APT-123-151 APT-123-750 APT-124-101 APT-124-151 APT


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PDF 10Base-T IEEE/ISO8802 ALAN-1062 ALAN-1072 ALAN-1092 ALAN-1112 ALAN-1152 ethernet transformer centre tap APT-114 APT-117 APT-122 ALAN-1112 APT120
2002 - ALAN-107

Abstract: 10BASE ALAN-106 ALAN-109 0310MAX
Text: -117 APT-120 APT-123-101 APT-123-151 APT-123-750 APT-124-101 APT-124-151 APT-124-750 APT-16001 APT


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PDF 10Base-T, 10Base-T IEEE/ISO8802 10BASE ALAN-106 ALAN-107 ALAN-109 ALAN-1102 ALAN-1112 ALAN-1152 0310MAX
2002 - Not Available

Abstract: No abstract text available
Text: Number1 APT-117 APT-120 APT-123-101 APT-123-151 APT-123-750 APT-124-101 APT-124-151 APT-124-750 APT


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PDF 10Base-T, 10Base-T IEEE/ISO8802 10BASE ALAN-1062 ALAN-1072 ALAN-1092 ALAN-1102 ALAN-1112 500MAX
2002 - ALAN-116

Abstract: No abstract text available
Text: Number1 APT-117 APT-120 APT-123-101 APT-123-151 APT-123-750 APT-124-101 APT-124-151 APT-124-750 APT


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PDF 10Base-T, 10Base-T IEEE/ISO8802 10BASE ALAN-1062 ALAN-1072 ALAN-1092 ALAN-1102 ALAN-1112 500MAX ALAN-116
2002 - APT1204R7KLL

Abstract: apt1204r7
Text: APT1204R7KLL 1200V 3.5A 4.70 R POWER MOS 7 MOSFET ® Power MOS 7 is a new generation , . APT1204R7KLL UNIT 1200 Parameter Volts Drain-Source Voltage 3.5 Continuous Drain Current @ , CHARACTERISTICS Symbol APT1204R7KLL Characteristic Test Conditions MIN TYP MAX Ciss Input , IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT1204R7KLL Graph , , HIGH VOLTAGE OUTPUT CHARACTERISTICS APT1204R7KLL 3,000 14 OPERATION HERE LIMITED BY RDS (ON


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PDF APT1204R7KLL O-220 O-220 APT1204R7KLL apt1204r7
2002 - Not Available

Abstract: No abstract text available
Text: APT12040L2LL 1200V 30A 0.400W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower , . APT12040L2LL UNIT 1200 Parameter Volts Drain-Source Voltage AL IC HN EC ION T T CE MA , APT12040L2LL DYNAMIC CHARACTERISTICS Symbol Characteristic MIN Test Conditions TYP Ciss


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PDF APT12040L2LL O-264 O-264
2005 - APT1201R5BVFR

Abstract: APT1201R5SVFR
Text: APT1201R5BVFR APT1201R5SVFR 1.500 1200V 10A POWER MOS V ® TO-247 Power MOS V® is a , All Ratings: TC = 25°C unless otherwise specified. Parameter APT1201R5BVFR_SVFR UNIT 1200 , DYNAMIC CHARACTERISTICS APT1201R5BVFR_SVFR Characteristic Symbol Test Conditions MIN TYP , =5.5V, 6V, 7V, 10V &15V 0 0 20 APT1201R5BVFR_SVFR 20 ID, DRAIN CURRENT (AMPERES) ID , DC 0.1 20 APT1201R5BVFR_SVFR 15,000 10µS C, CAPACITANCE (pF) ID, DRAIN CURRENT


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PDF APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR APT1201R5SVFR
Not Available

Abstract: No abstract text available
Text: APT12057B2FLL APT12057LFLL 1200V 22A 0.570Ω POWER MOS 7 R FREDFET B2FLL  , specified. Parameter APT12057B2FLL_LFLL UNIT 1200 Volts Drain-Source Voltage ID , 7-2004 IDSS 2 TYP 050-7083 Rev C Symbol APT12057 B2FLL_LFLL DYNAMIC CHARACTERISTICS , PULSE DURATION 1.0 APT12057 B2FLL_LFLL Typical Performance Curves 50 0.0272 Power , APT12057 B2FLL_LFLL 20,000 88 10,000 100µS 10 5 D = 22A 12 VDS=100V VDS=250V 8


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PDF APT12057B2FLL APT12057LFLL O-264 O-264 O-247
APT12060L

Abstract: No abstract text available
Text: APT12060B2VFR APT12060LVFR 1200V 20A 0.600Ω POWER MOS V ® T-MAX™ Power MOS V® is a , APT12060B2VFR_LVFR UNIT 1200 Volts Drain-Source Voltage 20 Continuous Drain Current @ TC = 25°C 1 , THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT12060B2VFR_LVFR , APT12060B2VFR_LVFR 40,000 OPERATION HERE LIMITED BY RDS (ON) 50 100µS 10 C, CAPACITANCE (pF) ID , 050-5845 Rev A Symbol DYNAMIC CHARACTERISTICS APT12060B2VFR _ LVFR TYP MAX VGS = 0V 7545


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PDF APT12060B2VFR APT12060LVFR O-264 APT12060B2VFR O-247 APT12060L
APT12031

Abstract: No abstract text available
Text: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET ® Symbol VDSS ID SO "UL , APT12031JLL UNIT 1200 Volts Drain-Source Voltage 30 Continuous Drain Current @ TC = 25° C , 050-7080 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT12031JLL Test Conditions , , JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT12031JLL 80 RC MODEL Junction , IMPEDANCE MODEL APT12031JLL 30,000 OPERATION HERE LIMITED BY RDS (ON) 100µS 10 1mS TC


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PDF APT12031JLL OT-227 APT12031
2004 - APT1201R2BFLL

Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Text: APT1201R2BFLL (G) APT1201R2SFLL (G) 1200V 12A 1.25 POWER MOS 7 R BFLL FREDFET D3PAK , -247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1201R2BFLL_SFLL , CHARACTERISTICS Symbol APT1201R2BFLL_ SFLL Test Conditions Characteristic C iss Input Capacitance , =15,10 & 8V 20 0 Case temperature. (°C) 30 APT1201R2BFLL_SFLL 25 48 5,000 , ) OPERATION HERE LIMITED BY RDS (ON) 050-7393 Rev C APT1201R2BFLL_SFLL 10,000 10 1000 800


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PDF APT1201R2BFLL APT1201R2SFLL O-247 O-247 APT1201R2BFLLG 1400G
Not Available

Abstract: No abstract text available
Text: ADVANCED P o w er Te c h n o l o g y ' POWER MOS V APT1201R5BVR 1200V 10A 1.500Q Power M O S V i s a new generation of high voltage N-Channel enhancement mode power M OSFETs. This new technology minimizes the JF E T effect, increases packing density and reduces the on-resistance. Power M OS V , : T c = 25°C u nless otherw ise specified. APT1201R5BVR UNIT Volts Amps Parameter Drain-Source , hord Page 210 DYNAMIC CH AR ACTER ISTICS Symbol C.ISS C oss C rss APT1201R5BVR Test


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PDF APT1201R5BVR TQ-247 APT1201R5BVR Dissipa50 MIL-STD-750 O-247AD
2002 - TC 7107

Abstract: No abstract text available
Text: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg , Ratings: TC = 25°C unless otherwise specified. APT1201R2 Parameter UNIT AL IC HN EC ION T T , Characteristic / Test Conditions 050-7107 Symbol DYNAMIC CHARACTERISTICS Symbol APT1201R2 BLL - SLL


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PDF APT1201R2BLL APT1201R2SLL O-247 O-247 TC 7107
1999 - BD 143

Abstract: bd 426 h 033 APT12040JVR
Text: APT12040JVR 1200V 26A 0.400W POWER MOS V ® S S Power MOS V® is a new generation of , RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APT12040JVR UNIT , Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT12040JVR Characteristic Test , PULSE DURATION lbin APT12040JVR 50 VGS=6V, 7V, 10V & 15V 5V 40 30 20 4.5V 10 , VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Ciss 1,000 .1 20 APT12040JVR


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PDF APT12040JVR OT-227 E145592 BD 143 bd 426 h 033 APT12040JVR
Not Available

Abstract: No abstract text available
Text: APT12067JFLL 1200V 17A 0.670Ω POWER MOS 7 R ® Symbol VDSS SO "UL Recognized , Parameter APT12067JFLL UNIT 1200 Volts Drain-Source Voltage ID Continuous Drain Current , ://www.advancedpower.com µA 2-2004 IDSS 2 TYP 050-7089 Rev B Symbol APT12067JFLL DYNAMIC , APT12067JFLL 40 VGS =15,10 & 8V Junction temp. (C) 0.0497 Power (watts) 0.180 0.0393 , ) APT12067JFLL 20,000 68 0 20 40 60 80 100 120 140 160 180 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12


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PDF APT12067JFLL OT-227
Not Available

Abstract: No abstract text available
Text: APT1201R6BVFR APT1201R6SVFR 8A 1.600Ω 1200V POWER MOS V® FREDFET BVFR TO , 25°C unless otherwise specified. APT1201R6BVFR_SVFR UNIT 1200 Parameter Volts , CHARACTERISTICS Symbol APT1201R6BVFR_SVFR Test Conditions Characteristic Gate-Source Charge f = 1 , EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT1201R6BVFR_SVFR 10 VGS , TEMPERATURE 050-5849 Rev A ID, DRAIN CURRENT (AMPERES) 10 APT1201R6BVFR_SVFR 50 100µS


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PDF APT1201R6BVFR APT1201R6SVFR O-247 O-247 APT1201R6BVFR Continu10 100mS
Not Available

Abstract: No abstract text available
Text: V DSS 'd 'dm V GS V GSM All Ratings: Tc = 25°C unless otherwise specified. APT1201R6BVR 1200 8 , J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol C.IS S APT1201R6BVR Test , APT1201R6BVR c APT1201R6BVR oe LU LU CL CC < LU o o LU C C en


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PDF O-247 APT1201R6BVR
pt1502

Abstract: pt-2102 pt2102 pt1202 BHRH pt1502gf pt1102gf pt2302 PT050
Text: —Pt1202Gf 27.94 30.48 PHaOOl-Pt1302Gf 30.48 33.02 PHaOOl-Pt1402Gf 33.02 35.56 PHaOOl -Pt1502Gf 35.56


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PDF 11/MAY/06* PHa001-PtXX02Gf 54mmX2 STOl-Pt2202Gf -Pt2302Gf PHaOOl-Pt2402Gf PHaOOl-Pt2502Gf PHaOOl-Pt2602Gf PHaOOl-Pt2702Gf PHaOOl-Pt2802Gf pt1502 pt-2102 pt2102 pt1202 BHRH pt1502gf pt1102gf pt2302 PT050
2001 - mj 1504 transistor equivalent

Abstract: ARF450 FREDFETs APT1208 APT100S20B APT60M75JVR transistors mj 1504 APT60GF120JRD APT4014BVR APT1201R2BLL
Text: 2500 3000 3200 3600 2500 3600 APT12067JLL APT12057JLL APT12040JLL APT12031JLL APT10045JLL , APT1201R4BLL APT1201R2BLL APT10090BLL APT10078BLL APT8052BLL APT8043BLL APT6038BLL APT6029BLL , 0.350 APT12067B2LL 211 126 3000 APT12057B2LL 570 169 112 2500 APT10045B2LL , 1500 TO-247 Part Number APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR , Style Part Number APT12080B2VR APT12060B2VR APT10050B2VR APT10040B2VR APT8030B2VR APT8024B2VR


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2013 - Not Available

Abstract: No abstract text available
Text: APT120GR120D APT120GR120D 1200V, 120A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT Die® The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed , Charge td(on) Turn-On Delay Time APT120GR120D Test Conditions Min Typ Capacitance , information contained herein. APT120GR120D 052-6422 Rev A 10-2013 DIE DRAWING APT120GR120D


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PDF APT120GR120D
2002 - APT12040

Abstract: No abstract text available
Text: APT12040JLL 1000V 24A 0.400W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction , : TC = 25°C unless otherwise specified. APT12040JLL Parameter UNIT AL IC HN EC ION T T , 97 61 050-7124 Rev A 12-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT12040JLL MIN


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PDF APT12040JLL OT-227 APT12040
2004 - APT1204R7SFLL

Abstract: APT1204R7BFLL
Text: APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700 POWER MOS 7 R FREDFET D3PAK , All Ratings: TC = 25°C unless otherwise specified. Parameter APT1204R7BFLL_SFLL UNIT 1200 , CHARACTERISTICS Symbol APT1204R7 BFLL_SFLL Characteristic Test Conditions MIN TYP MAX 716 , DURATION 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Graph Deleted APT1204R7 , ) APT1204R7 BFLL_SFLL 3,000 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05


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PDF APT1204R7BFLL APT1204R7SFLL O-247 O-247 APT1204R7SFLL APT1204R7BFLL
2004 - Midcom

Abstract: APT12080JVFR
Text: APT12080JVFR 1200V POWER MOS V ® S S 27 2 T- D G Power MOS V® is a new , . Parameter APT12080JVFR UNIT 1200 Volts Drain-Source Voltage 15 Continuous Drain Current , 050-5842 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT12080JVFR Test Conditions , APT12080JVFR 30 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 30 100µS OPERATION , OPERATING AREA 4 0 APT12080JVFR 30,000 100 0 100 200 300 400 500 600 Qg, TOTAL


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PDF APT12080JVFR OT-227 E145592 Midcom APT12080JVFR
catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APT40M35JVFR APTLM50H10FRT APT5SC120K 24 volt output smps design APT50M50JVR induction furnace using igbt
Text: APT12067JFLL APT12057JFLL APT12040JFLL APT12031JFLL 1100 0.580 0.440 0.260 18 22 30 - , APT1204R7BFLL APT1201R4BFLL APT1201R2BFLL 1100 1.200 1.000 10 13 - APT1101R2BFLL , 0.670 0.570 18 22 - APT12067B2FLL APT12057B2FLL 1100 0.580 0.440 20 26 , APT10086BVR APT1201R6BVFR APT1201R5BVFR APT1001RBVFR APT10086BVFR 0.750 0.650 0.560 12 13 16 , APT10M25BVFR APT10M19BVFR 1200 0.800 0.600 16 20 - APT12080B2VFR APT12060B2VFR 1000


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PDF
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: switching, reduced gate drive power ID 4.700 3.5 APT1204R7KFLLG TO-220 4.700 3.5 APT1204R7BFLLG TO-247 or D3 1.400 1200 RDS(ON) Max 9 APT1201R4BFLLG TO-247 MOSFET Part # FREDFET Part # Package Style 0.670 18 APT12067B2LLG T-MAX® 0.670 17 APT12067JLL ISOTOP® 0.570 22 APT12057B2LLG T-MAX® 0.570 19 APT12057JLL ISOTOP® 0.900


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
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